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Toshiba Semiconductor and Storage Produtos - Transistores - Bipolares (BJT) - Simples

Registros 441
Página  2/16
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SA1943-O-S1-F
Toshiba Semiconductor and Storage

PB-F POWER TRANSISTOR TO-3PL PC=

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 15 A
  • Voltage - Collector Emitter Breakdown (Max): 230 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 150 W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PL
  • Supplier Device Package: TO-3P(L)
pacote: -
Estoque30
15 A
230 V
3V @ 800mA, 8A
5µA (ICBO)
80 @ 1A, 5V
150 W
30MHz
150°C (TJ)
Through Hole
TO-3PL
TO-3P(L)
2SA2097-TE16L1-NQ
Toshiba Semiconductor and Storage

TRANS PNP 50V 5A PW-MOLD

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 270mV @ 53mA, 1.6A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
pacote: -
Request a Quote
5 A
50 V
270mV @ 53mA, 1.6A
100nA (ICBO)
200 @ 500mA, 2V
1 W
-
150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PW-MOLD
TTC011B-Q-S
Toshiba Semiconductor and Storage

TRANSISTOR NPN BIPO TO126N

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
TTC011B-Q
Toshiba Semiconductor and Storage

PB-FPOWERTRANSISTORTO-126NPC=10W

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 230 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 200nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 1.5 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126N
pacote: -
Request a Quote
1 A
230 V
1.5V @ 50mA, 500mA
200nA (ICBO)
100 @ 100mA, 5V
1.5 W
100MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126N
2SC4738-GR-LXHF
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SSM

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 120 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
pacote: -
Estoque14.370
150 mA
50 V
250mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
120 mW
80MHz
-
Surface Mount
SC-75, SOT-416
SSM
TTC015B-Q
Toshiba Semiconductor and Storage

PB-F POWER TRANSISTOR TO-126N PC

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
  • Power - Max: 1.5 W
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126N
pacote: -
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2 A
80 V
500mV @ 100mA, 1A
100nA (ICBO)
100 @ 500mA, 2V
1.5 W
150MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126N
2SC6135-LF
Toshiba Semiconductor and Storage

TRANS NPN 50V 1A UFM

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 120mV @ 6mA, 300mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: UFM
pacote: -
Estoque123.648
1 A
50 V
120mV @ 6mA, 300mA
100nA (ICBO)
400 @ 100mA, 2V
500 mW
-
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
UFM
2SC6026MFV-Y-L3F
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A VESM

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 150 mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
pacote: -
Estoque48.078
150 mA
50 V
250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
150 mW
60MHz
150°C (TJ)
Surface Mount
SOT-723
VESM
2SC5819-TE12L-ZF
Toshiba Semiconductor and Storage

TRANS NPN 20V 1.5A PW-MINI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 20 V
  • Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 150mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PW-MINI
pacote: -
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1.5 A
20 V
120mV @ 10mA, 500mA
100nA (ICBO)
400 @ 150mA, 2V
1 W
-
150°C (TJ)
Surface Mount
TO-243AA
PW-MINI
TTA1713-GR-LF
Toshiba Semiconductor and Storage

TRANS PNP 45V 0.5A SMINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 1V
  • Power - Max: 200 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
pacote: -
Estoque8.583
500 mA
45 V
400mV @ 50mA, 500mA
100nA (ICBO)
180 @ 100mA, 1V
200 mW
80MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
2SC6026CT-GR-L3F
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.1A CST3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100 mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
pacote: -
Estoque68.700
100 mA
50 V
250mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
100 mW
60MHz
150°C (TJ)
Surface Mount
SC-101, SOT-883
CST3
2SA2059-TE12L-F
Toshiba Semiconductor and Storage

POWER TRANSISTOR PW-MINI PC=2.5W

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 20 V
  • Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PW-MINI
pacote: -
Estoque2.307
3 A
20 V
190mV @ 53mA, 1.6A
100nA (ICBO)
200 @ 500mA, 2V
1 W
-
150°C (TJ)
Surface Mount
TO-243AA
PW-MINI
2SA2056-TE85L-F
Toshiba Semiconductor and Storage

TRANS PNP 50V 2A TSM

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
  • Power - Max: 625 mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TSM
pacote: -
Estoque18.000
2 A
50 V
200mV @ 33mA, 1A
100nA (ICBO)
200 @ 300mA, 2V
625 mW
-
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TSM
2SA2154MFVGR-L3F
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A VESM

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 150 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
pacote: -
Estoque23.850
150 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
150 mW
80MHz
150°C (TJ)
Surface Mount
SOT-723
VESM
TTB1020B-S4X-S
Toshiba Semiconductor and Storage

TRANSISTOR PNP TO220

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SA1162-Y-LXHF
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SMINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 200 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
pacote: -
Estoque53.166
150 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
200 mW
80MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
2SC4116-Y-LXHF
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SC70

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 100 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
pacote: -
Estoque17.400
150 mA
50 V
250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
100 mW
80MHz
125°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70
2SA1586-GR-LXHF
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A USM

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 200 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
pacote: -
Estoque17.910
150 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
200 mW
80MHz
-
Surface Mount
SC-70, SOT-323
USM
2SA1987-O-Q
Toshiba Semiconductor and Storage

TRANS PNP 230V 15A TO3P

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 15 A
  • Voltage - Collector Emitter Breakdown (Max): 230 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 180 W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PL
  • Supplier Device Package: TO-3P(L)
pacote: -
Estoque270
15 A
230 V
3V @ 800mA, 8A
5µA (ICBO)
80 @ 1A, 5V
180 W
30MHz
150°C (TJ)
Through Hole
TO-3PL
TO-3P(L)
TTA1713-Y-LF
Toshiba Semiconductor and Storage

TRANS PNP 45V 0.5A SMINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
  • Power - Max: 200 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
pacote: -
Estoque9.000
500 mA
45 V
400mV @ 50mA, 500mA
100nA (ICBO)
120 @ 100mA, 1V
200 mW
80MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
2SC3303-Y-T6L1-NQ
Toshiba Semiconductor and Storage

TRANS NPN 80V 5A PW-MOLD

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
  • Power - Max: 1 W
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: PW-MOLD
pacote: -
Estoque3.054
5 A
80 V
400mV @ 150mA, 3A
1µA (ICBO)
120 @ 1A, 1V
1 W
120MHz
150°C (TJ)
Surface Mount
TO-251-3 Short Leads, IPak, TO-251AA
PW-MOLD
2SA2154MFV-Y-L3F
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A VESM

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 150 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
pacote: -
Estoque24.030
150 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
150 mW
80MHz
150°C (TJ)
Surface Mount
SOT-723
VESM
2SC5714-TE12L-ZF
Toshiba Semiconductor and Storage

TRANS NPN 20V 4A PW-MINI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 20 V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 32mA, 1.6A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PW-MINI
pacote: -
Request a Quote
4 A
20 V
150mV @ 32mA, 1.6A
100nA (ICBO)
400 @ 500mA, 2V
1 W
-
150°C (TJ)
Surface Mount
TO-243AA
PW-MINI
2SA2060-TE12L-ZF
Toshiba Semiconductor and Storage

TRANS PNP 50V 2A PW-MINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PW-MINI
pacote: -
Request a Quote
2 A
50 V
200mV @ 33mA, 1A
100nA (ICBO)
200 @ 300mA, 2V
1 W
-
150°C (TJ)
Surface Mount
TO-243AA
PW-MINI
TTA006B-Q
Toshiba Semiconductor and Storage

PB-F POWER TRANSISTOR TO-126N PC

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 230 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 200nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 1.5 W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126N
pacote: -
Estoque585
1 A
230 V
1.5V @ 50mA, 500mA
200nA (ICBO)
100 @ 100mA, 5V
1.5 W
70MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126N
2SC5198-O-S1-E
Toshiba Semiconductor and Storage

TRANS NPN 140V 10A TO3P

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 140 V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 700mA, 7A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
  • Power - Max: 100 W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
pacote: -
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10 A
140 V
2V @ 700mA, 7A
5µA (ICBO)
55 @ 1A, 5V
100 W
30MHz
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
2SC5354-XGQ-O
Toshiba Semiconductor and Storage

TRANSISTOR NPN TO-3PN

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
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2SC5886A-L1XHQ-O
Toshiba Semiconductor and Storage

TRANSISTOR NPN BIPO PWMOLD

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
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