Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 48A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque4.384 |
|
MOSFET (Metal Oxide) | 60V | 48A (Tc) | 10V | 4V @ 250µA | 60nC @ 10V | 1360pF @ 25V | ±20V | - | 110W (Tc) | 23 mOhm @ 29A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 900V 10A TO247
|
pacote: TO-247-3 |
Estoque3.040 |
|
MOSFET (Metal Oxide) | 900V | 10A (Tc) | 10V | 4.5V @ 250µA | 75nC @ 10V | 3160pF @ 25V | ±30V | - | 403W (Tc) | 980 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 600V 1.4A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque5.872 |
|
MOSFET (Metal Oxide) | 600V | 1.4A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 229pF @ 25V | ±30V | - | 36W (Tc) | 7 Ohm @ 840mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 2.9A TSM
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque5.088 |
|
MOSFET (Metal Oxide) | 30V | 2.9A (Ta) | 4V, 10V | 2.6V @ 1mA | 3.3nC @ 4V | 180pF @ 10V | ±20V | - | 700mW (Ta) | 83 mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET P-CH 200V 0.12A TO92-3
|
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Estoque144.000 |
|
MOSFET (Metal Oxide) | 200V | 120mA (Ta) | 10V | 3.5V @ 1mA | - | 100pF @ 25V | ±20V | - | 700mW (Ta) | 25 Ohm @ 150mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 55V 100A TO-220AB
|
pacote: TO-220-3 |
Estoque24.288 |
|
MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 4000pF @ 25V | ±20V | - | 175W (Tc) | 8 mOhm @ 59A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 100V 9.2A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque84.012 |
|
MOSFET (Metal Oxide) | 100V | 9.2A (Tc) | 4V, 5V | 2V @ 250µA | 12nC @ 5V | 490pF @ 25V | ±10V | - | 3.7W (Ta), 60W (Tc) | 270 mOhm @ 5.5A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
TRENCH 6 60V FET
|
pacote: - |
Estoque6.624 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET BVDSS: 41V 60V POWERDI333
|
pacote: 8-PowerWDFN |
Estoque6.880 |
|
MOSFET (Metal Oxide) | 60V | 4.8A (Ta) | 4.5V, 10V | 3V @ 250µA | 24nC @ 10V | 1293pF @ 30V | ±20V | - | 1.1W (Ta) | 50 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, PLANA
|
pacote: TO-261-4, TO-261AA |
Estoque7.024 |
|
MOSFET (Metal Oxide) | 600V | 600mA (Tc) | 10V | 4V @ 250µA | 13nC @ 10V | 435pF @ 25V | ±30V | - | 2.5W (Tc) | 5 Ohm @ 600mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 900V 9A TO-3P
|
pacote: TO-3P-3, SC-65-3 |
Estoque4.704 |
|
MOSFET (Metal Oxide) | 900V | 9A (Tc) | 10V | 5V @ 250µA | 58nC @ 10V | 2730pF @ 25V | ±30V | - | 280W (Tc) | 1.4 Ohm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
||
Texas Instruments |
MOSFET P-CH 15V 1.6A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque6.864 |
|
MOSFET (Metal Oxide) | 15V | 1.6A (Ta) | 2.7V, 10V | 1.5V @ 250µA | 5.45nC @ 10V | - | +2V, -15V | - | 791mW (Ta) | 180 mOhm @ 1.5A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 30V 5.8A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque450.324 |
|
MOSFET (Metal Oxide) | 30V | 5.8A (Ta) | 4.5V, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | ±20V | Schottky Diode (Isolated) | 2W (Ta) | 35 mOhm @ 4.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET P-CH 30V 40A TSDSON-8
|
pacote: 8-PowerTDFN |
Estoque52.266 |
|
MOSFET (Metal Oxide) | 30V | 13.5A (Ta), 40A (Tc) | 6V, 10V | 3.1V @ 105µA | 57.5nC @ 10V | 4785pF @ 15V | ±25V | - | 2.1W (Ta), 69W (Tc) | 8.6 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
||
Texas Instruments |
MOSFET P-CH 20V 2.5A 3PICOSTAR
|
pacote: 3-XFDFN |
Estoque60.510 |
|
MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 1.8V, 4.5V | 1.2V @ 250µA | 0.91nC @ 4.5V | 189pF @ 10V | -12V | - | 500mW (Ta) | 88 mOhm @ 500mA, 8V | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
||
onsemi |
SICFET N-CH 1200V 8.6A/98A D2PAK
|
pacote: - |
Estoque2.238 |
|
SiCFET (Silicon Carbide) | 1200 V | 8.6A (Ta), 98A (Tc) | 20V | 4.3V @ 20mA | 220 nC @ 20 V | 2943 pF @ 800 V | +25V, -15V | - | 3.7W (Ta), 468W (Tc) | 28mOhm @ 60A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
Vishay General Semiconductor - Diodes Division |
MOSFET N-CH 150V 400A SOT227
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 400A (Tc) | 10V | 5.4V @ 1mA | 250 nC @ 10 V | 13700 pF @ 25 V | ±20V | - | 909W (Tc) | 2.75mOhm @ 200A, 10V | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
||
STMicroelectronics |
N-CHANNEL 600 V, 38 MOHM TYP., 5
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 56A (Tc) | 10V | 4.5V @ 250µA | 78.6 nC @ 10 V | 4675 pF @ 400 V | ±30V | - | 245W (Tc) | 43mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 4.5A 8SO
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 4.5A (Ta) | - | 5.5V @ 250µA | 50 nC @ 10 V | 930 pF @ 25 V | - | - | - | 60mOhm @ 2.7A, 10V | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V POWERDI3333
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 24A (Ta), 27A (Tc) | 2.5V, 4.5V | 1.3V @ 250µA | 99 nC @ 10 V | 3926 pF @ 10 V | ±12V | - | 600mW (Ta) | 2mOhm @ 13.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |
||
Fairchild Semiconductor |
MOSFET N-CH 30V 17A/94A TO252AA
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 17A (Ta), 94A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 60 nC @ 10 V | 2525 pF @ 15 V | ±20V | - | 80W (Tc) | 5.7mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
GAN HV
|
pacote: - |
Request a Quote |
|
GaNFET (Gallium Nitride) | 400 V | 31A (Tc) | - | 1.6V @ 2.6mA | - | 382 pF @ 320 V | -10V | - | 125W (Tc) | - | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-3 | 8-PowerSFN |
||
Renesas Electronics Corporation |
MP-3ZK
|
pacote: - |
Estoque23.982 |
|
MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 4V, 10V | 2.5V @ 1mA | 15 nC @ 10 V | 720 pF @ 10 V | ±20V | - | 1W (Ta), 23W (Tc) | 130mOhm @ 6A, 10V | 150°C | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET_(20V 40V)
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | - | 10V | - | 40 nC @ 10 V | - | - | - | - | - | -55°C ~ 175°C | Surface Mount | PG-TDSON-8-33 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 700V 4.5A SOT223
|
pacote: - |
Estoque2.433 |
|
MOSFET (Metal Oxide) | 700 V | 4.5A (Tc) | 10V | 3.5V @ 40µA | 4.8 nC @ 10 V | 174 pF @ 400 V | ±16V | - | 6.3W (Tc) | 1.2Ohm @ 900mA, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-4, TO-261AA |
||
Renesas Electronics Corporation |
SMALL SIGNAL N-CHANNEL MOSFET
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Comchip Technology |
MOSFET P-CH 60V 5A/16A DFN5X6
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 5A (Ta), 16A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 22 nC @ 10 V | 1256 pF @ 30 V | ±20V | - | 2W (Ta), 25W (Tc) | 48mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5x6 (PR-PAK) | 8-PowerTDFN |
||
Renesas Electronics Corporation |
N-CHANNEL , 150V, 30A
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |