Página 16 - Transistores - Bipolares (BJT) - RF | Produtos semicondutores discretos | Heisener Electronics
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Transistores - Bipolares (BJT) - RF

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Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFR 182 B6663
Infineon Technologies

TRANSISTOR RF NPN 12V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
  • Gain: 12dB ~ 18dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque4.736
12V
8GHz
0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
12dB ~ 18dB
250mW
70 @ 10mA, 8V
35mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
MRF559GT
Microsemi Corporation

COMM/BIPOLAR TRANSISTOR

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 870MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.5dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque5.152
16V
870MHz
-
9.5dB
2W
30 @ 50mA, 10V
150mA
-
-
-
-
NE461M02-T1-QR-AZ
CEL

SAME AS 2SC5337 NPN SILICON MEDI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
  • Gain: 8.3dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: -
pacote: TO-243AA
Estoque7.920
15V
-
1.5dB ~ 2dB @ 500MHz ~ 1GHz
8.3dB
2W
60 @ 50mA, 10V
250mA
150°C (TJ)
Surface Mount
TO-243AA
-
MS2341
Microsemi Corporation

TRANS RF BIPO 87.5W 2.6A M115

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 87.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 2.6A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M115
  • Supplier Device Package: M115
pacote: M115
Estoque4.272
65V
1.025GHz ~ 1.15GHz
-
9dB
87.5W
-
2.6A
200°C (TJ)
Chassis Mount
M115
M115
NE85633-T1B-R23-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacote: TO-236-3, SC-59, SOT-23-3
Estoque2.768
12V
7GHz
1.1dB @ 1GHz
11.5dB
200mW
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
MSC3930-BT1G
ON Semiconductor

TRANS NPN RF BIPO 20V SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 150MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3 (SOT323)
pacote: SC-70, SOT-323
Estoque3.488
20V
150MHz
-
-
200mW
70 @ 1mA, 10V
30mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70-3 (SOT323)
hot MSC2295-BT1G
ON Semiconductor

TRANS NPN RF BIPO 20V SC-59

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 150MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
pacote: TO-236-3, SC-59, SOT-23-3
Estoque36.000
20V
150MHz
-
-
200mW
70 @ 1mA, 10V
30mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
NE68830-A
CEL

TRANS NPN 2GHZ SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacote: SC-70, SOT-323
Estoque4.480
6V
4.5GHz
1.7dB ~ 2.5dB @ 2GHz
-
150mW
80 @ 3mA, 1V
100mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
hot KSC3123OMTF
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 50MA SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 3.8dB ~ 5.5dB @ 200MHz
  • Gain: 20dB ~ 23dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacote: TO-236-3, SC-59, SOT-23-3
Estoque144.000
20V
1.4GHz
3.8dB ~ 5.5dB @ 200MHz
20dB ~ 23dB
150mW
90 @ 5mA, 10V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
ZUMTS17HTC
Diodes Incorporated

TRANSISTOR RF NPN SC70-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
  • Gain: -
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacote: SC-70, SOT-323
Estoque3.200
15V
1.3GHz
4.5dB @ 500MHz
-
330mW
70 @ 2mA, 1V
25mA
-55°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
hot AT-41533-TR1G
Broadcom Limited

IC TRANS NPN GP BIPOLAR SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz
  • Gain: 9dB ~ 14.5dB
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacote: TO-236-3, SC-59, SOT-23-3
Estoque1.369.476
12V
-
1dB ~ 1.6dB @ 900MHz ~ 2.4GHz
9dB ~ 14.5dB
225mW
30 @ 5mA, 5V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2731-100M
Microsemi Corporation

TRANS RF BIPO 575W 15A 55KS1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 2.7GHz ~ 3.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8db ~ 9.4dB
  • Power - Max: 575W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
  • Current - Collector (Ic) (Max): 15A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KS-1
  • Supplier Device Package: 55KS-1
pacote: 55KS-1
Estoque3.248
65V
2.7GHz ~ 3.1GHz
-
8db ~ 9.4dB
575W
15 @ 600mA, 5V
15A
200°C (TJ)
Chassis Mount
55KS-1
55KS-1
MS1008
Microsemi Corporation

TRANS RF BIPO 233W 10A TO-220AC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 14dB
  • Power - Max: 233W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1.4A, 6V
  • Current - Collector (Ic) (Max): 10A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M164
  • Supplier Device Package: M164
pacote: M164
Estoque4.528
55V
30MHz
-
14dB
233W
15 @ 1.4A, 6V
10A
200°C (TJ)
Chassis Mount
M164
M164
MS1227
Microsemi Corporation

TRANS RF BIPO 80W 4.5A M113

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 15dB
  • Power - Max: 80W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V
  • Current - Collector (Ic) (Max): 4.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M113
  • Supplier Device Package: M113
pacote: M113
Estoque3.584
18V
30MHz
-
15dB
80W
200 @ 1A, 5V
4.5A
200°C (TJ)
Chassis Mount
M113
M113
NE68133-T1B-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 13dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacote: TO-236-3, SC-59, SOT-23-3
Estoque3.312
10V
9GHz
1.2dB @ 1GHz
13dB
200mW
50 @ 20mA, 8V
65mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
BFU520YF
NXP

TRANS RF NPN 12V 30MA 6TSSOP

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
  • Gain: 14dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: 5-TSSOP
pacote: 5-TSSOP, SC-70-5, SOT-353
Estoque5.632
12V
10GHz
1dB @ 1.8GHz
14dB
450mW
60 @ 5mA, 8V
30mA
-40°C ~ 150°C (TJ)
Surface Mount
5-TSSOP, SC-70-5, SOT-353
5-TSSOP
MAPR-000912-500S00
M/A-Com Technology Solutions

TRANS NPN 500W 960MHZ-1215MHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.44dB ~ 9.77dB
  • Power - Max: 500W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 52.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque6.096
80V
-
-
9.44dB ~ 9.77dB
500W
-
52.5A
200°C (TJ)
Chassis Mount
-
-
BFR193FH6327XTSA1
Infineon Technologies

TRANS RF NPN 12V 80MA TSFP-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
  • Gain: 12.5dB
  • Power - Max: 580mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: PG-TSFP-3
pacote: SOT-723
Estoque29.568
12V
8GHz
1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
12.5dB
580mW
70 @ 30mA, 8V
80mA
150°C (TJ)
Surface Mount
SOT-723
PG-TSFP-3
BFR 106 E6327
Infineon Technologies

TRANSISTOR RF NPN 15V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
  • Gain: 8.5dB ~ 13dB
  • Power - Max: 700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
  • Current - Collector (Ic) (Max): 210mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque24.480
15V
5GHz
1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
8.5dB ~ 13dB
700mW
70 @ 70mA, 8V
210mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BFU590QX
NXP

TRANS RF NPN 12V 200MA SOT89-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6.5dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 80mA, 8V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
pacote: TO-243AA
Estoque26.622
12V
8GHz
-
6.5dB
2W
60 @ 80mA, 8V
200mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
BFT92,215
NXP

TRANS PNP 25MA 15V 5GHZ SOT23

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 500MHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 14mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
pacote: TO-236-3, SC-59, SOT-23-3
Estoque259.386
15V
5GHz
2.5dB @ 500MHz
-
300mW
20 @ 14mA, 10V
25mA
175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
hot MRF448
M/A-Com Technology Solutions

TRANS RF NPN 50V 16A 211-11

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 14dB
  • Power - Max: 250W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 10V
  • Current - Collector (Ic) (Max): 16A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 211-11, Style 2
  • Supplier Device Package: 211-11, Style 2
pacote: 211-11, Style 2
Estoque6.256
50V
-
-
14dB
250W
10 @ 5A, 10V
16A
-
Chassis Mount
211-11, Style 2
211-11, Style 2
NTE2687
NTE Electronics, Inc

RF TRANS NPN 450V 20MHZ TO220

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 450V
  • Frequency - Transition: 20MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 45W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 4A, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
pacote: -
Request a Quote
450V
20MHz
-
-
45W
10 @ 4A, 5V
8A
150°C (TJ)
Through Hole
TO-220-3
TO-220
2SC4995YD-TL-E
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 900MHz
  • Gain: -
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
pacote: -
Request a Quote
8V
11GHz
1.1dB @ 900MHz
-
100mW
50 @ 20mA, 5V
50mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
CMPAK-4
2SC5013-A
CEL

RF TRANS NPN 10V 10GHZ SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 9.5dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: -
pacote: -
Request a Quote
10V
10GHz
1.8dB @ 2GHz
9.5dB
150mW
50 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
-
MS2506
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SC5108-Y-LF
Toshiba Semiconductor and Storage

RF TRANS NPN 10V 6GHZ SSM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 11dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
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10V
6GHz
-
11dB
100mW
120 @ 5mA, 5V
30mA
-
Surface Mount
SC-75, SOT-416
SSM
BFR92ALT1
Microsemi Corporation

RF TRANS 15V 4.5GHZ SOT23

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 3dB @ 500MHz
  • Gain: -
  • Power - Max: 273mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 14mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacote: -
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15V
4.5GHz
3dB @ 500MHz
-
273mW
40 @ 14mA, 10V
25mA
150°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23