Microsemi Corporation Produtos

APT20GN60BDQ1G

Microsemi Corporation

IGBT 600V 40A 136W TO247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
• Power - Max: 136W
• Switching Energy: 230µJ (on), 580µJ (off)
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: 9ns/140ns
• Test Condition: 400V, 20A, 4.3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

pacote: TO-247-3

APTGL60DH120T3G

Microsemi Corporation

MOD IGBT 1200V 80A SP3

• IGBT Type: Trench Field Stop
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 80A
• Power - Max: 280W
• Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
• Current - Collector Cutoff (Max): 250µA
• Input Capacitance (Cies) @ Vce: 2.77nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Supplier Device Package: SP3

pacote: SP3

JAN2N6790U

Microsemi Corporation

MOSFET N-CH 18-LCC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 800mW (Tc)
• Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 18-ULCC (9.14x7.49)
• Package / Case: 18-BQFN Exposed Pad

pacote: 18-BQFN Exposed Pad

APTM100DAM90G

Microsemi Corporation

MOSFET N-CH 1000V 78A SP6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 78A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1250W (Tc)
• Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SP6
• Package / Case: SP6

pacote: SP6

APT12057B2LLG

Microsemi Corporation

MOSFET N-CH 1200V 22A T-MAX

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 690W (Tc)
• Rds On (Max) @ Id, Vgs: 570 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: T-MAX? [B2]
• Package / Case: TO-247-3

pacote: TO-247-3

2N2605

Microsemi Corporation

TRANS PNP 60V 0.03A TO-46

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 30mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 10nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
• Power - Max: 400mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-206AB, TO-46-3 Metal Can
• Supplier Device Package: TO-46-3

pacote: TO-206AB, TO-46-3 Metal Can

1N2838B

Microsemi Corporation

DIODE ZENER 100V 50W TO204AD

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±5%
• Power - Max: 50W
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 76V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-204AD
• Supplier Device Package: TO-204AD (TO-3)

pacote: TO-204AD

CDLL5545

Microsemi Corporation

DIODE ZENER 30V 500MW DO213AB

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±20%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 24V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

pacote: DO-213AB, MELF

1N4750AUR

Microsemi Corporation

DIODE ZENER 27V 1W DO213AB

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 20.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

pacote: DO-213AB, MELF

M2S050T-FGG896ES

Microsemi Corporation

IC SOC ENG SMPL MCU/FPGA 896FBGA

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 256KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 50K Logic Modules
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 896-FBGA
• Supplier Device Package: 896-FBGA (31x31)

pacote: 896-FBGA

A2F200M3F-FG256I

Microsemi Corporation

IC FPGA 200K GATES 256KB 256-BGA

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 256KB
• RAM Size: 64KB
• Peripherals: DMA, POR, WDT
• Connectivity: EBI/EMI, Ethernet, I2C, SPI, UART/USART
• Speed: 80MHz
• Primary Attributes: ProASIC?3 FPGA, 200K Gates, 4608 D-Flip-Flops
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 256-LBGA
• Supplier Device Package: 256-FPBGA (17x17)

pacote: 256-LBGA

M2S010-1FGG484

Microsemi Corporation

IC FPGA SOC 10K LUTS 484FBGA

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 256KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 10K Logic Modules
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

pacote: 484-BGA

M2GL150T-1FCVG484I

Microsemi Corporation

IC FPGA 248 I/O 484VFBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 146124
• Total RAM Bits: 5120000
• Number of I/O: 248
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 484-BFBGA
• Supplier Device Package: 484-BGA

pacote: 484-BFBGA

MRT100KP40AE3

Microsemi Corporation

TVS DIODE 40VWM 78.6VC CASE5A

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 40V
• Voltage - Breakdown (Min): 44.4V
• Voltage - Clamping (Max) @ Ipp: 78.6V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 100000W (100kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

pacote: DO-204AR, Axial

MP5KE8.0CAE3

Microsemi Corporation

TVS DIODE 8VWM 13.6VC DO41

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 8V
• Voltage - Breakdown (Min): 8.89V
• Voltage - Clamping (Max) @ Ipp: 13.6V
• Current - Peak Pulse (10/1000µs): 36.7A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacote: DO-204AL, DO-41, Axial

MXPLAD15KP160AE3

Microsemi Corporation

TVS DIODE 160VWM 259VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 160V
• Voltage - Breakdown (Min): 178V
• Voltage - Clamping (Max) @ Ipp: 259V
• Current - Peak Pulse (10/1000µs): 58A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

pacote: Nonstandard SMD

MXLPLAD18KP58CAE3

Microsemi Corporation

TVS DIODE 93.6VC 193A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 58V
• Voltage - Breakdown (Min): 64.4V
• Voltage - Clamping (Max) @ Ipp: 93.6V
• Current - Peak Pulse (10/1000µs): 193A
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

pacote: Nonstandard SMD

JANTX1N6467US

Microsemi Corporation

TVS DIODE 40.3VWM 63.5VC EMELF

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 40.3V
• Voltage - Breakdown (Min): 43.7V
• Voltage - Clamping (Max) @ Ipp: 63.5V
• Current - Peak Pulse (10/1000µs): 45A (8/20µs)
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: E-MELF
• Supplier Device Package: -

pacote: E-MELF

MXP5KE120CA

Microsemi Corporation

TVS DIODE 120VWM 193VC DO41

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 120V
• Voltage - Breakdown (Min): 133V
• Voltage - Clamping (Max) @ Ipp: 193V
• Current - Peak Pulse (10/1000µs): 2A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

pacote: DO-204AL, DO-41, Axial

MXP6KE68CAE3

Microsemi Corporation

TVS DIODE 58.1VWM 92VC T18

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 58.1V
• Voltage - Breakdown (Min): 64.6V
• Voltage - Clamping (Max) @ Ipp: 92V
• Current - Peak Pulse (10/1000µs): 6.5A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

pacote: T-18, Axial

MXLSMCJ60AE3

Microsemi Corporation

TVS DIODE 60VWM 96.8VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 60V
• Voltage - Breakdown (Min): 66.7V
• Voltage - Clamping (Max) @ Ipp: 96.8V
• Current - Peak Pulse (10/1000µs): 15.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

pacote: DO-214AB, SMC

MXLSMBJ20AE3

Microsemi Corporation

TVS DIODE 20VWM 32.4VC DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 20V
• Voltage - Breakdown (Min): 22.2V
• Voltage - Clamping (Max) @ Ipp: 32.4V
• Current - Peak Pulse (10/1000µs): 18.5A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

pacote: DO-214AA, SMB

MASMLG100CA

Microsemi Corporation

TVS DIODE 100VWM 162VC DO215AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 100V
• Voltage - Breakdown (Min): 111V
• Voltage - Clamping (Max) @ Ipp: 162V
• Current - Peak Pulse (10/1000µs): 18.6A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMLG (DO-215AB)

pacote: DO-215AB, SMC Gull Wing

LX5541LL

Microsemi Corporation

WIRELESS LAN POWER AMPLIFIER

• Frequency: 2.3GHz ~ 2.5GHz
• P1dB: -
• Gain: 27dB
• Noise Figure: -
• RF Type: 802.11b/g/n
• Voltage - Supply: 3.3V
• Current - Supply: 145mA
• Test Frequency: 2.5GHz
• Package / Case: -
• Supplier Device Package: -

pacote: -

BR231D-450C2-28V

Microsemi Corporation

RELAY

• Relay Type: -
• Coil Type: -
• Coil Current: -
• Coil Voltage: -
• Contact Form: -
• Contact Rating (Current): -
• Switching Voltage: -
• Turn On Voltage (Max): -
• Turn Off Voltage (Min): -
• Operate Time: -
• Release Time: -
• Features: -
• Mounting Type: -
• Termination Style: -

pacote: -

BR246-320B1-28V-020M

Microsemi Corporation

RELAY

• Relay Type: -
• Coil Type: -
• Coil Current: -
• Coil Voltage: -
• Contact Form: -
• Contact Rating (Current): -
• Switching Voltage: -
• Turn On Voltage (Max): -
• Turn Off Voltage (Min): -
• Operate Time: -
• Release Time: -
• Features: -
• Mounting Type: -
• Termination Style: -

pacote: -

BR246-20C2-6V-004L

Microsemi Corporation

RELAY

• Relay Type: -
• Coil Type: -
• Coil Current: -
• Coil Voltage: -
• Contact Form: -
• Contact Rating (Current): -
• Switching Voltage: -
• Turn On Voltage (Max): -
• Turn Off Voltage (Min): -
• Operate Time: -
• Release Time: -
• Features: -
• Mounting Type: -
• Termination Style: -

pacote: -

2N1016C

Microsemi Corporation

TRANS NPN 150V 7.5A TO82

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 7.5 A
• Voltage - Collector Emitter Breakdown (Max): 150 V
• Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 5A
• Current - Collector Cutoff (Max): 1mA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 4V
• Power - Max: 150 W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: TO-82

pacote: -

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