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Toshiba Semiconductor and Storage Produtos - Transistores - FET, MOSFET - Arranjos

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Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TPCF8402(TE85L,F,M
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 4A/3.2A VS-8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3.2A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
  • Power - Max: 330mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: VS-8 (2.9x1.5)
pacote: 8-SMD, Flat Lead
Estoque4.704
Logic Level Gate
30V
4A, 3.2A
50 mOhm @ 2A, 10V
2V @ 1mA
10nC @ 10V
470pF @ 10V
330mW
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
VS-8 (2.9x1.5)
TPCF8201(TE85L,F,M
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 3A VS-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 49 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
  • Power - Max: 330mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: VS-8 (2.9x1.5)
pacote: 8-SMD, Flat Lead
Estoque6.416
Logic Level Gate
20V
3A
49 mOhm @ 1.5A, 4.5V
1.2V @ 200µA
7.5nC @ 5V
590pF @ 10V
330mW
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
VS-8 (2.9x1.5)
TPC8207(TE12L,Q)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 6A 8-SOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 4.8A, 4V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (5.5x6.0)
pacote: 8-SOIC (0.173", 4.40mm Width)
Estoque2.704
Logic Level Gate
20V
6A
20 mOhm @ 4.8A, 4V
1.2V @ 200µA
22nC @ 5V
2010pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)
TPC8408,LQ(S
Toshiba Semiconductor and Storage

MOSFET N/P-CH 40V 6.1A/5.3A 8SOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque5.904
Logic Level Gate
40V
6.1A, 5.3A
32 mOhm @ 3.1A, 10V
2.3V @ 100µA
24nC @ 10V
850pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
TPC8407,LQ(S
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 9A/7.4A 8SOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A, 7.4A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque7.168
Logic Level Gate
30V
9A, 7.4A
17 mOhm @ 4.5A, 10V
2.3V @ 100µA
17nC @ 10V
1190pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
TPC8223-H,LQ(S
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 9A 8SOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque5.968
Logic Level Gate
30V
9A
17 mOhm @ 4.5A, 10V
2.3V @ 100µA
17nC @ 10V
1190pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SSM6L39TU,LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.8A UF6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA
  • Rds On (Max) @ Id, Vgs: 143 mOhm @ 600MA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
pacote: 6-SMD, Flat Leads
Estoque2.256
Logic Level Gate, 1.8V Drive
20V
800mA
143 mOhm @ 600MA, 4V
1V @ 1mA
-
268pF @ 10V
500mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
UF6
SSM6N55NU,LF(T
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A UDFN6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-µDFN(2x2)
pacote: 6-WDFN Exposed Pad
Estoque7.536
Logic Level Gate
30V
4A
46 mOhm @ 4A, 10V
2.5V @ 100µA
2.5nC @ 4.5V
280pF @ 15V
1W
150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-µDFN(2x2)
SSM6N7002BFU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.2A US6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 3.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
pacote: 6-TSSOP, SC-88, SOT-363
Estoque3.248
Logic Level Gate
60V
200mA
2.1 Ohm @ 500mA, 10V
3.1V @ 250µA
-
17pF @ 25V
300mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6P36FE,LM
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.33A ES6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 330mA
  • Rds On (Max) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
pacote: SOT-563, SOT-666
Estoque2.400
Logic Level Gate
20V
330mA
1.31 Ohm @ 100mA, 4.5V
1V @ 1mA
1.2nC @ 4V
43pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
SSM6N36FE,LM
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.5A ES6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
pacote: SOT-563, SOT-666
Estoque4.064
Logic Level Gate
20V
500mA
630 mOhm @ 200mA, 5V
1V @ 1mA
1.23nC @ 4V
46pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
SSM6P35FE,LM
Toshiba Semiconductor and Storage

MOSFET 2NCH 20V 100MA ES6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
pacote: SOT-563, SOT-666
Estoque5.536
Standard
20V
100mA
8 Ohm @ 50mA, 4V
1V @ 1mA
-
12.2pF @ 3V
150mW
150°C
Surface Mount
SOT-563, SOT-666
ES6
SSM6N37FE,LM(T
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.25A 2-2N1D

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
pacote: SOT-563, SOT-666
Estoque3.264
Logic Level Gate
20V
250mA
2.2 Ohm @ 100mA, 4.5V
1V @ 1mA
-
12pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
SSM6L09FUTE85LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 0.4A/0.2A US6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 200MA, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
  • Power - Max: 300mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
pacote: 6-TSSOP, SC-88, SOT-363
Estoque3.728
Logic Level Gate
30V
400mA, 200mA
700 mOhm @ 200MA, 10V
1.8V @ 100µA
-
20pF @ 5V
300mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6L35FU(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.18A/0.1A US6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
  • Power - Max: 200mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
pacote: 6-TSSOP, SC-88, SOT-363
Estoque7.968
Logic Level Gate, 1.2V Drive
20V
180mA, 100mA
3 Ohm @ 50mA, 4V
1V @ 1mA
-
9.5pF @ 3V
200mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6N16FUTE85LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.1A US6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
  • Power - Max: 200mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
pacote: 6-TSSOP, SC-88, SOT-363
Estoque3.088
Standard
20V
100mA
3 Ohm @ 10mA, 4V
1.1V @ 100µA
-
9.3pF @ 3V
200mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.3A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 300mA
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
  • Power - Max: 285mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
pacote: 6-TSSOP, SC-88, SOT-363
Estoque3.024
Standard
60V
300mA
1.5 Ohm @ 100mA, 10V
2.1V @ 250µA
0.6nC @ 4.5V
40pF @ 10V
285mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6P41FE(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.72A ES6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 720mA
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
pacote: SOT-563, SOT-666
Estoque7.456
Logic Level Gate
20V
720mA
300 mOhm @ 400mA, 4.5V
1V @ 1mA
1.76nC @ 4.5V
110pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
SSM6N15AFE,LM
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A ES6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 7.8pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
pacote: SOT-563, SOT-666
Estoque3.696
Logic Level Gate
30V
100mA
4 Ohm @ 10mA, 4V
1.5V @ 100µA
-
7.8pF @ 3V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
SSM6L16FETE85LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.18A/0.1A ES6

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 0.1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
pacote: SOT-563, SOT-666
Estoque3.408
Standard
20V
100mA
3 Ohm @ 10mA, 4V
1.1V @ 0.1mA
-
9.3pF @ 3V
150mW
150°C (TA)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
SSM6N15AFU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A 2-2J1C

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
  • Power - Max: 300mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
pacote: 6-TSSOP, SC-88, SOT-363
Estoque3.280
Logic Level Gate
30V
100mA
3.6 Ohm @ 10mA, 4V
1.5V @ 100µA
-
13.5pF @ 3V
300mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
hot SSM6N7002BFE,LM
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.2A ES6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 3.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
pacote: SOT-563, SOT-666
Estoque14.760.000
Logic Level Gate
60V
200mA
2.1 Ohm @ 500mA, 10V
3.1V @ 250µA
-
17pF @ 25V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
SSM6P35FE(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.1A ES6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
pacote: SOT-563, SOT-666
Estoque32.976
Logic Level Gate
20V
100mA
8 Ohm @ 50mA, 4V
1V @ 1mA
-
12.2pF @ 3V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
SSM6N61NU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 4A UDFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-UDFNB (2x2)
pacote: 6-WDFN Exposed Pad
Estoque22.290
Logic Level Gate, 1.5V Drive
20V
4A
33 mOhm @ 4A, 4.5V
1V @ 1mA
3.6nC @ 4.5V
410pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-UDFNB (2x2)
SSM6L61NU,LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 4A UDFN6

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (2x2)
pacote: 6-WDFN Exposed Pad
Estoque23.022
Standard
20V
4A
-
-
-
-
-
-
Surface Mount
6-WDFN Exposed Pad
6-UDFN (2x2)
SSM6N37FU,LF
Toshiba Semiconductor and Storage

MOSFET ARRAY 2N-CH 20V 250MA US6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
pacote: 6-TSSOP, SC-88, SOT-363
Estoque25.446
Logic Level Gate, 1.5V Drive
20V
250mA (Ta)
2.2 Ohm @ 100mA, 4.5V
1V @ 1mA
-
12pF @ 10V
300mW
150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6N7002CFU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.17A US6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 170mA
  • Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
  • Power - Max: 285mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
pacote: 6-TSSOP, SC-88, SOT-363
Estoque58.848
Standard
60V
170mA
3.9 Ohm @ 100mA, 10V
2.1V @ 250µA
0.35nC @ 4.5V
17pF @ 10V
285mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6P47NU,LF(T
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 4A 2-2Y1A

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (2x2)
pacote: 6-WDFN Exposed Pad
Estoque26.646
Logic Level Gate
20V
4A
95 mOhm @ 1.5A, 4.5V
1V @ 1mA
4.6nC @ 4.5V
290pF @ 10V
1W
150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-UDFN (2x2)