Página 9 - Toshiba Semiconductor and Storage Produtos - Transistores - Bipolares (BJT) - Simples | Heisener Electronics
Fale conosco
SalesDept@heisener.com +86-755-83210135-818
Login/Registrar
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrinho 0

Toshiba Semiconductor and Storage Produtos - Transistores - Bipolares (BJT) - Simples

Registros 441
Página  9/16
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SA1930,Q(J
Toshiba Semiconductor and Storage

TRANS PNP 2A 180V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 180V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque6.592
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1930,ONKQ(J
Toshiba Semiconductor and Storage

TRANS PNP 2A 180V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 180V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque7.632
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1930,LBS2DIAQ(J
Toshiba Semiconductor and Storage

TRANS PNP 2A 180V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 180V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque2.480
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1930,CKQ(J
Toshiba Semiconductor and Storage

TRANS PNP 2A 180V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 180V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque5.984
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1930(ONK,Q,M)
Toshiba Semiconductor and Storage

TRANS PNP 2A 180V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 180V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque5.216
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1930(LBS2MATQ,M
Toshiba Semiconductor and Storage

TRANS PNP 2A 180V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 180V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque6.080
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1869-Y,Q(J
Toshiba Semiconductor and Storage

TRANS PNP 3A 50V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 10W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque3.248
3A
50V
600mV @ 200mA, 2A
1µA (ICBO)
70 @ 500mA, 2V
10W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1869-Y,MTSAQ(J
Toshiba Semiconductor and Storage

TRANS PNP 3A 50V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 10W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque5.872
3A
50V
600mV @ 200mA, 2A
1µA (ICBO)
70 @ 500mA, 2V
10W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1869-Y(Q,M)
Toshiba Semiconductor and Storage

TRANS PNP 3A 50V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 10W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque5.808
3A
50V
600mV @ 200mA, 2A
1µA (ICBO)
70 @ 500mA, 2V
10W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1869-Y(JKT,Q,M)
Toshiba Semiconductor and Storage

TRANS PNP 3A 50V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 10W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque4.688
3A
50V
600mV @ 200mA, 2A
1µA (ICBO)
70 @ 500mA, 2V
10W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1837,YHF(M
Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque4.960
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
70MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1837,YHF(J
Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque2.672
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
70MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1837,WNLF(J
Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque5.984
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
70MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1837,TOA1F(J
Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque4.256
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
70MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1837,S1CSF(J
Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque2.224
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
70MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1837,NSEIKIF(J
Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque3.552
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
70MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1837,HFEYHF(M
Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque2.832
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
70MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1837,HFEYHF(J
Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque3.200
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
70MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1837,HFEMBJF(J
Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque3.536
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
70MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1837,F(J
Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque2.544
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
70MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
hot 2SA1837(PAIO,F,M)
Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque9.264
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
70MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1837(LBSAN,F,M)
Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
pacote: TO-220-3 Full Pack
Estoque6.192
1A
230V
1.5V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
2W
70MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1761,T6F(M
Toshiba Semiconductor and Storage

TRANS PNP 3A 50V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
pacote: TO-226-3, TO-92-3 Long Body
Estoque7.424
3A
50V
500mV @ 75mA, 1.5A
100nA (ICBO)
120 @ 100mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA1761,T6F(J
Toshiba Semiconductor and Storage

TRANS PNP 3A 50V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
pacote: TO-226-3, TO-92-3 Long Body
Estoque3.152
3A
50V
500mV @ 75mA, 1.5A
100nA (ICBO)
120 @ 100mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA1761,F(J
Toshiba Semiconductor and Storage

TRANS PNP 3A 50V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
pacote: TO-226-3, TO-92-3 Long Body
Estoque4.816
3A
50V
500mV @ 75mA, 1.5A
100nA (ICBO)
120 @ 100mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA1680,T6SCMDF(J
Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
pacote: TO-226-3, TO-92-3 Long Body
Estoque3.872
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
120 @ 100mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA1680,T6F(J
Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
pacote: TO-226-3, TO-92-3 Long Body
Estoque6.944
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
120 @ 100mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA1680,T6ASTIF(J
Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
pacote: TO-226-3, TO-92-3 Long Body
Estoque6.256
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
120 @ 100mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD