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IXYS |
IGBT 1700V 24A 250W TO268
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Current - Collector (Ic) (Max): 24A
- Current - Collector Pulsed (Icm): 75A
- Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
- Power - Max: 250W
- Switching Energy: 2.97mJ (on), 790µJ (off)
- Input Type: Standard
- Gate Charge: 140nC
- Td (on/off) @ 25°C: 21ns/336ns
- Test Condition: 850V, 24A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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pacote: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Estoque4.016 |
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IXYS |
IGBT 1200V 58A 195W TO247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 58A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
- Power - Max: 195W
- Switching Energy: 3.8mJ (on), 4.1mJ (off)
- Input Type: Standard
- Gate Charge: 106nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 35A, 27 Ohm, 15V
- Reverse Recovery Time (trr): 350ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOPLUS247?
- Supplier Device Package: ISOPLUS247?
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pacote: ISOPLUS247? |
Estoque7.856 |
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IXYS |
IGBT 330V 180A TO3P
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 330V
- Current - Collector (Ic) (Max): 180A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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pacote: TO-3P-3, SC-65-3 |
Estoque5.952 |
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IXYS |
IGBT 650V 310A 940W TO264
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 310A
- Current - Collector Pulsed (Icm): 860A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
- Power - Max: 940W
- Switching Energy: 3.3mJ (on), 1.88mJ (off)
- Input Type: Standard
- Gate Charge: 425nC
- Td (on/off) @ 25°C: 52ns/220ns
- Test Condition: 400V, 80A, 1 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264 (IXXK)
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pacote: TO-264-3, TO-264AA |
Estoque6.928 |
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IXYS |
IGBT MODULE 1200V 60A
- IGBT Type: PT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 85A
- Power - Max: 290W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
- Current - Collector Cutoff (Max): 500µA
- Input Capacitance (Cies) @ Vce: -
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E3
- Supplier Device Package: E3
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pacote: E3 |
Estoque6.640 |
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IXYS |
IGBT BIMOSFET 1700V 145A SOT227B
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Current - Collector (Ic) (Max): 145A
- Power - Max: 625W
- Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
- Current - Collector Cutoff (Max): 25µA
- Input Capacitance (Cies) @ Vce: 6.93nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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pacote: SOT-227-4, miniBLOC |
Estoque5.760 |
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IXYS |
IGBT MODULE 1200V 12A HEX
- IGBT Type: PT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 17A
- Power - Max: 60W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 9A
- Current - Collector Cutoff (Max): 700µA
- Input Capacitance (Cies) @ Vce: -
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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pacote: E2 |
Estoque3.776 |
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IXYS |
MOSFET N-CH 55V 145A ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
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pacote: ISOPLUS220? |
Estoque5.632 |
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IXYS |
MOSFET N-CH 200V ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
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pacote: ISOPLUS247? |
Estoque7.920 |
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IXYS |
MOSFET N-CH 1KV 22A ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 267nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 416W (Tc)
- Rds On (Max) @ Id, Vgs: 390 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
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pacote: ISOPLUS247? |
Estoque5.088 |
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IXYS |
MOSFET P-CH 200V 24A TO-268
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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pacote: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Estoque5.968 |
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MOSFET N-CH 60V 150A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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pacote: TO-3P-3, SC-65-3 |
Estoque103.464 |
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MOSFET 2N-CH 900V 85A Y3-LI
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 85A
- Rds On (Max) @ Id, Vgs: 76 mOhm @ 65A, 10V
- Vgs(th) (Max) @ Id: 5V @ 30mA
- Gate Charge (Qg) (Max) @ Vgs: 960nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y3-Li
- Supplier Device Package: Y3-Li
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pacote: Y3-Li |
Estoque3.792 |
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MODULE AC CTLR 1600V KAMM-MODUL
- Structure: 1-Phase Controller - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 18A
- Current - On State (It (RMS)) (Max): 28A
- Voltage - Gate Trigger (Vgt) (Max): 1V
- Current - Gate Trigger (Igt) (Max): 65mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 360A, 390A
- Current - Hold (Ih) (Max): 100mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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pacote: Module |
Estoque6.800 |
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MODULE AC CTLR 3PH 800V V2-PACK
- Structure: 3-Phase Controller - All SCRs
- Number of SCRs, Diodes: 6 SCRs
- Voltage - Off State: 800V
- Current - On State (It (AV)) (Max): 27A
- Current - On State (It (RMS)) (Max): 59A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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pacote: Module |
Estoque3.616 |
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DIODE ARRAY SCHOTTKY 30V TO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 510mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 30V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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pacote: TO-220-3 |
Estoque5.904 |
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IXYS |
RECT BRIDGE 3PH 1200V V2-PACK
- Diode Type: Three Phase (Braking)
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 188A
- Voltage - Forward (Vf) (Max) @ If: 2.7V @ 30A
- Current - Reverse Leakage @ Vr: 300µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: V2-PAK
- Supplier Device Package: V2-PAK
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pacote: V2-PAK |
Estoque5.920 |
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IXYS |
RECT BRIDGE 3PH 1400V PWS-E-1
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1400V
- Current - Average Rectified (Io): 248A
- Voltage - Forward (Vf) (Max) @ If: 1.07V @ 80A
- Current - Reverse Leakage @ Vr: 200µA @ 1400V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-E1
- Supplier Device Package: PWS-E1
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pacote: PWS-E1 |
Estoque2.080 |
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IXYS |
3 PHASE/FULL WAVE 74A BRDG RECT
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 74A
- Voltage - Forward (Vf) (Max) @ If: 2.71V @ 30A
- Current - Reverse Leakage @ Vr: 250µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC1
- Supplier Device Package: ECO-PAC1
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pacote: ECO-PAC1 |
Estoque3.952 |
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IXYS |
RECT BRIDGE 3PH 800V ECO-PAC1
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 86A
- Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A
- Current - Reverse Leakage @ Vr: 40µA @ 800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC1
- Supplier Device Package: ECO-PAC1
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pacote: ECO-PAC1 |
Estoque6.256 |
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IXYS |
IC DIODE MODULE BOD 0.9A 2500V
- Voltage - Clamping: 2500V (2.5kV)
- Technology: Mixed Technology
- Number of Circuits: 3
- Number of Circuits: 3
- Applications: High Voltage
- Mounting Type: PCB, Through Hole
- Package / Case: Radial
- Supplier Device Package: BOD
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pacote: Radial |
Estoque7.380 |
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IXYS |
IC DIODE MODULE BOD 1.25A 1900V
- Voltage - Clamping: 1900V (1.9kV)
- Technology: Mixed Technology
- Number of Circuits: 2
- Number of Circuits: 2
- Applications: High Voltage
- Mounting Type: PCB, Through Hole
- Package / Case: Radial
- Supplier Device Package: BOD
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pacote: Radial |
Estoque2.466 |
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IXYS |
DISC IGBT XPT-GENX3 TO-220AB/FP
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 105 A
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: 200 W
- Switching Energy: -
- Input Type: -
- Gate Charge: 30 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 135 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Request a Quote |
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IXYS |
IGBT 2500V 235A PLUS247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 2500 V
- Current - Collector (Ic) (Max): 95 A
- Current - Collector Pulsed (Icm): 235 A
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
- Power - Max: 937 W
- Switching Energy: 8.3mJ (on), 7.3mJ (off)
- Input Type: Standard
- Gate Charge: 147 nC
- Td (on/off) @ 25°C: 15ns/230ns
- Test Condition: 1250V, 25A, 5Ohm, 15V
- Reverse Recovery Time (trr): 220 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PLUS247™-3
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pacote: - |
Request a Quote |
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IXYS |
MOSFET N-CH TO220
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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pacote: - |
Request a Quote |
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IXYS |
BIPOLAR MODULE - THYRISTOR Y4-M
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1.6 kV
- Current - On State (It (AV)) (Max): 181 A
- Current - On State (It (RMS)) (Max): 300 A
- Voltage - Gate Trigger (Vgt) (Max): 2.5 V
- Current - Gate Trigger (Igt) (Max): 150 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
- Current - Hold (Ih) (Max): 200 mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y4-M6
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pacote: - |
Request a Quote |
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IXYS |
MOSFET N-CH 650V 170A SOT227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 27000 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1170W (Tc)
- Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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pacote: - |
Estoque60 |
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IXYS |
MOSFET N-CH 150V 400A PLUS247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Rds On (Max) @ Id, Vgs: 3mOhm @ 200A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247™-3
- Package / Case: TO-247-3 Variant
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pacote: - |
Request a Quote |
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