Página 2 - ON Semiconductor Produtos - Transistores - IGBT - Simples

NGTD21T65F2SWK

ON Semiconductor

IGBT TRENCH FIELD STOP 650V DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 45A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

pacote: Die

Estoque7.328

650V

-

200A

1.9V @ 15V, 45A

-

Standard

-

-55°C ~ 175°C (TJ)

Surface Mount

Die

NGTD21T65F2WP

ON Semiconductor

IGBT TRENCH FIELD STOP 650V DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 45A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

pacote: Die

Estoque3.568

650V

-

200A

1.9V @ 15V, 45A

-

Standard

-

-55°C ~ 175°C (TJ)

Surface Mount

Die

NGTD20T120F2SWK

ON Semiconductor

IGBT TRENCH FIELD STOP 1200V DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

pacote: Die

Estoque5.968

1200V

-

100A

2.4V @ 15V, 20A

-

Standard

-

-55°C ~ 175°C (TJ)

Surface Mount

Die

NGTB50N65S1WG

ON Semiconductor

IGBT TRENCH 650V 140A TO247

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 140A
Current - Collector Pulsed (Icm): 140A
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
Power - Max: 300W
Switching Energy: 1.25mJ (on), 530µJ (off)
Input Type: Standard
Gate Charge: 128nC
Td (on/off) @ 25°C: 75ns/128ns
Test Condition: 400V, 50A, 10 Ohm, 15V
Reverse Recovery Time (trr): 70ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

pacote: TO-247-3

Estoque2.288

650V

140A

2.45V @ 15V, 50A

300W

1.25mJ (on), 530µJ (off)

Standard

128nC

75ns/128ns

400V, 50A, 10 Ohm, 15V

70ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247

NGTB15N120IHWG

ON Semiconductor

IGBT 15A 1200V TO-247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 15A
Power - Max: 278W
Switching Energy: 360µJ (off)
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: -/130ns
Test Condition: 600V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

pacote: TO-247-3

Estoque6.448

1200V

30A

60A

2.45V @ 15V, 15A

278W

360µJ (off)

Standard

120nC

-/130ns

600V, 15A, 10 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

NGTB45N60S1WG

ON Semiconductor

IGBT 45A 600V TO-247

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 90A
Current - Collector Pulsed (Icm): 180A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
Power - Max: 300W
Switching Energy: 1.25mJ (on), 530µJ (off)
Input Type: Standard
Gate Charge: 125nC
Td (on/off) @ 25°C: 72ns/132ns
Test Condition: 400V, 45A, 10 Ohm, 15V
Reverse Recovery Time (trr): 70ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

pacote: TO-247-3

Estoque3.520

600V

90A

180A

2.4V @ 15V, 45A

300W

1.25mJ (on), 530µJ (off)

Standard

125nC

72ns/132ns

400V, 45A, 10 Ohm, 15V

70ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

NGTD20T120F2WP

ON Semiconductor

IGBT TRENCH FIELD STOP 1200V DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

pacote: Die

Estoque3.552

1200V

-

100A

2.4V @ 15V, 20A

-

Standard

-

-55°C ~ 175°C (TJ)

Surface Mount

Die

NGTB35N65FL2WG

ON Semiconductor

IGBT 650V 70A 300W TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Power - Max: 300W
Switching Energy: 840µJ (on), 280µJ (off)
Input Type: Standard
Gate Charge: 125nC
Td (on/off) @ 25°C: 72ns/132ns
Test Condition: 400V, 35A, 10 Ohm, 15V
Reverse Recovery Time (trr): 68ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

pacote: TO-247-3

Estoque5.040

650V

70A

120A

2V @ 15V, 35A

300W

840µJ (on), 280µJ (off)

Standard

125nC

72ns/132ns

400V, 35A, 10 Ohm, 15V

68ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247

NGTB35N60FL2WG

ON Semiconductor

IGBT 600V 70A 300W TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Power - Max: 300W
Switching Energy: 840µJ (on), 280µJ (off)
Input Type: Standard
Gate Charge: 125nC
Td (on/off) @ 25°C: 72ns/132ns
Test Condition: 400V, 35A, 10 Ohm, 15V
Reverse Recovery Time (trr): 68ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

pacote: TO-247-3

Estoque6.624

600V

70A

120A

2V @ 15V, 35A

300W

840µJ (on), 280µJ (off)

Standard

125nC

72ns/132ns

400V, 35A, 10 Ohm, 15V

68ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247

NGTB20N60L2TF1G

ON Semiconductor

IGBT 600V 20A TO3PF

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A
Power - Max: 64W
Switching Energy: -
Input Type: Standard
Gate Charge: 84nC
Td (on/off) @ 25°C: 60ns/193ns
Test Condition: 300V, 20A, 30 Ohm, 15V
Reverse Recovery Time (trr): 70ns
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Supplier Device Package: TO-3PF-3

pacote: TO-3PFM, SC-93-3

Estoque73.176

600V

40A

80A

1.65V @ 15V, 20A

64W

-

Standard

84nC

60ns/193ns

300V, 20A, 30 Ohm, 15V

70ns

175°C (TJ)

Through Hole

TO-3PFM, SC-93-3

TO-3PF-3

NGTB40N65IHRWG

ON Semiconductor

IGBT FIELD STOP 650V 80A TO247

IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
Power - Max: 405W
Switching Energy: 420µJ (off)
Input Type: Standard
Gate Charge: 190nC
Td (on/off) @ 25°C: -
Test Condition: 400V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

pacote: TO-247-3

Estoque4.432

650V

80A

160A

1.7V @ 15V, 40A

405W

420µJ (off)

Standard

190nC

-

400V, 40A, 10 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247

NGTG20N60L2TF1G

ON Semiconductor

IGBT 600V 40A 64W TO-3PF

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 105A
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A
Power - Max: 64W
Switching Energy: -
Input Type: Standard
Gate Charge: 84nC
Td (on/off) @ 25°C: 60ns/193ns
Test Condition: 300V, 20A, 30 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: -

pacote: TO-3P-3 Full Pack

Estoque5.296

600V

40A

105A

1.65V @ 15V, 20A

64W

-

Standard

84nC

60ns/193ns

300V, 20A, 30 Ohm, 15V

-

175°C (TJ)

Through Hole

TO-3P-3 Full Pack

-

NGTD17T65F2SWK

ON Semiconductor

IGBT TRENCH FIELD STOP 650V DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

pacote: Die

Estoque4.880

650V

-

160A

2V @ 15V, 40A

-

Standard

-

-55°C ~ 175°C (TJ)

Surface Mount

Die

NGTD17T65F2WP

ON Semiconductor

IGBT TRENCH FIELD STOP 650V DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

pacote: Die

Estoque7.344

650V

-

160A

2V @ 15V, 40A

-

Standard

-

-55°C ~ 175°C (TJ)

Surface Mount

Die

NGTD14T65F2SWK

ON Semiconductor

IGBT TRENCH FIELD STOP 650V DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

pacote: Die

Estoque7.216

650V

-

120A

2V @ 15V, 35A

-

Standard

-

-55°C ~ 175°C (TJ)

Surface Mount

Die

NGTD13T65F2SWK

ON Semiconductor

IGBT TRENCH FIELD STOP 650V DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

pacote: Die

Estoque6.080

650V

-

120A

2.2V @ 15V, 30A

-

Standard

-

-55°C ~ 175°C (TJ)

Surface Mount

Die

NGTD14T65F2WP

ON Semiconductor

IGBT TRENCH FIELD STOP 650V DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

pacote: Die

Estoque2.176

650V

-

120A

2V @ 15V, 35A

-

Standard

-

-55°C ~ 175°C (TJ)

Surface Mount

Die

NGTD13T65F2WP

ON Semiconductor

IGBT TRENCH FIELD STOP 650V DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

pacote: Die

Estoque7.488

650V

-

120A

2.2V @ 15V, 30A

-

Standard

-

-55°C ~ 175°C (TJ)

Surface Mount

Die

NGTG12N60TF1G

ON Semiconductor

IGBT 600V 24A 54W TO-3PF

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 24A
Current - Collector Pulsed (Icm): 88A
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 12A
Power - Max: 54W
Switching Energy: -
Input Type: Standard
Gate Charge: 84nC
Td (on/off) @ 25°C: 55ns/200ns
Test Condition: 300V, 15A, 30 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: -

pacote: TO-3P-3 Full Pack

Estoque3.936

600V

24A

88A

1.6V @ 15V, 12A

54W

-

Standard

84nC

55ns/200ns

300V, 15A, 30 Ohm, 15V

-

150°C (TJ)

Through Hole

TO-3P-3 Full Pack

-

NGTB10N60FG

ON Semiconductor

IGBT 600V 10A TO220F3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 20A
Current - Collector Pulsed (Icm): 72A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A
Power - Max: 40W
Switching Energy: -
Input Type: Standard
Gate Charge: 55nC
Td (on/off) @ 25°C: 40ns/145ns
Test Condition: 300V, 10A, 30 Ohm, 15V
Reverse Recovery Time (trr): 70ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F-3FS

pacote: TO-220-3 Full Pack

Estoque7.600

600V

20A

72A

1.7V @ 15V, 10A

40W

-

Standard

55nC

40ns/145ns

300V, 10A, 30 Ohm, 15V

70ns

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F-3FS

NGTB15N60R2FG

ON Semiconductor

IGBT 15A 600V TO220-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 24A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Power - Max: 54W
Switching Energy: 550µJ (on), 220µJ (off)
Input Type: Standard
Gate Charge: 80nC
Td (on/off) @ 25°C: 70ns/190ns
Test Condition: 300V, 15A, 30 Ohm, 15V
Reverse Recovery Time (trr): 95ns
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F-3FS

pacote: TO-220-3 Full Pack

Estoque66.384

600V

24A

60A

2.1V @ 15V, 15A

54W

550µJ (on), 220µJ (off)

Standard

80nC

70ns/190ns

300V, 15A, 30 Ohm, 15V

95ns

175°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F-3FS

TIG064E8-TL-H

ON Semiconductor

IGBT 400V ECH8

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 7V @ 2.5V, 100A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

pacote: 8-SMD, Flat Lead

Estoque180.000

400V

-

150A

7V @ 2.5V, 100A

-

Standard

-

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-ECH

NGTB05N60R2DT4G

ON Semiconductor

IGBT 5A 600V DPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 16A
Current - Collector Pulsed (Icm): 20A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Power - Max: 56W
Switching Energy: 188µJ (on), 60µJ (off)
Input Type: Standard
Gate Charge: 30nC
Td (on/off) @ 25°C: 44ns/82ns
Test Condition: 300V, 5A, 30 Ohm, 15V
Reverse Recovery Time (trr): 70ns
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

pacote: TO-252-3, DPak (2 Leads + Tab), SC-63

Estoque6.864

600V

16A

20A

2V @ 15V, 5A

56W

188µJ (on), 60µJ (off)

Standard

30nC

44ns/82ns

300V, 5A, 30 Ohm, 15V

70ns

175°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

TIG074E8-TL-H

ON Semiconductor

IGBT 400V 150A 8ECH

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 5.4V @ 2.5V, 100A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-28FL/ECH8

pacote: 8-SMD, Flat Lead

Estoque5.824

400V

-

150A

5.4V @ 2.5V, 100A

-

Standard

-

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

SOT-28FL/ECH8

NGTB30N135IHR1WG

ON Semiconductor

IGBT 1350V 30A TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1350V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 30A
Power - Max: 394W
Switching Energy: 630µA (off)
Input Type: Standard
Gate Charge: 220nC
Td (on/off) @ 25°C: -/200ns
Test Condition: 600V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

pacote: TO-247-3

Estoque3.696

1350V

60A

120A

3V @ 15V, 30A

394W

630µA (off)

Standard

220nC

-/200ns

600V, 30A, 10 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

NGTB40N65IHRTG

ON Semiconductor

650V/40A RC IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

Estoque5.152

-

NGTB25N120SWG

ON Semiconductor

IGBT 25A 1200V TO-247

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Power - Max: 385W
Switching Energy: 1.95mJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 178nC
Td (on/off) @ 25°C: 87ns/179ns
Test Condition: 600V, 25A, 10 Ohm, 15V
Reverse Recovery Time (trr): 154ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

pacote: TO-247-3

Estoque6.992

1200V

50A

100A

2.4V @ 15V, 25A

385W

1.95mJ (on), 600µJ (off)

Standard

178nC

87ns/179ns

600V, 25A, 10 Ohm, 15V

154ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

NGTB15N60S1EG

ON Semiconductor

IGBT 600V 30A 117W TO220-3

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Power - Max: 117W
Switching Energy: 550µJ (on), 350µJ (off)
Input Type: Standard
Gate Charge: 88nC
Td (on/off) @ 25°C: 65ns/170ns
Test Condition: 400V, 15A, 22 Ohm, 15V
Reverse Recovery Time (trr): 270ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

pacote: TO-220-3

Estoque5.216

600V

30A

120A

1.7V @ 15V, 15A

117W

550µJ (on), 350µJ (off)

Standard

88nC

65ns/170ns

400V, 15A, 22 Ohm, 15V

270ns

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

Nº de peças	Fabricante	Descrição	pacote	Estoque	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
NGTD21T65F2SWK	ON Semiconductor	IGBT TRENCH FIELD STOP 650V DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 45A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	pacote: Die	Estoque7.328	650V	-	200A	1.9V @ 15V, 45A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
NGTD21T65F2WP	ON Semiconductor	IGBT TRENCH FIELD STOP 650V DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 45A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	pacote: Die	Estoque3.568	650V	-	200A	1.9V @ 15V, 45A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
NGTD20T120F2SWK	ON Semiconductor	IGBT TRENCH FIELD STOP 1200V DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	pacote: Die	Estoque5.968	1200V	-	100A	2.4V @ 15V, 20A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
NGTB50N65S1WG	ON Semiconductor	IGBT TRENCH 650V 140A TO247 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 140A Current - Collector Pulsed (Icm): 140A Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A Power - Max: 300W Switching Energy: 1.25mJ (on), 530µJ (off) Input Type: Standard Gate Charge: 128nC Td (on/off) @ 25°C: 75ns/128ns Test Condition: 400V, 50A, 10 Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	pacote: TO-247-3	Estoque2.288	650V	140A	140A	2.45V @ 15V, 50A	300W	1.25mJ (on), 530µJ (off)	Standard	128nC	75ns/128ns	400V, 50A, 10 Ohm, 15V	70ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
NGTB15N120IHWG	ON Semiconductor	IGBT 15A 1200V TO-247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 15A Power - Max: 278W Switching Energy: 360µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: -/130ns Test Condition: 600V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	pacote: TO-247-3	Estoque6.448	1200V	30A	60A	2.45V @ 15V, 15A	278W	360µJ (off)	Standard	120nC	-/130ns	600V, 15A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
NGTB45N60S1WG	ON Semiconductor	IGBT 45A 600V TO-247 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A Power - Max: 300W Switching Energy: 1.25mJ (on), 530µJ (off) Input Type: Standard Gate Charge: 125nC Td (on/off) @ 25°C: 72ns/132ns Test Condition: 400V, 45A, 10 Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	pacote: TO-247-3	Estoque3.520	600V	90A	180A	2.4V @ 15V, 45A	300W	1.25mJ (on), 530µJ (off)	Standard	125nC	72ns/132ns	400V, 45A, 10 Ohm, 15V	70ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
NGTD20T120F2WP	ON Semiconductor	IGBT TRENCH FIELD STOP 1200V DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	pacote: Die	Estoque3.552	1200V	-	100A	2.4V @ 15V, 20A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
NGTB35N65FL2WG	ON Semiconductor	IGBT 650V 70A 300W TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Power - Max: 300W Switching Energy: 840µJ (on), 280µJ (off) Input Type: Standard Gate Charge: 125nC Td (on/off) @ 25°C: 72ns/132ns Test Condition: 400V, 35A, 10 Ohm, 15V Reverse Recovery Time (trr): 68ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	pacote: TO-247-3	Estoque5.040	650V	70A	120A	2V @ 15V, 35A	300W	840µJ (on), 280µJ (off)	Standard	125nC	72ns/132ns	400V, 35A, 10 Ohm, 15V	68ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
NGTB35N60FL2WG	ON Semiconductor	IGBT 600V 70A 300W TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Power - Max: 300W Switching Energy: 840µJ (on), 280µJ (off) Input Type: Standard Gate Charge: 125nC Td (on/off) @ 25°C: 72ns/132ns Test Condition: 400V, 35A, 10 Ohm, 15V Reverse Recovery Time (trr): 68ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	pacote: TO-247-3	Estoque6.624	600V	70A	120A	2V @ 15V, 35A	300W	840µJ (on), 280µJ (off)	Standard	125nC	72ns/132ns	400V, 35A, 10 Ohm, 15V	68ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
NGTB20N60L2TF1G	ON Semiconductor	IGBT 600V 20A TO3PF IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A Power - Max: 64W Switching Energy: - Input Type: Standard Gate Charge: 84nC Td (on/off) @ 25°C: 60ns/193ns Test Condition: 300V, 20A, 30 Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PF-3	pacote: TO-3PFM, SC-93-3	Estoque73.176	600V	40A	80A	1.65V @ 15V, 20A	64W	-	Standard	84nC	60ns/193ns	300V, 20A, 30 Ohm, 15V	70ns	175°C (TJ)	Through Hole	TO-3PFM, SC-93-3	TO-3PF-3
NGTB40N65IHRWG	ON Semiconductor	IGBT FIELD STOP 650V 80A TO247 IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A Power - Max: 405W Switching Energy: 420µJ (off) Input Type: Standard Gate Charge: 190nC Td (on/off) @ 25°C: - Test Condition: 400V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	pacote: TO-247-3	Estoque4.432	650V	80A	160A	1.7V @ 15V, 40A	405W	420µJ (off)	Standard	190nC	-	400V, 40A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
NGTG20N60L2TF1G	ON Semiconductor	IGBT 600V 40A 64W TO-3PF IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 105A Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A Power - Max: 64W Switching Energy: - Input Type: Standard Gate Charge: 84nC Td (on/off) @ 25°C: 60ns/193ns Test Condition: 300V, 20A, 30 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: -	pacote: TO-3P-3 Full Pack	Estoque5.296	600V	40A	105A	1.65V @ 15V, 20A	64W	-	Standard	84nC	60ns/193ns	300V, 20A, 30 Ohm, 15V	-	175°C (TJ)	Through Hole	TO-3P-3 Full Pack	-
NGTD17T65F2SWK	ON Semiconductor	IGBT TRENCH FIELD STOP 650V DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	pacote: Die	Estoque4.880	650V	-	160A	2V @ 15V, 40A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
NGTD17T65F2WP	ON Semiconductor	IGBT TRENCH FIELD STOP 650V DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	pacote: Die	Estoque7.344	650V	-	160A	2V @ 15V, 40A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
NGTD14T65F2SWK	ON Semiconductor	IGBT TRENCH FIELD STOP 650V DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	pacote: Die	Estoque7.216	650V	-	120A	2V @ 15V, 35A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
NGTD13T65F2SWK	ON Semiconductor	IGBT TRENCH FIELD STOP 650V DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	pacote: Die	Estoque6.080	650V	-	120A	2.2V @ 15V, 30A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
NGTD14T65F2WP	ON Semiconductor	IGBT TRENCH FIELD STOP 650V DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	pacote: Die	Estoque2.176	650V	-	120A	2V @ 15V, 35A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
NGTD13T65F2WP	ON Semiconductor	IGBT TRENCH FIELD STOP 650V DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	pacote: Die	Estoque7.488	650V	-	120A	2.2V @ 15V, 30A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
NGTG12N60TF1G	ON Semiconductor	IGBT 600V 24A 54W TO-3PF IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 88A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 12A Power - Max: 54W Switching Energy: - Input Type: Standard Gate Charge: 84nC Td (on/off) @ 25°C: 55ns/200ns Test Condition: 300V, 15A, 30 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: -	pacote: TO-3P-3 Full Pack	Estoque3.936	600V	24A	88A	1.6V @ 15V, 12A	54W	-	Standard	84nC	55ns/200ns	300V, 15A, 30 Ohm, 15V	-	150°C (TJ)	Through Hole	TO-3P-3 Full Pack	-
NGTB10N60FG	ON Semiconductor	IGBT 600V 10A TO220F3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 72A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A Power - Max: 40W Switching Energy: - Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 40ns/145ns Test Condition: 300V, 10A, 30 Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F-3FS	pacote: TO-220-3 Full Pack	Estoque7.600	600V	20A	72A	1.7V @ 15V, 10A	40W	-	Standard	55nC	40ns/145ns	300V, 10A, 30 Ohm, 15V	70ns	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F-3FS
NGTB15N60R2FG	ON Semiconductor	IGBT 15A 600V TO220-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Power - Max: 54W Switching Energy: 550µJ (on), 220µJ (off) Input Type: Standard Gate Charge: 80nC Td (on/off) @ 25°C: 70ns/190ns Test Condition: 300V, 15A, 30 Ohm, 15V Reverse Recovery Time (trr): 95ns Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F-3FS	pacote: TO-220-3 Full Pack	Estoque66.384	600V	24A	60A	2.1V @ 15V, 15A	54W	550µJ (on), 220µJ (off)	Standard	80nC	70ns/190ns	300V, 15A, 30 Ohm, 15V	95ns	175°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F-3FS
TIG064E8-TL-H	ON Semiconductor	IGBT 400V ECH8 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 7V @ 2.5V, 100A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	pacote: 8-SMD, Flat Lead	Estoque180.000	400V	-	150A	7V @ 2.5V, 100A	-	-	Standard	-	-	-	-	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
NGTB05N60R2DT4G	ON Semiconductor	IGBT 5A 600V DPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 20A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A Power - Max: 56W Switching Energy: 188µJ (on), 60µJ (off) Input Type: Standard Gate Charge: 30nC Td (on/off) @ 25°C: 44ns/82ns Test Condition: 300V, 5A, 30 Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	pacote: TO-252-3, DPak (2 Leads + Tab), SC-63	Estoque6.864	600V	16A	20A	2V @ 15V, 5A	56W	188µJ (on), 60µJ (off)	Standard	30nC	44ns/82ns	300V, 5A, 30 Ohm, 15V	70ns	175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK
TIG074E8-TL-H	ON Semiconductor	IGBT 400V 150A 8ECH IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 5.4V @ 2.5V, 100A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/ECH8	pacote: 8-SMD, Flat Lead	Estoque5.824	400V	-	150A	5.4V @ 2.5V, 100A	-	-	Standard	-	-	-	-	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	SOT-28FL/ECH8
NGTB30N135IHR1WG	ON Semiconductor	IGBT 1350V 30A TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1350V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 30A Power - Max: 394W Switching Energy: 630µA (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25°C: -/200ns Test Condition: 600V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	pacote: TO-247-3	Estoque3.696	1350V	60A	120A	3V @ 15V, 30A	394W	630µA (off)	Standard	220nC	-/200ns	600V, 30A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
NGTB40N65IHRTG	ON Semiconductor	650V/40A RC IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Estoque5.152	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NGTB25N120SWG	ON Semiconductor	IGBT 25A 1200V TO-247 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 385W Switching Energy: 1.95mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 178nC Td (on/off) @ 25°C: 87ns/179ns Test Condition: 600V, 25A, 10 Ohm, 15V Reverse Recovery Time (trr): 154ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	pacote: TO-247-3	Estoque6.992	1200V	50A	100A	2.4V @ 15V, 25A	385W	1.95mJ (on), 600µJ (off)	Standard	178nC	87ns/179ns	600V, 25A, 10 Ohm, 15V	154ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
NGTB15N60S1EG	ON Semiconductor	IGBT 600V 30A 117W TO220-3 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A Power - Max: 117W Switching Energy: 550µJ (on), 350µJ (off) Input Type: Standard Gate Charge: 88nC Td (on/off) @ 25°C: 65ns/170ns Test Condition: 400V, 15A, 22 Ohm, 15V Reverse Recovery Time (trr): 270ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	pacote: TO-220-3	Estoque5.216	600V	30A	120A	1.7V @ 15V, 15A	117W	550µJ (on), 350µJ (off)	Standard	88nC	65ns/170ns	400V, 15A, 22 Ohm, 15V	270ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220