Página 21 - Transistores - FET, MOSFET - Arranjos | Produtos semicondutores discretos

Nº de peças	Fabricante	Descrição	pacote	Estoque	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AO4803L	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 5A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 52 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque288.768	Standard	30V	5A	52 mOhm @ 5A, 10V	2.4V @ 250µA	11nC @ 10V	520pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AON7820	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 8DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2065pF @ 10V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Supplier Device Package: 8-DFN (3x3)	pacote: 8-PowerSMD, Flat Leads	Estoque7.360	Logic Level Gate	20V	-	-	1V @ 250µA	22nC @ 4.5V	2065pF @ 10V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerSMD, Flat Leads	8-DFN (3x3)
FMM150-0075P	IXYS	MOSFET 2N-CH 75V 150A I4-PAC-5 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 120A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	pacote: i4-Pac?-5	Estoque3.504	Standard	75V	150A	4.2 mOhm @ 120A, 10V	4V @ 1mA	225nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Through Hole	i4-Pac?-5	ISOPLUS i4-PAC?
AUIRF9952QTR	Infineon Technologies	MOSFET N/P-CH 30V 3.5A/2.3A 8SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque4.240	Logic Level Gate	30V	3.5A, 2.3A	100 mOhm @ 2.2A, 10V	3V @ 250µA	14nC @ 10V	190pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTM100A23STG	Microsemi Corporation	MOSFET 2N-CH 1000V 36A SP4 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 36A Rds On (Max) @ Id, Vgs: 270 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 308nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	pacote: SP4	Estoque7.088	Standard	1000V (1kV)	36A	270 mOhm @ 18A, 10V	5V @ 5mA	308nC @ 10V	8700pF @ 25V	694W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
SI4808DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 5.7A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.7A Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque396.420	Logic Level Gate	30V	5.7A	22 mOhm @ 7.5A, 10V	800mV @ 250µA (Min)	20nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NVMFD5485NLWFT3G	ON Semiconductor	MOSFET 2N-CH 60V 5.3A DFN8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 44 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Power - Max: 2.9W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	pacote: 8-PowerTDFN	Estoque6.288	Logic Level Gate	60V	5.3A	44 mOhm @ 15A, 10V	2.5V @ 250µA	20nC @ 10V	560pF @ 25V	2.9W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
DMHT6016LFJ-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V V-DFN5045- FET Type: 4 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-VDFN Exposed Pad Supplier Device Package: V-DFN5045-12	pacote: 12-VDFN Exposed Pad	Estoque5.744	Standard	-	14.8A (Ta)	22 mOhm @ 10A, 10V	3V @ 250µA	8.4nC @ 4.5V	864pF @ 30V	-	-55°C ~ 150°C (TJ)	Surface Mount	12-VDFN Exposed Pad	V-DFN5045-12
QS8J5TR	Rohm Semiconductor	MOSFET 2P-CH 30V 5A TSMT8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 39 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Power - Max: 600mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	pacote: 8-SMD, Flat Lead	Estoque7.600	Logic Level Gate	30V	5A	39 mOhm @ 5A, 10V	2.5V @ 1mA	19nC @ 10V	1100pF @ 10V	600mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
ECH8659-TL-W	ON Semiconductor	MOSFET 2N-CH 30V 7A ECH8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V Power - Max: 1.3W Operating Temperature: 150°C (TJ) Mounting Type: - Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/ECH8	pacote: 8-SMD, Flat Lead	Estoque6.656	Logic Level Gate, 4V Drive	30V	7A	24 mOhm @ 3.5A, 10V	2.6V @ 1mA	11.8nC @ 10V	710pF @ 10V	1.3W	150°C (TJ)	-	8-SMD, Flat Lead	SOT-28FL/ECH8
EMH2308-TL-H	ON Semiconductor	MOSFET 2P-CH 20V 3A EMH8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 85 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-EMH	pacote: 8-SMD, Flat Lead	Estoque3.328	Logic Level Gate, 1.8V Drive	20V	3A	85 mOhm @ 3A, 4.5V	-	4nC @ 4.5V	320pF @ 10V	1W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-EMH
PMDPB85UPE,115	Nexperia USA Inc.	MOSFET 2P-CH 20V 2.9A 6HUSON FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 103 mOhm @ 1.3A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 514pF @ 10V Power - Max: 515mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	pacote: 6-UDFN Exposed Pad	Estoque3.840	Logic Level Gate	20V	2.9A	103 mOhm @ 1.3A, 4.5V	950mV @ 250µA	8.1nC @ 4.5V	514pF @ 10V	515mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020-6
BUK7K6R8-40E,115	Nexperia USA Inc.	MOSFET 2N-CH 40V 40A LFPAK56D FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1947pF @ 25V Power - Max: 64W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	pacote: SOT-1205, 8-LFPAK56	Estoque6.208	Standard	40V	40A	6.8 mOhm @ 20A, 10V	4V @ 1mA	28.9nC @ 10V	1947pF @ 25V	64W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
ZXMC3F31DN8TA	Diodes Incorporated	MOSFET N/P-CH 30V 6.8A/4.9A 8SO FET Type: N and P-Channel FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.9A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque962.676	Logic Level Gate, 4.5V Drive	30V	6.8A, 4.9A	24 mOhm @ 7A, 10V	3V @ 250µA	12.9nC @ 10V	608pF @ 15V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
2N7002DWQ-7-F	Diodes Incorporated	MOSFET 2N-CH 60V 0.23A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 310mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacote: 6-TSSOP, SC-88, SOT-363	Estoque2.272	Standard	60V	230mA	7.5 Ohm @ 50mA, 5V	2V @ 250µA	-	50pF @ 25V	310mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
FDG6332C_F085	Fairchild/ON Semiconductor	MOSFET N/P-CH 20V SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA, 600mA Rds On (Max) @ Id, Vgs: 300 mOhm @ 700mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	pacote: 6-TSSOP, SC-88, SOT-363	Estoque85.932	Logic Level Gate	20V	700mA, 600mA	300 mOhm @ 700mA, 4.5V	1.5V @ 250µA	1.5nC @ 4.5V	113pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
DMP3085LSD-13	Diodes Incorporated	MOSFET 2P-CH 30V 3.9A 8SO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.9A Rds On (Max) @ Id, Vgs: 70 mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 563pF @ 25V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque144.060	Logic Level Gate	30V	3.9A	70 mOhm @ 5.3A, 10V	3V @ 250µA	11nC @ 10V	563pF @ 25V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BSC076N04NDATMA1	Infineon Technologies	MOSFET 2N-CH 40V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 20V Power - Max: 2.3W (Ta), 65W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	pacote: -	Estoque13.440	-	40V	20A (Tc)	7.6mOhm @ 17A, 10V	4V @ 30µA	38nC @ 10V	2950pF @ 20V	2.3W (Ta), 65W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
PSMN045-100HLX	Nexperia USA Inc.	MOSFET 2N-CH 100V 21A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V Power - Max: 53W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	pacote: -	Estoque4.470	Logic Level Gate	100V	21A (Ta)	42mOhm @ 5A, 10V	2.1V @ 1mA	18.5nC @ 5V	2152pF @ 25V	53W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
FF11MR12W1M1B70BPSA1	Infineon Technologies	SIC 2N-CH 1200V AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V Vgs(th) (Max) @ Id: 5.55V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	pacote: -	Request a Quote	-	1200V (1.2kV)	100A (Tj)	11.3mOhm @ 100A, 15V	5.55V @ 40mA	248nC @ 15V	7360pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1B
SP8K1FRATB	Rohm Semiconductor	MOSFET 2N-CH 30V 5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacote: -	Estoque7.401	-	30V	5A (Ta)	51mOhm @ 5A, 10V	2.5V @ 1mA	5.5nC @ 5V	230pF @ 10V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
AOCA32116E	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 6A 4ALPHADFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.7W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: 4-AlphaDFN (1.2x1.2)	pacote: -	Request a Quote	-	20V	6A (Ta)	36mOhm @ 3A, 4.5V	1.3V @ 250µA	5.5nC @ 4.5V	-	1.7W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, No Lead	4-AlphaDFN (1.2x1.2)
PMDT290UNEH	Nexperia USA Inc.	MOSFET 2N-CH 20V 0.8A SOT666 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V Power - Max: 330mW (Ta), 1.09W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	pacote: -	Estoque11.460	-	20V	800mA (Ta)	380mOhm @ 500mA, 4.5V	950mV @ 250µA	0.68nC @ 4.5V	83pF @ 10V	330mW (Ta), 1.09W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-666
SI1965DH-T1-BE3	Vishay Siliconix	MOSFET 2P-CH 12V 1.3A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V Power - Max: 740mW (Ta), 1.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	pacote: -	Request a Quote	-	12V	1.14A (Ta), 1.3A (Tc)	390mOhm @ 1A, 4.5V	1V @ 250µA	4.2nC @ 8V	120pF @ 6V	740mW (Ta), 1.25W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
AONX36320	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 22A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 22A (Tc), 60A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 4.25mOhm @ 20A, 10V, 820µOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 15V, 5550pF @ 15V Power - Max: 4.1W (Ta), 24W (Tc), 5W (Ta), 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN (5x6)	pacote: -	Request a Quote	-	30V	22A (Ta), 22A (Tc), 60A (Ta), 85A (Tc)	4.25mOhm @ 20A, 10V, 820µOhm @ 30A, 10V	2.1V @ 250µA, 1.9V @ 250µA	25nC @ 10V, 150nC @ 10V	1070pF @ 15V, 5550pF @ 15V	4.1W (Ta), 24W (Tc), 5W (Ta), 75W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-DFN (5x6)
NVMFD5C478NWFT1G	onsemi	MOSFET 2N-CH 40V 9.8A/27A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V Power - Max: 3.1W (Ta), 23W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	pacote: -	Request a Quote	-	40V	9.8A (Ta), 27A (Tc)	17mOhm @ 7.5A, 10V	3.5V @ 20µA	6.3nC @ 10V	325pF @ 25V	3.1W (Ta), 23W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
DMN31D5UDW-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT363 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 0.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V Power - Max: 330mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacote: -	Request a Quote	-	30V	430mA (Ta)	1.5Ohm @ 100mA, 4.5V	0.9V @ 250µA	0.3nC @ 4.5V	15.4pF @ 15V	330mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
RF1S15N06	Harris Corporation	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

AO4803L

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 5A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 52 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque288.768

Standard

30V

5A

52 mOhm @ 5A, 10V

2.4V @ 250µA

11nC @ 10V

520pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AON7820

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 8DFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2065pF @ 10V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (3x3)

pacote: 8-PowerSMD, Flat Leads

Estoque7.360

Logic Level Gate

20V

-

1V @ 250µA

22nC @ 4.5V

2065pF @ 10V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerSMD, Flat Leads

8-DFN (3x3)

FMM150-0075P

IXYS

MOSFET 2N-CH 75V 150A I4-PAC-5

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 120A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5
Supplier Device Package: ISOPLUS i4-PAC?

pacote: i4-Pac?-5

Estoque3.504

Standard

75V

150A

4.2 mOhm @ 120A, 10V

4V @ 1mA

225nC @ 10V

-

-55°C ~ 175°C (TJ)

Through Hole

i4-Pac?-5

ISOPLUS i4-PAC?

AUIRF9952QTR

Infineon Technologies

MOSFET N/P-CH 30V 3.5A/2.3A 8SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque4.240

Logic Level Gate

30V

3.5A, 2.3A

100 mOhm @ 2.2A, 10V

3V @ 250µA

14nC @ 10V

190pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTM100A23STG

Microsemi Corporation

MOSFET 2N-CH 1000V 36A SP4

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 36A
Rds On (Max) @ Id, Vgs: 270 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 308nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
Power - Max: 694W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

pacote: SP4

Estoque7.088

Standard

1000V (1kV)

36A

270 mOhm @ 18A, 10V

5V @ 5mA

308nC @ 10V

8700pF @ 25V

694W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

SI4808DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 5.7A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque396.420

Logic Level Gate

30V

5.7A

22 mOhm @ 7.5A, 10V

800mV @ 250µA (Min)

20nC @ 10V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NVMFD5485NLWFT3G

ON Semiconductor

MOSFET 2N-CH 60V 5.3A DFN8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 44 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
Power - Max: 2.9W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

pacote: 8-PowerTDFN

Estoque6.288

Logic Level Gate

60V

5.3A

44 mOhm @ 15A, 10V

2.5V @ 250µA

20nC @ 10V

560pF @ 25V

2.9W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

DMHT6016LFJ-13

Diodes Incorporated

MOSFET BVDSS: 41V 60V V-DFN5045-

FET Type: 4 N-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-VDFN Exposed Pad
Supplier Device Package: V-DFN5045-12

pacote: 12-VDFN Exposed Pad

Estoque5.744

Standard

-

14.8A (Ta)

22 mOhm @ 10A, 10V

3V @ 250µA

8.4nC @ 4.5V

864pF @ 30V

-

-55°C ~ 150°C (TJ)

Surface Mount

12-VDFN Exposed Pad

V-DFN5045-12

QS8J5TR

Rohm Semiconductor

MOSFET 2P-CH 30V 5A TSMT8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Power - Max: 600mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

pacote: 8-SMD, Flat Lead

Estoque7.600

Logic Level Gate

30V

5A

39 mOhm @ 5A, 10V

2.5V @ 1mA

19nC @ 10V

1100pF @ 10V

600mW

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

ECH8659-TL-W

ON Semiconductor

MOSFET 2N-CH 30V 7A ECH8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V
Power - Max: 1.3W
Operating Temperature: 150°C (TJ)
Mounting Type: -
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-28FL/ECH8

pacote: 8-SMD, Flat Lead

Estoque6.656

Logic Level Gate, 4V Drive

30V

7A

24 mOhm @ 3.5A, 10V

2.6V @ 1mA

11.8nC @ 10V

710pF @ 10V

1.3W

150°C (TJ)

-

8-SMD, Flat Lead

SOT-28FL/ECH8

EMH2308-TL-H

ON Semiconductor

MOSFET 2P-CH 20V 3A EMH8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-EMH

pacote: 8-SMD, Flat Lead

Estoque3.328

Logic Level Gate, 1.8V Drive

20V

3A

85 mOhm @ 3A, 4.5V

-

4nC @ 4.5V

320pF @ 10V

1W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-EMH

PMDPB85UPE,115

Nexperia USA Inc.

MOSFET 2P-CH 20V 2.9A 6HUSON

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 103 mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 514pF @ 10V
Power - Max: 515mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6

pacote: 6-UDFN Exposed Pad

Estoque3.840

Logic Level Gate

20V

2.9A

103 mOhm @ 1.3A, 4.5V

950mV @ 250µA

8.1nC @ 4.5V

514pF @ 10V

515mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

DFN2020-6

BUK7K6R8-40E,115

Nexperia USA Inc.

MOSFET 2N-CH 40V 40A LFPAK56D

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1947pF @ 25V
Power - Max: 64W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

pacote: SOT-1205, 8-LFPAK56

Estoque6.208

Standard

40V

40A

6.8 mOhm @ 20A, 10V

4V @ 1mA

28.9nC @ 10V

1947pF @ 25V

64W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

ZXMC3F31DN8TA

Diodes Incorporated

MOSFET N/P-CH 30V 6.8A/4.9A 8SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.9A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque962.676

Logic Level Gate, 4.5V Drive

30V

6.8A, 4.9A

24 mOhm @ 7A, 10V

3V @ 250µA

12.9nC @ 10V

608pF @ 15V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

2N7002DWQ-7-F

Diodes Incorporated

MOSFET 2N-CH 60V 0.23A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 310mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

pacote: 6-TSSOP, SC-88, SOT-363

Estoque2.272

Standard

60V

230mA

7.5 Ohm @ 50mA, 5V

2V @ 250µA

-

50pF @ 25V

310mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

FDG6332C_F085

Fairchild/ON Semiconductor

MOSFET N/P-CH 20V SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA, 600mA
Rds On (Max) @ Id, Vgs: 300 mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

pacote: 6-TSSOP, SC-88, SOT-363

Estoque85.932

Logic Level Gate

20V

700mA, 600mA

300 mOhm @ 700mA, 4.5V

1.5V @ 250µA

1.5nC @ 4.5V

113pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

DMP3085LSD-13

Diodes Incorporated

MOSFET 2P-CH 30V 3.9A 8SO

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.9A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 563pF @ 25V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque144.060

Logic Level Gate

30V

3.9A

70 mOhm @ 5.3A, 10V

3V @ 250µA

11nC @ 10V

563pF @ 25V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BSC076N04NDATMA1

Infineon Technologies

MOSFET 2N-CH 40V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 20V
Power - Max: 2.3W (Ta), 65W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

pacote: -

Estoque13.440

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40V

20A (Tc)

7.6mOhm @ 17A, 10V

4V @ 30µA

38nC @ 10V

2950pF @ 20V

2.3W (Ta), 65W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

PSMN045-100HLX

Nexperia USA Inc.

MOSFET 2N-CH 100V 21A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
Power - Max: 53W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

pacote: -

Estoque4.470

Logic Level Gate

100V

21A (Ta)

42mOhm @ 5A, 10V

2.1V @ 1mA

18.5nC @ 5V

2152pF @ 25V

53W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

FF11MR12W1M1B70BPSA1

Infineon Technologies

SIC 2N-CH 1200V AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B

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1200V (1.2kV)

100A (Tj)

11.3mOhm @ 100A, 15V

5.55V @ 40mA

248nC @ 15V

7360pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY1B

SP8K1FRATB

Rohm Semiconductor

MOSFET 2N-CH 30V 5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacote: -

Estoque7.401

-

30V

5A (Ta)

51mOhm @ 5A, 10V

2.5V @ 1mA

5.5nC @ 5V

230pF @ 10V

1.4W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

AOCA32116E

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 6A 4ALPHADFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.7W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: 4-AlphaDFN (1.2x1.2)

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20V

6A (Ta)

36mOhm @ 3A, 4.5V

1.3V @ 250µA

5.5nC @ 4.5V

-

1.7W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, No Lead

4-AlphaDFN (1.2x1.2)

PMDT290UNEH

Nexperia USA Inc.

MOSFET 2N-CH 20V 0.8A SOT666

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
Power - Max: 330mW (Ta), 1.09W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666

pacote: -

Estoque11.460

-

20V

800mA (Ta)

380mOhm @ 500mA, 4.5V

950mV @ 250µA

0.68nC @ 4.5V

83pF @ 10V

330mW (Ta), 1.09W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-666

SI1965DH-T1-BE3

Vishay Siliconix

MOSFET 2P-CH 12V 1.3A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Power - Max: 740mW (Ta), 1.25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

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12V

1.14A (Ta), 1.3A (Tc)

390mOhm @ 1A, 4.5V

1V @ 250µA

4.2nC @ 8V

120pF @ 6V

740mW (Ta), 1.25W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

AONX36320

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 22A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 22A (Tc), 60A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 20A, 10V, 820µOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 15V, 5550pF @ 15V
Power - Max: 4.1W (Ta), 24W (Tc), 5W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN (5x6)

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30V

22A (Ta), 22A (Tc), 60A (Ta), 85A (Tc)

4.25mOhm @ 20A, 10V, 820µOhm @ 30A, 10V

2.1V @ 250µA, 1.9V @ 250µA

25nC @ 10V, 150nC @ 10V

1070pF @ 15V, 5550pF @ 15V

4.1W (Ta), 24W (Tc), 5W (Ta), 75W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

8-DFN (5x6)

NVMFD5C478NWFT1G

onsemi

MOSFET 2N-CH 40V 9.8A/27A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V
Power - Max: 3.1W (Ta), 23W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

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40V

9.8A (Ta), 27A (Tc)

17mOhm @ 7.5A, 10V

3.5V @ 20µA

6.3nC @ 10V

325pF @ 25V

3.1W (Ta), 23W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

DMN31D5UDW-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT363 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 0.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V
Power - Max: 330mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

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30V

430mA (Ta)

1.5Ohm @ 100mA, 4.5V

0.9V @ 250µA

0.3nC @ 4.5V

15.4pF @ 15V

330mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

RF1S15N06

Harris Corporation

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

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