Página 60 - Infineon Technologies Produtos - Transistores - FET, MOSFET - Simples

IQDH88N06LM5CGATMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TTFN-9-U02
Package / Case: 9-PowerTDFN

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MOSFET (Metal Oxide)

60 V

42A (Ta), 447A (Tc)

4.5V, 10V

2.3V @ 163µA

152 nC @ 10 V

14000 pF @ 30 V

±20V

-

3W (Ta), 333W (Tc)

0.86mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TTFN-9-U02

9-PowerTDFN

IPBE65R190CFD7AATMA1

Infineon Technologies

MOSFET N-CH 650V 14A TO263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-11
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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MOSFET (Metal Oxide)

650 V

14A (Tc)

-

4.5V @ 320µA

7 nC @ 10 V

1291 pF @ 400 V

±20V

-

77W (Tc)

190mOhm @ 6.4A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-TO263-7-11

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

IRFH5106TR2PBF

Infineon Technologies

MOSFET N-CH 60V 100A 5X6 PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerVDFN

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MOSFET (Metal Oxide)

60 V

21A (Ta), 100A (Tc)

-

4V @ 250µA

75 nC @ 10 V

3090 pF @ 25 V

-

5.6mOhm @ 50A, 10V

-

Surface Mount

8-PQFN (5x6)

8-PowerVDFN

IPB80P03P4L04ATMA2

Infineon Technologies

MOSFET P-CH 30V 80A TO263-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2V @ 253µA
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Vgs (Max): +5V, -16V
FET Feature: -
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Estoque22.281

MOSFET (Metal Oxide)

30 V

80A (Tc)

-

2V @ 253µA

160 nC @ 10 V

11300 pF @ 25 V

+5V, -16V

-

137W (Tc)

4.4mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPP05CN10NGHKSA1

Infineon Technologies

MOSFET N-CH 100V 100A TO-220

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

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-

100A (Tc)

-

IAUZ40N06S5L050ATMA1

Infineon Technologies

MOSFET_)40V 60V) PG-TSDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 29µA
Gate Charge (Qg) (Max) @ Vgs: 36.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-33
Package / Case: 8-PowerTDFN

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Estoque14.040

MOSFET (Metal Oxide)

60 V

90A (Tj)

4.5V, 10V

2.2V @ 29µA

36.7 nC @ 10 V

2500 pF @ 30 V

±16V

-

71W (Tc)

5mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSDSON-8-33

8-PowerTDFN

IRFH5210TR2PBF

Infineon Technologies

MOSFET N-CH 100V 10A 5X6 PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 33A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerVDFN

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MOSFET (Metal Oxide)

100 V

10A (Ta), 55A (Tc)

-

4V @ 100µA

59 nC @ 10 V

2570 pF @ 25 V

-

14.9mOhm @ 33A, 10V

-

Surface Mount

8-PQFN (5x6)

8-PowerVDFN

SPW35N60C3FKSA1

Infineon Technologies

MOSFET N-CH 650V 34.6A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 34.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 313W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 21.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

pacote: -

Estoque582

MOSFET (Metal Oxide)

650 V

34.6A (Tc)

10V

3.9V @ 1.9mA

200 nC @ 10 V

4500 pF @ 25 V

±20V

-

313W (Tc)

100mOhm @ 21.9A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-1

TO-247-3

IPB65R125C7ATMA2

Infineon Technologies

MOSFET N-CH 650V 18A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 440µA
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Estoque2.994

MOSFET (Metal Oxide)

650 V

18A (Tc)

10V

4V @ 440µA

35 nC @ 10 V

1670 pF @ 400 V

±20V

-

101W (Tc)

125mOhm @ 8.9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IRF100P219XKMA1

Infineon Technologies

MOSFET N-CH 100V TO247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 341W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

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MOSFET (Metal Oxide)

100 V

203A (Tc)

6V, 10V

3.8V @ 278µA

270 nC @ 10 V

12020 pF @ 50 V

±20V

-

341W (Tc)

1.7mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247AC

TO-247-3

IPT65R190CFD7XTMA1

Infineon Technologies

MOSFET N-CH 650V 8HSOF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: TOLL
Package / Case: 8-PowerSFN

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MOSFET (Metal Oxide)

650 V

-

Surface Mount

TOLL

8-PowerSFN

IPTC063N15NM5ATMA1

Infineon Technologies

OPTIMOS 5 POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4.6V @ 163µA
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-16-2
Package / Case: 16-PowerSOP Module

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MOSFET (Metal Oxide)

150 V

16.2A (Ta), 122A (Tc)

8V, 10V

4.6V @ 163µA

63 nC @ 10 V

4800 pF @ 75 V

±20V

-

3.8W (Ta), 214W (Tc)

6.3mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HDSOP-16-2

16-PowerSOP Module

IPP026N10NF2SAKMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 184A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

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Estoque4.491

MOSFET (Metal Oxide)

100 V

27A (Ta), 184A (Tc)

6V, 10V

3.8V @ 169µA

154 nC @ 10 V

7300 pF @ 50 V

±20V

-

3.8W (Ta), 250W (Tc)

2.6mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

AUIRFN8478TR

Infineon Technologies

AUIRFN8478 - 20V-40V N-CHANNEL A

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

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-

AIMBG120R040M1XTMA1

Infineon Technologies

SIC_DISCRETE

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 48A
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-12
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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Estoque1.389

SiCFET (Silicon Carbide)

1200 V

48A

-

-55°C ~ 175°C

Surface Mount

PG-TO263-7-12

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

IPP030N06NF2SAKMA1

Infineon Technologies

TRENCH 40<-<100V PG-TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 119A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 80µA
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-U05
Package / Case: TO-220-3

pacote: -

Estoque2.748

MOSFET (Metal Oxide)

60 V

26A (Ta), 119A (Tc)

6V, 10V

3.3V @ 80µA

102 nC @ 10 V

4600 pF @ 30 V

±20V

-

3.8W (Ta), 150W (Tc)

3.05mOhm @ 70A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-U05

TO-220-3

BSC019N04LSTATMA1

Infineon Technologies

MOSFET N-CH 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 161A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TA)
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

Estoque15.000

MOSFET (Metal Oxide)

40 V

28A (Ta), 161A (Tc)

4.5V, 10V

2V @ 250µA

57 nC @ 10 V

4060 pF @ 20 V

±20V

-

94W (Tc)

1.9mOhm @ 50A, 10V

-55°C ~ 175°C (TA)

-

AUIRFSL4010-306

Infineon Technologies

MOSFET N-CH 100V 180A TO262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA

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MOSFET (Metal Oxide)

100 V

180A (Tc)

10V

4V @ 250µA

215 nC @ 10 V

9575 pF @ 50 V

±20V

-

375W (Tc)

4.7mOhm @ 106A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-262

TO-262-3 Long Leads, I2PAK, TO-262AA

IPDD60R170CFD7XTMA1

Infineon Technologies

MOSFET N-CH 600V 19A HDSOP-10

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-10-1
Package / Case: 10-PowerSOP Module

pacote: -

Estoque141

MOSFET (Metal Oxide)

600 V

19A (Tc)

-

4.5V @ 240µA

23 nC @ 10 V

1016 pF @ 400 V

±20V

-

137W (Tc)

170mOhm @ 4.9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-10-1

10-PowerSOP Module

IPD65R420CFDATMA2

Infineon Technologies

MOSFET N-CH 650V 8.7A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-341
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacote: -

Estoque7.470

MOSFET (Metal Oxide)

650 V

8.7A (Tc)

10V

4.5V @ 300µA

31.5 nC @ 10 V

870 pF @ 100 V

±20V

-

83.3W (Tc)

420mOhm @ 3.4A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3-341

TO-252-3, DPAK (2 Leads + Tab), SC-63

AUIRFSL4010-313

Infineon Technologies

MOSFET N-CH 100V 180A TO262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA

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MOSFET (Metal Oxide)

100 V

180A (Tc)

10V

4V @ 250µA

215 nC @ 10 V

9575 pF @ 50 V

±20V

-

375W (Tc)

4.7mOhm @ 106A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-262

TO-262-3 Long Leads, I2PAK, TO-262AA

ISC0602NLSATMA1

Infineon Technologies

MOSFET N-CH 80V 14A/66A TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-6
Package / Case: 8-PowerTDFN

pacote: -

Estoque34.731

MOSFET (Metal Oxide)

80 V

14A (Ta), 66A (Tc)

4.5V, 10V

2.3V @ 29µA

22 nC @ 10 V

1800 pF @ 40 V

±20V

-

2.5W (Ta), 60W (Tc)

7.3mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-6

8-PowerTDFN

IRFH8325TR2PBF

Infineon Technologies

MOSFET N-CH 30V 17A 5X6 PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2487 pF @ 10 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PQFN (5x6)
Package / Case: 8-PowerTDFN

pacote: -

Request a Quote

MOSFET (Metal Oxide)

30 V

21A (Ta), 82A (Tc)

-

2.35V @ 50µA

32 nC @ 10 V

2487 pF @ 10 V

-

5mOhm @ 20A, 10V

-

Surface Mount

PQFN (5x6)

8-PowerTDFN

IAUW162N04S4LX7SA1

Infineon Technologies

MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

Request a Quote

-

IMW65R050M2HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

Request a Quote

-

ISZ75DP15LMATMA1

Infineon Technologies

TRENCH >=100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

Estoque15.000

-

SPA02N80C3XKSA1

Infineon Technologies

MOSFET N-CH 800V 2A TO220-FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 30.5W (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-31
Package / Case: TO-220-3 Full Pack

pacote: -

Request a Quote

MOSFET (Metal Oxide)

800 V

2A (Tc)

10V

3.9V @ 120µA

16 nC @ 10 V

290 pF @ 100 V

±20V

-

30.5W (Tc)

2.7Ohm @ 1.2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3-31

TO-220-3 Full Pack

IRFC250NB

Infineon Technologies

MOSFET 200V DIE

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

pacote: -

Request a Quote

MOSFET (Metal Oxide)

200 V

-

Surface Mount

Die

Nº de peças	Fabricante	Descrição	pacote	Estoque	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IQDH88N06LM5CGATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 163µA Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TTFN-9-U02 Package / Case: 9-PowerTDFN	pacote: -	Request a Quote	MOSFET (Metal Oxide)	60 V	42A (Ta), 447A (Tc)	4.5V, 10V	2.3V @ 163µA	152 nC @ 10 V	14000 pF @ 30 V	±20V	-	3W (Ta), 333W (Tc)	0.86mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TTFN-9-U02	9-PowerTDFN
IPBE65R190CFD7AATMA1	Infineon Technologies	MOSFET N-CH 650V 14A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 77W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-11 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	pacote: -	Request a Quote	MOSFET (Metal Oxide)	650 V	14A (Tc)	-	4.5V @ 320µA	7 nC @ 10 V	1291 pF @ 400 V	±20V	-	77W (Tc)	190mOhm @ 6.4A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263-7-11	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IRFH5106TR2PBF	Infineon Technologies	MOSFET N-CH 60V 100A 5X6 PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	pacote: -	Request a Quote	MOSFET (Metal Oxide)	60 V	21A (Ta), 100A (Tc)	-	4V @ 250µA	75 nC @ 10 V	3090 pF @ 25 V	-	-	-	5.6mOhm @ 50A, 10V	-	Surface Mount	8-PQFN (5x6)	8-PowerVDFN
IPB80P03P4L04ATMA2	Infineon Technologies	MOSFET P-CH 30V 80A TO263-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 253µA Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 137W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacote: -	Estoque22.281	MOSFET (Metal Oxide)	30 V	80A (Tc)	-	2V @ 253µA	160 nC @ 10 V	11300 pF @ 25 V	+5V, -16V	-	137W (Tc)	4.4mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPP05CN10NGHKSA1	Infineon Technologies	MOSFET N-CH 100V 100A TO-220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Request a Quote	-	-	100A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-
IAUZ40N06S5L050ATMA1	Infineon Technologies	MOSFET_)40V 60V) PG-TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 90A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 29µA Gate Charge (Qg) (Max) @ Vgs: 36.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-33 Package / Case: 8-PowerTDFN	pacote: -	Estoque14.040	MOSFET (Metal Oxide)	60 V	90A (Tj)	4.5V, 10V	2.2V @ 29µA	36.7 nC @ 10 V	2500 pF @ 30 V	±16V	-	71W (Tc)	5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSDSON-8-33	8-PowerTDFN
IRFH5210TR2PBF	Infineon Technologies	MOSFET N-CH 100V 10A 5X6 PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 14.9mOhm @ 33A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	pacote: -	Request a Quote	MOSFET (Metal Oxide)	100 V	10A (Ta), 55A (Tc)	-	4V @ 100µA	59 nC @ 10 V	2570 pF @ 25 V	-	-	-	14.9mOhm @ 33A, 10V	-	Surface Mount	8-PQFN (5x6)	8-PowerVDFN
SPW35N60C3FKSA1	Infineon Technologies	MOSFET N-CH 650V 34.6A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 34.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1.9mA Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 21.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	pacote: -	Estoque582	MOSFET (Metal Oxide)	650 V	34.6A (Tc)	10V	3.9V @ 1.9mA	200 nC @ 10 V	4500 pF @ 25 V	±20V	-	313W (Tc)	100mOhm @ 21.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IPB65R125C7ATMA2	Infineon Technologies	MOSFET N-CH 650V 18A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 101W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacote: -	Estoque2.994	MOSFET (Metal Oxide)	650 V	18A (Tc)	10V	4V @ 440µA	35 nC @ 10 V	1670 pF @ 400 V	±20V	-	101W (Tc)	125mOhm @ 8.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRF100P219XKMA1	Infineon Technologies	MOSFET N-CH 100V TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 203A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 278µA Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 341W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	pacote: -	Request a Quote	MOSFET (Metal Oxide)	100 V	203A (Tc)	6V, 10V	3.8V @ 278µA	270 nC @ 10 V	12020 pF @ 50 V	±20V	-	341W (Tc)	1.7mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IPT65R190CFD7XTMA1	Infineon Technologies	MOSFET N-CH 650V 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TOLL Package / Case: 8-PowerSFN	pacote: -	Request a Quote	MOSFET (Metal Oxide)	650 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	TOLL	8-PowerSFN
IPTC063N15NM5ATMA1	Infineon Technologies	OPTIMOS 5 POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.6V @ 163µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-16-2 Package / Case: 16-PowerSOP Module	pacote: -	Request a Quote	MOSFET (Metal Oxide)	150 V	16.2A (Ta), 122A (Tc)	8V, 10V	4.6V @ 163µA	63 nC @ 10 V	4800 pF @ 75 V	±20V	-	3.8W (Ta), 214W (Tc)	6.3mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HDSOP-16-2	16-PowerSOP Module
IPP026N10NF2SAKMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 184A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 169µA Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	pacote: -	Estoque4.491	MOSFET (Metal Oxide)	100 V	27A (Ta), 184A (Tc)	6V, 10V	3.8V @ 169µA	154 nC @ 10 V	7300 pF @ 50 V	±20V	-	3.8W (Ta), 250W (Tc)	2.6mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
AUIRFN8478TR	Infineon Technologies	AUIRFN8478 - 20V-40V N-CHANNEL A FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIMBG120R040M1XTMA1	Infineon Technologies	SIC_DISCRETE FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 48A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-12 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	pacote: -	Estoque1.389	SiCFET (Silicon Carbide)	1200 V	48A	-	-	-	-	-	-	-	-	-55°C ~ 175°C	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPP030N06NF2SAKMA1	Infineon Technologies	TRENCH 40<-<100V PG-TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 119A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 3.05mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-U05 Package / Case: TO-220-3	pacote: -	Estoque2.748	MOSFET (Metal Oxide)	60 V	26A (Ta), 119A (Tc)	6V, 10V	3.3V @ 80µA	102 nC @ 10 V	4600 pF @ 30 V	±20V	-	3.8W (Ta), 150W (Tc)	3.05mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-U05	TO-220-3
BSC019N04LSTATMA1	Infineon Technologies	MOSFET N-CH 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 161A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TA) Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Estoque15.000	MOSFET (Metal Oxide)	40 V	28A (Ta), 161A (Tc)	4.5V, 10V	2V @ 250µA	57 nC @ 10 V	4060 pF @ 20 V	±20V	-	94W (Tc)	1.9mOhm @ 50A, 10V	-55°C ~ 175°C (TA)	-	-	-
AUIRFSL4010-306	Infineon Technologies	MOSFET N-CH 100V 180A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	pacote: -	Request a Quote	MOSFET (Metal Oxide)	100 V	180A (Tc)	10V	4V @ 250µA	215 nC @ 10 V	9575 pF @ 50 V	±20V	-	375W (Tc)	4.7mOhm @ 106A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2PAK, TO-262AA
IPDD60R170CFD7XTMA1	Infineon Technologies	MOSFET N-CH 600V 19A HDSOP-10 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4.5V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 137W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 4.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-10-1 Package / Case: 10-PowerSOP Module	pacote: -	Estoque141	MOSFET (Metal Oxide)	600 V	19A (Tc)	-	4.5V @ 240µA	23 nC @ 10 V	1016 pF @ 400 V	±20V	-	137W (Tc)	170mOhm @ 4.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-10-1	10-PowerSOP Module
IPD65R420CFDATMA2	Infineon Technologies	MOSFET N-CH 650V 8.7A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83.3W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-341 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacote: -	Estoque7.470	MOSFET (Metal Oxide)	650 V	8.7A (Tc)	10V	4.5V @ 300µA	31.5 nC @ 10 V	870 pF @ 100 V	±20V	-	83.3W (Tc)	420mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3-341	TO-252-3, DPAK (2 Leads + Tab), SC-63
AUIRFSL4010-313	Infineon Technologies	MOSFET N-CH 100V 180A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	pacote: -	Request a Quote	MOSFET (Metal Oxide)	100 V	180A (Tc)	10V	4V @ 250µA	215 nC @ 10 V	9575 pF @ 50 V	±20V	-	375W (Tc)	4.7mOhm @ 106A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2PAK, TO-262AA
ISC0602NLSATMA1	Infineon Technologies	MOSFET N-CH 80V 14A/66A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 29µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	pacote: -	Estoque34.731	MOSFET (Metal Oxide)	80 V	14A (Ta), 66A (Tc)	4.5V, 10V	2.3V @ 29µA	22 nC @ 10 V	1800 pF @ 40 V	±20V	-	2.5W (Ta), 60W (Tc)	7.3mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-6	8-PowerTDFN
IRFH8325TR2PBF	Infineon Technologies	MOSFET N-CH 30V 17A 5X6 PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.35V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2487 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	pacote: -	Request a Quote	MOSFET (Metal Oxide)	30 V	21A (Ta), 82A (Tc)	-	2.35V @ 50µA	32 nC @ 10 V	2487 pF @ 10 V	-	-	-	5mOhm @ 20A, 10V	-	Surface Mount	PQFN (5x6)	8-PowerTDFN
IAUW162N04S4LX7SA1	Infineon Technologies	MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IMW65R050M2HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ISZ75DP15LMATMA1	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Estoque15.000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SPA02N80C3XKSA1	Infineon Technologies	MOSFET N-CH 800V 2A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30.5W (Tc) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-31 Package / Case: TO-220-3 Full Pack	pacote: -	Request a Quote	MOSFET (Metal Oxide)	800 V	2A (Tc)	10V	3.9V @ 120µA	16 nC @ 10 V	290 pF @ 100 V	±20V	-	30.5W (Tc)	2.7Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-31	TO-220-3 Full Pack
IRFC250NB	Infineon Technologies	MOSFET 200V DIE FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	pacote: -	Request a Quote	MOSFET (Metal Oxide)	200 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	Die	Die