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ON Semiconductor Produtos - Transistores - FET, MOSFET - Simples

Registros 2.260
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Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot NTD6600N
ON Semiconductor

MOSFET N-CH 100V 12A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 146 mOhm @ 6A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque16.980
MOSFET (Metal Oxide)
100V
12A (Ta)
5V
2V @ 250µA
20nC @ 5V
700pF @ 25V
±20V
-
1.28W (Ta), 56.6W (Tc)
146 mOhm @ 6A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD65N03RT4G
ON Semiconductor

MOSFET N-CH 25V 9.5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque30.036
MOSFET (Metal Oxide)
25V
9.5A (Ta), 32A (Tc)
4.5V, 10V
2V @ 250µA
16nC @ 5V
1400pF @ 20V
±20V
-
1.3W (Ta), 50W (Tc)
8.4 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
NTD65N03RT4
ON Semiconductor

MOSFET N-CH 25V 9.5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque3.056
MOSFET (Metal Oxide)
25V
9.5A (Ta), 32A (Tc)
4.5V, 10V
2V @ 250µA
16nC @ 5V
1400pF @ 20V
±20V
-
1.3W (Ta), 50W (Tc)
8.4 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD65N03RG
ON Semiconductor

MOSFET N-CH 25V 9.5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque61.404
MOSFET (Metal Oxide)
25V
9.5A (Ta), 32A (Tc)
4.5V, 10V
2V @ 250µA
16nC @ 5V
1400pF @ 20V
±20V
-
1.3W (Ta), 50W (Tc)
8.4 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
NTD65N03R-1G
ON Semiconductor

MOSFET N-CH 25V 9.5A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque6.864
MOSFET (Metal Oxide)
25V
9.5A (Ta), 32A (Tc)
4.5V, 10V
2V @ 250µA
16nC @ 5V
1400pF @ 20V
±20V
-
1.3W (Ta), 50W (Tc)
8.4 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
NTD65N03R-035
ON Semiconductor

MOSFET N-CH 25V 9.5A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
pacote: TO-251-3 Stub Leads, IPak
Estoque5.360
MOSFET (Metal Oxide)
25V
9.5A (Ta), 32A (Tc)
4.5V, 10V
2V @ 250µA
16nC @ 5V
1400pF @ 20V
±20V
-
1.3W (Ta), 50W (Tc)
8.4 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
hot NTD65N03R-001
ON Semiconductor

MOSFET N-CH 25V 9.5A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque17.100
MOSFET (Metal Oxide)
25V
9.5A (Ta), 32A (Tc)
4.5V, 10V
2V @ 250µA
16nC @ 5V
1400pF @ 20V
±20V
-
1.3W (Ta), 50W (Tc)
8.4 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
NTD65N03R
ON Semiconductor

MOSFET N-CH 25V 9.5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque7.888
MOSFET (Metal Oxide)
25V
9.5A (Ta), 32A (Tc)
4.5V, 10V
2V @ 250µA
16nC @ 5V
1400pF @ 20V
±20V
-
1.3W (Ta), 50W (Tc)
8.4 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD60N02RG
ON Semiconductor

MOSFET N-CH 25V 8.5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta), 58W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque101.520
MOSFET (Metal Oxide)
25V
8.5A (Ta), 32A (Tc)
4.5V, 10V
2V @ 250µA
14nC @ 4.5V
1330pF @ 20V
±20V
-
1.25W (Ta), 58W (Tc)
10.5 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
NTD60N02R-35G
ON Semiconductor

MOSFET N-CH 25V 8.5A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta), 58W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
pacote: TO-251-3 Stub Leads, IPak
Estoque6.416
MOSFET (Metal Oxide)
25V
8.5A (Ta), 32A (Tc)
4.5V, 10V
2V @ 250µA
14nC @ 4.5V
1330pF @ 20V
±20V
-
1.25W (Ta), 58W (Tc)
10.5 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
hot NTD60N02R-1G
ON Semiconductor

MOSFET N-CH 25V 8.5A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta), 58W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque112.860
MOSFET (Metal Oxide)
25V
8.5A (Ta), 32A (Tc)
4.5V, 10V
2V @ 250µA
14nC @ 4.5V
1330pF @ 20V
±20V
-
1.25W (Ta), 58W (Tc)
10.5 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot NTD60N02R-035
ON Semiconductor

MOSFET N-CH 25V 8.5A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta), 58W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
pacote: TO-251-3 Stub Leads, IPak
Estoque57.600
MOSFET (Metal Oxide)
25V
8.5A (Ta), 32A (Tc)
4.5V, 10V
2V @ 250µA
14nC @ 4.5V
1330pF @ 20V
±20V
-
1.25W (Ta), 58W (Tc)
10.5 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
hot NTD60N02R
ON Semiconductor

MOSFET N-CH 25V 8.5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta), 58W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque152.868
MOSFET (Metal Oxide)
25V
8.5A (Ta), 32A (Tc)
4.5V, 10V
2V @ 250µA
14nC @ 4.5V
1330pF @ 20V
±20V
-
1.25W (Ta), 58W (Tc)
10.5 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD5406NT4G
ON Semiconductor

MOSFET N-CH 40V 70A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 32V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque732.228
MOSFET (Metal Oxide)
40V
12.2A (Ta), 70A (Tc)
5V, 10V
3.5V @ 250µA
45nC @ 10V
2500pF @ 32V
±20V
-
3W (Ta), 100W (Tc)
10 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD5406NG
ON Semiconductor

MOSFET N-CH 40V 70A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 32V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque180.180
MOSFET (Metal Oxide)
40V
12.2A (Ta), 70A (Tc)
5V, 10V
3.5V @ 250µA
45nC @ 10V
2500pF @ 32V
±20V
-
3W (Ta), 100W (Tc)
10 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD50N03RT4G
ON Semiconductor

MOSFET N-CH 25V 7.8A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque392.580
MOSFET (Metal Oxide)
25V
7.8A (Ta), 45A (Tc)
4.5V, 11.5V
2V @ 250µA
15nC @ 11.5V
750pF @ 12V
±20V
-
1.5W (Ta), 50W (Tc)
12 mOhm @ 30A, 11.5V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
NTD50N03RT4
ON Semiconductor

MOSFET N-CH 25V 7.8A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque4.864
MOSFET (Metal Oxide)
25V
7.8A (Ta), 45A (Tc)
4.5V, 11.5V
2V @ 250µA
15nC @ 11.5V
750pF @ 12V
±20V
-
1.5W (Ta), 50W (Tc)
12 mOhm @ 30A, 11.5V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD50N03RG
ON Semiconductor

MOSFET N-CH 25V 7.8A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque167.004
MOSFET (Metal Oxide)
25V
7.8A (Ta), 45A (Tc)
4.5V, 11.5V
2V @ 250µA
15nC @ 11.5V
750pF @ 12V
±20V
-
1.5W (Ta), 50W (Tc)
12 mOhm @ 30A, 11.5V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD50N03R-35G
ON Semiconductor

MOSFET N-CH 25V 7.8A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
pacote: TO-251-3 Stub Leads, IPak
Estoque60.252
MOSFET (Metal Oxide)
25V
7.8A (Ta), 45A (Tc)
4.5V, 11.5V
2V @ 250µA
15nC @ 11.5V
750pF @ 12V
±20V
-
1.5W (Ta), 50W (Tc)
12 mOhm @ 30A, 11.5V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
hot NTD50N03R-1G
ON Semiconductor

MOSFET N-CH 25V 7.8A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
pacote: TO-251-3 Stub Leads, IPak
Estoque15.264
MOSFET (Metal Oxide)
25V
7.8A (Ta), 45A (Tc)
4.5V, 11.5V
2V @ 250µA
15nC @ 11.5V
750pF @ 12V
±20V
-
1.5W (Ta), 50W (Tc)
12 mOhm @ 30A, 11.5V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
hot NTD50N03R-035
ON Semiconductor

MOSFET N-CH 25V 7.8A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
pacote: TO-251-3 Stub Leads, IPak
Estoque46.800
MOSFET (Metal Oxide)
25V
7.8A (Ta), 45A (Tc)
4.5V, 11.5V
2V @ 250µA
15nC @ 11.5V
750pF @ 12V
±20V
-
1.5W (Ta), 50W (Tc)
12 mOhm @ 30A, 11.5V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
NTD50N03R-001
ON Semiconductor

MOSFET N-CH 25V 7.8A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
pacote: TO-251-3 Stub Leads, IPak
Estoque2.944
MOSFET (Metal Oxide)
25V
7.8A (Ta), 45A (Tc)
4.5V, 11.5V
2V @ 250µA
15nC @ 11.5V
750pF @ 12V
±20V
-
1.5W (Ta), 50W (Tc)
12 mOhm @ 30A, 11.5V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
NTD50N03R
ON Semiconductor

MOSFET N-CH 25V 7.8A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque7.152
MOSFET (Metal Oxide)
25V
7.8A (Ta), 45A (Tc)
4.5V, 11.5V
2V @ 250µA
15nC @ 11.5V
750pF @ 12V
±20V
-
1.5W (Ta), 50W (Tc)
12 mOhm @ 30A, 11.5V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD4815NT4G
ON Semiconductor

MOSFET N-CH 30V 6.9A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque441.324
MOSFET (Metal Oxide)
30V
6.9A (Ta), 35A (Tc)
4.5V, 11.5V
2.5V @ 250µA
6.6nC @ 4.5V
770pF @ 12V
±20V
-
1.26W (Ta), 32.6W (Tc)
15 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD4815N-1G
ON Semiconductor

MOSFET N-CH 30V 6.9A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
pacote: TO-251-3 Stub Leads, IPak
Estoque62.868
MOSFET (Metal Oxide)
30V
6.9A (Ta), 35A (Tc)
4.5V, 11.5V
2.5V @ 250µA
6.6nC @ 4.5V
770pF @ 12V
±20V
-
1.26W (Ta), 32.6W (Tc)
15 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
hot NTD4813NT4G
ON Semiconductor

MOSFET N-CH 30V 7.6A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.27W (Ta), 35.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque367.284
MOSFET (Metal Oxide)
30V
7.6A (Ta), 40A (Tc)
4.5V, 11.5V
2.5V @ 250µA
7.9nC @ 4.5V
860pF @ 12V
±20V
-
1.27W (Ta), 35.3W (Tc)
13 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD4810N-35G
ON Semiconductor

MOSFET N-CH 30V 8.6A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
pacote: TO-251-3 Stub Leads, IPak
Estoque180.000
MOSFET (Metal Oxide)
30V
9A (Ta), 54A (Tc)
4.5V, 11.5V
2.5V @ 250µA
11nC @ 4.5V
1350pF @ 12V
±20V
-
1.4W (Ta), 50W (Tc)
10 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
hot NTD4810N-1G
ON Semiconductor

MOSFET N-CH 30V 8.6A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque248.136
MOSFET (Metal Oxide)
30V
9A (Ta), 54A (Tc)
4.5V, 11.5V
2.5V @ 250µA
11nC @ 4.5V
1350pF @ 12V
±20V
-
1.4W (Ta), 50W (Tc)
10 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA