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Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 85µA
- Gate Charge (Qg) (Max) @ Vgs: 46.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque3.328 |
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Infineon Technologies |
MOSFET N-CH 75V 80A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3070pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 46A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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pacote: TO-220-3 |
Estoque6.256 |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5680pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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pacote: TO-220-3 |
Estoque2.448 |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque4.640 |
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Infineon Technologies |
MOSFET N-CH 55V 29A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque23.400 |
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Infineon Technologies |
MOSFET N-CH 30V 23A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque6.432 |
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Infineon Technologies |
MOSFET N-CH 200V 31A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 200W (Tc)
- Rds On (Max) @ Id, Vgs: 82 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque124.212 |
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Infineon Technologies |
MOSFET 2P-CH 12V 5.5A 8-TSSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 5.5A
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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pacote: 8-TSSOP (0.173", 4.40mm Width) |
Estoque4.720 |
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Infineon Technologies |
MOSFET 2P-CH 20V 5A 8DSO
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.7A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 44µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V
- Power - Max: 1.6W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque6.096 |
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Infineon Technologies |
DIODE ARRAY GP 80V 200MA SC75
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 150nA @ 70V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: PG-SC-75
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pacote: SC-75, SOT-416 |
Estoque3.776 |
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Infineon Technologies |
IC REG CTRLR DL BUCK PWM 48QFN
- Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
- Voltage - Input: 3.3V
- Number of Outputs: 2
- Voltage - Output: -
- Operating Temperature: 0°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-QFN (7x7)
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pacote: 48-VFQFN Exposed Pad |
Estoque6.336 |
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Infineon Technologies |
IC SWITCH SMART HISIDE TO263
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 5.5 V ~ 28 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 33A
- Rds On (Typ): -
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
- Supplier Device Package: PG-TO-263-7-8
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pacote: TO-263-7, D2Pak (6 Leads + Tab) |
Estoque3.984 |
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Infineon Technologies |
IC PWR SWITCH N-CHAN 1:1 D2PAK-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 5.5 V ~ 35 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 1.7A
- Rds On (Typ): 110 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
- Supplier Device Package: D2Pak (SMD-220 5-Lead)
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pacote: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB |
Estoque3.424 |
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Infineon Technologies |
IC MOTOR CONTROLLR I2C/SPI 80QFP
- Motor Type - Stepper: -
- Motor Type - AC, DC: AC, Synchronous
- Function: Controller - Commutation, Direction Management
- Output Configuration: Pre-Driver
- Interface: I2C, Parallel, RS-232, RS-422, SPI
- Technology: IGBT
- Step Resolution: -
- Applications: General Purpose
- Current - Output: -
- Voltage - Supply: 3V ~ 3.6V
- Voltage - Load: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 80-TQFP
- Supplier Device Package: 80-QFP (12x12)
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pacote: 80-TQFP |
Estoque3.264 |
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Infineon Technologies |
IC SECURITY CTRLR 32BIT T-M5.3
- Applications: Security
- Core Processor: -
- Program Memory Type: -
- Controller Series: -
- RAM Size: -
- Interface: -
- Number of I/O: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: M5.3 Chip Card Module
- Supplier Device Package: M5.3 Chip Card Module
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pacote: M5.3 Chip Card Module |
Estoque2.640 |
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Infineon Technologies |
SENSOR TEMP RESISTIVE TO-92MINI
- Resistance in Ohms @ 25°C: 1k
- Resistance Tolerance: ±3%
- Operating Temperature: -50°C ~ 150°C
- Power - Max: -
- Mounting Type: Through Hole
- Package / Case: TO-226-2, TO-92-2 (TO-226AC)
- Supplier Device Package: TO-92MINI
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pacote: TO-226-2, TO-92-2 (TO-226AC) |
Estoque5.778 |
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Infineon Technologies |
MAGNETIC SWITCH LATCH SOT23-3
- Function: Latch
- Technology: Hall Effect
- Polarization: South Pole
- Sensing Range: 3.5mT Trip, -3.5mT Release
- Test Condition: 25°C
- Voltage - Supply: 3 V ~ 32 V
- Current - Supply (Max): 2.5mA
- Current - Output (Max): 25mA
- Output Type: Open Drain
- Features: Temperature Compensated
- Operating Temperature: -40°C ~ 170°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3-15
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pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque28.500 |
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Infineon Technologies |
IC SW SMART QUAD LOSIDE DSO-20
- Switch Type: -
- Number of Outputs: -
- Ratio - Input:Output: -
- Output Configuration: -
- Output Type: -
- Interface: -
- Voltage - Load: -
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): -
- Input Type: -
- Features: -
- Fault Protection: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Estoque3.568 |
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Infineon Technologies |
XMC1000
- Core Processor: ARM® Cortex®-M0
- Core Size: 32-Bit
- Speed: 32MHz
- Connectivity: I²C, IrDA, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
- Number of I/O: 26
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
- Data Converters: A/D 14x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: 28-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: PG-TSSOP-28-16
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pacote: 28-TSSOP (0.173", 4.40mm Width) |
Estoque2.112 |
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Infineon Technologies |
IGBT MODULE LOW POWER ECONO
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Request a Quote |
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Infineon Technologies |
USB FULL-SPEED PERIPHERALS
- Protocol: USB
- Function: Bridge
- Interface: GPIO, I2C
- Standards: USB 2.0
- Voltage - Supply: 1.71V ~ 1.89V, 3.15V ~ 3.45V, 4.35V ~ 5.25V, 2V ~ 5.5V
- Current - Supply: 18mA
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 32-VFQFN Exposed Pad
- Supplier Device Package: 32-QFN (5x5)
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pacote: - |
Estoque14.694 |
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Infineon Technologies |
CFA (CMOS FRAME ALIGNER)
- PLL: -
- Main Purpose: -
- Input: -
- Output: -
- Number of Circuits: -
- Ratio - Input:Output: -
- Differential - Input:Output: -
- Frequency - Max: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 150V 203A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.6V @ 265µA
- Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 556W (Tc)
- Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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pacote: - |
Request a Quote |
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Infineon Technologies |
PSOC BASED - TRUETOUCH
- Touchscreen: 2 Wire Capacitive
- Resolution (Bits): -
- Interface: I2C, SPI
- Voltage Reference: -
- Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
- Current - Supply: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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pacote: - |
Request a Quote |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 57ns/380ns
- Test Condition: 400V, 50A, 6.8Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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pacote: - |
Request a Quote |
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Infineon Technologies |
TRAVEO-55NM
- Core Processor: ARM® Cortex®-R5F
- Core Size: 32-Bit
- Speed: 240MHz
- Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
- Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
- Number of I/O: 128
- Program Memory Size: 2.0625MB (2.0625M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 2.25K x 8
- Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
- Data Converters: A/D 50x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 216-LQFP Exposed Pad
- Supplier Device Package: 216-TEQFP (24x24)
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pacote: - |
Estoque1.200 |
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Infineon Technologies |
IC
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Request a Quote |
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Infineon Technologies |
DRIVER_IC
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushless DC (BLDC)
- Function: Controller - Commutation, Direction Management
- Output Configuration: Pre-Driver - Half Bridge (3)
- Interface: Parallel
- Technology: Power MOSFET
- Step Resolution: -
- Applications: -
- Current - Output: -
- Voltage - Supply: 5.5V ~ 20V
- Voltage - Load: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 48-TQFP Exposed Pad
- Supplier Device Package: PG-TQFP-48-8
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pacote: - |
Request a Quote |
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