Página 26 - Transistores - FET, MOSFET - Arranjos | Produtos semicondutores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Arranjos

Registros 5.684
Página  26/203
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF9910PBF
Infineon Technologies

MOSFET 2N-CH 20V 10A/12A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A, 12A
  • Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque5.952
Logic Level Gate
20V
10A, 12A
13.4 mOhm @ 10A, 10V
2.55V @ 250µA
11nC @ 4.5V
900pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
AON6920_001
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 5X6DFN

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A, 26.5A
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V
  • Power - Max: 2W, 2.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-DFN (5x6)
pacote: 8-PowerWDFN
Estoque3.600
Standard
30V
15A, 26.5A
5.2 mOhm @ 20A, 10V
2.3V @ 250µA
21nC @ 10V
1560pF @ 15V
2W, 2.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-DFN (5x6)
hot 2N7335
Microsemi Corporation

MOSFET 4P-CH 100V 0.75A MO-036AB

  • FET Type: 4 P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 750mA
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: MO-036AB
pacote: 14-DIP (0.300", 7.62mm)
Estoque6.504
Standard
100V
750mA
1.4 Ohm @ 500mA, 10V
4V @ 250µA
-
-
1.4W
-55°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
MO-036AB
hot SIA911EDJ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 101 mOhm @ 2.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 7.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
pacote: PowerPAK? SC-70-6 Dual
Estoque24.000
Logic Level Gate
20V
4.5A
101 mOhm @ 2.7A, 4.5V
1V @ 250µA
11nC @ 8V
-
7.8W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
FDW2507N
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 7.5A 8-TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 7.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacote: 8-TSSOP (0.173", 4.40mm Width)
Estoque3.088
Logic Level Gate
20V
7.5A
19 mOhm @ 7.5A, 4.5V
1.5V @ 250µA
28nC @ 4.5V
2152pF @ 10V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
APTM50DUM17G
Microsemi Corporation

MOSFET 2N-CH 500V 180A SP6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 180A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
pacote: SP6
Estoque6.032
Standard
500V
180A
20 mOhm @ 90A, 10V
5V @ 10mA
560nC @ 10V
28000pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
hot AO6810
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 3.5A 6TSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
pacote: SC-74, SOT-457
Estoque360.012
Logic Level Gate
30V
3.5A
50 mOhm @ 3.5A, 10V
2.5V @ 250µA
5nC @ 10V
210pF @ 15V
1.15W
-55°C ~ 150°C (TJ)
Surface Mount
SC-74, SOT-457
6-TSOP
hot SI5513CDC-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V 4A 1206-8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
pacote: 8-SMD, Flat Lead
Estoque21.960
Logic Level Gate
20V
4A, 3.7A
55 mOhm @ 4.3A, 4.5V
1.5V @ 250µA
4.2nC @ 5V
285pF @ 10V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
SQJ980AEP-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 75V SO8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 35V
  • Power - Max: 34W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
pacote: PowerPAK? SO-8 Dual
Estoque4.848
Standard
75V
17A (Tc)
50 mOhm @ 3.8A, 10V
2.5V @ 250µA
21nC @ 10V
790pF @ 35V
34W (Tc)
-55°C ~ 175°C (TA)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
DMN2013UFX-7
Diodes Incorporated

MOSFET 2N-CH 20V 10A 6-DFN

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 8.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57.4nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2607pF @ 10V
  • Power - Max: 780mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VFDFN Exposed Pad
  • Supplier Device Package: W-DFN5020-6
pacote: 6-VFDFN Exposed Pad
Estoque3.472
Logic Level Gate
20V
10A
11.5 mOhm @ 8.5A, 4.5V
1.1V @ 250µA
57.4nC @ 8V
2607pF @ 10V
780mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VFDFN Exposed Pad
W-DFN5020-6
hot UM6K34NTCN
Rohm Semiconductor

MOSFET 2N-CH 50V 0.2A UMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 0.9V Drive
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
  • Power - Max: 120mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
pacote: 6-TSSOP, SC-88, SOT-363
Estoque9.108
Logic Level Gate, 0.9V Drive
50V
200mA
2.2 Ohm @ 200mA, 4.5V
800mV @ 1mA
-
26pF @ 10V
120mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
hot BSO150N03MD G
Infineon Technologies

MOSFET 2N-CH 30V 8A 8DSO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.3A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque17.088
Logic Level Gate
30V
8A
15 mOhm @ 9.3A, 10V
2V @ 250µA
17nC @ 10V
1300pF @ 15V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
hot SI7220DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 60V 3.4A 1212-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
pacote: PowerPAK? 1212-8 Dual
Estoque282.372
Logic Level Gate
60V
3.4A
60 mOhm @ 4.8A, 10V
3V @ 250µA
20nC @ 10V
-
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
hot FDG6322C
Fairchild/ON Semiconductor

MOSFET N/P-CH 25V SC70-6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 220mA, 410mA
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
pacote: 6-TSSOP, SC-88, SOT-363
Estoque770.712
Logic Level Gate
25V
220mA, 410mA
4 Ohm @ 220mA, 4.5V
1.5V @ 250µA
0.4nC @ 4.5V
9.5pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
MCQ4559A-TP
Micro Commercial Co

MOSFET N/P-CH 60V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.62nC @ 10V, 4.27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V, 505pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacote: -
Request a Quote
-
60V
4.5A, 3.5A
45mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V
2.5V @ 250µA
20.62nC @ 10V, 4.27nC @ 4.5V
850pF @ 25V, 505pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
KFC4B22690L
Nuvoton Technology Corporation

MOSFET 20V 3.4A 4CSP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 1.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 160µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 426pF @ 10V
  • Power - Max: 420mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFLGA, CSP
  • Supplier Device Package: 4-CSP (1.1x1.1)
pacote: -
Request a Quote
-
20V
3.4A (Ta)
32mOhm @ 1.7A, 4.5V
1.4V @ 160µA
4.5nC @ 4V
426pF @ 10V
420mW (Ta)
150°C
Surface Mount
4-XFLGA, CSP
4-CSP (1.1x1.1)
APTMC120HM17CT3AG
Microchip Technology

SIC 4N-CH 1200V 147A SP3

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 147A (Tc)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 100A, 20V
  • Vgs(th) (Max) @ Id: 4V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 332nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5576pF @ 1000V
  • Power - Max: 750W
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3
pacote: -
Request a Quote
-
1200V (1.2kV)
147A (Tc)
17mOhm @ 100A, 20V
4V @ 30mA
332nC @ 5V
5576pF @ 1000V
750W
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3
DMP3048LSD-13
Diodes Incorporated

MOSFET 2P-CH 30V 4.8A 8SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1438pF @ 15V
  • Power - Max: 1.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: -
Request a Quote
-
30V
4.8A (Ta)
48mOhm @ 5A, 10V
1.3V @ 250µA
13.5nC @ 4.5V
1438pF @ 15V
1.7W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
BUK7K6R8-40E-1X
Nexperia USA Inc.

MOSFET 40V 40A LFPAK56D

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1947pF @ 25V
  • Power - Max: 64W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
pacote: -
Request a Quote
-
40V
40A (Ta)
6.8mOhm @ 20A, 10V
4V @ 1mA
28.9nC @ 10V
1947pF @ 25V
64W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
AON7934_102
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 13A/16A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)
  • Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V, 807pF @ 15V
  • Power - Max: 2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-DFN-EP (3x3)
pacote: -
Request a Quote
-
30V
13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)
10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V
2.2V @ 250µA
11nC @ 10V, 17.5nC @ 10V
485pF @ 15V, 807pF @ 15V
2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-DFN-EP (3x3)
MCQ03N06-TP-HF
Micro Commercial Co

MOSFET

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 247pF @ 30V
  • Power - Max: 1.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacote: -
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-
60V
3A
105mOhm @ 3A, 10V
1.4V @ 250µA
6nC @ 4.5V
247pF @ 30V
1.7W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SIA923EDJ-T4-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.9W (Ta), 7.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SC-70-6 Dual
  • Supplier Device Package: PowerPAK® SC-70-6 Dual
pacote: -
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-
20V
4.5A (Ta), 4.5A (Tc)
54mOhm @ 3.8A, 4.5V
1.4V @ 250µA
25nC @ 8V
-
1.9W (Ta), 7.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6 Dual
PowerPAK® SC-70-6 Dual
XP3700M
YAGEO XSEMI

MOSFET N AND P-CH 30V 7.8A 5.5A

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 5.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC
  • Supplier Device Package: 8-SO
pacote: -
Estoque2.970
-
30V
7.8A (Ta), 5.5A (Ta)
20mOhm @ 7A, 10V
2.2V @ 250µA
8nC @ 4.5V
880pF @ 15V
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SO
IRF7555TR
Infineon Technologies

MOSFET 2P-CH 20V 4.3A MICRO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: Micro8™
pacote: -
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Logic Level Gate
20V
4.3A
55mOhm @ 4.3A, 4.5V
1.2V @ 250µA
15nC @ 5V
1066pF @ 10V
1.25W
-
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Micro8™
IRF7303TRPBFXTMA1
Infineon Technologies

MOSFET 2N-CH 30V 4.9A 8DSO-902

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8-902
pacote: -
Estoque35.955
-
30V
4.9A (Ta)
50mOhm @ 2.4A, 10V
1V @ 250µA
25nC @ 10V
520pF @ 25V
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8-902
PJS6834_S2_00001
Panjit International Inc.

MOSFET 2N-CH 20V 0.75A SOT23-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
pacote: -
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-
20V
750mA (Ta)
400mOhm @ 600mA, 4.5V
900mV @ 250µA
1.4nC @ 4.5V
67pF @ 10V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
EFC2J013NUZTDG
onsemi

MOSFET 2N-CH 6WLCSP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.8W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: 6-WLCSP (2x1.49)
pacote: -
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-
-
-
-
1.3V @ 1mA
37nC @ 4.5V
-
1.8W (Ta)
150°C (TJ)
Surface Mount
6-SMD, No Lead
6-WLCSP (2x1.49)
HAT2210RWS-E
Renesas Electronics Corporation

MOSFET 2N-CH 30V 7.5A/8A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Ta)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V, 1330pF @ 10V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacote: -
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Logic Level Gate, 4.5V Drive
30V
7.5A (Ta), 8A (Ta)
24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V
2.5V @ 1mA
4.6nC @ 4.5V, 11nC @ 4.5V
630pF @ 10V, 1330pF @ 10V
1.5W (Ta)
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP