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Infineon Technologies |
IGBT 600V 28A 100W TO247AC
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 28A
- Current - Collector Pulsed (Icm): 58A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
- Power - Max: 100W
- Switching Energy: 600µJ (on), 580µJ (off)
- Input Type: Standard
- Gate Charge: 67nC
- Td (on/off) @ 25°C: 60ns/160ns
- Test Condition: 480V, 16A, 23 Ohm, 15V
- Reverse Recovery Time (trr): 42ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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pacote: TO-247-3 |
Estoque6.552 |
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Infineon Technologies |
MOSFET N-CH 100V 11A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.6V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
- Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerTDFN
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pacote: 8-PowerTDFN |
Estoque2.944 |
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Infineon Technologies |
MOSFET N-CH 20V 50A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque3.136 |
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Infineon Technologies |
MOSFET N-CH 55V 30A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque2.944 |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque6.928 |
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Infineon Technologies |
MOSFET P-CH 40V 10.5A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9250pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 10.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque52.464 |
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Infineon Technologies |
MOSFET N-CH 100V 90A TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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pacote: 8-PowerTDFN |
Estoque2.944 |
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Infineon Technologies |
TRANS RF NPN 4.5V 50MA 4TSFP
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.7V
- Frequency - Transition: 46GHz
- Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
- Gain: 8B ~ 30.5dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-TSFP
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pacote: 4-SMD, Flat Leads |
Estoque3.632 |
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Infineon Technologies |
IC SWITCH PWR HISIDE DSO-14
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 5 V ~ 28 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 8A
- Rds On (Typ): 16 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-14-47-EP
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pacote: 14-SOIC (0.154", 3.90mm Width) Exposed Pad |
Estoque6.608 |
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Infineon Technologies |
IC PFC CONTROLLER CCM 8DIP
- Mode: Continuous Conduction (CCM)
- Frequency - Switching: 65kHz
- Current - Startup: 450µA
- Voltage - Supply: 11 V ~ 25 V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: PG-DIP-8
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pacote: 8-DIP (0.300", 7.62mm) |
Estoque7.152 |
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Infineon Technologies |
IC MCU 16BIT 384KB FLASH 100LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 80MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 76
- Program Memory Size: 384KB (384K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 34K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 11x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-100-8
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pacote: 100-LQFP Exposed Pad |
Estoque7.280 |
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Infineon Technologies |
IC MCU 16BIT ROMLESS 144MQFP
- Core Processor: C166
- Core Size: 16-Bit
- Speed: 25MHz
- Connectivity: CAN, EBI/EMI, SPI, UART/USART
- Peripherals: POR, PWM, WDT
- Number of I/O: 111
- Program Memory Size: -
- Program Memory Type: ROMless
- EEPROM Size: -
- RAM Size: 11K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 24x10b
- Oscillator Type: External
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: 144-BQFP
- Supplier Device Package: PG-MQFP-144
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pacote: 144-BQFP |
Estoque5.232 |
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Infineon Technologies |
IC MCU 16BIT ROMLESS 80MQFP
- Core Processor: C166
- Core Size: 16-Bit
- Speed: 20MHz
- Connectivity: EBI/EMI, SPI, UART/USART
- Peripherals: POR, PWM, WDT
- Number of I/O: 63
- Program Memory Size: -
- Program Memory Type: ROMless
- EEPROM Size: -
- RAM Size: 1K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: -
- Oscillator Type: External
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: 80-QFP
- Supplier Device Package: 80-MQFP (14x14)
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pacote: 80-QFP |
Estoque5.616 |
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Infineon Technologies |
IC MCU 16BIT 320KB FLASH 64LQFP
- Core Processor: C166SV2
- Core Size: 16/32-Bit
- Speed: 80MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 38
- Program Memory Size: 320KB (320K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 34K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 9x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-64-6
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pacote: 64-LQFP Exposed Pad |
Estoque5.072 |
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Infineon Technologies |
IC PROCESSOR NTWRK SOC 208-LQFP
- Applications: Network Processor
- Core Processor: 4Kc
- Program Memory Type: -
- Controller Series: -
- RAM Size: 16K x 8
- Interface: Ethernet, UART, USB
- Number of I/O: -
- Voltage - Supply: 1.8V, 3.3V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 208-LQFP
- Supplier Device Package: PG-LQFP-208
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pacote: 208-LQFP |
Estoque6.160 |
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Infineon Technologies |
IC MOTOR DRIVER 48VQFN
- Applications: Automotive
- Core Processor: ARM? Cortex?-M3
- Program Memory Type: FLASH (64 kB)
- Controller Series: -
- RAM Size: 6K x 8
- Interface: LIN, SSI, UART
- Number of I/O: 10
- Voltage - Supply: 5.5 V ~ 28 V
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: VQFN-48-31
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pacote: 48-VFQFN Exposed Pad |
Estoque2.560 |
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Infineon Technologies |
IC REGULATOR PG-VQFN-40-901
- Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
- Voltage - Input: 3.3V
- Number of Outputs: 2
- Voltage - Output: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 40-VFQFN Exposed Pad
- Supplier Device Package: 40-VQFN (5x5)
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pacote: 40-VFQFN Exposed Pad |
Estoque3.056 |
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Infineon Technologies |
IC HIGH SIDE SWITCH SMART 8DSO
- Switch Type: -
- Number of Outputs: -
- Ratio - Input:Output: -
- Output Configuration: -
- Output Type: -
- Interface: -
- Voltage - Load: -
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): -
- Input Type: -
- Features: -
- Fault Protection: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Estoque3.712 |
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Infineon Technologies |
IC TXRX CAN LITE SBC 2MBPS
- Type: System Basis Chip (SBC)
- Applications: CAN Automotive
- Mounting Type: Surface Mount
- Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-TSDSO-24-1
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pacote: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad |
Estoque21.660 |
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Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
- Number of I/O: 54
- Program Memory Size: 384KB (384K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (10x10)
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pacote: - |
Request a Quote |
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Infineon Technologies |
IC FLASH 512MBIT PARALLEL 56TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 512Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 100ns
- Access Time: 100 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 56-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 56-TSOP
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pacote: - |
Request a Quote |
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Infineon Technologies |
DIODE GEN PURP 1.6KV 171A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 171A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
- Operating Temperature - Junction: 150°C
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pacote: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 150V 21A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 53mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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pacote: - |
Request a Quote |
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Infineon Technologies |
SCR MODULE PB50-1
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1.6 kV
- Current - On State (It (AV)) (Max): 330 A
- Current - On State (It (RMS)) (Max): 520 A
- Voltage - Gate Trigger (Vgt) (Max): 2 V
- Current - Gate Trigger (Igt) (Max): 200 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 12500A @ 50Hz
- Current - Hold (Ih) (Max): 300 mA
- Operating Temperature: 130°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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pacote: - |
Estoque9 |
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Infineon Technologies |
TRAVEO-40NM
- Core Processor: ARM® Cortex®-R5F
- Core Size: 32-Bit
- Speed: 132MHz
- Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
- Peripherals: DMA, I2S, LVD, POR, PWM, WDT
- Number of I/O: 94
- Program Memory Size: 112KB (112K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 128K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 40x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 144-LQFP
- Supplier Device Package: 144-LQFP (16x16)
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pacote: - |
Estoque2.520 |
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Infineon Technologies |
CIPOS TINY
- Type: IGBT
- Configuration: 3 Phase Inverter
- Current: 10 A
- Voltage: 600 V
- Voltage - Isolation: 2000Vrms
- Package / Case: 26-PowerDIP Module (1.043", 26.50mm)
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pacote: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BT 4.0625MB FLSH 100QFP
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
- Core Size: 32-Bit Dual-Core
- Speed: 100MHz, 250MHz
- Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
- Number of I/O: 72
- Program Memory Size: 4.0625MB (4.0625M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 256K x 8
- RAM Size: 768K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 55x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: 100-TEQFP (14x14)
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pacote: - |
Estoque2.700 |
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Infineon Technologies |
OPTIMOS 6 POWER-TRANSISTOR,120V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 94W (Tc)
- Rds On (Max) @ Id, Vgs: 10.4mOhm @ 28A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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pacote: - |
Estoque25.701 |
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