Página 51 - Infineon Technologies Produtos - Transistores - FET, MOSFET - Simples

BSZ011NE2LS5IATMA1

Infineon Technologies

MOSFET N-CH 25V 35A/40A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-FL
Package / Case: 8-PowerTDFN

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MOSFET (Metal Oxide)

25 V

35A (Ta), 40A (Tc)

4.5V, 10V

2V @ 250µA

50 nC @ 10 V

3400 pF @ 12 V

±16V

-

2.1W (Ta), 69W (Tc)

1.1mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSDSON-8-FL

8-PowerTDFN

IPI90R340C3XKSA2

Infineon Technologies

MOSFET N-CH 900V 15A TO262-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3-1
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA

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Estoque1.500

MOSFET (Metal Oxide)

900 V

15A (Tc)

10V

3.5V @ 1mA

94 nC @ 10 V

2400 pF @ 100 V

±20V

-

208W (Tc)

340mOhm @ 9.2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO262-3-1

TO-262-3 Long Leads, I2PAK, TO-262AA

IRLML2803TRPBF-1

Infineon Technologies

MOSFET N-CH 30V 1.2A SOT23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 910mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Micro3™/SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

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MOSFET (Metal Oxide)

30 V

1.2A (Ta)

-

1V @ 250µA

5 nC @ 10 V

85 pF @ 25 V

±20V

-

540mW (Ta)

250mOhm @ 910mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

Micro3™/SOT-23

TO-236-3, SC-59, SOT-23-3

IPW60R045CPFKSA1

Infineon Technologies

MOSFET N-CH 650V 60A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 431W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

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Estoque7.089

MOSFET (Metal Oxide)

650 V

60A (Tc)

10V

3.5V @ 3mA

190 nC @ 10 V

6800 pF @ 100 V

±20V

-

431W (Tc)

45mOhm @ 44A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-1

TO-247-3

IPT60T022S7XTMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

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-

IAUC80N04S6N036ATMA1

Infineon Technologies

IAUC80N04S6N036ATMA1

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs(th) (Max) @ Id: 3V @ 18µA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 3.68mOhm @ 40A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

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Estoque54.270

MOSFET (Metal Oxide)

40 V

80A (Tc)

7V, 10V

3V @ 18µA

22 nC @ 10 V

1338 pF @ 25 V

±20V

-

50W (Tc)

3.68mOhm @ 40A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

IPB95R310PFD7ATMA1

Infineon Technologies

LOW POWER_NEW

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 950 V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 400 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 10.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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MOSFET (Metal Oxide)

950 V

17.5A (Tc)

10V

3.5V @ 520µA

61 nC @ 10 V

1765 pF @ 400 V

±30V

-

125W (Tc)

310mOhm @ 10.4A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IMZA65R072M1HXKSA1

Infineon Technologies

MOSFET 650V NCH SIC TRENCH

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5.7V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V
Vgs (Max): +23V, -5V
FET Feature: -
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-3
Package / Case: TO-247-4

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Estoque699

SiCFET (Silicon Carbide)

650 V

28A (Tc)

18V

5.7V @ 4mA

22 nC @ 18 V

744 pF @ 400 V

+23V, -5V

-

96W (Tc)

94mOhm @ 13.3A, 18V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-4-3

TO-247-4

IPB60R080P7ATMA1

Infineon Technologies

MOSFET N-CH 600V 37A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 129W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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MOSFET (Metal Oxide)

600 V

37A (Tc)

10V

4V @ 590µA

51 nC @ 10 V

2180 pF @ 400 V

±20V

-

129W (Tc)

80mOhm @ 11.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IAUTN12S5N018GATMA1

Infineon Technologies

MOSFET_(120V 300V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOG-8-1
Package / Case: 8-PowerSMD, Gull Wing

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Estoque5.292

MOSFET (Metal Oxide)

120 V

-

-55°C ~ 175°C

Surface Mount

PG-HSOG-8-1

8-PowerSMD, Gull Wing

ISZ062N06NM6ATMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

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-

IPP020N06NXKSA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 143µA
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

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MOSFET (Metal Oxide)

60 V

120A (Tc)

6V, 10V

3.3V @ 143µA

124 nC @ 10 V

9750 pF @ 30 V

±20V

-

3W (Ta), 214W (Tc)

2mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

BSB053N03LPG

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: MG-WDSON-2, CanPAK M™
Package / Case: 3-WDSON

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MOSFET (Metal Oxide)

30 V

17A (Ta), 71A (Tc)

4.5V, 10V

2.2V @ 250µA

29 nC @ 10 V

2700 pF @ 15 V

±20V

-

2.3W (Ta), 42W (Tc)

5.3mOhm @ 30A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

MG-WDSON-2, CanPAK M™

3-WDSON

IPD90R1K2C3ATMA2

Infineon Technologies

MOSFET N-CH 900V 2.1A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacote: -

Estoque11.673

MOSFET (Metal Oxide)

900 V

5.1A (Tc)

10V

3.5V @ 310µA

3.2 nC @ 10 V

710 pF @ 100 V

±20V

-

83W (Tc)

1.2Ohm @ 2.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPAK (2 Leads + Tab), SC-63

IMW120R350M1HXKSA1

Infineon Technologies

SICFET N-CH 1.2KV 4.7A TO247-3

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs(th) (Max) @ Id: 5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
Vgs (Max): +23V, -7V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 2A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-41
Package / Case: TO-247-3

pacote: -

Estoque3.627

SiCFET (Silicon Carbide)

1200 V

4.7A (Tc)

15V, 18V

5.7V @ 1mA

5.3 nC @ 18 V

182 pF @ 800 V

+23V, -7V

-

60W (Tc)

455mOhm @ 2A, 18V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-3-41

TO-247-3

IRFU024NPBFAKLA1

Infineon Technologies

MOSFET N-CH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: IPAK (TO-251AA)
Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA

pacote: -

Estoque21.585

MOSFET (Metal Oxide)

55 V

17A (Tc)

10V

4V @ 250µA

20 nC @ 10 V

370 pF @ 25 V

±20V

-

45W (Tc)

75mOhm @ 10A, 10V

-55°C ~ 175°C (TJ)

Through Hole

IPAK (TO-251AA)

TO-251-3 Short Leads, IPAK, TO-251AA

IPD90P03P404ATMA2

Infineon Technologies

MOSFET P-CH 30V 90A TO252-31

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 253µA
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacote: -

Estoque40.590

MOSFET (Metal Oxide)

30 V

90A (Tc)

-

4V @ 253µA

130 nC @ 10 V

10300 pF @ 25 V

±20V

-

137W (Tc)

4.5mOhm @ 90A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-11

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPLK70R900P7ATMA1

Infineon Technologies

MOSFET N-CH 700V TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

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MOSFET (Metal Oxide)

700 V

-

Surface Mount

PG-TDSON-8

8-PowerTDFN

SPB04N60C3ATMA1

Infineon Technologies

MOSFET N-CH 650V 4.5A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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MOSFET (Metal Oxide)

650 V

4.5A (Tc)

10V

3.9V @ 200µA

25 nC @ 10 V

490 pF @ 25 V

±20V

-

50W (Tc)

950mOhm @ 2.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPW60R125CPFKSA1

Infineon Technologies

MOSFET N-CH 600V 25A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

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MOSFET (Metal Oxide)

600 V

25A (Tc)

10V

3.5V @ 1.1mA

70 nC @ 10 V

2500 pF @ 100 V

±20V

-

208W (Tc)

125mOhm @ 16A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-1

TO-247-3

IPAW60R360P7SE8228XKSA1

Infineon Technologies

MOSFET N-CH 600V 9A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 22W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

pacote: -

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MOSFET (Metal Oxide)

600 V

9A (Tc)

10V

4V @ 140µA

13 nC @ 10 V

555 pF @ 400 V

±20V

-

22W (Tc)

360mOhm @ 2.7A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

IGLD60R190D1AUMA3

Infineon Technologies

GAN HV

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Vgs (Max): -10V
FET Feature: -
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-LSON-8-1
Package / Case: 8-LDFN Exposed Pad

pacote: -

Estoque6.882

GaNFET (Gallium Nitride)

600 V

10A (Tc)

-

1.6V @ 960µA

-

157 pF @ 400 V

-10V

-

62.5W (Tc)

-

-55°C ~ 150°C (TJ)

Surface Mount

PG-LSON-8-1

8-LDFN Exposed Pad

IGLD60R190D1AUMA1

Infineon Technologies

GAN N-CH 600V 10A LSON-8

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Vgs (Max): -10V
FET Feature: -
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-LSON-8-1
Package / Case: 8-LDFN Exposed Pad

pacote: -

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GaNFET (Gallium Nitride)

600 V

10A (Tc)

-

1.6V @ 960µA

-

157 pF @ 400 V

-10V

-

62.5W (Tc)

-

-55°C ~ 150°C (TJ)

Surface Mount

PG-LSON-8-1

8-LDFN Exposed Pad

IRFH5302DTR2PBF

Infineon Technologies

MOSFET N-CH 30V 29A 8VQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PQFN (5x6) Single Die
Package / Case: 8-PowerVDFN

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MOSFET (Metal Oxide)

30 V

29A (Ta), 100A (Tc)

-

2.35V @ 100µA

55 nC @ 10 V

3635 pF @ 25 V

-

2.5mOhm @ 50A, 10V

-

Surface Mount

PQFN (5x6) Single Die

8-PowerVDFN

IPP129N10NF2SAKMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

pacote: -

Estoque3.003

MOSFET (Metal Oxide)

100 V

12A (Ta), 52A (Tc)

6V, 10V

3.8V @ 30µA

28 nC @ 10 V

1300 pF @ 50 V

±20V

-

3.8W (Ta), 71W (Tc)

12.9mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IPDD60R125G7XTMA1

Infineon Technologies

MOSFET N-CH 600V 20A HDSOP-10

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 320µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-10-1
Package / Case: 10-PowerSOP Module

pacote: -

Estoque5.061

MOSFET (Metal Oxide)

600 V

20A (Tc)

10V

4V @ 320µA

27 nC @ 10 V

1080 pF @ 400 V

±20V

-

120W (Tc)

125mOhm @ 6.4A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-10-1

10-PowerSOP Module

IRFB4229PBFXKMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

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MOSFET (Metal Oxide)

250 V

46A (Tc)

10V

5V @ 250µA

110 nC @ 10 V

4560 pF @ 25 V

±30V

-

330W (Tc)

46mOhm @ 26A, 10V

-40°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

IPB0401NM5SATMA1

Infineon Technologies

TRENCH >=100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

Estoque2.970

-

Nº de peças	Fabricante	Descrição	pacote	Estoque	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSZ011NE2LS5IATMA1	Infineon Technologies	MOSFET N-CH 25V 35A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	pacote: -	Request a Quote	MOSFET (Metal Oxide)	25 V	35A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	50 nC @ 10 V	3400 pF @ 12 V	±16V	-	2.1W (Ta), 69W (Tc)	1.1mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
IPI90R340C3XKSA2	Infineon Technologies	MOSFET N-CH 900V 15A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	pacote: -	Estoque1.500	MOSFET (Metal Oxide)	900 V	15A (Tc)	10V	3.5V @ 1mA	94 nC @ 10 V	2400 pF @ 100 V	±20V	-	208W (Tc)	340mOhm @ 9.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2PAK, TO-262AA
IRLML2803TRPBF-1	Infineon Technologies	MOSFET N-CH 30V 1.2A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540mW (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 910mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro3™/SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	pacote: -	Request a Quote	MOSFET (Metal Oxide)	30 V	1.2A (Ta)	-	1V @ 250µA	5 nC @ 10 V	85 pF @ 25 V	±20V	-	540mW (Ta)	250mOhm @ 910mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
IPW60R045CPFKSA1	Infineon Technologies	MOSFET N-CH 650V 60A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 431W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	pacote: -	Estoque7.089	MOSFET (Metal Oxide)	650 V	60A (Tc)	10V	3.5V @ 3mA	190 nC @ 10 V	6800 pF @ 100 V	±20V	-	431W (Tc)	45mOhm @ 44A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IPT60T022S7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IAUC80N04S6N036ATMA1	Infineon Technologies	IAUC80N04S6N036ATMA1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3V @ 18µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 3.68mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	pacote: -	Estoque54.270	MOSFET (Metal Oxide)	40 V	80A (Tc)	7V, 10V	3V @ 18µA	22 nC @ 10 V	1338 pF @ 25 V	±20V	-	50W (Tc)	3.68mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPB95R310PFD7ATMA1	Infineon Technologies	LOW POWER_NEW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950 V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 520µA Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 10.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacote: -	Request a Quote	MOSFET (Metal Oxide)	950 V	17.5A (Tc)	10V	3.5V @ 520µA	61 nC @ 10 V	1765 pF @ 400 V	±30V	-	125W (Tc)	310mOhm @ 10.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IMZA65R072M1HXKSA1	Infineon Technologies	MOSFET 650V NCH SIC TRENCH FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.7V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-3 Package / Case: TO-247-4	pacote: -	Estoque699	SiCFET (Silicon Carbide)	650 V	28A (Tc)	18V	5.7V @ 4mA	22 nC @ 18 V	744 pF @ 400 V	+23V, -5V	-	96W (Tc)	94mOhm @ 13.3A, 18V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4-3	TO-247-4
IPB60R080P7ATMA1	Infineon Technologies	MOSFET N-CH 600V 37A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 129W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacote: -	Request a Quote	MOSFET (Metal Oxide)	600 V	37A (Tc)	10V	4V @ 590µA	51 nC @ 10 V	2180 pF @ 400 V	±20V	-	129W (Tc)	80mOhm @ 11.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IAUTN12S5N018GATMA1	Infineon Technologies	MOSFET_(120V 300V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Supplier Device Package: PG-HSOG-8-1 Package / Case: 8-PowerSMD, Gull Wing	pacote: -	Estoque5.292	MOSFET (Metal Oxide)	120 V	-	-	-	-	-	-	-	-	-	-55°C ~ 175°C	Surface Mount	PG-HSOG-8-1	8-PowerSMD, Gull Wing
ISZ062N06NM6ATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP020N06NXKSA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 143µA Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	pacote: -	Request a Quote	MOSFET (Metal Oxide)	60 V	120A (Tc)	6V, 10V	3.3V @ 143µA	124 nC @ 10 V	9750 pF @ 30 V	±20V	-	3W (Ta), 214W (Tc)	2mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
BSB053N03LPG	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2, CanPAK M™ Package / Case: 3-WDSON	pacote: -	Request a Quote	MOSFET (Metal Oxide)	30 V	17A (Ta), 71A (Tc)	4.5V, 10V	2.2V @ 250µA	29 nC @ 10 V	2700 pF @ 15 V	±20V	-	2.3W (Ta), 42W (Tc)	5.3mOhm @ 30A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	MG-WDSON-2, CanPAK M™	3-WDSON
IPD90R1K2C3ATMA2	Infineon Technologies	MOSFET N-CH 900V 2.1A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 310µA Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacote: -	Estoque11.673	MOSFET (Metal Oxide)	900 V	5.1A (Tc)	10V	3.5V @ 310µA	3.2 nC @ 10 V	710 pF @ 100 V	±20V	-	83W (Tc)	1.2Ohm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IMW120R350M1HXKSA1	Infineon Technologies	SICFET N-CH 1.2KV 4.7A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 5.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V Vgs (Max): +23V, -7V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 455mOhm @ 2A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	pacote: -	Estoque3.627	SiCFET (Silicon Carbide)	1200 V	4.7A (Tc)	15V, 18V	5.7V @ 1mA	5.3 nC @ 18 V	182 pF @ 800 V	+23V, -7V	-	60W (Tc)	455mOhm @ 2A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
IRFU024NPBFAKLA1	Infineon Technologies	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251AA) Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	pacote: -	Estoque21.585	MOSFET (Metal Oxide)	55 V	17A (Tc)	10V	4V @ 250µA	20 nC @ 10 V	370 pF @ 25 V	±20V	-	45W (Tc)	75mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)	TO-251-3 Short Leads, IPAK, TO-251AA
IPD90P03P404ATMA2	Infineon Technologies	MOSFET P-CH 30V 90A TO252-31 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 253µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 137W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacote: -	Estoque40.590	MOSFET (Metal Oxide)	30 V	90A (Tc)	-	4V @ 253µA	130 nC @ 10 V	10300 pF @ 25 V	±20V	-	137W (Tc)	4.5mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPLK70R900P7ATMA1	Infineon Technologies	MOSFET N-CH 700V TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	pacote: -	Request a Quote	MOSFET (Metal Oxide)	700 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-TDSON-8	8-PowerTDFN
SPB04N60C3ATMA1	Infineon Technologies	MOSFET N-CH 650V 4.5A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacote: -	Request a Quote	MOSFET (Metal Oxide)	650 V	4.5A (Tc)	10V	3.9V @ 200µA	25 nC @ 10 V	490 pF @ 25 V	±20V	-	50W (Tc)	950mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPW60R125CPFKSA1	Infineon Technologies	MOSFET N-CH 600V 25A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	pacote: -	Request a Quote	MOSFET (Metal Oxide)	600 V	25A (Tc)	10V	3.5V @ 1.1mA	70 nC @ 10 V	2500 pF @ 100 V	±20V	-	208W (Tc)	125mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IPAW60R360P7SE8228XKSA1	Infineon Technologies	MOSFET N-CH 600V 9A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 22W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	pacote: -	Request a Quote	MOSFET (Metal Oxide)	600 V	9A (Tc)	10V	4V @ 140µA	13 nC @ 10 V	555 pF @ 400 V	±20V	-	22W (Tc)	360mOhm @ 2.7A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IGLD60R190D1AUMA3	Infineon Technologies	GAN HV FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 960µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-LSON-8-1 Package / Case: 8-LDFN Exposed Pad	pacote: -	Estoque6.882	GaNFET (Gallium Nitride)	600 V	10A (Tc)	-	1.6V @ 960µA	-	157 pF @ 400 V	-10V	-	62.5W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-LSON-8-1	8-LDFN Exposed Pad
IGLD60R190D1AUMA1	Infineon Technologies	GAN N-CH 600V 10A LSON-8 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 960µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-LSON-8-1 Package / Case: 8-LDFN Exposed Pad	pacote: -	Request a Quote	GaNFET (Gallium Nitride)	600 V	10A (Tc)	-	1.6V @ 960µA	-	157 pF @ 400 V	-10V	-	62.5W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-LSON-8-1	8-LDFN Exposed Pad
IRFH5302DTR2PBF	Infineon Technologies	MOSFET N-CH 30V 29A 8VQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Single Die Package / Case: 8-PowerVDFN	pacote: -	Request a Quote	MOSFET (Metal Oxide)	30 V	29A (Ta), 100A (Tc)	-	2.35V @ 100µA	55 nC @ 10 V	3635 pF @ 25 V	-	-	-	2.5mOhm @ 50A, 10V	-	Surface Mount	PQFN (5x6) Single Die	8-PowerVDFN
IPP129N10NF2SAKMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 12.9mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	pacote: -	Estoque3.003	MOSFET (Metal Oxide)	100 V	12A (Ta), 52A (Tc)	6V, 10V	3.8V @ 30µA	28 nC @ 10 V	1300 pF @ 50 V	±20V	-	3.8W (Ta), 71W (Tc)	12.9mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IPDD60R125G7XTMA1	Infineon Technologies	MOSFET N-CH 600V 20A HDSOP-10 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-10-1 Package / Case: 10-PowerSOP Module	pacote: -	Estoque5.061	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	4V @ 320µA	27 nC @ 10 V	1080 pF @ 400 V	±20V	-	120W (Tc)	125mOhm @ 6.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-10-1	10-PowerSOP Module
IRFB4229PBFXKMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacote: -	Request a Quote	MOSFET (Metal Oxide)	250 V	46A (Tc)	10V	5V @ 250µA	110 nC @ 10 V	4560 pF @ 25 V	±30V	-	330W (Tc)	46mOhm @ 26A, 10V	-40°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPB0401NM5SATMA1	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Estoque2.970	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-