Infineon Technologies has released a new power module for the car :HybridPACK Drive G2. It builds on its established HybridPACK Drive G1 concept in the integrated B6 package, offering scalability in the same footprint and extending it to higher power and ease of use. The new power modules will feature different current ratings, voltage levels (750V and 1200V) and the company's next generation chip technologies, EDT3 (Si IGBT) and CoolSiC G2 MOSFET.
With a power range of up to 300kW at 750V and 1200V, the new modules offer high ease of use and new features, including integrated options for next-generation phase current sensors and on-chip temperature sensing, resulting in higher system costs. Improved assembly and interconnection techniques are used to achieve higher performance and power density. The adoption of new interconnect technology (chip sintering) and new materials (new black plastic housing) allows for higher temperature ratings, resulting in higher performance and longer product life.
The first generation (G1) was launched in 2017 and uses silicon EDT2 technology. It provides a power range of 100kW to 180kW in the 750V class. In 2021, the company expanded its product range with the introduction of the first generation HybridPACK Drive vehicle CoolSiC mosfet, which enables inverter designs to achieve higher power of up to 250kW within the 1200V class, longer driving range, smaller battery size as well as optimized system size and cost.
