Página 83 - IXYS Produtos - Transistores - FET, MOSFET - Simples | Heisener Electronics
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IXYS Produtos - Transistores - FET, MOSFET - Simples

Registros 2.558
Página  83/92
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IXTA180N085T7
IXYS

MOSFET N-CH 85V 180A TO-263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 430W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7 (IXTA..7)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
pacote: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Estoque5.488
MOSFET (Metal Oxide)
85V
180A (Tc)
10V
4V @ 250µA
170nC @ 10V
7500pF @ 25V
±20V
-
430W (Tc)
5.5 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7 (IXTA..7)
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IXTA180N085T
IXYS

MOSFET N-CH 85V 180A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 430W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque7.040
MOSFET (Metal Oxide)
85V
180A (Tc)
10V
4V @ 250µA
170nC @ 10V
7500pF @ 25V
±20V
-
430W (Tc)
5.5 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (IXTA)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA180N055T
IXYS

MOSFET N-CH 55V 180A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque5.744
MOSFET (Metal Oxide)
55V
180A (Tc)
-
4V @ 1mA
-
-
-
-
-
-
-
Surface Mount
TO-263 (IXTA)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA160N085T
IXYS

MOSFET N-CH 85V 160A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque3.488
MOSFET (Metal Oxide)
85V
160A (Tc)
10V
4V @ 1mA
164nC @ 10V
6400pF @ 25V
±20V
-
360W (Tc)
6 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (IXTA)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA160N075T7
IXYS

MOSFET N-CH 75V 160A TO-263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7 (IXTA..7)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
pacote: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Estoque4.864
MOSFET (Metal Oxide)
75V
160A (Tc)
10V
4V @ 250µA
112nC @ 10V
4950pF @ 25V
±20V
-
360W (Tc)
6 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7 (IXTA..7)
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IXTA160N075T
IXYS

MOSFET N-CH 75V 160A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque7.712
MOSFET (Metal Oxide)
75V
160A (Tc)
10V
4V @ 250µA
112nC @ 10V
4950pF @ 25V
±20V
-
360W (Tc)
6 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (IXTA)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IXTA152N085T7
IXYS

MOSFET N-CH 85V 152A TO-263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7 (IXTA..7)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
pacote: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Estoque4.512
MOSFET (Metal Oxide)
85V
152A (Tc)
10V
4V @ 250µA
114nC @ 10V
5500pF @ 25V
±20V
-
360W (Tc)
7 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7 (IXTA..7)
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IXTA152N085T
IXYS

MOSFET N-CH 85V 152A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque7.536
MOSFET (Metal Oxide)
85V
152A (Tc)
10V
4V @ 250µA
114nC @ 10V
5500pF @ 25V
±20V
-
360W (Tc)
7 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (IXTA)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA110N055T
IXYS

MOSFET N-CH 55V 110A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque7.632
MOSFET (Metal Oxide)
55V
110A (Tc)
10V
4V @ 100µA
67nC @ 10V
3080pF @ 25V
±20V
-
230W (Tc)
7 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (IXTA)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXKC13N80C
IXYS

MOSFET N-CH 800V 13A ISOPLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS220?
  • Package / Case: ISOPLUS220?
pacote: ISOPLUS220?
Estoque5.008
MOSFET (Metal Oxide)
800V
13A (Tc)
10V
4V @ 1mA
90nC @ 10V
2300pF @ 25V
±20V
Super Junction
-
290 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS220?
ISOPLUS220?
hot IXFX66N50Q2
IXYS

MOSFET N-CH 500V 66A PLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9125pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 735W (Tc)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque35.076
MOSFET (Metal Oxide)
500V
66A (Tc)
10V
4.5V @ 8mA
200nC @ 10V
9125pF @ 25V
±30V
-
735W (Tc)
80 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
PLUS247?-3
TO-247-3
IXFV96N20P
IXYS

MOSFET N-CH 200V 96A PLUS 220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 600W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS220
  • Package / Case: TO-220-3, Short Tab
pacote: TO-220-3, Short Tab
Estoque6.864
MOSFET (Metal Oxide)
200V
96A (Tc)
10V
5V @ 4mA
145nC @ 10V
4800pF @ 25V
±20V
-
600W (Tc)
24 mOhm @ 500mA, 10V
-55°C ~ 175°C (TJ)
Through Hole
PLUS220
TO-220-3, Short Tab
IXFV96N15PS
IXYS

MOSFET N-CH 150V 96A PLUS220-S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PLUS-220SMD
  • Package / Case: PLUS-220SMD
pacote: PLUS-220SMD
Estoque5.936
MOSFET (Metal Oxide)
150V
96A (Tc)
10V
5V @ 4mA
110nC @ 10V
3500pF @ 25V
±20V
-
480W (Tc)
24 mOhm @ 500mA, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PLUS-220SMD
PLUS-220SMD
IXFV96N15P
IXYS

MOSFET N-CH 150V 96A PLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS220
  • Package / Case: TO-220-3, Short Tab
pacote: TO-220-3, Short Tab
Estoque4.544
MOSFET (Metal Oxide)
150V
96A (Tc)
10V
5V @ 4mA
110nC @ 10V
3500pF @ 25V
±20V
-
480W (Tc)
24 mOhm @ 500mA, 10V
-55°C ~ 175°C (TJ)
Through Hole
PLUS220
TO-220-3, Short Tab
IXFV74N20PS
IXYS

MOSFET N-CH 200V 74A PLUS220-S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 37A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PLUS-220SMD
  • Package / Case: PLUS-220SMD
pacote: PLUS-220SMD
Estoque4.496
MOSFET (Metal Oxide)
200V
74A (Tc)
10V
5V @ 4mA
107nC @ 10V
3300pF @ 25V
±20V
-
480W (Tc)
34 mOhm @ 37A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PLUS-220SMD
PLUS-220SMD
IXFV74N20P
IXYS

MOSFET N-CH 200V 74A PLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 37A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS220
  • Package / Case: TO-220-3, Short Tab
pacote: TO-220-3, Short Tab
Estoque3.552
MOSFET (Metal Oxide)
200V
74A (Tc)
10V
5V @ 4mA
107nC @ 10V
3300pF @ 25V
±20V
-
480W (Tc)
34 mOhm @ 37A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PLUS220
TO-220-3, Short Tab
IXFV52N30PS
IXYS

MOSFET N-CH 300V 52A PLUS220-S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 66 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PLUS-220SMD
  • Package / Case: PLUS-220SMD
pacote: PLUS-220SMD
Estoque3.488
MOSFET (Metal Oxide)
300V
52A (Tc)
10V
5V @ 4mA
110nC @ 10V
3490pF @ 25V
±20V
-
400W (Tc)
66 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PLUS-220SMD
PLUS-220SMD
IXFV20N80PS
IXYS

MOSFET N-CH 800V 20A PLUS220SMD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4685pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 520 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PLUS-220SMD
  • Package / Case: PLUS-220SMD
pacote: PLUS-220SMD
Estoque2.512
MOSFET (Metal Oxide)
800V
20A (Tc)
10V
5V @ 4mA
86nC @ 10V
4685pF @ 25V
±30V
-
500W (Tc)
520 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PLUS-220SMD
PLUS-220SMD
IXFV16N80PS
IXYS

MOSFET N-CH 800V 16A PLUS220-S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 460W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PLUS-220SMD
  • Package / Case: PLUS-220SMD
pacote: PLUS-220SMD
Estoque2.528
MOSFET (Metal Oxide)
800V
16A (Tc)
10V
5V @ 4mA
71nC @ 10V
4600pF @ 25V
±30V
-
460W (Tc)
600 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PLUS-220SMD
PLUS-220SMD
IXFV14N80PS
IXYS

MOSFET N-CH 800V 14A PLUS220-S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 720 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PLUS-220SMD
  • Package / Case: PLUS-220SMD
pacote: PLUS-220SMD
Estoque2.288
MOSFET (Metal Oxide)
800V
14A (Tc)
10V
5.5V @ 4mA
61nC @ 10V
3900pF @ 25V
±30V
-
400W (Tc)
720 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PLUS-220SMD
PLUS-220SMD
IXFV14N80P
IXYS

MOSFET N-CH 800V 14A PLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 720 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS220
  • Package / Case: TO-220-3, Short Tab
pacote: TO-220-3, Short Tab
Estoque2.640
MOSFET (Metal Oxide)
800V
14A (Tc)
10V
5.5V @ 4mA
61nC @ 10V
3900pF @ 25V
±30V
-
400W (Tc)
720 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
PLUS220
TO-220-3, Short Tab
IXFV12N80PS
IXYS

MOSFET N-CH 800V 12A PLUS220-S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PLUS-220SMD
  • Package / Case: PLUS-220SMD
pacote: PLUS-220SMD
Estoque6.192
MOSFET (Metal Oxide)
800V
12A (Tc)
10V
5.5V @ 2.5mA
51nC @ 10V
2800pF @ 25V
±30V
-
360W (Tc)
850 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PLUS-220SMD
PLUS-220SMD
IXFV12N80P
IXYS

MOSFET N-CH 800V 12A PLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS220
  • Package / Case: TO-220-3, Short Tab
pacote: TO-220-3, Short Tab
Estoque4.544
MOSFET (Metal Oxide)
800V
12A (Tc)
10V
5.5V @ 2.5mA
51nC @ 10V
2800pF @ 25V
±30V
-
360W (Tc)
850 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
PLUS220
TO-220-3, Short Tab
IXFV110N10PS
IXYS

MOSFET N-CH 100V 110A PLUS220-S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PLUS-220SMD
  • Package / Case: PLUS-220SMD
pacote: PLUS-220SMD
Estoque4.032
MOSFET (Metal Oxide)
100V
110A (Tc)
10V
5V @ 4mA
110nC @ 10V
3550pF @ 25V
±20V
-
480W (Tc)
15 mOhm @ 500mA, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PLUS-220SMD
PLUS-220SMD
IXFV110N10P
IXYS

MOSFET N-CH 100V 110A PLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS220
  • Package / Case: TO-220-3, Short Tab
pacote: TO-220-3, Short Tab
Estoque5.360
MOSFET (Metal Oxide)
100V
110A (Tc)
10V
5V @ 4mA
110nC @ 10V
3550pF @ 25V
±20V
-
480W (Tc)
15 mOhm @ 500mA, 10V
-55°C ~ 175°C (TJ)
Through Hole
PLUS220
TO-220-3, Short Tab
IXFT17N80Q
IXYS

MOSFET N-CH 800V 17A TO-268(D3)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
pacote: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Estoque3.296
MOSFET (Metal Oxide)
800V
17A (Tc)
10V
4.5V @ 4mA
95nC @ 10V
3600pF @ 25V
±20V
-
400W (Tc)
600 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT15N100Q
IXYS

MOSFET N-CH 1000V 15A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
pacote: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Estoque3.888
MOSFET (Metal Oxide)
1000V
15A (Tc)
10V
5V @ 4mA
170nC @ 5V
4500pF @ 25V
±20V
-
360W (Tc)
700 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXFT12N100Q
IXYS

MOSFET N-CH 1000V 12A TO268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
pacote: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Estoque2.496
MOSFET (Metal Oxide)
1000V
12A (Tc)
10V
5.5V @ 4mA
90nC @ 10V
2900pF @ 25V
±20V
-
300W (Tc)
1.05 Ohm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA