Página 62 - Toshiba Semiconductor and Storage Produtos

Nº de peças	Fabricante	Descrição	pacote	Estoque
TPCC8065-H,LQ(S	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 13A 8TSON-ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta), 18W (Tc) Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	pacote: 8-PowerVDFN	Estoque273.600
TK8A60W,S4VX	Toshiba Semiconductor and Storage	MOSFET N CH 600V 8A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	pacote: TO-220-3 Full Pack, Isolated Tab	Estoque2.992
TPC8408,LQ(S	Toshiba Semiconductor and Storage	MOSFET N/P-CH 40V 6.1A/5.3A 8SOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A Rds On (Max) @ Id, Vgs: 32 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Power - Max: 450mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque5.904
2SA1761,T6F(M	Toshiba Semiconductor and Storage	TRANS PNP 3A 50V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	pacote: TO-226-3, TO-92-3 Long Body	Estoque7.424
RN1303(TE85L,F)	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.1W USM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	pacote: SC-70, SOT-323	Estoque34.800
RN1415(TE85L,F)	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.2W S-MINI Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	pacote: TO-236-3, SC-59, SOT-23-3	Estoque103.200
HN1B04F(TE85L,F)	Toshiba Semiconductor and Storage	TRANS NPN/PNP 30V 0.5A SM6 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Power - Max: 300mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	pacote: SC-74, SOT-457	Estoque5.232
RN2971FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	pacote: SOT-563, SOT-666	Estoque3.600
1SS405,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 50MA ESC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 50mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500nA @ 20V Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: 125°C (Max)	pacote: SC-79, SOD-523	Estoque95.520
1SS374(TE85L,F)	Toshiba Semiconductor and Storage	DIODE ARRAY SCHOTTKY 10V SC59 Diode Configuration: 1 Pair Series Connection Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 10V Operating Temperature - Junction: 125°C (Max) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	pacote: TO-236-3, SC-59, SOT-23-3	Estoque38.400
TBD62003AFG,EL	Toshiba Semiconductor and Storage	IC LOAD SWITCH 7CH 0.5A 16SOP Switch Type: General Purpose Number of Outputs: 7 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: N-Channel Interface: On/Off Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.8A Rds On (Typ): - Input Type: Inverting Features: - Fault Protection: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-SOIC (0.173", 4.40mm Width) Supplier Device Package: 16-SOP	pacote: 16-SOIC (0.173", 4.40mm Width)	Estoque52.590
TB6562AFG,8,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 30SSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: DMOS Step Resolution: 1, 1/2, 1/4 Applications: General Purpose Current - Output: 1.5A Voltage - Supply: 10 V ~ 34 V Voltage - Load: 10 V ~ 34 V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 30-BSOP (0.295", 7.50mm Width) Supplier Device Package: 30-SSOP	pacote: 30-BSOP (0.295", 7.50mm Width)	Estoque138.510
TB6612FNG,C,8,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 24SSOP Motor Type - Stepper: - Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: Power MOSFET Step Resolution: - Applications: General Purpose Current - Output: 1A Voltage - Supply: 2.7 V ~ 5.5 V Voltage - Load: 2.5 V ~ 13.5 V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-LSSOP (0.220", 5.60mm Width) Supplier Device Package: 24-SSOP	pacote: 24-LSSOP (0.220", 5.60mm Width)	Estoque238.842
TC74HC32AF(EL,F)	Toshiba Semiconductor and Storage	IC GATE OR 4CH 2-INP 14SOP Logic Type: OR Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 5.2mA, 5.2mA Logic Level - Low: 0.5 V ~ 1.8 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-SOP Package / Case: 14-SOIC (0.209", 5.30mm Width)	pacote: 14-SOIC (0.209", 5.30mm Width)	Estoque22.200
TC74VHC125FTELM	Toshiba Semiconductor and Storage	IC BUS BUFFER QUAD N-INV 14TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 4 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP	pacote: 14-TSSOP (0.173", 4.40mm Width)	Estoque5.328
TC74HC4051AF(EL,F)	Toshiba Semiconductor and Storage	IC MUX/DEMUX 8:1 100 OHM SOP16 Switch Circuit: - Multiplexer/Demultiplexer Circuit: 8:1 Number of Circuits: 1 On-State Resistance (Max): 100 Ohm Channel-to-Channel Matching (ΔRon): 5 Ohm Voltage - Supply, Single (V+): 2 V ~ 6 V Voltage - Supply, Dual (V±): ±2 V ~ 6 V Switch Time (Ton, Toff) (Max): 18ns, 29ns -3db Bandwidth: 85MHz Charge Injection: - Channel Capacitance (CS(off), CD(off)): 2pF, 70pF Current - Leakage (IS(off)) (Max): 100nA Crosstalk: -50dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-SOIC (0.209", 5.30mm Width) Supplier Device Package: 16-SOP	pacote: 16-SOIC (0.209", 5.30mm Width)	Estoque22.800
TL1L4-NW1,L	Toshiba Semiconductor and Storage	LED LETERAS COOL WHT 5000K 2SMD Color: White, Cool CCT (K): 5000K Flux @ 85°C, Current - Test: 135 lm (120 lm ~ 150 lm) Flux @ 25°C, Current - Test: - Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.8V Lumens/Watt @ Current - Test: 138 lm/W CRI (Color Rendering Index): 80 Current - Max: 1.5A Viewing Angle: 120° Mounting Type: Surface Mount Package / Case: 1414 (3535 Metric) Supplier Device Package: 3535 Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm) Height - Seated (Max): 0.085" (2.15mm)	pacote: 1414 (3535 Metric)	Estoque5.382
TL1L3-DW0,L	Toshiba Semiconductor and Storage	LED LETERAS COOL WHT 6500K 2SMD Color: White, Cool CCT (K): 6500K Flux @ 85°C, Current - Test: - Flux @ 25°C, Current - Test: 145 lm (Typ) Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.85V Lumens/Watt @ Current - Test: 145 lm/W CRI (Color Rendering Index): 70 Current - Max: 1A Viewing Angle: 100° Mounting Type: Surface Mount Package / Case: 1414 (3535 Metric) Supplier Device Package: 3535 Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm) Height - Seated (Max): 0.099" (2.52mm)	pacote: 1414 (3535 Metric)	Estoque4.590
TLP5214(D4,E	Toshiba Semiconductor and Storage	OPTOISO 5KV GATE DRIVER 16SO Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 32ns, 18ns Current - Output High, Low: 3A, 3A Current - Peak Output: 4A Voltage - Forward (Vf) (Typ): 1.7V (Max) Current - DC Forward (If) (Max): 25mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SO Approvals: CQC, CSA, cUL, UL, VDE	pacote: 16-SOIC (0.295", 7.50mm Width)	Estoque6.072
TLP701H(F)	Toshiba Semiconductor and Storage	OPTOISO 5KV GATE DRIVER 6SDIP GW Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 700ns, 700ns Pulse Width Distortion (Max): 500ns Rise / Fall Time (Typ): 50ns, 50ns Current - Output High, Low: 400mA, 400mA Current - Peak Output: 600mA Voltage - Forward (Vf) (Typ): 1.57V Current - DC Forward (If) (Max): 25mA Voltage - Supply: 10 V ~ 30 V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.268", 6.80mm Width) Supplier Device Package: 6-SDIP Gull Wing Approvals: cUL, UL	pacote: 6-SOIC (0.268", 6.80mm Width)	Estoque9.564
TCR3RM285A-LF-SE	Toshiba Semiconductor and Storage	LDO REG 2.85V 300MA 4DFNC Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.85V Voltage - Output (Max): - Voltage Dropout (Max): 0.15V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 12 µA Current - Supply (Max): - PSRR: - Control Features: Current Limit, Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: 4-DFNC (1x1)	pacote: -	Estoque26.730
TK40S06N1L-LXHQ	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 40A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88.2W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacote: -	Estoque2.928
RN2910-LF-CT	Toshiba Semiconductor and Storage	PNPX2 BRT Q1BSR4.7KOHM Q1BERINF. Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SMQ	pacote: -	Estoque9.000
2SC5108-Y-LF	Toshiba Semiconductor and Storage	RF TRANS NPN 10V 6GHZ SSM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): - Gain: 11dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	pacote: -	Request a Quote
TCR2EN11-LF-SE	Toshiba Semiconductor and Storage	LDO REG VOUT=1.1V IOUT=200MA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.1V Voltage - Output (Max): - Voltage Dropout (Max): 0.65V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 60 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	pacote: -	Estoque30.000
SSM3J168F-LF	Toshiba Semiconductor and Storage	MOSFET P-CH 60V 400MA S-MINI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	pacote: -	Estoque51.261
TPCP8J01-TE85L-F-M	Toshiba Semiconductor and Storage	MOSFET P-CH 32V 5.5A PS-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 32 V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.14W (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PS-8 Package / Case: 8-SMD, Flat Lead	pacote: -	Request a Quote
TC7MBL3125CFT-QCEL	Toshiba Semiconductor and Storage	PB-F CMOS BUS SWITCHES (SINGLE P Type: Bus Switch Circuit: 4 x 1:1 Independent Circuits: 1 Current - Output High, Low: - Voltage Supply Source: Single Supply Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP	pacote: -	Request a Quote

TPCC8065-H,LQ(S

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 13A 8TSON-ADV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 6.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Package / Case: 8-PowerVDFN

pacote: 8-PowerVDFN

Estoque273.600

TK8A60W,S4VX

Toshiba Semiconductor and Storage

MOSFET N CH 600V 8A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 300V
Vgs (Max): ±30V
FET Feature: Super Junction
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack, Isolated Tab

pacote: TO-220-3 Full Pack, Isolated Tab

Estoque2.992

TPC8408,LQ(S

Toshiba Semiconductor and Storage

MOSFET N/P-CH 40V 6.1A/5.3A 8SOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A
Rds On (Max) @ Id, Vgs: 32 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Power - Max: 450mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque5.904

2SA1761,T6F(M

Toshiba Semiconductor and Storage

TRANS PNP 3A 50V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

pacote: TO-226-3, TO-92-3 Long Body

Estoque7.424

RN1303(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W USM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

pacote: SC-70, SOT-323

Estoque34.800

RN1415(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.2W S-MINI

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

pacote: TO-236-3, SC-59, SOT-23-3

Estoque103.200

HN1B04F(TE85L,F)

Toshiba Semiconductor and Storage

TRANS NPN/PNP 30V 0.5A SM6

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Power - Max: 300mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6

pacote: SC-74, SOT-457

Estoque5.232

RN2971FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

pacote: SOT-563, SOT-666

Estoque3.600

1SS405,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 50MA ESC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 50mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500nA @ 20V
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)

pacote: SC-79, SOD-523

Estoque95.520

1SS374(TE85L,F)

Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 10V SC59

Diode Configuration: 1 Pair Series Connection
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 10V
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20µA @ 10V
Operating Temperature - Junction: 125°C (Max)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59

pacote: TO-236-3, SC-59, SOT-23-3

Estoque38.400

TBD62003AFG,EL

Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.5A 16SOP

Switch Type: General Purpose
Number of Outputs: 7
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.8A
Rds On (Typ): -
Input Type: Inverting
Features: -
Fault Protection: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 16-SOP

pacote: 16-SOIC (0.173", 4.40mm Width)

Estoque52.590

TB6562AFG,8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 30SSOP

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: DMOS
Step Resolution: 1, 1/2, 1/4
Applications: General Purpose
Current - Output: 1.5A
Voltage - Supply: 10 V ~ 34 V
Voltage - Load: 10 V ~ 34 V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 30-BSOP (0.295", 7.50mm Width)
Supplier Device Package: 30-SSOP

pacote: 30-BSOP (0.295", 7.50mm Width)

Estoque138.510

TB6612FNG,C,8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 24SSOP

Motor Type - Stepper: -
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: -
Applications: General Purpose
Current - Output: 1A
Voltage - Supply: 2.7 V ~ 5.5 V
Voltage - Load: 2.5 V ~ 13.5 V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Supplier Device Package: 24-SSOP

pacote: 24-LSSOP (0.220", 5.60mm Width)

Estoque238.842

TC74HC32AF(EL,F)

Toshiba Semiconductor and Storage

IC GATE OR 4CH 2-INP 14SOP

Logic Type: OR Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 5.2mA, 5.2mA
Logic Level - Low: 0.5 V ~ 1.8 V
Logic Level - High: 1.5 V ~ 4.2 V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-SOP
Package / Case: 14-SOIC (0.209", 5.30mm Width)

pacote: 14-SOIC (0.209", 5.30mm Width)

Estoque22.200

TC74VHC125FTELM

Toshiba Semiconductor and Storage

IC BUS BUFFER QUAD N-INV 14TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP

pacote: 14-TSSOP (0.173", 4.40mm Width)

Estoque5.328

TC74HC4051AF(EL,F)

Toshiba Semiconductor and Storage

IC MUX/DEMUX 8:1 100 OHM SOP16

Switch Circuit: -
Multiplexer/Demultiplexer Circuit: 8:1
Number of Circuits: 1
On-State Resistance (Max): 100 Ohm
Channel-to-Channel Matching (ΔRon): 5 Ohm
Voltage - Supply, Single (V+): 2 V ~ 6 V
Voltage - Supply, Dual (V±): ±2 V ~ 6 V
Switch Time (Ton, Toff) (Max): 18ns, 29ns
-3db Bandwidth: 85MHz
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): 2pF, 70pF
Current - Leakage (IS(off)) (Max): 100nA
Crosstalk: -50dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 16-SOP

pacote: 16-SOIC (0.209", 5.30mm Width)

Estoque22.800

TL1L4-NW1,L

Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 5000K 2SMD

Color: White, Cool
CCT (K): 5000K
Flux @ 85°C, Current - Test: 135 lm (120 lm ~ 150 lm)
Flux @ 25°C, Current - Test: -
Current - Test: 350mA
Voltage - Forward (Vf) (Typ): 2.8V
Lumens/Watt @ Current - Test: 138 lm/W
CRI (Color Rendering Index): 80
Current - Max: 1.5A
Viewing Angle: 120°
Mounting Type: Surface Mount
Package / Case: 1414 (3535 Metric)
Supplier Device Package: 3535
Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
Height - Seated (Max): 0.085" (2.15mm)

pacote: 1414 (3535 Metric)

Estoque5.382

TL1L3-DW0,L

Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 6500K 2SMD

Color: White, Cool
CCT (K): 6500K
Flux @ 85°C, Current - Test: -
Flux @ 25°C, Current - Test: 145 lm (Typ)
Current - Test: 350mA
Voltage - Forward (Vf) (Typ): 2.85V
Lumens/Watt @ Current - Test: 145 lm/W
CRI (Color Rendering Index): 70
Current - Max: 1A
Viewing Angle: 100°
Mounting Type: Surface Mount
Package / Case: 1414 (3535 Metric)
Supplier Device Package: 3535
Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
Height - Seated (Max): 0.099" (2.52mm)

pacote: 1414 (3535 Metric)

Estoque4.590

TLP5214(D4,E

Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRIVER 16SO

Technology: Optical Coupling
Number of Channels: 1
Voltage - Isolation: 5000Vrms
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Rise / Fall Time (Typ): 32ns, 18ns
Current - Output High, Low: 3A, 3A
Current - Peak Output: 4A
Voltage - Forward (Vf) (Typ): 1.7V (Max)
Current - DC Forward (If) (Max): 25mA
Voltage - Supply: 15 V ~ 30 V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SO
Approvals: CQC, CSA, cUL, UL, VDE

pacote: 16-SOIC (0.295", 7.50mm Width)

Estoque6.072

TLP701H(F)

Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRIVER 6SDIP GW

Technology: Optical Coupling
Number of Channels: 1
Voltage - Isolation: 5000Vrms
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Rise / Fall Time (Typ): 50ns, 50ns
Current - Output High, Low: 400mA, 400mA
Current - Peak Output: 600mA
Voltage - Forward (Vf) (Typ): 1.57V
Current - DC Forward (If) (Max): 25mA
Voltage - Supply: 10 V ~ 30 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Supplier Device Package: 6-SDIP Gull Wing
Approvals: cUL, UL

pacote: 6-SOIC (0.268", 6.80mm Width)

Estoque9.564

TCR3RM285A-LF-SE

Toshiba Semiconductor and Storage

LDO REG 2.85V 300MA 4DFNC

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.85V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.15V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): 12 µA
Current - Supply (Max): -
PSRR: -
Control Features: Current Limit, Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XDFN Exposed Pad
Supplier Device Package: 4-DFNC (1x1)

pacote: -

Estoque26.730

TK40S06N1L-LXHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 40A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 88.2W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacote: -

Estoque2.928

RN2910-LF-CT

Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR4.7KOHM Q1BERINF.

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-61AA
Supplier Device Package: SMQ

pacote: -

Estoque9.000

2SC5108-Y-LF

Toshiba Semiconductor and Storage

RF TRANS NPN 10V 6GHZ SSM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): -
Gain: 11dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

pacote: -

Request a Quote

TCR2EN11-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=1.1V IOUT=200MA

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.1V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.65V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 60 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

pacote: -

Estoque30.000

SSM3J168F-LF

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 400MA S-MINI

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
Vgs (Max): +20V, -16V
FET Feature: -
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

pacote: -

Estoque51.261

TPCP8J01-TE85L-F-M

Toshiba Semiconductor and Storage

MOSFET P-CH 32V 5.5A PS-8

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 32 V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.14W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PS-8
Package / Case: 8-SMD, Flat Lead

pacote: -

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TC7MBL3125CFT-QCEL

Toshiba Semiconductor and Storage

PB-F CMOS BUS SWITCHES (SINGLE P

Type: Bus Switch
Circuit: 4 x 1:1
Independent Circuits: 1
Current - Output High, Low: -
Voltage Supply Source: Single Supply
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP

pacote: -

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