WeEn Semiconductors Produtos

BTA216B-600F,118

WeEn Semiconductors

TRIAC 600V 16A D2PAK

• Triac Type: Standard
• Voltage - Off State: 600V
• Current - On State (It (RMS)) (Max): 16A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 150A
• Current - Gate Trigger (Igt) (Max): 25mA
• Current - Hold (Ih) (Max): 30mA
• Configuration: Single
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BTA410Y-800BT,127

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TRIAC 800V 10A TO220AB

• Triac Type: Standard
• Voltage - Off State: 800V
• Current - On State (It (RMS)) (Max): 10A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 110A
• Current - Gate Trigger (Igt) (Max): 50mA
• Current - Hold (Ih) (Max): 60mA
• Configuration: Single
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Isolated Tab
• Supplier Device Package: TO-220AB

pacote: TO-220-3 Isolated Tab

BTA312X-800C,127

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TRIAC 800V 12A TO220-3

• Triac Type: Standard
• Voltage - Off State: 800V
• Current - On State (It (RMS)) (Max): 12A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Non Rep. Surge 50, 60Hz (Itsm): 95A, 105A
• Current - Gate Trigger (Igt) (Max): 35mA
• Current - Hold (Ih) (Max): 35mA
• Configuration: Single
• Operating Temperature: 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: TO-220F

pacote: TO-220-3 Full Pack, Isolated Tab

BTA212-600D,127

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TRIAC SENS GATE 600V 12A TO220AB

• Triac Type: Logic - Sensitive Gate
• Voltage - Off State: 600V
• Current - On State (It (RMS)) (Max): 12A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Non Rep. Surge 50, 60Hz (Itsm): 95A, 105A
• Current - Gate Trigger (Igt) (Max): 5mA
• Current - Hold (Ih) (Max): 15mA
• Configuration: Single
• Operating Temperature: 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

pacote: TO-220-3

BTA206X-800CT/L03Q

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BTA206X-800CT/L03/TO-220F/STAN

• Triac Type: Standard
• Voltage - Off State: 800V
• Current - On State (It (RMS)) (Max): 6A
• Voltage - Gate Trigger (Vgt) (Max): 1V
• Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 66A
• Current - Gate Trigger (Igt) (Max): 35mA
• Current - Hold (Ih) (Max): 35mA
• Configuration: Single
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: TO-220F

pacote: TO-220-3 Full Pack, Isolated Tab

BTA201-600E/L02EP

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BTA201-600E/L02/TO-92/STANDARD

• Triac Type: Standard
• Voltage - Off State: 600V
• Current - On State (It (RMS)) (Max): 1A
• Voltage - Gate Trigger (Vgt) (Max): 1V
• Current - Non Rep. Surge 50, 60Hz (Itsm): 12.5A, 13.7A
• Current - Gate Trigger (Igt) (Max): 10mA
• Current - Hold (Ih) (Max): 12mA
• Configuration: Single
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

pacote: TO-226-3, TO-92-3 (TO-226AA)

BTA2008-600EQP

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BTA2008-600E/TO-92/STANDARD MA

• Triac Type: Standard
• Voltage - Off State: 600V
• Current - On State (It (RMS)) (Max): 800mA
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Non Rep. Surge 50, 60Hz (Itsm): 9A, 9.9A
• Current - Gate Trigger (Igt) (Max): 10mA
• Current - Hold (Ih) (Max): 12mA
• Configuration: Single
• Operating Temperature: 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3

pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

BT131-600DQP

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TRIAC SENS GATE 600V 1A TO92-3

• Triac Type: Logic - Sensitive Gate
• Voltage - Off State: 600V
• Current - On State (It (RMS)) (Max): 1A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Non Rep. Surge 50, 60Hz (Itsm): 12.5A, 13.7A
• Current - Gate Trigger (Igt) (Max): 5mA
• Current - Hold (Ih) (Max): 10mA
• Configuration: Single
• Operating Temperature: 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

pacote: TO-226-3, TO-92-3 (TO-226AA)

BT137-800E,127

WeEn Semiconductors

TRIAC SENS GATE 800V 8A TO220AB

• Triac Type: Logic - Sensitive Gate
• Voltage - Off State: 800V
• Current - On State (It (RMS)) (Max): 8A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A
• Current - Gate Trigger (Igt) (Max): 10mA
• Current - Hold (Ih) (Max): 20mA
• Configuration: Single
• Operating Temperature: 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

pacote: TO-220-3

BTA316B-600B,118

WeEn Semiconductors

TRIAC 600V 16A D2PAK

• Triac Type: Standard
• Voltage - Off State: 600V
• Current - On State (It (RMS)) (Max): 16A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 150A
• Current - Gate Trigger (Igt) (Max): 50mA
• Current - Hold (Ih) (Max): 60mA
• Configuration: Single
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TYN16X-600CTNQ

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TYN16X-600CTN/TO-220F/STANDARD

• Voltage - Off State: -
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Voltage - On State (Vtm) (Max): -
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): -
• Current - Hold (Ih) (Max): -
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• SCR Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacote: -

BT169D/01,112

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THYRISTOR 400V 50MA TO92-3

• Voltage - Off State: 400V
• Voltage - Gate Trigger (Vgt) (Max): 800mV
• Current - Gate Trigger (Igt) (Max): 200µA
• Voltage - On State (Vtm) (Max): 1.7V
• Current - On State (It (AV)) (Max): 500mA
• Current - On State (It (RMS)) (Max): 800mA
• Current - Hold (Ih) (Max): 5mA
• Current - Off State (Max): 100µA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
• SCR Type: Sensitive Gate
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

pacote: TO-226-3, TO-92-3 (TO-226AA)

BT152-800R,127

WeEn Semiconductors

THYRISTOR 20A 800V TO220AB

• Voltage - Off State: 800V
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 32mA
• Voltage - On State (Vtm) (Max): 1.75V
• Current - On State (It (AV)) (Max): 13A
• Current - On State (It (RMS)) (Max): 20A
• Current - Hold (Ih) (Max): 60mA
• Current - Off State (Max): 1mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 220A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

pacote: TO-220-3

BYR29X-600,127

WeEn Semiconductors

DIODE GEN PURP 600V 8A TO220F

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: TO-220FP
• Operating Temperature - Junction: 150°C (Max)

pacote: TO-220-2 Full Pack, Isolated Tab

BYC30W-600PQ

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DIODE GEN PURP 600V 30A TO247-2

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 2.75V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 22ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247-2
• Operating Temperature - Junction: 175°C (Max)

pacote: TO-247-2

BYV430J-600PQ

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BYV430J-600PQ TO3PF STANDARD

• Diode Configuration: -
• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io) (per Diode): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature - Junction: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacote: -

BYV42E-150,127

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DIODE ARRAY GP 150V 30A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 28ns
• Current - Reverse Leakage @ Vr: 100µA @ 150V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

pacote: TO-220-3

BYQ28X-200,127

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DIODE ARRAY GP 200V 10A TO220-3

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: TO-220-3

pacote: TO-220-3 Full Pack, Isolated Tab

NXPSC12650B6J

WeEn Semiconductors

DIODE SIL CARBIDE 650V 12A D2PAK

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 80 µA @ 650 V
• Capacitance @ Vr, F: 380pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• Operating Temperature - Junction: 175°C (Max)

pacote: -

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WB30FV60ALZ

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WB30FV60AL/NAU000/NO MARK*CHIPS

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 65 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Wafer
• Operating Temperature - Junction: -40°C ~ 175°C

pacote: -

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WN3S30100CQ

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DIODE ARR SCHOT 100V 15A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 100 V
• Operating Temperature - Junction: 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

pacote: -

BYC30-1200PQ

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DIODE GEN PURP 1.2KV 30A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 65 ns
• Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: 175°C (Max)

pacote: -

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BYV40W-600PQ

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DIODE GEN PURP 600V 40A TO247-2

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 79 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247-2
• Operating Temperature - Junction: 175°C (Max)

pacote: -

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NXPSC04650X6Q

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DIODE SIL CARBIDE 650V 4A TO220F

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 170 µA @ 650 V
• Capacitance @ Vr, F: 130pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: TO-220F
• Operating Temperature - Junction: 175°C (Max)

pacote: -

WNSC2D16650CJQ

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DIODE ARR SIC SCHOT 650V TO3PF

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io) (per Diode): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 40 µA @ 650 V
• Operating Temperature - Junction: 175°C
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3PF

pacote: -

WNSC6D20650B6J

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DIODE SIL CARBIDE 650V 20A D2PAK

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 80 µA @ 650 V
• Capacitance @ Vr, F: 780pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• Operating Temperature - Junction: 175°C

pacote: -

BYV5ED-600PJ

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DIODE GEN PURP 600V 5A DPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: DPAK
• Operating Temperature - Junction: 175°C

pacote: -

WNSC5D30650CW6Q

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DIODE ARR SIC 650V 30A TO247-3

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 50 µA @ 650 V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

pacote: -

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