Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 6A TSM
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque6.656 |
|
MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 10.1nC @ 10V | 450pF @ 15V | ±20V | - | 700mW (Ta) | 27.6 mOhm @ 4A, 10V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 5.2A TSM
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque2.192 |
|
MOSFET (Metal Oxide) | 20V | 5.2A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 8.1nC @ 4.5V | 640pF @ 10V | ±8V | - | 700mW (Ta) | 46 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4.6A UFM
|
pacote: 3-SMD, Flat Leads |
Estoque144.000 |
|
MOSFET (Metal Oxide) | 20V | 4.6A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 8.1nC @ 4.5V | 640pF @ 10V | ±8V | - | 500mW (Ta) | 46 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 18A SOP8 2-6J1B
|
pacote: 8-SOIC (0.173", 4.40mm Width) |
Estoque6.768 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 82nC @ 10V | 7800pF @ 10V | ±20V | - | 1W (Ta) | 3.2 mOhm @ 9A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A PS-8
|
pacote: 8-SMD, Flat Lead |
Estoque4.048 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 20nC @ 10V | 2150pF @ 10V | ±20V | - | 840mW (Ta) | 12.9 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | PS-8 (2.9x2.4) | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 18A 8-SOP
|
pacote: 8-SOIC (0.173", 4.40mm Width) |
Estoque2.368 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 56nC @ 10V | 2900pF @ 10V | ±20V | - | 1W (Ta) | 3.4 mOhm @ 9A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 2.2A PS-8
|
pacote: 8-SMD, Flat Lead |
Estoque3.984 |
|
MOSFET (Metal Oxide) | 100V | 2.2A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 7.5nC @ 10V | 360pF @ 10V | ±20V | - | 840mW (Ta) | 180 mOhm @ 1.1A, 10V | 150°C (TJ) | Surface Mount | PS-8 (2.9x2.4) | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 44A 8SOP ADV
|
pacote: 8-PowerVDFN |
Estoque5.376 |
|
MOSFET (Metal Oxide) | 30V | 44A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 59nC @ 10V | 5700pF @ 10V | ±20V | - | - | 3.2 mOhm @ 22A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 34A 8SOP ADV
|
pacote: 8-PowerVDFN |
Estoque6.848 |
|
MOSFET (Metal Oxide) | 30V | 34A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 36nC @ 10V | 3430pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 5.3 mOhm @ 17A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 38A 8SOIC ADV
|
pacote: 8-PowerVDFN |
Estoque2.544 |
|
MOSFET (Metal Oxide) | 30V | 38A (Ta) | 4.5V, 10V | 2.3V @ 500µA | 50nC @ 10V | 4600pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 4.2 mOhm @ 19A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 40A 8SOIC ADV
|
pacote: 8-PowerVDFN |
Estoque6.928 |
|
MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 49nC @ 10V | 2200pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 3.5 mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 18A 8-SOIC
|
pacote: 8-SOIC (0.173", 4.40mm Width) |
Estoque3.424 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 49nC @ 10V | 4600pF @ 10V | ±20V | - | 1W (Ta) | 4.5 mOhm @ 9A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 13A 8-SOIC
|
pacote: 8-SOIC (0.173", 4.40mm Width) |
Estoque7.840 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 42nC @ 10V | 1800pF @ 10V | ±20V | - | 1W (Ta) | 6.6 mOhm @ 6.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 4.5A PW-MOLD2
|
pacote: TO-251-3 Stub Leads, IPak |
Estoque3.040 |
|
MOSFET (Metal Oxide) | 250V | 4.5A (Ta) | 10V | 3.5V @ 1mA | 10nC @ 10V | 440pF @ 10V | ±20V | - | 20W (Tc) | 1 Ohm @ 2.5A, 10V | 150°C (TJ) | Through Hole | PW-MOLD2 | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 5A PW-MOLD2
|
pacote: TO-251-3 Stub Leads, IPak |
Estoque7.456 |
|
MOSFET (Metal Oxide) | 60V | 5A (Ta) | 4V, 10V | 2.5V @ 1mA | 15nC @ 10V | 730pF @ 10V | ±20V | - | 20W (Tc) | 100 mOhm @ 2.5A, 10V | 150°C (TJ) | Through Hole | PW-MOLD2 | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 13A TO220SIS
|
pacote: TO-220-3 Full Pack |
Estoque3.456 |
|
MOSFET (Metal Oxide) | 600V | 13A (Ta) | 10V | 4V @ 1mA | 62nC @ 10V | 3100pF @ 25V | ±30V | - | 50W (Tc) | 500 mOhm @ 6.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-3PN
|
pacote: TO-3P-3, SC-65-3 |
Estoque3.584 |
|
MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 4V @ 1mA | 60nC @ 10V | 4250pF @ 25V | ±30V | - | 150W (Tc) | 330 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 5A TO220SIS
|
pacote: TO-220-3 Full Pack |
Estoque4.256 |
|
MOSFET (Metal Oxide) | 500V | 5A (Ta) | 10V | 4V @ 1mA | 16nC @ 10V | 550pF @ 25V | ±30V | - | 35W (Tc) | 1.7 Ohm @ 2.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 45A TO220NIS
|
pacote: TO-220-3 Full Pack |
Estoque77.400 |
|
MOSFET (Metal Oxide) | 60V | 45A (Ta) | 10V | 4V @ 1mA | 196nC @ 10V | 12400pF @ 10V | ±20V | - | 45W (Tc) | 5.8 mOhm @ 23A, 10V | 150°C (TJ) | Through Hole | TO-220NIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 35A TO220NIS
|
pacote: TO-220-3 Full Pack |
Estoque3.408 |
|
MOSFET (Metal Oxide) | 60V | 35A (Ta) | 4V, 10V | 2.5V @ 1mA | 91nC @ 10V | 5120pF @ 10V | ±20V | - | 35W (Tc) | 12.5 mOhm @ 18A, 10V | 150°C (TJ) | Through Hole | TO-220NIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 5A SC-97
|
pacote: SC-97 |
Estoque5.344 |
|
MOSFET (Metal Oxide) | 500V | 5A (Ta) | 10V | 4V @ 1mA | 17nC @ 10V | 780pF @ 10V | ±30V | - | 50W (Tc) | 1.5 Ohm @ 5A, 10V | 150°C (TJ) | Surface Mount | TFP (9.2x10.7) | SC-97 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 3A PW-MOLD
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque13.224 |
|
MOSFET (Metal Oxide) | 250V | 3A (Ta) | 10V | 3.5V @ 1mA | 12nC @ 10V | 267pF @ 10V | ±20V | - | 20W (Tc) | 1.7 Ohm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | PW-MOLD | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 13A TO220FL
|
pacote: TO-220-3, Short Tab |
Estoque3.616 |
|
MOSFET (Metal Oxide) | 450V | 13A (Ta) | 10V | 5V @ 1mA | 34nC @ 10V | 1600pF @ 25V | ±30V | - | 100W (Tc) | 400 mOhm @ 6A, 10V | 150°C (TJ) | Through Hole | TO-220FL | TO-220-3, Short Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 20A SC-97
|
pacote: SC-97 |
Estoque5.712 |
|
MOSFET (Metal Oxide) | 250V | 20A (Ta) | 10V | 3.5V @ 1mA | 100nC @ 10V | 4000pF @ 10V | ±20V | - | 125W (Tc) | 105 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | TFP (9.2x10.7) | SC-97 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 4.5A PW-MOLD
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque3.984 |
|
MOSFET (Metal Oxide) | 250V | 4.5A (Ta) | 10V | 3.5V @ 1mA | 10nC @ 10V | 440pF @ 10V | ±20V | - | 20W (Tc) | 1 Ohm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | PW-MOLD | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 12A TO220NIS
|
pacote: TO-220-3 Full Pack |
Estoque3.392 |
|
MOSFET (Metal Oxide) | 500V | 12A (Ta) | 10V | 4V @ 1mA | 45nC @ 10V | 2040pF @ 10V | ±30V | - | 40W (Tc) | 620 mOhm @ 6A, 10V | 150°C (TJ) | Through Hole | TO-220NIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 3A TO220SM
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque4.432 |
|
MOSFET (Metal Oxide) | 800V | 3A (Ta) | 10V | 4V @ 1mA | 25nC @ 10V | 750pF @ 25V | ±30V | - | 75W (Tc) | 3.6 Ohm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | TO-220SM | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 10A TO-220AB
|
pacote: TO-220-3 |
Estoque3.728 |
|
MOSFET (Metal Oxide) | 600V | 10A (Ta) | 10V | 4V @ 1mA | 45nC @ 10V | 2040pF @ 10V | ±30V | - | 125W (Tc) | 750 mOhm @ 5A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |