Página 28 - Transistores - FET, MOSFET - Arranjos | Produtos semicondutores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Arranjos

Registros 5.684
Página  28/203
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot 2N7002DW L6327
Infineon Technologies

MOSFET 2N-CH 60V 0.3A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 300mA
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
pacote: 6-VSSOP, SC-88, SOT-363
Estoque72.000
Logic Level Gate
60V
300mA
3 Ohm @ 500mA, 10V
2.5V @ 250µA
0.6nC @ 10V
20pF @ 25V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
IRF7751TR
Infineon Technologies

MOSFET 2P-CH 30V 4.5A 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacote: 8-TSSOP (0.173", 4.40mm Width)
Estoque2.512
Logic Level Gate
30V
4.5A
35 mOhm @ 4.5A, 10V
2.5V @ 250µA
44nC @ 10V
1464pF @ 25V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot IRF5850
Infineon Technologies

MOSFET 2P-CH 20V 2.2A 6TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
  • Power - Max: 960mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
pacote: SOT-23-6 Thin, TSOT-23-6
Estoque31.200
Logic Level Gate
20V
2.2A
135 mOhm @ 2.2A, 4.5V
1.2V @ 250µA
5.4nC @ 4.5V
320pF @ 15V
960mW
-
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
ECH8601M-P-TL-H
ON Semiconductor

MOSFET 2N-CH ECH8

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque6.880
-
-
-
-
-
-
-
-
-
-
-
-
AO4822AL
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque5.024
Logic Level Gate
30V
8A
19 mOhm @ 8A, 10V
2.4V @ 250µA
18nC @ 10V
888pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SP8M6FU6TB
Rohm Semiconductor

MOSFET N/P-CH 30V 5A/3.5A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A, 3.5A
  • Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque7.792
Logic Level Gate
30V
5A, 3.5A
51 mOhm @ 5A, 10V
2.5V @ 1mA
3.9nC @ 5V
230pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot SI5904DC-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 3.1A 1206-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
pacote: 8-SMD, Flat Lead
Estoque79.236
Logic Level Gate
20V
3.1A
75 mOhm @ 3.1A, 4.5V
1.5V @ 250µA
6nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
hot FDW2508PB
Fairchild/ON Semiconductor

MOSFET 2P-CH 12V 6A 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3775pF @ 6V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacote: 8-TSSOP (0.173", 4.40mm Width)
Estoque33.924
Logic Level Gate
12V
6A
18 mOhm @ 6A, 4.5V
1.5V @ 250µA
45nC @ 4.5V
3775pF @ 6V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
PMWD30UN,518
NXP

MOSFET 2N-CH 30V 5A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V
  • Power - Max: 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacote: 8-TSSOP (0.173", 4.40mm Width)
Estoque6.192
Logic Level Gate
30V
5A
33 mOhm @ 3.5A, 4.5V
700mV @ 1mA
28nC @ 5V
1478pF @ 10V
2.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
ALD212900SAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8SOIC

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 80mA
  • Rds On (Max) @ Id, Vgs: 14 Ohm
  • Vgs(th) (Max) @ Id: 20mV @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque4.240
Logic Level Gate
10.6V
80mA
14 Ohm
20mV @ 20µA
-
30pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot AON6908A
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 11.5A/17A 8DFN

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A, 17A
  • Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 11.5A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V
  • Power - Max: 1.9W, 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-DFN (5x6)
pacote: 8-PowerVDFN
Estoque13.884
Logic Level Gate
30V
11.5A, 17A
8.9 mOhm @ 11.5A, 10V
2.4V @ 250µA
15nC @ 10V
1110pF @ 15V
1.9W, 2.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-DFN (5x6)
NVMFD5877NLWFT1G
ON Semiconductor

MOSFET 2N-CH 60V 6A SO8FL

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
  • Power - Max: 3.2W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
pacote: 8-PowerTDFN
Estoque3.520
Logic Level Gate
60V
6A
39 mOhm @ 7.5A, 10V
3V @ 250µA
20nC @ 10V
540pF @ 25V
3.2W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
hot DMG6898LSD-13
Diodes Incorporated

MOSFET 2N-CH 20V 9.5A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
  • Power - Max: 1.28W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque147.420
Logic Level Gate
20V
9.5A
16 mOhm @ 9.4A, 4.5V
1.5V @ 250µA
26nC @ 10V
1149pF @ 10V
1.28W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot AO4622
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 20V 7.3A/5A 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.3A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque127.200
Logic Level Gate
20V
-
23 mOhm @ 7.3A, 10V
2V @ 250µA
18nC @ 10V
1100pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot SI8902EDB-T2-E1
Vishay Siliconix

MOSFET 2N-CH 20V 3.9A 6-MFP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1V @ 980µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-MICRO FOOT?CSP
  • Supplier Device Package: 6-Micro Foot?
pacote: 6-MICRO FOOT?CSP
Estoque826.728
Logic Level Gate
20V
3.9A
-
1V @ 980µA
-
-
1W
-55°C ~ 150°C (TJ)
Surface Mount
6-MICRO FOOT?CSP
6-Micro Foot?
SIZ256DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 70V 11.5A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 70V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 31.8A (Tc)
  • Rds On (Max) @ Id, Vgs: 17.6mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 35V
  • Power - Max: 4.3W (Ta), 33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (3.3x3.3)
pacote: -
Estoque9.000
-
70V
11.5A (Ta), 31.8A (Tc)
17.6mOhm @ 7A, 4.5V
1.5V @ 250µA
27nC @ 10V
1060pF @ 35V
4.3W (Ta), 33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair® (3.3x3.3)
DMC2057UVT-7
Diodes Incorporated

MOSFET N/P-CH 20V 4A/3.3A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.3A (Ta)
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 416pF @ 10V, 536pF @ 10V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
pacote: -
Request a Quote
-
20V
4A (Ta), 3.3A (Ta)
42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V
1.2V @ 250µA, 1V @ 250µA
10.5nC @ 10V, 6.5nC @ 4.5V
416pF @ 10V, 536pF @ 10V
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
DI018C03PT
Diotec Semiconductor

IC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc), 18A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V, 30.1mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V, 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1122pF @ 15V, 1150pF @ 20V
  • Power - Max: 10.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-QFN (3x3)
pacote: -
Request a Quote
-
30V
27A (Tc), 18A (Tc)
9.3mOhm @ 15A, 10V, 30.1mOhm @ 10A, 10V
2.5V @ 250µA
12nC @ 4.5V, 20nC @ 10V
1122pF @ 15V, 1150pF @ 20V
10.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-QFN (3x3)
PMCM650CVNEZ
Nexperia USA Inc.

PMCM650CVNE/NAX000/NONE

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
FDMS7696A
Fairchild Semiconductor

MOSFET N-CH 30V 13.2A

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
SIX3439K-TP
Micro Commercial Co

MOSFET N/P-CH 20V 0.75A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 750mA, 660mA
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V, 170pF @ 16V
  • Power - Max: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacote: -
Estoque321.789
Logic Level Gate
20V
750mA, 660mA
380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V
1V @ 250µA, 1.1V @ 250µA
-
120pF @ 16V, 170pF @ 16V
-
150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
SIX3139KA-TP
Micro Commercial Co

MOSFET 2P-CH 20V 0.6A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 600mA
  • Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.86nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 16V
  • Power - Max: 150mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacote: -
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Logic Level Gate
20V
600mA
850mOhm @ 500mA, 4.5V
1.1V @ 250µA
0.86nC @ 4.5V
40pF @ 16V
150mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
TSM6963SDCA
Taiwan Semiconductor Corporation

MOSFET 2P-CH 20V 4.5A 8TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
  • Power - Max: 1.14W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacote: -
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-
20V
4.5A (Ta)
30mOhm @ 4.5A, 4.5V
1V @ 250µA
20nC @ 4.5V
1500pF @ 10V
1.14W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
KFC4B21320L
Nuvoton Technology Corporation

MOSFET 12V 2.5A 4CSP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 1.25A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 70µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 10V
  • Power - Max: 340mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFLGA, CSP
  • Supplier Device Package: 4-CSP (0.8x0.8)
pacote: -
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-
12V
2.5A (Ta)
48mOhm @ 1.25A, 4.5V
1.4V @ 70µA
3.5nC @ 4V
205pF @ 10V
340mW (Ta)
150°C
Surface Mount
4-XFLGA, CSP
4-CSP (0.8x0.8)
DMP4011SPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MSCSM120TLM11CAG
Microchip Technology

SIC 4N-CH 1200V 251A SP6C

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
  • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
  • Power - Max: 1042W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C
pacote: -
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-
1200V (1.2kV)
251A (Tc)
10.4mOhm @ 120A, 20V
2.8V @ 3mA
696nC @ 20V
9000pF @ 1000V
1042W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6C
ITD50N04S4L07ATMA1
Infineon Technologies

MOSFET_(20V 40V)

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 18µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
  • Power - Max: 46W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD
  • Supplier Device Package: PG-TO252-5-311
pacote: -
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Logic Level Gate
40V
50A (Tc)
7.2mOhm @ 50A, 10V
2.2V @ 18µA
33nC @ 10V
2480pF @ 25V
46W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-5, DPAK (4 Leads + Tab), TO-252AD
PG-TO252-5-311
AOCA72104E
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 12V 30A 10DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 3.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-SMD, No Lead
  • Supplier Device Package: 10-AlphaDFN (2.98x1.49)
pacote: -
Request a Quote
-
12V
30A (Ta)
2.6mOhm @ 5A, 4.5V
1.3V @ 250µA
45nC @ 4.5V
-
3.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
10-SMD, No Lead
10-AlphaDFN (2.98x1.49)