Taiwan Semiconductor Corporation Produtos

BZD27C18PHR3G

Taiwan Semiconductor Corporation

DIODE, ZENER, 18V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 17.95V
• Tolerance: ±6.4%
• Power - Max: 1W
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 13V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacote: DO-219AB

BZD17C13P RFG

Taiwan Semiconductor Corporation

DIODE, ZENER, 13V, 800MW, %, SUB

• Voltage - Zener (Nom) (Vz): 13V
• Tolerance: ±6.53%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 10V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacote: DO-219AB

BZD17C68P MHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 68V, 800MW, %, SUB

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±5.88%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 51V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacote: DO-219AB

BZX84C2V7 RFG

Taiwan Semiconductor Corporation

DIODE, ZENER, 2.7V, 300MW, 5%, S

• Voltage - Zener (Nom) (Vz): 2.7V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 20µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

pacote: TO-236-3, SC-59, SOT-23-3

BZX79B13 A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 13V, 500MW, 2%, DO

• Voltage - Zener (Nom) (Vz): 13V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 8mA @ 100mV
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

pacote: DO-204AH, DO-35, Axial

BZT55C4V3 L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 4.3V, 500MW, 5%, Q

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 75 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: Mini MELF

pacote: SOD-80 Variant

GBPC3510M T0G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 35A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 35A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 4-Square, GBPC-M
• Supplier Device Package: GBPC-M

pacote: 4-Square, GBPC-M

TS25P01G C2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 25A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 50V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

pacote: 4-SIP, TS-6P

1SMB5943H

Taiwan Semiconductor Corporation

DIODE ZENER 56V 3W DO214AA

• Voltage - Zener (Nom) (Vz): 56 V
• Tolerance: ±5%
• Power - Max: 3 W
• Impedance (Max) (Zzt): 86 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 42.6 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

pacote: -

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BZY55B36

Taiwan Semiconductor Corporation

0805 (CERAMICS), 500MW, 2%, SMAL

• Voltage - Zener (Nom) (Vz): 36 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 27 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805

pacote: -

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TSD30H200CW

Taiwan Semiconductor Corporation

DIODE ARRAY SCHOT 30A TO263AB

• Diode Configuration: -
• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io) (per Diode): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature - Junction: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)

pacote: -

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TQL820CA14V50-RLG

Taiwan Semiconductor Corporation

200MA, LOW-IQ 40A LOW-DROPOUT RE

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 50V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.34V @ 200mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 77 µA
• Current - Supply (Max): -
• PSRR: 59dB (100Hz)
• Control Features: Enable, Reset, Watchdog
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP (0.173", 4.40mm Width) Exposed Pad
• Supplier Device Package: 14-TSSOP-EP

pacote: -

MBRF3080CTH

Taiwan Semiconductor Corporation

DIODE ARR SCHOT 80V 30A ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80 V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 80 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

pacote: -

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SBS24H

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 40V 2A ABS

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 40 V
• Current - Average Rectified (Io): 2 A
• Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
• Current - Reverse Leakage @ Vr: 100 µA @ 40 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: ABS

pacote: -

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TS25P07G-K-D2G

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 25A TS-6P

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 25 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
• Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

pacote: -

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1SMA5953H

Taiwan Semiconductor Corporation

DIODE ZENER 150V 1.5W DO214AC

• Voltage - Zener (Nom) (Vz): 150 V
• Tolerance: ±5%
• Power - Max: 1.5 W
• Impedance (Max) (Zzt): 600 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 114 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

pacote: -

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UG10G

Taiwan Semiconductor Corporation

25NS, 10A, 400V, ULTRA FAST RECO

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 175°C

pacote: -

1N5398G

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1.5A DO204AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

BZS55C16-RAG

Taiwan Semiconductor Corporation

DIODE ZENER 16V 500MW 1206

• Voltage - Zener (Nom) (Vz): 16 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 12 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206

pacote: -

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SKLWH

Taiwan Semiconductor Corporation

0.8A, 800V, STANDARD RECOVERY RE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 800mA
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 800 V
• Capacitance @ Vr, F: 7pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

TSF40H150C

Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 150V ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150 µA @ 150 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

pacote: -

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RS5D-T-M6G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 5A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: 57pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

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1N4005GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

MBRS25100CT

Taiwan Semiconductor Corporation

DIODE ARR SCHOT 100V 25A TO263AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io) (per Diode): 25A
• Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 100 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)

pacote: -

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SR302

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 3A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 20 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 125°C

pacote: -

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BZT52B75

Taiwan Semiconductor Corporation

SOD-123F, 500MW, 2%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 75 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 255 Ohms
• Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

pacote: -

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TSC966CW

Taiwan Semiconductor Corporation

SOT-223, 600V, 0.3A, NPN BIPOLAR

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 300 mA
• Voltage - Collector Emitter Breakdown (Max): 400 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 1µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
• Power - Max: 1 W
• Frequency - Transition: 50MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

pacote: -

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PU2BFSH

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 2A SOD128

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 100 V
• Capacitance @ Vr, F: 32pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD-128
• Operating Temperature - Junction: -55°C ~ 175°C

pacote: -