Página 4 - Rohm Semiconductor Produtos - Transistores - FET, MOSFET - Simples | Heisener Electronics
Fale conosco
SalesDept@heisener.com +86-755-83210559 ext. 816
Login/Registrar
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrinho 0

Rohm Semiconductor Produtos - Transistores - FET, MOSFET - Simples

Registros 1.247
Página  4/45
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
RQ5E065AJTCL
Rohm Semiconductor

MOSFET N-CH 30V 6.5A TSMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 760mW (Ta)
  • Rds On (Max) @ Id, Vgs: 18.1mOhm @ 6.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacote: -
Estoque23.976
MOSFET (Metal Oxide)
30 V
6.5A (Ta)
2.5V, 4.5V
1.5V @ 2mA
12.2 nC @ 4.5 V
1370 pF @ 15 V
±12V
-
760mW (Ta)
18.1mOhm @ 6.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96
R6547KNZ4C13
Rohm Semiconductor

MOSFET N-CH 650V 47A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.72mA
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 25.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacote: -
Request a Quote
MOSFET (Metal Oxide)
650 V
47A (Tc)
10V
5V @ 1.72mA
100 nC @ 10 V
4100 pF @ 25 V
±20V
-
480W (Tc)
80mOhm @ 25.8A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
SCT3040KRC14
Rohm Semiconductor

SICFET N-CH 1200V 55A TO247-4L

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 262W
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
pacote: -
Estoque2.484
SiCFET (Silicon Carbide)
1200 V
55A (Tc)
18V
5.6V @ 10mA
107 nC @ 18 V
1337 pF @ 800 V
+22V, -4V
-
262W
52mOhm @ 20A, 18V
175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
SCT3040KRC15
Rohm Semiconductor

1200V, 55A, 4-PIN THD, TRENCH-ST

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 262W
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
pacote: -
Estoque1.215
SiC (Silicon Carbide Junction Transistor)
1200 V
55A (Tj)
18V
5.6V @ 10mA
107 nC @ 18 V
1337 pF @ 800 V
+22V, -4V
-
262W
52mOhm @ 20A, 18V
175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
RQ5P010SNTL
Rohm Semiconductor

MOSFET N-CH 100V 1A TSMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacote: -
Estoque39.009
MOSFET (Metal Oxide)
100 V
1A (Ta)
4V, 10V
2.5V @ 1mA
3.5 nC @ 5 V
140 pF @ 25 V
±20V
-
700mW (Ta)
520mOhm @ 1A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
RQ3P300BETB1
Rohm Semiconductor

MOSFET N-CH 100V 10A/36A 8HSMT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN
pacote: -
Request a Quote
MOSFET (Metal Oxide)
100 V
10A (Ta), 36A (Tc)
10V
4V @ 200µA
19.1 nC @ 10 V
1250 pF @ 50 V
±20V
-
2W (Ta), 32W (Tc)
21mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
RTQ035N03HZGTR
Rohm Semiconductor

MOSFET N-CH 30V 3.5A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 54mOhm @ 3.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacote: -
Estoque29.400
MOSFET (Metal Oxide)
30 V
3.5A (Ta)
2.5V, 4.5V
1.5V @ 1mA
6.4 nC @ 4.5 V
285 pF @ 10 V
±12V
-
950mW (Ta)
54mOhm @ 3.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
R6004END4TL1
Rohm Semiconductor

600V 2.4A SOT-223-3, LOW-NOISE P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 9.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-3
  • Package / Case: TO-261-3
pacote: -
Estoque11.988
MOSFET (Metal Oxide)
600 V
2.4A (Tc)
10V
4V @ 1mA
15 nC @ 10 V
250 pF @ 25 V
±20V
-
9.1W (Tc)
980mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
SOT-223-3
TO-261-3
RD3U040CNTL1
Rohm Semiconductor

MOSFET N-CH 250V 4A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 29W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque2.622
MOSFET (Metal Oxide)
250 V
4A (Tc)
10V
5.5V @ 1mA
8.5 nC @ 10 V
350 pF @ 25 V
±30V
-
29W (Tc)
1.3Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
R6030KNXC7
Rohm Semiconductor

MOSFET N-CH 600V 30A TO220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 86W (Tc)
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacote: -
Estoque4.500
MOSFET (Metal Oxide)
600 V
30A (Tc)
10V
5V @ 1mA
56 nC @ 10 V
2350 pF @ 25 V
±20V
-
86W (Tc)
130mOhm @ 14.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
RD3S100CNTL1
Rohm Semiconductor

MOSFET N-CH 190V 10A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 190 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 182mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque2.763
MOSFET (Metal Oxide)
190 V
10A (Tc)
4V, 10V
2.5V @ 1mA
52 nC @ 10 V
2000 pF @ 25 V
±20V
-
85W (Tc)
182mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
SCT4026DW7HRTL
Rohm Semiconductor

750V, 51A, 7-PIN SMD, TRENCH-STR

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 750 V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
  • Vgs (Max): +21V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 150W
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7L
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
pacote: -
Estoque3.000
SiCFET (Silicon Carbide)
750 V
51A (Tc)
18V
4.8V @ 15.4mA
94 nC @ 18 V
2320 pF @ 500 V
+21V, -4V
-
150W
34mOhm @ 29A, 18V
175°C (TJ)
Surface Mount
TO-263-7L
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
RS3E180ATTB1
Rohm Semiconductor

MOSFET P-CH 30V 18A 8SOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 5.4mOhm @ 18A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: -
Estoque17.079
MOSFET (Metal Oxide)
30 V
18A (Ta)
4.5V, 10V
2.5V @ 5mA
160 nC @ 10 V
7200 pF @ 15 V
±20V
-
1.4W (Ta)
5.4mOhm @ 18A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RD3L050SNTL1
Rohm Semiconductor

MOSFET N-CH 60V 5A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 15W (Tc)
  • Rds On (Max) @ Id, Vgs: 109mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque7.458
MOSFET (Metal Oxide)
60 V
5A (Ta)
4V, 10V
3V @ 1mA
8 nC @ 10 V
290 pF @ 10 V
±20V
-
15W (Tc)
109mOhm @ 5A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
BSM300C12P3E301
Rohm Semiconductor

SICFET N-CH 1200V 300A MODULE

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5.6V @ 80mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 1360W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: Module
  • Package / Case: Module
pacote: -
Request a Quote
SiCFET (Silicon Carbide)
1200 V
300A (Tc)
-
5.6V @ 80mA
-
1500 pF @ 10 V
+22V, -4V
-
1360W (Tc)
-
-40°C ~ 150°C (TJ)
-
Module
Module
BSM300C12P3E201
Rohm Semiconductor

SICFET N-CH 1200V 300A MODULE

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5.6V @ 80mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 1360W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: Module
  • Package / Case: Module
pacote: -
Estoque12
SiCFET (Silicon Carbide)
1200 V
300A (Tc)
-
5.6V @ 80mA
-
15000 pF @ 10 V
+22V, -4V
-
1360W (Tc)
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
RV5A040APTCR1
Rohm Semiconductor

MOSFET P-CH 12V 4A DFN1616-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
  • Vgs (Max): -8V, 0V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1616-8S
  • Package / Case: 6-PowerWFDFN
pacote: -
Estoque9.000
MOSFET (Metal Oxide)
12 V
4A (Ta)
1.5V, 4.5V
1V @ 1mA
16 nC @ 4.5 V
2000 pF @ 6 V
-8V, 0V
-
700mW (Ta)
62mOhm @ 4A, 4.5V
150°C (TJ)
Surface Mount
DFN1616-8S
6-PowerWFDFN
RJ1P07CBHTL1
Rohm Semiconductor

NCH 100V 70A, TO-263AB, POWER M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 135W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 70A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AB
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacote: -
Estoque2.400
MOSFET (Metal Oxide)
100 V
70A (Tc)
6V, 10V
4V @ 1mA
73 nC @ 10 V
4650 pF @ 50 V
±20V
-
135W (Tc)
5.1mOhm @ 70A, 10V
150°C (TJ)
Surface Mount
TO-263AB
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R6524ENXC7G
Rohm Semiconductor

650V 24A TO-220FM, LOW-NOISE POW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 750µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacote: -
Estoque3.000
MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
4V @ 750µA
70 nC @ 10 V
1650 pF @ 25 V
±20V
-
74W (Tc)
185mOhm @ 11.3A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
RD3L150SNTL1
Rohm Semiconductor

MOSFET N-CH 60V 15A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque73.614
MOSFET (Metal Oxide)
60 V
15A (Ta)
4V, 10V
3V @ 1mA
18 nC @ 10 V
930 pF @ 10 V
±20V
-
20W (Tc)
40mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
R6515KNJTL
Rohm Semiconductor

MOSFET N-CH 650V 15A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 430µA
  • Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 184W (Tc)
  • Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacote: -
Estoque240
MOSFET (Metal Oxide)
650 V
15A (Tc)
10V
5V @ 430µA
27.5 nC @ 10 V
1050 pF @ 25 V
±20V
-
184W (Tc)
315mOhm @ 6.5A, 10V
150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
GNP1070TC-ZE2
Rohm Semiconductor

ECOGAN, 650V 20A DFN8080K, E-MOD

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V
  • Vgs(th) (Max) @ Id: 2.4V @ 18mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V
  • Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V
  • Vgs (Max): +6V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 56W (Tc)
  • Rds On (Max) @ Id, Vgs: 98mOhm @ 1.9A, 5.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN8080K
  • Package / Case: 8-PowerDFN
pacote: -
Estoque12.453
GaNFET (Gallium Nitride)
650 V
20A (Tc)
5V, 5.5V
2.4V @ 18mA
5.2 nC @ 6 V
200 pF @ 400 V
+6V, -10V
-
56W (Tc)
98mOhm @ 1.9A, 5.5V
150°C (TJ)
Surface Mount
DFN8080K
8-PowerDFN
RW4E075AJTCL1
Rohm Semiconductor

NCH 30V 7.5A POWER MOSFET: RW4E0

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 7.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1616-7T
  • Package / Case: 6-PowerUFDFN
pacote: -
Estoque25.656
MOSFET (Metal Oxide)
30 V
7.5A (Ta)
2.5V, 4.5V
1.5V @ 2mA
6.3 nC @ 4.5 V
720 pF @ 15 V
±12V
-
1.5W (Ta)
26mOhm @ 7.5A, 4.5V
150°C (TJ)
Surface Mount
DFN1616-7T
6-PowerUFDFN
R6515KNZC8
Rohm Semiconductor

MOSFET N-CH 650V 15A TO3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 430µA
  • Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacote: -
Request a Quote
MOSFET (Metal Oxide)
650 V
15A (Tc)
10V
5V @ 430µA
27.5 nC @ 10 V
1050 pF @ 25 V
±20V
-
60W (Tc)
315mOhm @ 6.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
RS3E075ATTB1
Rohm Semiconductor

PCH -30V -7.5A MIDDLE POWER MOSF

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: -
Estoque7.074
MOSFET (Metal Oxide)
30 V
7.5A (Ta)
4.5V, 10V
2.5V @ 1mA
25 nC @ 10 V
1250 pF @ 15 V
±20V
-
2W (Ta)
23.5mOhm @ 7.5A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
R6021ANZC8
Rohm Semiconductor

MOSFET N-CH 650V 35A TO PKG

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RQ5H030TNTL
Rohm Semiconductor

MOSFET N-CH 45V 3A TSMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
pacote: -
Estoque39.027
MOSFET (Metal Oxide)
45 V
3A (Ta)
2.5V, 4.5V
1.5V @ 1mA
6.2 nC @ 4.5 V
510 pF @ 10 V
±12V
-
700mW (Ta)
67mOhm @ 3A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96
RX3P07BBHC16
Rohm Semiconductor

NCH 100V 70A, TO-220AB, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.4mOhm @ 70A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: -
Estoque2.985
MOSFET (Metal Oxide)
100 V
70A (Tc)
6V, 10V
4V @ 1mA
38 nC @ 10 V
2410 pF @ 50 V
±20V
-
89W (Tc)
8.4mOhm @ 70A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3