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Infineon Technologies |
JFET N-CHAN 35A TO247-3
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 1200V
- Current - Drain (Idss) @ Vds (Vgs=0): 3.3µA @ 1200V
- Current Drain (Id) - Max: 35A
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 19.5V (VGS)
- Resistance - RDS(On): 70 mOhm
- Power - Max: 238W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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pacote: TO-247-3 |
Estoque6.912 |
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Infineon Technologies |
MOSFET N-CH 100V 180A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9575pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 106A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque2.480 |
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Infineon Technologies |
MOSFET N-CH 20V 92A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque6.592 |
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Infineon Technologies |
MOSFET N-CH 650V 20.7A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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pacote: TO-220-3 |
Estoque5.872 |
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Infineon Technologies |
MOSFET N-CH 60V 43A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque3.744 |
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Infineon Technologies |
MOSFET N-CH 500V 2.4A TO-251
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Vgs(th) (Max) @ Id: 3.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 124pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 600mA, 13V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO251
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque2.032 |
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Infineon Technologies |
IC REG LIN TRACKING 50MA SCT595
- Output Configuration: Positive
- Output Type: Adjustable
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): Tracking
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.3V @ 10mA
- Current - Output: 50mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 200µA ~ 5mA
- PSRR: 48dB (100Hz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD (5 Leads), Gull Wing
- Supplier Device Package: PG-SCT595-5
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pacote: 6-SMD (5 Leads), Gull Wing |
Estoque3.072 |
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Infineon Technologies |
IC REG CTRLR BUCK/HALF-BRG 8SOIC
- Output Type: Transistor Driver
- Function: Step-Down, Step-Up/Step-Down
- Output Configuration: Positive, Isolation Capable
- Topology: Buck, Half-Bridge
- Number of Outputs: 2
- Output Phases: 2
- Voltage - Supply (Vcc/Vdd): 12 V ~ 18 V
- Frequency - Switching: Up to 500kHz
- Duty Cycle (Max): 50%
- Synchronous Rectifier: Yes
- Clock Sync: No
- Serial Interfaces: -
- Control Features: Enable, Frequency Control
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque7.456 |
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Infineon Technologies |
IC SECONDARY SIDE CTRLR 8SOIC
- Applications: Secondary-Side Controller, Synchronous Rectifier
- Voltage - Input: -
- Voltage - Supply: 8.6 V ~ 18 V
- Current - Supply: 48mA
- Operating Temperature: -25°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque22.716 |
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Infineon Technologies |
IC POWER SUPPLY CONTROLLER 14DIP
- Applications: Power Supply Controller
- Voltage - Input: -
- Voltage - Supply: 8 V ~ 16 V
- Current - Supply: 5mA
- Operating Temperature: -25°C ~ 125°C
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: P-DIP-14
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pacote: 14-DIP (0.300", 7.62mm) |
Estoque6.640 |
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Infineon Technologies |
IC REG LED BUCK 200V DIE
- Type: -
- Topology: -
- Internal Switch(s): -
- Number of Outputs: -
- Voltage - Supply (Min): -
- Voltage - Supply (Max): -
- Voltage - Output: -
- Current - Output / Channel: -
- Frequency: -
- Dimming: -
- Applications: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Estoque4.944 |
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Infineon Technologies |
IC DRIVER RECT SYNC 5V 2A 20SSOP
- Driven Configuration: Low-Side
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4 V ~ 5.5 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 20ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 20-SSOP (0.209", 5.30mm Width)
- Supplier Device Package: 20-SSOP
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pacote: 20-SSOP (0.209", 5.30mm Width) |
Estoque7.936 |
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Infineon Technologies |
TXRX MULT-MODE 850NM 1.3GBIT
- Data Rate: 1.3Gbps
- Wavelength: 850nm
- Applications: Ethernet
- Voltage - Supply: 4.75 V ~ 5.25 V
- Connector Type: SC
- Mounting Type: Through Hole
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pacote: - |
Estoque8.208 |
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Infineon Technologies |
IC HALL EFFECT LATCH SC59-3
- Function: -
- Technology: -
- Polarization: -
- Sensing Range: -
- Test Condition: -
- Voltage - Supply: -
- Current - Supply (Max): -
- Current - Output (Max): -
- Output Type: -
- Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Estoque4.266 |
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Infineon Technologies |
CONTROL
- Frequency: 433MHz ~ 435MHz
- Applications: General Purpose
- Modulation or Protocol: ASK, FSK
- Data Rate (Max): -
- Power - Output: 6.9dBm
- Current - Transmitting: 11.4mA
- Data Interface: -
- Antenna Connector: Castellation
- Memory Size: -
- Features: -
- Voltage - Supply: 2.1 V ~ 4 V
- Operating Temperature: -40°C ~ 125°C
- Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
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pacote: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) |
Estoque8.082 |
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Infineon Technologies |
IC XPHASE CONTROL 28-MLPQ
- Applications: Processor
- Current - Supply: 14mA
- Voltage - Supply: 9.5 V ~ 16 V
- Operating Temperature: 0°C ~ 100°C
- Mounting Type: Surface Mount
- Package / Case: 28-VFQFN Exposed Pad
- Supplier Device Package: 28-MLPQ (5x5)
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pacote: 28-VFQFN Exposed Pad |
Estoque4.432 |
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Infineon Technologies |
IC SW SMART QUAD LOWSIDE PDSO20
- Switch Type: -
- Number of Outputs: -
- Ratio - Input:Output: -
- Output Configuration: -
- Output Type: -
- Interface: -
- Voltage - Load: -
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): -
- Input Type: -
- Features: -
- Fault Protection: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Estoque5.088 |
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Infineon Technologies |
IC REG BUCK 40VQFN
- Output Type: -
- Function: -
- Output Configuration: -
- Topology: -
- Number of Outputs: -
- Output Phases: -
- Voltage - Supply (Vcc/Vdd): -
- Frequency - Switching: -
- Duty Cycle (Max): -
- Synchronous Rectifier: -
- Clock Sync: -
- Serial Interfaces: -
- Control Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Estoque2.928 |
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Infineon Technologies |
MOSFET N-CH 30V 21A PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1.1V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (3x3)
- Package / Case: 8-VQFN Exposed Pad
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pacote: - |
Request a Quote |
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Infineon Technologies |
SCR MODULE 1800V 1500A DO200AB
- Structure: Single
- Number of SCRs, Diodes: 1 SCR
- Voltage - Off State: 1.8 kV
- Current - On State (It (AV)) (Max): 844 A
- Current - On State (It (RMS)) (Max): 1500 A
- Voltage - Gate Trigger (Vgt) (Max): 1.5 V
- Current - Gate Trigger (Igt) (Max): 250 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
- Current - Hold (Ih) (Max): 300 mA
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
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pacote: - |
Request a Quote |
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Infineon Technologies |
IC REG BUCK ADJ 3A 19IQFN
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 4.5V
- Voltage - Input (Max): 17V
- Voltage - Output (Min/Fixed): 0.6V
- Voltage - Output (Max): 6V
- Current - Output: 3A
- Frequency - Switching: 600kHz ~ 2MHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 19-PowerVFQFN
- Supplier Device Package: PG-IQFN-19-900
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pacote: - |
Estoque16.317 |
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Infineon Technologies |
MOSFET N-CH 30V 10A/35A 8TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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pacote: - |
Estoque86.457 |
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Infineon Technologies |
TRENCH <= 40V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 232A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 126µA
- Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
- Rds On (Max) @ Id, Vgs: 1.35mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-U02
- Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
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pacote: - |
Estoque2.400 |
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Infineon Technologies |
SIC DISCRETE
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 2000 V
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Vgs(th) (Max) @ Id: 5.5V @ 24mA
- Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): +20V, -7V
- FET Feature: -
- Power Dissipation (Max): 576W (Tc)
- Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-U04
- Package / Case: TO-247-4
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pacote: - |
Estoque351 |
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Infineon Technologies |
IC FLASH 64MBIT PARALLEL 48TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 90 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP
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pacote: - |
Request a Quote |
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Infineon Technologies |
IC SRAM 9MBIT 117MHZ 100LQFP
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 9Mbit
- Memory Interface: Parallel
- Clock Frequency: 117 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 7 ns
- Voltage - Supply: 3.135V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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pacote: - |
Request a Quote |
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Infineon Technologies |
TRENCH 40<-<100V PG-TTFN-9
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 49µA
- Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PG-TTFN-9-1
- Package / Case: 8-PowerTDFN
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pacote: - |
Estoque29.310 |
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Infineon Technologies |
IC MCU 32BIT 256KB FLASH 48TQFP
- Core Processor: ARM® Cortex®-M0
- Core Size: 32-Bit Single-Core
- Speed: 24MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
- Number of I/O: 38
- Program Memory Size: 256KB (256K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
- Oscillator Type: External
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-LQFP
- Supplier Device Package: 48-TQFP (7x7)
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pacote: - |
Request a Quote |
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