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Transistores - Bipolares (BJT) - RF

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Imagem
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Fabricante
Descrição
pacote
Em estoque
Quantidade
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BF799E6327HTSA1
Infineon Technologies

TRANSISTOR NPN RF 20V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): 3dB @ 100MHz
  • Gain: -
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
pacote: TO-236-3, SC-59, SOT-23-3
Em estoque251
20V
800MHz
3dB @ 100MHz
-
280mW
40 @ 20mA, 10V
35mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BFP 720FESD E6327
Infineon Technologies

TRANS RF NPN 45GHZ 4.7V TSFP4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 45GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 1.3dB @ 150MHz ~ 10GHz
  • Gain: 10dB ~ 29dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
pacote: 4-SMD, Flat Leads
Em estoque136
4.7V
45GHz
0.5dB ~ 1.3dB @ 150MHz ~ 10GHz
10dB ~ 29dB
100mW
160 @ 15mA, 3V
30mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
NE461M02-T1-QS-AZ
CEL

SAME AS 2SC5337 NPN SILICON MEDI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
  • Gain: 8.3dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
pacote: TO-243AA
Em estoque482
15V
-
1.5dB ~ 2dB @ 500MHz ~ 1GHz
8.3dB
2W
60 @ 50mA, 10V
250mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
2SC5752-T1-A
CEL

RF TRANSISTOR NPN SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
  • Gain: 13dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
pacote: SC-82A, SOT-343
Em estoque108
6V
12GHz
1.7dB @ 2GHz
13dB
200mW
75 @ 30mA, 3V
100mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
hotNE67739-T1-A
CEL

RF TRANSISTOR NPN SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 14.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 12dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
pacote: TO-253-4, TO-253AA
Em estoque472
6V
14.5GHz
1.5dB @ 2GHz
12dB
200mW
75 @ 20mA, 3V
50mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
MS2361
Microsemi Corporation

TRANS RF BIPO 87.5W 2.6A M115

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 87.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 2.6A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M115
  • Supplier Device Package: M115
pacote: M115
Em estoque398
65V
1.025GHz ~ 1.15GHz
-
9dB
87.5W
-
2.6A
200°C (TJ)
Chassis Mount
M115
M115
MS2341
Microsemi Corporation

TRANS RF BIPO 87.5W 2.6A M115

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 87.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 2.6A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M115
  • Supplier Device Package: M115
pacote: M115
Em estoque267
65V
1.025GHz ~ 1.15GHz
-
9dB
87.5W
-
2.6A
200°C (TJ)
Chassis Mount
M115
M115
hotMS2201
Microsemi Corporation

TRANS RF BIPO 10W 250MA M220

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 10W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 0.95 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M220
  • Supplier Device Package: M220
pacote: M220
Em estoque2.746
45V
1.025GHz ~ 1.15GHz
-
9dB
10W
0.95 @ 10mA, 5V
250mA
200°C (TJ)
Chassis Mount
M220
M220
BFG25AW/X,115
NXP

TRANS RF NPN 5GHZ 5V SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 2dB @ 1GHz
  • Gain: -
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
  • Current - Collector (Ic) (Max): 6.5mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343 Reverse Pinning
  • Supplier Device Package: 4-SO
pacote: SOT-343 Reverse Pinning
Em estoque170
5V
5GHz
1.9dB ~ 2dB @ 1GHz
-
500mW
50 @ 500µA, 1V
6.5mA
175°C (TJ)
Surface Mount
SOT-343 Reverse Pinning
4-SO
UPA811T-T1-A
CEL

RF DUAL TRANSISTORS NPN SOT-363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
  • Gain: 7.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacote: 6-TSSOP, SC-88, SOT-363
Em estoque320
10V
8GHz
1.9dB @ 2GHz
7.5dB
200mW
80 @ 5mA, 3V
35mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
NE68139-A
CEL

RF TRANSISTOR NPN SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 13.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
pacote: TO-253-4, TO-253AA
Em estoque244
10V
9GHz
1.2dB @ 1GHz
13.5dB
200mW
50 @ 20mA, 8V
65mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
KSC1393OTA
Fairchild/ON Semiconductor

TRANSISTOR NPN 30V 20MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 700MHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz
  • Gain: 20dB ~ 24dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 10V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Em estoque196
30V
700MHz
2dB ~ 3dB @ 200MHz
20dB ~ 24dB
250mW
60 @ 2mA, 10V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BFR520T,115
NXP

TRANS NPN 15V 9GHZ SOT-416

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SC-75
pacote: SC-75, SOT-416
Em estoque270
15V
9GHz
1.1dB ~ 2.1dB @ 900MHz
-
150mW
60 @ 20mA, 6V
70mA
150°C (TJ)
Surface Mount
SC-75, SOT-416
SC-75
BGR420H6327XTSA1
Infineon Technologies

TRANS RF NPN 13V 25MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 13V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
  • Gain: -
  • Power - Max: 120mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
pacote: SC-82A, SOT-343
Em estoque365
13V
-
1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
-
120mW
-
25mA
-65°C ~ 150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP720FESDH6327XTSA1
Infineon Technologies

TRANS RF NPN 45GHZ 4.7V TSFP-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 45GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 1.3dB @ 150MHz ~ 10GHz
  • Gain: 10dB ~ 29dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
pacote: 4-SMD, Flat Leads
Em estoque412
4.7V
45GHz
0.5dB ~ 1.3dB @ 150MHz ~ 10GHz
10dB ~ 29dB
100mW
160 @ 15mA, 3V
30mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
BFP720FH6327XTSA1
Infineon Technologies

TRANS RF NPN 45GHZ 3.5V TSFP-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 45GHz
  • Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz
  • Gain: 10.5dB ~ 28dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
pacote: 4-SMD, Flat Leads
Em estoque150
4.7V
45GHz
0.4dB ~ 1dB @ 150MHz ~ 10GHz
10.5dB ~ 28dB
100mW
160 @ 13mA, 3V
25mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
BFP196WNH6327XTSA1
Infineon Technologies

IC RF TRANS NPN SOT343-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7.5GHz
  • Noise Figure (dB Typ @ f): 1.3dB @ 900MHz
  • Gain: 9.7dB
  • Power - Max: 700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
pacote: SC-82A, SOT-343
Em estoque452
12V
7.5GHz
1.3dB @ 900MHz
9.7dB
700mW
70 @ 50mA, 8V
150mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
1517-110M
Microsemi Corporation

TRANS RF BIPO 350W 9A 55AW1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: 1.48GHz ~ 1.65GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.3dB ~ 8.6dB
  • Power - Max: 350W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 9A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW-1
  • Supplier Device Package: 55AW-1
pacote: 55AW-1
Em estoque473
70V
1.48GHz ~ 1.65GHz
-
7.3dB ~ 8.6dB
350W
20 @ 1A, 5V
9A
-
Chassis Mount
55AW-1
55AW-1
0910-60M
Microsemi Corporation

TRAN RF BIPO 180W 1000MHZ 55AW

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 890MHz ~ 1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB ~ 8.5dB
  • Power - Max: 180W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW
  • Supplier Device Package: 55AW
pacote: 55AW
Em estoque166
65V
890MHz ~ 1GHz
-
8dB ~ 8.5dB
180W
-
8A
200°C (TJ)
Chassis Mount
55AW
55AW
MAPRST0912-50
M/A-Com Technology Solutions

TRANS NPN 50W 960MHZ-1215MHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 10.16dB ~ 10.25dB
  • Power - Max: 50W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 5.3A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Em estoque332
65V
-
-
10.16dB ~ 10.25dB
50W
-
5.3A
200°C (TJ)
Chassis Mount
-
-
0912-7
Microsemi Corporation

TRANS RF BIPO 50W 1A 55CX

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.5dB
  • Power - Max: 50W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55CX
  • Supplier Device Package: 55CX
pacote: 55CX
Em estoque444
60V
960MHz ~ 1.215GHz
-
8.5dB
50W
10 @ 100mA, 5V
1A
200°C (TJ)
Chassis Mount
55CX
55CX
1002MP
Microsemi Corporation

TRANS RF BIPO 7W 250MA 55FW1

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.24dB ~ 11dB
  • Power - Max: 7W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55FW-1
  • Supplier Device Package: 55FW-1
pacote: 55FW-1
Em estoque346
50V
960MHz ~ 1.215GHz
-
8.24dB ~ 11dB
7W
20 @ 100mA, 5V
250mA
200°C (TJ)
Chassis Mount
55FW-1
55FW-1
SD1127
Microsemi Corporation

TRANSISTOR BIPO TO-39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 12dB
  • Power - Max: 8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 640mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
pacote: TO-205AD, TO-39-3 Metal Can
Em estoque248
18V
175MHz
-
12dB
8W
10 @ 50mA, 5V
640mA
200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
hot2SC4713KT146R
Rohm Semiconductor

TRANS RF SW 6V 50MA SMT3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3
pacote: TO-236-3, SC-59, SOT-23-3
Em estoque1.302
6V
800MHz
-
-
200mW
180 @ 5mA, 5V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3
BFU580QX
NXP

TRANS RF NPN 12V 60MA SOT89-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10.5GHz
  • Noise Figure (dB Typ @ f): 1.3dB @ 1.8GHz
  • Gain: 8.5dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
pacote: TO-243AA
Em estoque1.701
12V
10.5GHz
1.3dB @ 1.8GHz
8.5dB
1W
60 @ 30mA, 8V
60mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
NE68039R-T1
CEL

TRANS NPN 2GHZ SOT-143R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.7dB ~ 2.6dB @ 2GHz ~ 4GHz
  • Gain: 6.5dB ~ 11dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
pacote: SOT-143R
Em estoque4.941
10V
10GHz
1.7dB ~ 2.6dB @ 2GHz ~ 4GHz
6.5dB ~ 11dB
200mW
50 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
SOT-143R
SOT-143R
hotMT3S16U(TE85L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 5V 1GHZ USM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 4GHz
  • Noise Figure (dB Typ @ f): 2.4dB @ 1GHz
  • Gain: 4.5dBi
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
pacote: SC-70, SOT-323
Em estoque24.000
5V
4GHz
2.4dB @ 1GHz
4.5dBi
100mW
80 @ 5mA, 1V
60mA
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
hot2SC4713KT146S
Rohm Semiconductor

TRANS NPN 6V 50MA SOT-346

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3
pacote: TO-236-3, SC-59, SOT-23-3
Em estoque35.960
6V
800MHz
-
-
200mW
180 @ 5mA, 5V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3
KSP10TA
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 25V TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Em estoque3.197
25V
650MHz
-
-
350mW
60 @ 4mA, 10V
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hotKSP10BU
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 25V TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacote: TO-226-3, TO-92-3 (TO-226AA)
Em estoque201.170
25V
650MHz
-
-
350mW
60 @ 4mA, 10V
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3