Infineon Technologies Produtos

IGA30N60H3XKSA1

Infineon Technologies

IGBT 600V 18A 43W TO220-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 18A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
• Power - Max: 43W
• Switching Energy: 1.17mJ
• Input Type: Standard
• Gate Charge: 165nC
• Td (on/off) @ 25°C: 18ns/207ns
• Test Condition: 400V, 30A, 10.5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: PG-TO220-3-31 Full Pack

pacote: TO-220-3 Full Pack

IRG5K35HF12A

Infineon Technologies

MOD IGBT 1200V 35A POWIR 34

• IGBT Type: -
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 70A
• Power - Max: 280W
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 35A
• Current - Collector Cutoff (Max): 1mA
• Input Capacitance (Cies) @ Vce: 3.4nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: POWIR? 34 Module
• Supplier Device Package: POWIR? 34

pacote: POWIR? 34 Module

BUZ32 E3045A

Infineon Technologies

MOSFET N-CH 200V 9.5A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 75W (Tc)
• Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRLR2905ZTRLPBF

Infineon Technologies

MOSFET N-CH 55V 42A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 36A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacote: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF100B202

Infineon Technologies

MOSFET N-CH 100V 97A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4476pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 221W (Tc)
• Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 58A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacote: TO-220-3

IRFR3709ZTRPBF

Infineon Technologies

MOSFET N-CH 30V 86A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacote: TO-252-3, DPak (2 Leads + Tab), SC-63

BC857SE6327BTSA1

Infineon Technologies

TRANS 2PNP 45V 0.1A SOT363

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

pacote: 6-VSSOP, SC-88, SOT-363

IRU3037CSTR

Infineon Technologies

IC REG CTRLR BUCK/BOOST 8SOIC

• Output Type: Transistor Driver
• Function: Step-Up, Step-Down
• Output Configuration: Positive
• Topology: Buck, Boost
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 4.2 V ~ 25 V
• Frequency - Switching: 200kHz
• Duty Cycle (Max): 90%
• Synchronous Rectifier: Yes
• Clock Sync: No
• Serial Interfaces: -
• Control Features: Enable, Soft Start
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacote: 8-SOIC (0.154", 3.90mm Width)

98-0503PBF

Infineon Technologies

IC REG LED BUCK 200V 8SOIC

• Type: -
• Topology: -
• Internal Switch(s): -
• Number of Outputs: -
• Voltage - Supply (Min): -
• Voltage - Supply (Max): -
• Voltage - Output: -
• Current - Output / Channel: -
• Frequency: -
• Dimming: -
• Applications: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacote: -

TLE92613QXXUMA2

Infineon Technologies

IC SBC 48VQFN

• Applications: Automotive
• Interface: SPI
• Voltage - Supply: -
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-31
• Mounting Type: Surface Mount

pacote: 48-VFQFN Exposed Pad

XC164CS16F40FBBKXUMA1

Infineon Technologies

IC MCU 16BIT 128KB FLASH 100TQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 40MHz
• Connectivity: CAN, EBI/EMI, SPI, UART/USART
• Peripherals: PWM, WDT
• Number of I/O: 79
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
• Data Converters: A/D 14x8/10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

pacote: 100-LQFP

CYT3DLABGBQ1AESGST

Infineon Technologies

IC MCU 32BT 4.063MB FLSH 216TQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
• Core Size: 32-Bit Dual-Core
• Speed: 240MHz
• Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
• Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
• Number of I/O: 108
• Program Memory Size: 4.063MB (4.063M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 384K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 216-QFP
• Supplier Device Package: 216-TQFP

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FS75R07N2E4BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2B-411

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 75 A
• Power - Max: 250 W
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO2B

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T940N18TOFXPSA1

Infineon Technologies

SCR MODULE 1800V 1759A DO200AB

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 1.8 kV
• Current - On State (It (AV)) (Max): 959 A
• Current - On State (It (RMS)) (Max): 1759 A
• Voltage - Gate Trigger (Vgt) (Max): 2.2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK

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IPP022N12NM6AKSA1

Infineon Technologies

TRENCH >=100V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 120 V
• Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs(th) (Max) @ Id: 3.6V @ 275µA
• Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
• Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

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IPB95R130PFD7ATMA1

Infineon Technologies

HIGH POWER_NEW

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 950 V
• Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1.25mA
• Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 227W (Tc)
• Rds On (Max) @ Id, Vgs: 130mOhm @ 25.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacote: -

MBC410700BPSA1

Infineon Technologies

MODULE GATE DRIVER

• Type: -
• Configuration: -
• Current: -
• Voltage: -
• Voltage - Isolation: -
• Package / Case: -

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FF8MR12W2M1B11BOMA1

Infineon Technologies

MOSFET 2N-CH 1200V AG-EASY2BM-2

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 150A (Tj)
• Rds On (Max) @ Id, Vgs: 7.5mOhm @ 150A, 15V (Typ)
• Vgs(th) (Max) @ Id: 5.55V @ 60mA
• Gate Charge (Qg) (Max) @ Vgs: 372nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 800V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY2BM-2

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FF200R12KS4HOSA1

Infineon Technologies

IGBT MOD 1200V 275A 1400W

• IGBT Type: -
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 275 A
• Power - Max: 1400 W
• Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 200A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

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CY8CTMA1036AA-13T

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): 32 b
• Interface: I2C, SPI
• Voltage Reference: Internal
• Voltage - Supply: 1.71V ~ 5.5V, 2.6V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

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FF4MR12W2M1HPB11BPSA1

Infineon Technologies

LOW POWER EASY

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 170A
• Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
• Vgs(th) (Max) @ Id: 5.15V @ 80mA
• Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
• Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
• Power - Max: 20mW
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY2B

pacote: -

CG7072AAT

Infineon Technologies

SEMICONDUCTOR OTHER

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacote: -

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IPD65R950CFDATMA2

Infineon Technologies

MOSFET N-CH 650V 3.9A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 36.7W (Tc)
• Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacote: -

IPP65R280E6XKSA1

Infineon Technologies

MOSFET N-CH 650V 13.8A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 440µA
• Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 104W (Tc)
• Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

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BSZ0908NDXTMA2

Infineon Technologies

MOSFET 2N-CH 30V 4.8A WISON-8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate, 4.5V Drive
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 7.6A (Ta)
• Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 6.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V, 730pF @ 15V
• Power - Max: 700mW (Ta), 860mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-WISON-8

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IPB100N10S305ATMA2

Infineon Technologies

MOSFET_(75V 120V(

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 240µA
• Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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CY15B102QSN-108SXIT

Infineon Technologies

IC FRAM 2MBIT SPI/QUAD 8SOIC

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 2Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 108 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 7 ns
• Voltage - Supply: 1.8V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 8-SOIC

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CG7501AAT

Infineon Technologies

IC SRAM NON VOLATILE 48FBGA

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

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