Página 26 - Transistores - Bipolares (BJT) - RF | Produtos semicondutores discretos | Heisener Electronics
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Transistores - Bipolares (BJT) - RF

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Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BGR405H6327XTSA1
Infineon Technologies

TRANS RF NPN 5V 12MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 400MHz ~ 1.8GHz
  • Gain: -
  • Power - Max: 50mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 12mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
pacote: SC-82A, SOT-343
Estoque4.384
5V
-
1dB ~ 1.6dB @ 400MHz ~ 1.8GHz
-
50mW
-
12mA
-65°C ~ 150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFS 380L6 E6327
Infineon Technologies

TRANSISTOR GP BJT NPN 6V TSLP-6

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 1.9dB @ 1.8GHz ~ 3GHz
  • Gain: 8dB ~ 12dB
  • Power - Max: 380mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: PG-TSLP-6
pacote: 6-XFDFN
Estoque4.528
9V
14GHz
1.3dB ~ 1.9dB @ 1.8GHz ~ 3GHz
8dB ~ 12dB
380mW
60 @ 40mA, 3V
80mA
150°C (TJ)
Surface Mount
6-XFDFN
PG-TSLP-6
BFR 360T E6327
Infineon Technologies

TRANSISTOR RF NPN 6V SC-75

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
  • Gain: 13.5dB
  • Power - Max: 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
pacote: SC-75, SOT-416
Estoque2.352
9V
14GHz
1dB @ 1.8GHz
13.5dB
210mW
60 @ 15mA, 3V
35mA
150°C (TJ)
Surface Mount
SC-75, SOT-416
PG-SC-75
BFP650
Infineon Technologies

TRANS NPN RF 4V 150MA SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 37GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
  • Gain: 10.5dB ~ 21.5dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
pacote: SC-82A, SOT-343
Estoque5.360
4.5V
37GHz
0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
10.5dB ~ 21.5dB
500mW
110 @ 80mA, 3V
150mA
-
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
2N2857UB
Microsemi Corporation

TRANS NPN 15V 0.04A

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
  • Gain: 21dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacote: 3-SMD, No Lead
Estoque3.936
15V
-
4.5dB @ 450MHz
21dB
200mW
30 @ 3mA, 1V
40mA
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
hot 2SC5015-T1-A
CEL

RF TRANSISTOR NPN SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 11dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
pacote: SC-82A, SOT-343
Estoque140.484
6V
12GHz
1.5dB @ 2GHz
11dB
150mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
MS2361
Microsemi Corporation

TRANS RF BIPO 87.5W 2.6A M115

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 87.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 2.6A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M115
  • Supplier Device Package: M115
pacote: M115
Estoque6.368
65V
1.025GHz ~ 1.15GHz
-
9dB
87.5W
-
2.6A
200°C (TJ)
Chassis Mount
M115
M115
hot NE68033-T1B-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 9dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacote: TO-236-3, SC-59, SOT-23-3
Estoque193.200
10V
10GHz
1.8dB @ 2GHz
9dB
200mW
50 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
MRF581AG
Microsemi Corporation

TRANS RF NPN 5GHZ 15V MACR0 X

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
  • Gain: 13dB ~ 15.5dB
  • Power - Max: 1.25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Macro-X
  • Supplier Device Package: Macro-X
pacote: Macro-X
Estoque5.744
15V
5GHz
3dB ~ 3.5dB @ 500MHz
13dB ~ 15.5dB
1.25W
90 @ 50mA, 5V
200mA
150°C (TJ)
Surface Mount
Macro-X
Macro-X
PZ1418B30U,114
Ampleon USA Inc.

TRANS SOT443A

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.6GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.4dB
  • Power - Max: 45W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 4A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Flange
  • Package / Case: SOT-443A
  • Supplier Device Package: CDFM2
pacote: SOT-443A
Estoque3.088
15V
1.6GHz
-
8.4dB
45W
-
4A
200°C (TJ)
Flange
SOT-443A
CDFM2
BLW96/01,112
Ampleon USA Inc.

TRANSISTOR HF/VHF NPN SOT121B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 235MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 340W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 7A, 5V
  • Current - Collector (Ic) (Max): 12A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-121B
  • Supplier Device Package: CRFM4
pacote: SOT-121B
Estoque4.176
55V
235MHz
-
-
340W
15 @ 7A, 5V
12A
200°C (TJ)
Surface Mount
SOT-121B
CRFM4
PN3563_D26Z
Fairchild/ON Semiconductor

TRANS RF NPN 15V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 14dB ~ 26dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Estoque5.648
15V
1.5GHz
-
14dB ~ 26dB
350mW
20 @ 8mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BF199_J35Z
Fairchild/ON Semiconductor

TRANS RF NPN 25V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 1.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 38 @ 7mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Estoque4.048
25V
1.1GHz
-
-
350mW
38 @ 7mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
NE68130-A
CEL

RF TRANSISTOR NPN SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacote: SC-70, SOT-323
Estoque4.256
10V
7GHz
1.4dB @ 1GHz
9dB
150mW
40 @ 7mA, 3V
65mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
SD1727
STMicroelectronics

TRANSISTOR NPN RF HF SSB M164

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 14dB
  • Power - Max: 233W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1.4A, 6V
  • Current - Collector (Ic) (Max): 10A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: M164
  • Supplier Device Package: M164
pacote: M164
Estoque7.504
55V
-
-
14dB
233W
18 @ 1.4A, 6V
10A
200°C (TJ)
Chassis, Stud Mount
M164
M164
BF240_D74Z
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 40V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 1.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Estoque3.648
40V
1.1GHz
-
-
350mW
65 @ 1mA, 10V
50mA
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot HFA3135IH96
Intersil

IC TRANS ARRAY PNP MATCH SOT23-6

  • Transistor Type: 2 PNP (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 5.2dB @ 900MHz
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 26mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
pacote: SOT-23-6
Estoque6.012
9V
7GHz
5.2dB @ 900MHz
-
-
15 @ 10mA, 2V
26mA
150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
BFP410H6327XTSA1
Infineon Technologies

TRANS RF NPN 25GHZ 4.5V SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
  • Gain: 21.5dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 13mA, 2V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
pacote: SC-82A, SOT-343
Estoque4.000
5V
25GHz
1.2dB @ 2GHz
21.5dB
150mW
60 @ 13mA, 2V
40mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
MDS70
Microsemi Corporation

TRANS RF BIPO 225W 5A 55CX1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz ~ 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10.3dB ~ 11.65dB
  • Power - Max: 225W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55CX
  • Supplier Device Package: 55CX
pacote: 55CX
Estoque4.480
65V
1.03GHz ~ 1.09GHz
-
10.3dB ~ 11.65dB
225W
20 @ 500mA, 5V
5A
200°C (TJ)
Chassis Mount
55CX
55CX
MPSH81
Fairchild/Micross Components

DIE TRANSISTOR RF PNP

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque4.992
-
-
-
-
-
-
-
-
-
-
-
BFU790F,115
NXP

TRANSISTOR NPN SOT343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
  • Gain: -
  • Power - Max: 234mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 235 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
pacote: SOT-343F
Estoque5.184
2.8V
25GHz
0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
-
234mW
235 @ 10mA, 2V
100mA
150°C (TJ)
Surface Mount
SOT-343F
4-DFP
BFU690F,115
NXP

TRANSISTOR NPN SOT343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: 18GHz
  • Noise Figure (dB Typ @ f): 0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz
  • Gain: 15.5dB ~ 18.5dB
  • Power - Max: 230mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
pacote: SOT-343F
Estoque81.054
5.5V
18GHz
0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz
15.5dB ~ 18.5dB
230mW
90 @ 20mA, 2V
100mA
150°C (TJ)
Surface Mount
SOT-343F
4-DFP
BFP740E6327
Infineon Technologies

RF TRANSISTOR, X BAND, NPN

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 42GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
  • Gain: 27dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
pacote: -
Request a Quote
4.7V
42GHz
0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
27dB
160mW
160 @ 25mA, 3V
30mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
58048
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
CP243-CM5943-WN
Central Semiconductor Corp

RF TRANSISTOR TO-39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 2.4GHz
  • Noise Figure (dB Typ @ f): 8dB @ 200MHz
  • Gain: 11.4dB
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 15V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacote: -
Request a Quote
30V
2.4GHz
8dB @ 200MHz
11.4dB
-
25 @ 50mA, 15V
400mA
-65°C ~ 150°C (TJ)
Surface Mount
Die
Die
NTE65
NTE Electronics, Inc

RF TRANS NPN 15V 5GHZ 3SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2.4dB ~ 3dB @ 500MHz ~ 1GHz
  • Gain: 18dB
  • Power - Max: 180mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 14mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Lead
  • Supplier Device Package: 3-SMD
pacote: -
Request a Quote
15V
5GHz
2.4dB ~ 3dB @ 500MHz ~ 1GHz
18dB
180mW
25 @ 14mA, 10V
30mA
-
Surface Mount
3-SMD, Flat Lead
3-SMD
HSG1002VE-TL-E
Renesas Electronics Corporation

RF 0.035A C BAND GERMANIUM NPN

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 38GHz
  • Noise Figure (dB Typ @ f): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
  • Gain: 8dB ~ 19.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 2V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-MFPAK
pacote: -
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3.5V
38GHz
0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
8dB ~ 19.5dB
200mW
100 @ 5mA, 2V
35mA
-
Surface Mount
4-SMD, Gull Wing
4-MFPAK
PH3134-10M
MACOM Technology Solutions

TRANSISTOR,BIPOLAR,RADAR,10W,3.1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 70W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 2L-FLG
  • Supplier Device Package: 2L-FLG
pacote: -
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60V
-
-
8dB
70W
-
1.2A
200°C (TJ)
Chassis Mount
2L-FLG
2L-FLG