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STMicroelectronics Produtos - Transistores - FET, MOSFET - Simples

Registros 2.492
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pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
STD90NS3LLH7
STMicroelectronics

MOSFET N-CH 30V 80A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque4.752
MOSFET (Metal Oxide)
30V
80A (Tc)
4.5V, 10V
1.2V @ 1mA
13.7nC @ 4.5V
2110pF @ 25V
±20V
Schottky Diode (Body)
57W (Tc)
3.4 mOhm @ 40A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot STB70NF3LLT4
STMicroelectronics

MOSFET N-CH 30V 70A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque49.176
MOSFET (Metal Oxide)
30V
70A (Tc)
4.5V, 10V
1V @ 250µA
33nC @ 4.5V
1650pF @ 25V
±16V
-
100W (Tc)
9.5 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STDLED623
STMicroelectronics

MOSFET N-CH 620V 3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 620V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque6.352
MOSFET (Metal Oxide)
620V
3A (Tc)
10V
4.5V @ 50µA
15.5nC @ 10V
350pF @ 50V
±30V
-
45W (Tc)
3.6 Ohm @ 1.1A, 10V
150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
STDLED524
STMicroelectronics

MOSFET N-CH 525V 4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 525V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque3.952
MOSFET (Metal Oxide)
525V
4A (Tc)
10V
4.5V @ 50µA
12nC @ 10V
340pF @ 100V
±30V
-
45W (Tc)
2.6 Ohm @ 2.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
STD8NF25
STMicroelectronics

MOSFET N-CH 250V 8A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 72W (Tc)
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque4.880
MOSFET (Metal Oxide)
250V
8A (Tc)
10V
4V @ 250µA
16nC @ 10V
500pF @ 25V
±20V
-
72W (Tc)
420 mOhm @ 8A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot STP95N3LLH6
STMicroelectronics

MOSFET N-CH 30V 80A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 40A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque799.920
MOSFET (Metal Oxide)
30V
80A (Tc)
4.5V, 10V
2.5V @ 250µA
20nC @ 4.5V
2200pF @ 25V
±20V
-
70W (Tc)
4.7 mOhm @ 40A, 10V
175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot STD4NK60ZT4
STMicroelectronics

MOSFET N-CH 600V 4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque1.469.172
MOSFET (Metal Oxide)
600V
4A (Tc)
10V
4.5V @ 50µA
26nC @ 10V
510pF @ 25V
±30V
-
70W (Tc)
2 Ohm @ 2A, 10V
150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
STB25NF06AG
STMicroelectronics

MOSFET N-CH 60V 16A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 16A
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque6.864
MOSFET (Metal Oxide)
60V
16A
4.5V, 10V
-
-
-
-
-
-
-
-
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STH110N7F6-2
STMicroelectronics

MOSFET N-CH 68V 80A H2PAK-2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 68V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 176W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 55A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: H2Pak-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque4.960
MOSFET (Metal Oxide)
68V
80A (Tc)
10V
4V @ 250µA
100nC @ 10V
5850pF @ 25V
±20V
-
176W (Tc)
6.3 mOhm @ 55A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
H2Pak-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot STD70NS04ZL
STMicroelectronics

MOSFET N-CH 33V 70A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 33V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque630.012
MOSFET (Metal Oxide)
33V
70A (Tc)
5V, 10V
3V @ 1mA
32nC @ 5V
1800pF @ 25V
±20V
-
110W (Tc)
10.5 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
STL9P3LLH6
STMicroelectronics

MOSFET PCH 30V 9A POWERFLAT

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (3.3x3.3)
  • Package / Case: 8-PowerVDFN
pacote: 8-PowerVDFN
Estoque6.832
MOSFET (Metal Oxide)
30V
9A (Tc)
4.5V, 10V
1V @ 250µA
24nC @ 4.5V
2615pF @ 25V
±20V
-
3W (Ta)
15 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat? (3.3x3.3)
8-PowerVDFN
STL66N3LLH5
STMicroelectronics

MOSFET N-CH 30V 21A POWERFLAT56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
  • Vgs (Max): ±22V
  • FET Feature: -
  • Power Dissipation (Max): 72W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 10.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (5x6)
  • Package / Case: 8-PowerVDFN
pacote: 8-PowerVDFN
Estoque5.328
MOSFET (Metal Oxide)
30V
80A (Tc)
4.5V, 10V
3V @ 250µA
12nC @ 4.5V
1500pF @ 25V
±22V
-
72W (Tc)
5.8 mOhm @ 10.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerFlat? (5x6)
8-PowerVDFN
hot STD5N52K3
STMicroelectronics

MOSFET N-CH 525V 4.4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 525V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque42.732
MOSFET (Metal Oxide)
525V
4.4A (Tc)
10V
4.5V @ 50µA
17nC @ 10V
545pF @ 100V
±30V
-
70W (Tc)
1.5 Ohm @ 2.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot STP110N7F6
STMicroelectronics

MOSFET N-CH 68V 110A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 68V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 176W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 55A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque180.000
MOSFET (Metal Oxide)
68V
110A (Tc)
10V
4V @ 250µA
100nC @ 10V
5850pF @ 25V
±20V
-
176W (Tc)
6.5 mOhm @ 55A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
STD3N65M6
STMicroelectronics

MOSFET N-CH 650V DPAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Estoque3.536
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
STU3N65M6
STMicroelectronics

MOSFET N-CH 650V 3.5A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque4.880
MOSFET (Metal Oxide)
650V
3.5A (Tc)
10V
3.75V @ 250µA
6nC @ 10V
150pF @ 100V
±25V
-
45W (Tc)
1.5 Ohm @ 1.75A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
STS9P3LLH6
STMicroelectronics

MOSFET PCH 30V 9A SO8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque7.744
MOSFET (Metal Oxide)
30V
9A (Ta)
4.5V, 10V
2V @ 250µA
24nC @ 4.5V
2615pF @ 25V
±20V
-
2.7W (Ta)
15 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot STT6N3LLH6
STMicroelectronics

MOSFET N-CH 30V 6A SOT23-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 283pF @ 24V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-6
  • Package / Case: SOT-23-6
pacote: SOT-23-6
Estoque111.000
MOSFET (Metal Oxide)
30V
6A (Tc)
4.5V, 10V
1V @ 250µA
3.6nC @ 4.5V
283pF @ 24V
±20V
-
1.6W (Tc)
25 mOhm @ 3A, 10V
150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
STL50N6F7
STMicroelectronics

MOSFET N-CH 60V 50A POWERFLAT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (5x6)
  • Package / Case: 8-PowerVDFN
pacote: 8-PowerVDFN
Estoque4.816
MOSFET (Metal Oxide)
60V
50A (Tc)
10V
4V @ 250µA
17nC @ 10V
980pF @ 25V
±20V
-
71W (Tc)
14 mOhm @ 6.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerFlat? (5x6)
8-PowerVDFN
STL3N65M2
STMicroelectronics

MOSFET N-CH 650V 2.3A POWERFLAT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 22W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (3.3x3.3)
  • Package / Case: 8-PowerVDFN
pacote: 8-PowerVDFN
Estoque3.632
MOSFET (Metal Oxide)
650V
2.3A (Tc)
10V
4V @ 250µA
5nC @ 10V
155pF @ 100V
±25V
-
22W (Tc)
1.8 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat? (3.3x3.3)
8-PowerVDFN
STF10P6F6
STMicroelectronics

MOSFET P-CH 60V 10A TO-220FP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 48V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque6.848
MOSFET (Metal Oxide)
60V
10A (Tc)
10V
4V @ 250µA
6.4nC @ 10V
340pF @ 48V
±20V
-
20W (Tc)
160 mOhm @ 5A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot STD3N40K3
STMicroelectronics

MOSFET N CH 400V 2A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 900mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque91.260
MOSFET (Metal Oxide)
400V
2A (Tc)
10V
4.5V @ 50µA
11nC @ 10V
165pF @ 50V
±30V
-
30W (Tc)
3.4 Ohm @ 900mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
STD19NF06L
STMicroelectronics

MOSFET N-CH 60V DPAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Estoque2.016
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
STD20P3H6AG
STMicroelectronics

MOSFET PCH 30V 20A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque4.304
MOSFET (Metal Oxide)
30V
20A (Tc)
10V
4V @ 250µA
12.8nC @ 10V
635pF @ 25V
±20V
-
40W (Tc)
50 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot STD3NK60Z-1
STMicroelectronics

MOSFET N-CH 600V 2.4A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 311pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque1.014.816
MOSFET (Metal Oxide)
600V
2.4A (Tc)
10V
4.5V @ 50µA
11.8nC @ 10V
311pF @ 25V
±30V
-
45W (Tc)
3.6 Ohm @ 1.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
STS7N3LLH6
STMicroelectronics

MOSFET N-CH 30V 17A 8SOIC

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Estoque4.304
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot STD96N3LLH6
STMicroelectronics

MOSFET N-CH 30V 80A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 40A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque182.904
MOSFET (Metal Oxide)
30V
80A (Tc)
5.5V, 10V
2.5V @ 250µA
20nC @ 4.5V
2200pF @ 25V
±20V
-
70W (Tc)
4.2 mOhm @ 40A, 10V
175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
STL3P6F6
STMicroelectronics

MOSFET P-CH 60V 3A POWERFLAT

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Estoque3.408
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-