Taiwan Semiconductor Corporation Produtos

BZD27C47P RFG

Taiwan Semiconductor Corporation

DIODE, ZENER, 47V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 47V
• Tolerance: ±6.38%
• Power - Max: 1W
• Impedance (Max) (Zzt): 45 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 36V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacote: DO-219AB

BZD27C9V1P MTG

Taiwan Semiconductor Corporation

DIODE, ZENER, 9.1V, 1000MW, %, S

• Voltage - Zener (Nom) (Vz): 9.05V
• Tolerance: ±6.07%
• Power - Max: 1W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 5V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacote: DO-219AB

BZD27C33P MQG

Taiwan Semiconductor Corporation

DIODE, ZENER, 33V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±6.06%
• Power - Max: 1W
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 24V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacote: DO-219AB

BZD27C16P RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 16V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 16.2V
• Tolerance: ±5.55%
• Power - Max: 1W
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 12V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacote: DO-219AB

1SMB5953 M4G

Taiwan Semiconductor Corporation

DIODE, ZENER, 150V, 3000MW, 5%,

• Voltage - Zener (Nom) (Vz): 150V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 600 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 114V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

pacote: DO-214AA, SMB

1SMA4740HM2G

Taiwan Semiconductor Corporation

DIODE, ZENER, 10V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 7.6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

pacote: DO-214AC, SMA

BZD17C12P RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 12V, 800MW, %, SUB

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5.41%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

pacote: DO-219AB

BZT52B6V8-G RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 6.8V, 410MW, 2%, S

• Voltage - Zener (Nom) (Vz): 6.8V
• Tolerance: ±2%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 4V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

pacote: SOD-123

TS8P05G C2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 8A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

pacote: 4-SIP, TS-6P

DBL203GHC1G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 2A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
• Current - Reverse Leakage @ Vr: 2µA @ 200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Supplier Device Package: DBL

pacote: 4-DIP (0.300", 7.62mm)

DBLS208GHRDG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 2A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
• Current - Reverse Leakage @ Vr: 2µA @ 1200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: DBLS

pacote: 4-SMD, Gull Wing

1PGSMB5952HR5G

Taiwan Semiconductor Corporation

DIODE ZENER 130V 3W DO214AA

• Voltage - Zener (Nom) (Vz): 130 V
• Tolerance: ±5%
• Power - Max: 3 W
• Impedance (Max) (Zzt): 450 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 98.8 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

pacote: -

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T10JA07G-K

Taiwan Semiconductor Corporation

10A, 1000V, STANDARD BRIDGE RECT

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 10 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

pacote: -

SFS1604G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 16A TO263AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: 80pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)
• Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

TSM650N15CR

Taiwan Semiconductor Corporation

150V, 24A, SINGLE N-CHANNEL POWE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.6W (Ta), 96W (Tc)
• Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PDFN (5x6)
• Package / Case: 8-PowerTDFN

pacote: -

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BZT52C4V7K

Taiwan Semiconductor Corporation

SOD-523F, 200MW, 5%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 4.7 V
• Tolerance: ±5%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 2 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523F

pacote: -

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MUR305S

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 50 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 175°C

pacote: -

MBRF8150CT

Taiwan Semiconductor Corporation

DIODE ARR SCHOT 150V 8A ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io) (per Diode): 8A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 150 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

pacote: -

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BZX55B4V3

Taiwan Semiconductor Corporation

DO-35, 500MW, 2%, SMALL SIGNAL Z

• Voltage - Zener (Nom) (Vz): 4.3 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 75 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

pacote: -

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DBL105G

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 1A DBL

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600 V
• Current - Average Rectified (Io): 1 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Current - Reverse Leakage @ Vr: 2 µA @ 600 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Supplier Device Package: DBL

pacote: -

FR154G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1.5A DO204AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

PU8JC

Taiwan Semiconductor Corporation

25NS, 8A, 600V, ULTRA FAST RECOV

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 58pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

BZY55C27-RBG

Taiwan Semiconductor Corporation

DIODE ZENER 27V 500MW 0805

• Voltage - Zener (Nom) (Vz): 27 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 20 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805

pacote: -

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SF2004G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 20A TO220AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 80pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

GBPC5010M

Taiwan Semiconductor Corporation

50A, 1000V, STANDARD BRIDGE RECT

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 50 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
• Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 4-Square, GBPC
• Supplier Device Package: GBPC

pacote: -

MMSZ4679-RHG

Taiwan Semiconductor Corporation

SOD-123, 500MW, 5%, SMALL SIGNAL

• Voltage - Zener (Nom) (Vz): 2 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 5 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

pacote: -

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SR815

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 150V 8A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 150 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

pacote: -

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TST30L60CW

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 15A TO220AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• Operating Temperature - Junction: -55°C ~ 150°C

pacote: -