Página 43 - ON Semiconductor Produtos - Diodos - Retificadores - Simples

Nº de peças	Fabricante	Descrição	pacote	Estoque	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
DSK10B-BT	ON Semiconductor	DIODE GEN PURP 100V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: Axial	Estoque4.176	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Through Hole	Axial	-	150°C (Max)
DSK10B-AT1	ON Semiconductor	DIODE GEN PURP 100V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: Axial	Estoque6.592	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Through Hole	Axial	-	150°C (Max)
DSF10TC-BT	ON Semiconductor	DIODE GEN PURP 200V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: DO-204AL, DO-41, Axial	Estoque2.256	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DSF10TC-AT1	ON Semiconductor	DIODE GEN PURP 200V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: DO-204AL, DO-41, Axial	Estoque3.440	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DSF10TB-BT	ON Semiconductor	DIODE GEN PURP 100V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: DO-204AL, DO-41, Axial	Estoque7.120	100V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DSF10TB-AT1	ON Semiconductor	DIODE GEN PURP 100V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: DO-204AL, DO-41, Axial	Estoque6.976	100V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DSE010-TR-E	ON Semiconductor	DIODE GEN PURP 80V 100MA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 125°C	pacote: -	Estoque2.736	80V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	3pF @ 0.5V, 1MHz	-	-	-	-55°C ~ 125°C
DLN10C-BT	ON Semiconductor	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R-1 (Axial) Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: R-1 (Axial)	Estoque3.568	200V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Through Hole	R-1 (Axial)	-	150°C (Max)
DLN10C-AT1	ON Semiconductor	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R-1 (Axial) Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: R-1 (Axial)	Estoque2.576	200V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Through Hole	R-1 (Axial)	-	150°C (Max)
DLM10E-AT1	ON Semiconductor	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: DO-204AL, DO-41, Axial	Estoque7.824	400V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DLA11C-TR-E	ON Semiconductor	DIODE GEN PURP 200V 1.1A 2SMD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1.1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: 2-SMD	Estoque3.248	200V	1.1A	980mV @ 1.1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	-	Surface Mount	2-SMD	-	150°C (Max)
SB10-05A3	ON Semiconductor	DIODE SCHOTTKY 50V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 580mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1mA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: 125°C (Max)	pacote: DO-204AL, DO-41, Axial	Estoque2.048	50V	1A	580mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1mA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	125°C (Max)
SB10-05A2	ON Semiconductor	DIODE SCHOTTKY 50V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 580mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1mA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: 125°C (Max)	pacote: DO-204AL, DO-41, Axial	Estoque6.512	50V	1A	580mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1mA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	125°C (Max)
SB10-03A3	ON Semiconductor	DIODE SCHOTTKY 30V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: 125°C (Max)	pacote: DO-204AL, DO-41, Axial	Estoque7.760	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1mA @ 30V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	125°C (Max)
SB10-03A2	ON Semiconductor	DIODE SCHOTTKY 30V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: 150°C (Max)	pacote: DO-204AL, DO-41, Axial	Estoque4.768	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1mA @ 30V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	150°C (Max)
RD0504T-H	ON Semiconductor	DIODE GEN PURP 400V 5A TP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 20µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TP Operating Temperature - Junction: 150°C (Max)	pacote: TO-251-3 Short Leads, IPak, TO-251AA	Estoque4.000	400V	5A	1.5V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	20µA @ 400V	-	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TP	150°C (Max)
DSK10E	ON Semiconductor	DIODE GEN PURP 400V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R-1 (Axial) Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: R-1 (Axial)	Estoque4.512	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Through Hole	R-1 (Axial)	-	150°C (Max)
DSK10C	ON Semiconductor	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R-1 (Axial) Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: R-1 (Axial)	Estoque2.080	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Through Hole	R-1 (Axial)	-	150°C (Max)
DSK10B	ON Semiconductor	DIODE GEN PURP 100V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: Axial	Estoque7.024	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Through Hole	Axial	-	150°C (Max)
DSF10TC	ON Semiconductor	DIODE GEN PURP 200V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: DO-204AL, DO-41, Axial	Estoque4.048	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DSF10TB	ON Semiconductor	DIODE GEN PURP 100V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: DO-204AL, DO-41, Axial	Estoque7.872	100V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DSA26G	ON Semiconductor	DIODE GEN PURP 600V 2.6A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2.6A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2.6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: Axial	Estoque4.864	600V	2.6A	1.05V @ 2.6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Through Hole	Axial	-	150°C (Max)
DSA17G	ON Semiconductor	DIODE GEN PURP 600V 1.7A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.7A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: Axial	Estoque2.880	600V	1.7A	1.05V @ 1.7A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Through Hole	Axial	-	150°C (Max)
DS135AE	ON Semiconductor	DIODE GEN PURP 100V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: DO-204AL, DO-41, Axial	Estoque3.360	100V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DS135AD	ON Semiconductor	DIODE GEN PURP 200V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: DO-204AL, DO-41, Axial	Estoque2.304	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DS135AC	ON Semiconductor	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: DO-204AL, DO-41, Axial	Estoque7.136	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DLM10E	ON Semiconductor	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: DO-204AL, DO-41, Axial	Estoque3.488	400V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)
DLM10C-AT1	ON Semiconductor	DIODE GEN PURP 200V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacote: DO-204AL, DO-41, Axial	Estoque4.800	200V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	-	150°C (Max)

DSK10B-BT

ON Semiconductor

DIODE GEN PURP 100V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: Axial

Estoque4.176

100V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Through Hole

Axial

-

150°C (Max)

DSK10B-AT1

ON Semiconductor

DIODE GEN PURP 100V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: Axial

Estoque6.592

100V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Through Hole

Axial

-

150°C (Max)

DSF10TC-BT

ON Semiconductor

DIODE GEN PURP 200V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: DO-204AL, DO-41, Axial

Estoque2.256

200V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 200V

-

Through Hole

DO-204AL, DO-41, Axial

-

150°C (Max)

DSF10TC-AT1

ON Semiconductor

DIODE GEN PURP 200V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: DO-204AL, DO-41, Axial

Estoque3.440

200V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 200V

-

Through Hole

DO-204AL, DO-41, Axial

-

150°C (Max)

DSF10TB-BT

ON Semiconductor

DIODE GEN PURP 100V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: DO-204AL, DO-41, Axial

Estoque7.120

100V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Through Hole

DO-204AL, DO-41, Axial

-

150°C (Max)

DSF10TB-AT1

ON Semiconductor

DIODE GEN PURP 100V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: DO-204AL, DO-41, Axial

Estoque6.976

100V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Through Hole

DO-204AL, DO-41, Axial

-

150°C (Max)

DSE010-TR-E

ON Semiconductor

DIODE GEN PURP 80V 100MA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 125°C

pacote: -

Estoque2.736

80V

100mA

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

500nA @ 80V

3pF @ 0.5V, 1MHz

-

-55°C ~ 125°C

DLN10C-BT

ON Semiconductor

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: R-1 (Axial)
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: R-1 (Axial)

Estoque3.568

200V

1A

980mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

-

Through Hole

R-1 (Axial)

-

150°C (Max)

DLN10C-AT1

ON Semiconductor

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: R-1 (Axial)
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: R-1 (Axial)

Estoque2.576

200V

1A

980mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

-

Through Hole

R-1 (Axial)

-

150°C (Max)

DLM10E-AT1

ON Semiconductor

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: DO-204AL, DO-41, Axial

Estoque7.824

400V

1A

980mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

-

Through Hole

DO-204AL, DO-41, Axial

-

150°C (Max)

DLA11C-TR-E

ON Semiconductor

DIODE GEN PURP 200V 1.1A 2SMD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.1A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1.1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: 2-SMD

Estoque3.248

200V

1.1A

980mV @ 1.1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 200V

-

Surface Mount

2-SMD

-

150°C (Max)

SB10-05A3

ON Semiconductor

DIODE SCHOTTKY 50V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1mA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)

pacote: DO-204AL, DO-41, Axial

Estoque2.048

50V

1A

580mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

1mA @ 50V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

125°C (Max)

SB10-05A2

ON Semiconductor

DIODE SCHOTTKY 50V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1mA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)

pacote: DO-204AL, DO-41, Axial

Estoque6.512

50V

1A

580mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

1mA @ 50V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

125°C (Max)

SB10-03A3

ON Semiconductor

DIODE SCHOTTKY 30V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)

pacote: DO-204AL, DO-41, Axial

Estoque7.760

30V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

1mA @ 30V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

125°C (Max)

SB10-03A2

ON Semiconductor

DIODE SCHOTTKY 30V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: 150°C (Max)

pacote: DO-204AL, DO-41, Axial

Estoque4.768

30V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

1mA @ 30V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

150°C (Max)

RD0504T-H

ON Semiconductor

DIODE GEN PURP 400V 5A TP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 20µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP
Operating Temperature - Junction: 150°C (Max)

pacote: TO-251-3 Short Leads, IPak, TO-251AA

Estoque4.000

400V

5A

1.5V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

20µA @ 400V

-

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

TP

150°C (Max)

DSK10E

ON Semiconductor

DIODE GEN PURP 400V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: R-1 (Axial)
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: R-1 (Axial)

Estoque4.512

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 400V

-

Through Hole

R-1 (Axial)

-

150°C (Max)

DSK10C

ON Semiconductor

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: R-1 (Axial)
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: R-1 (Axial)

Estoque2.080

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 200V

-

Through Hole

R-1 (Axial)

-

150°C (Max)

DSK10B

ON Semiconductor

DIODE GEN PURP 100V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: Axial

Estoque7.024

100V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Through Hole

Axial

-

150°C (Max)

DSF10TC

ON Semiconductor

DIODE GEN PURP 200V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: DO-204AL, DO-41, Axial

Estoque4.048

200V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 200V

-

Through Hole

DO-204AL, DO-41, Axial

-

150°C (Max)

DSF10TB

ON Semiconductor

DIODE GEN PURP 100V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: DO-204AL, DO-41, Axial

Estoque7.872

100V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Through Hole

DO-204AL, DO-41, Axial

-

150°C (Max)

DSA26G

ON Semiconductor

DIODE GEN PURP 600V 2.6A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2.6A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2.6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: Axial

Estoque4.864

600V

2.6A

1.05V @ 2.6A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

-

Through Hole

Axial

-

150°C (Max)

DSA17G

ON Semiconductor

DIODE GEN PURP 600V 1.7A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.7A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: Axial

Estoque2.880

600V

1.7A

1.05V @ 1.7A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

-

Through Hole

Axial

-

150°C (Max)

DS135AE

ON Semiconductor

DIODE GEN PURP 100V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: DO-204AL, DO-41, Axial

Estoque3.360

100V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Through Hole

DO-204AL, DO-41, Axial

-

150°C (Max)

DS135AD

ON Semiconductor

DIODE GEN PURP 200V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: DO-204AL, DO-41, Axial

Estoque2.304

200V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 200V

-

Through Hole

DO-204AL, DO-41, Axial

-

150°C (Max)

DS135AC

ON Semiconductor

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: DO-204AL, DO-41, Axial

Estoque7.136

400V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 400V

-

Through Hole

DO-204AL, DO-41, Axial

-

150°C (Max)

DLM10E

ON Semiconductor

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: DO-204AL, DO-41, Axial

Estoque3.488

400V

1A

980mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

-

Through Hole

DO-204AL, DO-41, Axial

-

150°C (Max)

DLM10C-AT1

ON Semiconductor

DIODE GEN PURP 200V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacote: DO-204AL, DO-41, Axial

Estoque4.800

200V

1A

980mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

-

Through Hole

DO-204AL, DO-41, Axial

-

150°C (Max)