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Microchip Technology Produtos - Transistores - FET, MOSFET - Simples

Registros 441
Página  14/16
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TN0106N3-G-P013
Microchip Technology

MOSFET N-CH 60V 350MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
pacote: TO-226-3, TO-92-3 (TO-226AA)
Estoque3.216
MOSFET (Metal Oxide)
60V
350mA (Tj)
4.5V, 10V
2V @ 500µA
-
60pF @ 25V
±20V
-
1W (Tc)
3 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TN0106N3-G-P003
Microchip Technology

MOSFET N-CH 60V 350MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
pacote: TO-226-3, TO-92-3 (TO-226AA)
Estoque6.544
MOSFET (Metal Oxide)
60V
350mA (Tj)
4.5V, 10V
2V @ 500µA
-
60pF @ 25V
±20V
-
1W (Tc)
3 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
DN2540N3-G-P003
Microchip Technology

MOSFET N-CH 400V 0.12A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92 (TO-226)
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
pacote: TO-226-3, TO-92-3 (TO-226AA)
Estoque3.808
MOSFET (Metal Oxide)
400V
120mA (Tj)
0V
-
-
300pF @ 25V
±20V
Depletion Mode
1W (Tc)
25 Ohm @ 120mA, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-92 (TO-226)
TO-226-3, TO-92-3 (TO-226AA)
hot MIC94030BM4 TR
Microchip Technology

MOSFET P-CH 16V 1A SOT-143

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 12V
  • Vgs (Max): 16V
  • FET Feature: -
  • Power Dissipation (Max): 568mW (Ta)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-143
  • Package / Case: TO-253-4, TO-253AA
pacote: TO-253-4, TO-253AA
Estoque80.100
MOSFET (Metal Oxide)
16V
1A (Ta)
2.7V, 10V
1.4V @ 250µA
-
100pF @ 12V
16V
-
568mW (Ta)
450 mOhm @ 100mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-143
TO-253-4, TO-253AA
hot TN5335K1-G
Microchip Technology

MOSFET N-CH 350V 0.11A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350V
  • Current - Continuous Drain (Id) @ 25°C: 110mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 15 Ohm @ 200mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23 (TO-236AB)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque14.496
MOSFET (Metal Oxide)
350V
110mA (Tj)
3V, 10V
2V @ 1mA
-
110pF @ 25V
±20V
-
360mW (Ta)
15 Ohm @ 200mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23 (TO-236AB)
TO-236-3, SC-59, SOT-23-3
DN2535N3-G-P013
Microchip Technology

MOSFET N-CH 350V 0.12A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350V
  • Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92 (TO-226)
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
pacote: TO-226-3, TO-92-3 (TO-226AA)
Estoque2.752
MOSFET (Metal Oxide)
350V
120mA (Tj)
0V
-
-
300pF @ 25V
±20V
Depletion Mode
1W (Tc)
25 Ohm @ 120mA, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-92 (TO-226)
TO-226-3, TO-92-3 (TO-226AA)
DN2535N3-G-P003
Microchip Technology

MOSFET N-CH 350V 0.12A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350V
  • Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92 (TO-226)
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
pacote: TO-226-3, TO-92-3 (TO-226AA)
Estoque7.664
MOSFET (Metal Oxide)
350V
120mA (Tj)
0V
-
-
300pF @ 25V
±20V
Depletion Mode
1W (Tc)
25 Ohm @ 120mA, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-92 (TO-226)
TO-226-3, TO-92-3 (TO-226AA)
VN0106N3-G-P003
Microchip Technology

MOSFET N-CH 60V 350MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Estoque3.568
MOSFET (Metal Oxide)
60V
350mA (Tj)
5V, 10V
2.4V @ 1mA
-
65pF @ 25V
±20V
-
1W (Tc)
3 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
VN0104N3-G-P013
Microchip Technology

MOSFET N-CH 40V 350MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Estoque3.792
MOSFET (Metal Oxide)
40V
350mA (Tj)
5V, 10V
2.4V @ 1mA
-
65pF @ 25V
±20V
-
1W (Tc)
3 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TP2104N3-G-P003
Microchip Technology

MOSFET P-CH 40V 0.175A TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
pacote: TO-226-3, TO-92-3 (TO-226AA)
Estoque7.280
MOSFET (Metal Oxide)
40V
175mA (Tj)
4.5V, 10V
2V @ 1mA
-
60pF @ 25V
±20V
-
740mW (Ta)
6 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot TP5322N8-G
Microchip Technology

MOSFET P-CH 220V 0.26A SOT89-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 220V
  • Current - Continuous Drain (Id) @ 25°C: 260mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 200mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-243AA (SOT-89)
  • Package / Case: TO-243AA
pacote: TO-243AA
Estoque131.784
MOSFET (Metal Oxide)
220V
260mA (Tj)
4.5V, 10V
2.4V @ 1mA
-
110pF @ 25V
±20V
-
1.6W (Ta)
12 Ohm @ 200mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA
TN5325N3-G-P002
Microchip Technology

MOSFET N-CH 250V 0.215A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 215mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
pacote: TO-226-3, TO-92-3 (TO-226AA)
Estoque7.440
MOSFET (Metal Oxide)
250V
215mA (Ta)
4.5V, 10V
2V @ 1mA
-
110pF @ 25V
±20V
-
740mW (Ta)
7 Ohm @ 1A, 10V
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot TN2130K1-G
Microchip Technology

MOSFET N-CH 300V 0.085A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Tc)
  • Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque20.160
MOSFET (Metal Oxide)
300V
85mA (Tj)
4.5V
2.4V @ 1mA
-
50pF @ 25V
±20V
-
360mW (Tc)
25 Ohm @ 120mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
hot TN5325N8-G
Microchip Technology

MOSFET N-CH 250V 0.316A SOT89-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 316mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-243AA (SOT-89)
  • Package / Case: TO-243AA
pacote: TO-243AA
Estoque72.360
MOSFET (Metal Oxide)
250V
316mA (Tj)
4.5V, 10V
2V @ 1mA
-
110pF @ 25V
±20V
-
1.6W (Ta)
7 Ohm @ 1A, 10V
-
Surface Mount
TO-243AA (SOT-89)
TO-243AA
TP5322K1-G
Microchip Technology

MOSFET P-CH 220V 0.12A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 220V
  • Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 200mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque4.400
MOSFET (Metal Oxide)
220V
120mA (Tj)
4.5V, 10V
2.4V @ 1mA
-
110pF @ 25V
±20V
-
360mW (Ta)
12 Ohm @ 200mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
VN10KN3-G-P014
Microchip Technology

MOSFET N-CH 60V 310MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Estoque2.096
MOSFET (Metal Oxide)
60V
310mA (Tj)
5V, 10V
2.5V @ 1mA
-
60pF @ 25V
±30V
-
1W (Tc)
5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
VN10KN3-G-P013
Microchip Technology

MOSFET N-CH 60V 310MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Estoque4.384
MOSFET (Metal Oxide)
60V
310mA (Tj)
5V, 10V
2.5V @ 1mA
-
60pF @ 25V
±30V
-
1W (Tc)
5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
VN10KN3-G-P003
Microchip Technology

MOSFET N-CH 60V 310MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Estoque3.392
MOSFET (Metal Oxide)
60V
310mA (Tj)
5V, 10V
2.5V @ 1mA
-
60pF @ 25V
±30V
-
1W (Tc)
5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
VN10KN3-G-P002
Microchip Technology

MOSFET N-CH 60V 310MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Estoque6.816
MOSFET (Metal Oxide)
60V
310mA (Tj)
5V, 10V
2.5V @ 1mA
-
60pF @ 25V
±30V
-
1W (Tc)
5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot TN5325K1-G
Microchip Technology

MOSFET N-CH 250V SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque77.280
MOSFET (Metal Oxide)
250V
150mA (Ta)
4.5V, 10V
2V @ 1mA
-
110pF @ 25V
±20V
-
360mW (Ta)
7 Ohm @ 1A, 10V
-
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
LND150N3-G-P014
Microchip Technology

MOSFET N-CH 500V 30MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
pacote: TO-226-3, TO-92-3 (TO-226AA)
Estoque2.048
MOSFET (Metal Oxide)
500V
30mA (Tj)
0V
-
-
10pF @ 25V
±20V
Depletion Mode
740mW (Ta)
1000 Ohm @ 500µA, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
LND150N3-G-P013
Microchip Technology

MOSFET N-CH 500V 30MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
pacote: TO-226-3, TO-92-3 (TO-226AA)
Estoque6.448
MOSFET (Metal Oxide)
500V
30mA (Tj)
0V
-
-
10pF @ 25V
±20V
Depletion Mode
740mW (Ta)
1000 Ohm @ 500µA, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
LND150N3-G-P003
Microchip Technology

MOSFET N-CH 500V 30MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
pacote: TO-226-3, TO-92-3 (TO-226AA)
Estoque3.792
MOSFET (Metal Oxide)
500V
30mA (Tj)
0V
-
-
10pF @ 25V
±20V
Depletion Mode
740mW (Ta)
1000 Ohm @ 500µA, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
LND150N3-G-P002
Microchip Technology

MOSFET N-CH 500V 30MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
pacote: TO-226-3, TO-92-3 (TO-226AA)
Estoque5.216
MOSFET (Metal Oxide)
500V
30mA (Tj)
0V
-
-
10pF @ 25V
±20V
Depletion Mode
740mW (Ta)
1000 Ohm @ 500µA, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
MIC94051YM4-TR
Microchip Technology

MOSFET P-CH 6V 1.8A 8MSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 6V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V
  • Vgs (Max): 6V
  • FET Feature: -
  • Power Dissipation (Max): 568mW (Ta)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-143
  • Package / Case: TO-253-4, TO-253AA
pacote: TO-253-4, TO-253AA
Estoque3.904
MOSFET (Metal Oxide)
6V
1.8A (Ta)
1.8V, 4.5V
1.2V @ 250µA
-
600pF @ 5.5V
6V
-
568mW (Ta)
160 mOhm @ 100mA, 4.5V
-40°C ~ 150°C (TJ)
Surface Mount
SOT-143
TO-253-4, TO-253AA
VN2222LL-G-P013
Microchip Technology

MOSFET N-CH 60V 0.23A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta), 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Estoque7.952
MOSFET (Metal Oxide)
60V
230mA (Tj)
5V, 10V
2.5V @ 1mA
-
60pF @ 25V
±30V
-
400mW (Ta), 1W (Tc)
7.5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
VN2222LL-G-P003
Microchip Technology

MOSFET N-CH 60V 0.23A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta), 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Estoque2.880
MOSFET (Metal Oxide)
60V
230mA (Tj)
5V, 10V
2.5V @ 1mA
-
60pF @ 25V
±30V
-
400mW (Ta), 1W (Tc)
7.5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot LND250K1-G
Microchip Technology

MOSFET N-CH 500V 0.013A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 13mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23 (TO-236AB)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque11.376
MOSFET (Metal Oxide)
500V
13mA (Tj)
0V
-
-
10pF @ 25V
±20V
Depletion Mode
360mW (Ta)
1000 Ohm @ 500µA, 0V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23 (TO-236AB)
TO-236-3, SC-59, SOT-23-3