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Infineon Technologies |
IGBT 1200V 130A 469W TO247AC
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 130A
- Current - Collector Pulsed (Icm): 160A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 469W
- Switching Energy: 2.56mJ (on), 1.78mJ (off)
- Input Type: Standard
- Gate Charge: 220nC
- Td (on/off) @ 25°C: 45ns/410ns
- Test Condition: 600V, 40A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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pacote: TO-247-3 |
Estoque7.072 |
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Infineon Technologies |
MOSFET N-CH 30V 28A MX
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 28A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MX
- Package / Case: DirectFET? Isometric MX
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pacote: DirectFET? Isometric MX |
Estoque3.008 |
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Infineon Technologies |
MOSFET N-CH 150V 5.1A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1783pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 44 mOhm @ 3.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque42.312 |
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Infineon Technologies |
MOSFET N-CH 600V 11A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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pacote: TO-247-3 |
Estoque3.392 |
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Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque3.280 |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Vgs(th) (Max) @ Id: 1V @ 94µA
- Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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pacote: TO-261-4, TO-261AA |
Estoque2.640 |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5110pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 330W (Tc)
- Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 104A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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pacote: TO-220-3 |
Estoque34.992 |
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Infineon Technologies |
DIODE GEN PURP 650V 28A TO220-2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 28A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 42ns
- Current - Reverse Leakage @ Vr: 40µA @ 650V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: PG-TO220-2 Full Pack
- Operating Temperature - Junction: -40°C ~ 175°C
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pacote: TO-220-2 Full Pack |
Estoque21.132 |
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Infineon Technologies |
IC REG LINEAR 3.3V 100MA 8DSO
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 26V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 1.1V @ 100mA
- Current - Output: 100mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 1mA ~ 15mA
- PSRR: 80dB (120Hz)
- Control Features: -
- Protection Features: Mirror-Image Insertion, Over Current, Over Temperature, Reverse Polarity
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque2.832 |
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Infineon Technologies |
IC PWR SWITCH HISIDE PG-TSON-24
- Switch Type: General Purpose
- Number of Outputs: 4
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: SPI
- Voltage - Load: 5.5 V ~ 28 V
- Voltage - Supply (Vcc/Vdd): 3.8 V ~ 5.5 V
- Current - Output (Max): 2A
- Rds On (Typ): 39 mOhm
- Input Type: -
- Features: -
- Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 24-PowerVDFN
- Supplier Device Package: TSON-24-3
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pacote: 24-PowerVDFN |
Estoque5.856 |
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Infineon Technologies |
IC SW IPS 1CH LOW SIDE SOT223
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 6 V ~ 28 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 1.3A
- Rds On (Typ): 160 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Fixed), Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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pacote: TO-261-4, TO-261AA |
Estoque7.488 |
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Infineon Technologies |
IC PWR SW HI-SIDE 1CH 8DSO
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 8 V ~ 18 V
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): 5A
- Rds On (Typ): 30 mOhm
- Input Type: -
- Features: -
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-8-43-EP
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pacote: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Estoque25.650 |
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Infineon Technologies |
IC DRIVER DUAL LOW SIDE 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 6 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.7V
- Current - Peak Output (Source, Sink): 2.3A, 3.3A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 15ns, 10ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque55.920 |
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Infineon Technologies |
IC MCU 16BIT 320KB FLASH 64LQFP
- Core Processor: C166SV2
- Core Size: 16/32-Bit
- Speed: 20MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 38
- Program Memory Size: 320KB (320K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 34K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 9x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-64-6
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pacote: 64-LQFP Exposed Pad |
Estoque2.432 |
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Infineon Technologies |
IC AUDIO DVR DGTL HI/LO DIE
- Function: -
- Applications: -
- Number of Channels: -
- Interface: -
- Voltage - Supply: -
- Operating Temperature: -
- Specifications: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Estoque2.672 |
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Infineon Technologies |
AUDIO AMPLIFIERS INDUSTRIAL IC
- Function: -
- Applications: -
- Number of Channels: -
- Interface: -
- Voltage - Supply: -
- Operating Temperature: -
- Specifications: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Estoque2.944 |
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Infineon Technologies |
IC HIGH SIDE PWR SWITCH DPAK-5
- Switch Type: -
- Number of Outputs: -
- Ratio - Input:Output: -
- Output Configuration: -
- Output Type: -
- Interface: -
- Voltage - Load: -
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): -
- Input Type: -
- Features: -
- Fault Protection: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Estoque6.368 |
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Infineon Technologies |
IC MCU 32BIT 44MQFP
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Estoque6.848 |
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Infineon Technologies |
INFINEON
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: HyperFlash
- Memory Size: 512Mbit
- Memory Interface: HyperBus
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 96 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
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pacote: - |
Request a Quote |
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Infineon Technologies |
LEGACY 8-BIT MCU
- Core Processor: 8051
- Core Size: 8-Bit
- Speed: 20MHz
- Connectivity: UART/USART
- Peripherals: POR, PWM, WDT
- Number of I/O: 34
- Program Memory Size: 16KB (16K x 8)
- Program Memory Type: Mask ROM
- EEPROM Size: -
- RAM Size: 256 x 8
- Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
- Data Converters: A/D 8x8b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-QFP
- Supplier Device Package: P-MQFP-44-1
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pacote: - |
Request a Quote |
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Infineon Technologies |
DIODE MOD GP 6500V AIHV130-6
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 6500 V
- Current - Average Rectified (Io) (per Diode): -
- Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 750 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature - Junction: -50°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: A-IHV130-6
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pacote: - |
Request a Quote |
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Infineon Technologies |
DIODE GP 600V 10450A D-ELEM-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 10450A
- Voltage - Forward (Vf) (Max) @ If: 980 mV @ 6000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 mA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AC, K-PUK
- Supplier Device Package: BG-D-ELEM-1
- Operating Temperature - Junction: 180°C (Max)
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pacote: - |
Estoque15 |
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Infineon Technologies |
IC FLASH 64MBIT SPI/QUAD 24BGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 64Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 80 MHz
- Write Cycle Time - Word, Page: 2ms
- Access Time: 6 ns
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-BGA (8x6)
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pacote: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 650V 16A TO251-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 64W (Tc)
- Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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pacote: - |
Estoque918 |
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Infineon Technologies |
MOSFET P-CH 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-DSO-8-6
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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pacote: - |
Estoque67.197 |
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Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
- Number of I/O: 40
- Program Memory Size: 256KB (256K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-QFN (7x7)
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pacote: - |
Request a Quote |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 75W
- Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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pacote: - |
Request a Quote |
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Infineon Technologies |
IGBT MODULE 1700V 1450W
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): -
- Power - Max: 1450 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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pacote: - |
Estoque18 |
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