Página 1035 - Transistores - FET, MOSFET - Simples | Produtos semicondutores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Simples

Registros 42.029
Página  1.035/1.502
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPP16CN10LGXKSA1
Infineon Technologies

MOSFET N-CH 100V 54A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 61µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4190pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 15.7 mOhm @ 54A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque6.080
MOSFET (Metal Oxide)
100V
54A (Tc)
10V
2.4V @ 61µA
44nC @ 10V
4190pF @ 50V
±20V
-
100W (Tc)
15.7 mOhm @ 54A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
IRLZ24NLPBF
Infineon Technologies

MOSFET N-CH 55V 18A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA
Estoque2.720
MOSFET (Metal Oxide)
55V
18A (Tc)
4V, 10V
2V @ 250µA
15nC @ 5V
480pF @ 25V
±16V
-
3.8W (Ta), 45W (Tc)
60 mOhm @ 11A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
AO4449L
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 7A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque4.656
MOSFET (Metal Oxide)
30V
7A (Ta)
4.5V, 10V
2.4V @ 250µA
16nC @ 10V
910pF @ 15V
±20V
-
3.1W (Ta)
34 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
AOD492
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 85A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4512pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque6.336
MOSFET (Metal Oxide)
30V
85A (Tc)
4.5V, 10V
2.2V @ 250µA
74nC @ 10V
4512pF @ 15V
±20V
Schottky Diode (Body)
2.5W (Ta), 100W (Tc)
4.4 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IXTY64N055T
IXYS

MOSFET N-CH 55V 64A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque631.824
MOSFET (Metal Oxide)
55V
64A (Tc)
10V
4V @ 25µA
37nC @ 10V
1420pF @ 25V
±20V
-
130W (Tc)
13 mOhm @ 500mA, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
hot STP4NK50Z
STMicroelectronics

MOSFET N-CH 500V 3A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque17.340
MOSFET (Metal Oxide)
500V
3A (Tc)
10V
4.5V @ 50µA
12nC @ 10V
310pF @ 25V
±30V
-
45W (Tc)
2.7 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPB80P04P405ATMA1
Infineon Technologies

MOSFET P-CH TO263-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque4.672
MOSFET (Metal Oxide)
40V
80A (Tc)
10V
4V @ 250µA
151nC @ 10V
10300pF @ 25V
±20V
-
125W (Tc)
4.9 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLR3717TRRPBF
Infineon Technologies

MOSFET N-CH 20V 120A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque7.760
MOSFET (Metal Oxide)
20V
120A (Tc)
4.5V, 10V
2.45V @ 250µA
31nC @ 4.5V
2830pF @ 10V
±20V
-
89W (Tc)
4 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
IXFH23N60Q
IXYS

MOSFET N-CH 600V 23A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 320 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque6.912
MOSFET (Metal Oxide)
600V
23A (Tc)
10V
4.5V @ 4mA
90nC @ 10V
3300pF @ 25V
±30V
-
400W (Tc)
320 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
hot HAT2165H-EL-E
Renesas Electronics America

MOSFET N-CH 30V 55A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5180pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 27.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
pacote: SC-100, SOT-669
Estoque274.104
MOSFET (Metal Oxide)
30V
55A (Ta)
4.5V, 10V
2.5V @ 1mA
33nC @ 4.5V
5180pF @ 10V
±20V
-
30W (Tc)
3.3 mOhm @ 27.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
DMP25H18DLFDE-13
Diodes Incorporated

MOSFET P-CH 250V 0.26A DFN2020-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 25V
  • Vgs (Max): ±40V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type E)
  • Package / Case: 6-UDFN Exposed Pad
pacote: 6-UDFN Exposed Pad
Estoque5.824
MOSFET (Metal Oxide)
250V
260mA (Ta)
3.5V, 10V
2.5V @ 1mA
2.8nC @ 10V
81pF @ 25V
±40V
-
600mW (Ta)
14 Ohm @ 200mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type E)
6-UDFN Exposed Pad
SSM3K361R,LF
Toshiba Semiconductor and Storage

SMALL-SIGNAL NCH MOSFET SOT23F Q

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 69 mOhm @ 2A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
pacote: SOT-23-3 Flat Leads
Estoque6.304
MOSFET (Metal Oxide)
100V
3.5A (Ta)
4.5V, 10V
2.5V @ 100µA
3.2nC @ 4.5V
430pF @ 15V
±20V
-
1.2W (Ta)
69 mOhm @ 2A, 10V
175°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
IXFP20N50P3M
IXYS

MOSFET N-CH 500V 8A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 58W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque4.896
MOSFET (Metal Oxide)
500V
8A (Tc)
10V
5V @ 1.5mA
36nC @ 10V
1800pF @ 25V
±30V
-
58W (Tc)
300 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot IRL640PBF
Vishay Siliconix

MOSFET N-CH 200V 17A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque5.984
MOSFET (Metal Oxide)
200V
17A (Tc)
4V, 5V
2V @ 250µA
66nC @ 5V
1800pF @ 25V
±10V
-
125W (Tc)
180 mOhm @ 10A, 5V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRLHS6342TRPBF
Infineon Technologies

MOSFET N-CH 30V 8.7A PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1019pF @ 25V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 8.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-PQFN (2x2)
  • Package / Case: 6-PowerVDFN
pacote: 6-PowerVDFN
Estoque74.274
MOSFET (Metal Oxide)
30V
8.7A (Ta), 19A (Tc)
2.5V, 4.5V
1.1V @ 10µA
11nC @ 4.5V
1019pF @ 25V
±12V
-
2.1W (Ta)
15.5 mOhm @ 8.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-PQFN (2x2)
6-PowerVDFN
SIS407ADN-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 18A 1212-8 PPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 168nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 5875pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 39.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
pacote: PowerPAK? 1212-8
Estoque163.074
MOSFET (Metal Oxide)
20V
18A (Tc)
1.8V, 4.5V
1V @ 250µA
168nC @ 8V
5875pF @ 10V
±8V
-
3.7W (Ta), 39.1W (Tc)
9 mOhm @ 15A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
hot ZXMN6A08GTA
Diodes Incorporated

MOSFET N-CH 60V 3.8A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 459pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacote: TO-261-4, TO-261AA
Estoque1.068.936
MOSFET (Metal Oxide)
60V
3.8A (Ta)
4.5V, 10V
1V @ 250µA
5.8nC @ 10V
459pF @ 40V
±20V
-
2W (Ta)
80 mOhm @ 4.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
GT100N04K
Goford Semiconductor

N40V,50A,RD<10M@10V,VTH1.2V~2.2V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
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MOSFET (Metal Oxide)
40 V
50A (Tc)
4.5V, 10V
2.2V @ 250µA
32 nC @ 10 V
644 pF @ 20 V
±20V
-
80W (Tc)
10mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
SSFD20N24
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 24.00A, 20

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque13.389
MOSFET (Metal Oxide)
200 V
24A (Tc)
10V
2.5V @ 250µA
60 nC @ 10 V
4200 pF @ 25 V
±20V
-
150W (Tc)
80mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
AO3402L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 4A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.34 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: 3-SMD, SOT-23-3 Variant
pacote: -
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MOSFET (Metal Oxide)
30 V
4A (Ta)
2.5V, 10V
1.4V @ 250µA
4.34 nC @ 4.5 V
390 pF @ 15 V
±12V
-
1.4W (Ta)
55mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
3-SMD, SOT-23-3 Variant
SIR624DP-T1-RE3
Vishay Siliconix

MOSFET N-CH 200V 5.7A/18.6A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
pacote: -
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MOSFET (Metal Oxide)
200 V
5.7A (Ta), 18.6A (Tc)
7.5V, 10V
4V @ 250µA
30 nC @ 10 V
1110 pF @ 100 V
±20V
-
5W (Ta), 52W (Tc)
60mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
XPQ1R004PB-LXHQ
Toshiba Semiconductor and Storage

40V U-MOS IX-H L-TOGL 1.0MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: L-TOGL™
  • Package / Case: 8-PowerBSFN
pacote: -
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MOSFET (Metal Oxide)
40 V
200A (Ta)
6V, 10V
3V @ 500µA
84 nC @ 10 V
6890 pF @ 10 V
±20V
-
230W (Tc)
1mOhm @ 100A, 10V
175°C
Surface Mount
L-TOGL™
8-PowerBSFN
AONS36346
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 26.5A/60A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.2W (Ta), 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
pacote: -
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MOSFET (Metal Oxide)
30 V
26.5A (Ta), 60A (Tc)
4.5V, 10V
2.1V @ 250µA
20 nC @ 10 V
800 pF @ 15 V
±20V
-
6.2W (Ta), 31W (Tc)
5.5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
IPB60R190C6ATMA1
Infineon Technologies

MOSFET N-CH 600V 20.2A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 630µA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 151W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacote: -
Estoque2.280
MOSFET (Metal Oxide)
600 V
20.2A (Tc)
10V
3.5V @ 630µA
63 nC @ 10 V
1400 pF @ 100 V
±20V
-
151W (Tc)
190mOhm @ 9.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPP040N06NXKSA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacote: -
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MOSFET (Metal Oxide)
60 V
80A (Tc)
6V, 10V
3.3V @ 50µA
44 nC @ 10 V
3375 pF @ 30 V
±20V
-
3W (Ta), 107W (Tc)
4mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
FBG10N30BSH
EPC Space, LLC

GAN FET HEMT 100V 30A 4FSMD-B

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-SMD
  • Package / Case: 4-SMD, No Lead
pacote: -
Estoque120
GaNFET (Gallium Nitride)
100 V
30A (Tc)
5V
2.5V @ 5mA
11 nC @ 5 V
1000 pF @ 50 V
+6V, -4V
-
-
12mOhm @ 30A, 5V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD
4-SMD, No Lead
EPC2031
EPC

GANFET NCH 60V 31A DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 15mA
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacote: -
Estoque43.305
GaNFET (Gallium Nitride)
60 V
31A (Ta)
-
2.5V @ 15mA
17 nC @ 5 V
1800 pF @ 300 V
-
-
-
2.6mOhm @ 30A, 5V
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2023
EPC

GANFET N-CH 30V 60A DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 1.3mOhm @ 40A, 5V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacote: -
Estoque23.049
GaNFET (Gallium Nitride)
30 V
60A (Ta)
-
2.5V @ 20mA
-
2300 pF @ 15 V
-
-
-
1.3mOhm @ 40A, 5V
-
Surface Mount
Die
Die