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Toshiba Semiconductor and Storage Produtos

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Página  33/163
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RN2108CT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.05W CST3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 50mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
pacote: SC-101, SOT-883
Estoque2.304
2SC5086-Y,LF
Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SSM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 500MHz
  • Gain: -
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
pacote: SC-75, SOT-416
Estoque5.008
HN1B04FU-Y(T5L,F,T
Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A US6

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
pacote: 6-TSSOP, SC-88, SOT-363
Estoque7.728
RN2911(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
pacote: 6-TSSOP, SC-88, SOT-363
Estoque3.440
RN2902,LF(CT
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
pacote: 6-TSSOP, SC-88, SOT-363
Estoque46.284
hot CRG02(TE85L,Q,M)
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 700MA SFLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 700mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 700mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacote: SOD-123F
Estoque36.000
TAR5SB30(TE85L,F)
Toshiba Semiconductor and Storage

IC REG LINEAR 3V 200MA SMV

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 15V
  • Voltage - Output (Min/Fixed): 3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.2V @ 50mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 850µA
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
pacote: SC-74A, SOT-753
Estoque4.240
TBD62003AFNG,EL
Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.5A 16SSOP

  • Switch Type: General Purpose
  • Number of Outputs: 7
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 50V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 2.8A
  • Rds On (Typ): -
  • Input Type: Inverting
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-LSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-SSOP
pacote: 16-LSSOP (0.173", 4.40mm Width)
Estoque15.816
TCK22892G,LF
Toshiba Semiconductor and Storage

IC PWR SWITCH P-CHAN 1:1 WCSP6E

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: P-Channel
  • Interface: On/Off
  • Voltage - Load: 1.4 V ~ 5.5 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 740mA
  • Rds On (Typ): 31 mOhm
  • Input Type: Non-Inverting
  • Features: Load Discharge
  • Fault Protection: Current Limiting (Fixed), Over Temperature
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 6-UFBGA, WLCSP
  • Supplier Device Package: 6-WCSPE (0.80x1.2)
pacote: 6-UFBGA, WLCSP
Estoque49.446
TB6600HG
Toshiba Semiconductor and Storage

IC MOTOR DRIVER BIPOLAR 25HZIP

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: -
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: Parallel
  • Technology: Power MOSFET
  • Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
  • Applications: General Purpose
  • Current - Output: 4.5A
  • Voltage - Supply: 8 V ~ 42 V
  • Voltage - Load: 8 V ~ 42 V
  • Operating Temperature: -30°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 25-SIP, Formed Leads
  • Supplier Device Package: 25-HZIP
pacote: 25-SIP, Formed Leads
Estoque5.888
TC7MB3125CFK-EL(M)
Toshiba Semiconductor and Storage

IC BUS SWITCH LOCAP QUAD 14VSSOP

  • Type: Bus Switch
  • Circuit: 1 x 1:1
  • Independent Circuits: 4
  • Current - Output High, Low: -
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 4 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 14-VFSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 14-VSSOP, US14
pacote: 14-VFSOP (0.118", 3.00mm Width)
Estoque6.640
74HC164D(BJ)
Toshiba Semiconductor and Storage

IC SHIFT REGISTER 8BIT 14SOP

  • Logic Type: Shift Register
  • Output Type: Push-Pull
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Function: Serial to Parallel
  • Voltage - Supply: 2 V ~ 6 V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOP
pacote: 14-SOIC (0.154", 3.90mm Width)
Estoque21.552
hot 74VHC14FT
Toshiba Semiconductor and Storage

IC INV HEX SCHMITT TRIG 14TSSOP

  • Logic Type: Inverter
  • Number of Circuits: 6
  • Number of Inputs: 6
  • Features: Schmitt Trigger
  • Voltage - Supply: 2 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.9 V ~ 1.65 V
  • Logic Level - High: 2.2 V ~ 3.85 V
  • Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-TSSOP
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
pacote: 14-TSSOP (0.173", 4.40mm Width)
Estoque18.012
TC7SH00F,LJ(CT
Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP SMV

  • Logic Type: NAND Gate
  • Number of Circuits: 1
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.5V
  • Logic Level - High: 1.5V
  • Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMV
  • Package / Case: SC-74A, SOT-753
pacote: SC-74A, SOT-753
Estoque45.378
TD62083AFG,N
Toshiba Semiconductor and Storage

IC DRIVER DARL SINK 8CHAN 18SOP

  • Type: Driver
  • Protocol: -
  • Number of Drivers/Receivers: 8/0
  • Duplex: -
  • Receiver Hysteresis: -
  • Data Rate: -
  • Voltage - Supply: 5V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 18-SOIC (0.276", 7.00mm Width)
  • Supplier Device Package: 18-SOP
pacote: 18-SOIC (0.276", 7.00mm Width)
Estoque2.336
74HCT4053D(BJ)
Toshiba Semiconductor and Storage

IC SERIES TRIPLE 2-CHANNEL

  • Switch Circuit: -
  • Multiplexer/Demultiplexer Circuit: -
  • Number of Circuits: -
  • On-State Resistance (Max): -
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): -
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): -
  • -3db Bandwidth: -
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): -
  • Current - Leakage (IS(off)) (Max): -
  • Crosstalk: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque42.342
TLP222G-2(F)
Toshiba Semiconductor and Storage

PHOTOCOUPLER PHOTORELAY 8-DIP

  • Circuit: DPST (2 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 50 Ohm
  • Load Current: 120mA
  • Voltage - Input: 1.15VDC
  • Voltage - Load: 0 ~ 350 V
  • Mounting Type: Through Hole
  • Termination Style: PC Pin
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
  • Relay Type: Relay
pacote: 8-DIP (0.300", 7.62mm)
Estoque6.156
TLP184(Y-TPL,SE
Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 50% @ 5mA
  • Current Transfer Ratio (Max): 150% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 110°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (4 Leads), Gull Wing
  • Supplier Device Package: 6-SO, 4 Lead
pacote: 6-SMD (4 Leads), Gull Wing
Estoque8.856
TLP250(TP1,F)
Toshiba Semiconductor and Storage

OPTOISO 2.5KV GATE DRIVER 8SMD

  • Technology: Optical Coupling
  • Number of Channels: 1
  • Voltage - Isolation: 2500Vrms
  • Common Mode Transient Immunity (Min): 5kV/µs
  • Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
  • Pulse Width Distortion (Max): -
  • Rise / Fall Time (Typ): -
  • Current - Output High, Low: 500mA, 500mA
  • Current - Peak Output: 1.5A
  • Voltage - Forward (Vf) (Typ): 1.6V
  • Current - DC Forward (If) (Max): 20mA
  • Voltage - Supply: 15 V ~ 30 V
  • Operating Temperature: -20°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Gull Wing
  • Supplier Device Package: 8-SMD
  • Approvals: UR
pacote: 8-SMD, Gull Wing
Estoque95.598
74VHC240FT
Toshiba Semiconductor and Storage

IC BUFFER INVERT 5.5V 20TSSOP

  • Logic Type: Buffer, Inverting
  • Number of Elements: 2
  • Number of Bits per Element: 4
  • Input Type: -
  • Output Type: 3-State
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 2 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 20-TSSOP
pacote: 20-TSSOP (0.173", 4.40mm Width)
Estoque2.848
TC74VHC32FK(EL,K)
Toshiba Semiconductor and Storage

X34 OR GATE VCC: 2-5.5V

  • Logic Type: OR Gate
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2V ~ 5.5V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.1V ~ 36V
  • Logic Level - High: 2V ~ 4.5V
  • Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-VSSOP
  • Package / Case: 14-VFSOP (0.118", 3.00mm Width)
pacote: 14-VFSOP (0.118", 3.00mm Width)
Estoque20.154
TCR15AG10,LF
Toshiba Semiconductor and Storage

1500MA LDO VOUT1.0V DROPOUT120MV

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: -
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: -
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque3.168
TMPM4G9F15FG(DBB)
Toshiba Semiconductor and Storage

TXZ FAMILY MCU

  • Core Processor: ARM® Cortex®-M4F
  • Core Size: 32-Bit
  • Speed: 160MHz
  • Connectivity: CEC, EBI/EMI, I²C, IrDA, SIO, SPI, SMIF, UART/USART
  • Peripherals: DMA, LVD, POR, WDT
  • Number of I/O: 150
  • Program Memory Size: 1.5MB (1.5M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 32K x 8
  • RAM Size: 192K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
  • Data Converters: A/D 24x12b; D/A 2x8b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-LQFP (14x14)
pacote: 100-LQFP
Estoque7.360
TPH2R805PL-LQ
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 830mW (Ta), 116W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
pacote: -
Estoque8.940
RN4911-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q TR PNP+NPN BRT Q1BSR=

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz, 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
pacote: -
Estoque18.000
TRS2E65F-S1Q
Toshiba Semiconductor and Storage

DIODE SIL CARB 650V 2A TO220-2L

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 650 V
  • Capacitance @ Vr, F: 8.7pF @ 650V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: 175°C (Max)
pacote: -
Request a Quote
TCR3DM105-LF-SE
Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.05V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.75V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-UDFN Exposed Pad
  • Supplier Device Package: 4-DFN (1x1)
pacote: -
Estoque29.484
XPN12006NC-L1XHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 20A 8TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
  • Package / Case: 8-PowerVDFN
pacote: -
Estoque29.856