Toshiba - P-channel power MOSFETs benefit from advanced trench-gate processes (TPH1R712MD,L1Q) | Heisener Electronics
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Toshiba - P-channel power MOSFETs benefit from advanced trench-gate processes (TPH1R712MD,L1Q)

Technology Cover
Data de postagem: 2015-10-17
 Toshiba's P-channel MOSFETs feature P-channel power MOSFETs for load switching in ultra-portable mobile computing devices and battery protection circuits for large-capacity batteries. P-channel MOSFETs developed using advanced trench gate processes and packaging technologies are optimized to provide low on-resistance. These low on-resistance power MOSFETs also provide high current ratings, low capacitance, and high allowable power dissipation in a small size to meet the lower voltage and lower power requirements of system power supplies in portable electronic applications. This product includes a range of low-voltage 1.5V operating devices with industry-leading on-resistance for applications with rated currents ranging from 1A to 5A. The design of the P-channel MOSFET makes it very suitable for load switching in mobile phones, digital cameras, portable audio players and other portable electronic devices, as well as battery circuit protection for large-capacity batteries such as lithium-ion batteries.