Página 45 - Infineon Technologies Produtos - Transistores - FET, MOSFET - Simples

IGLR60R340D1XUMA1

Infineon Technologies

GAN HV

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.6V @ 530µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 87.7 pF @ 400 V
Vgs (Max): -10V
FET Feature: -
Power Dissipation (Max): 41.6W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-7
Package / Case: 8-PowerTDFN

pacote: -

Estoque14.742

GaNFET (Gallium Nitride)

600 V

8.2A (Tc)

-

1.6V @ 530µA

-

87.7 pF @ 400 V

-10V

-

41.6W (Tc)

-

-40°C ~ 150°C (TJ)

Surface Mount

PG-TSON-8-7

8-PowerTDFN

IPB65R230CFD7AATMA1

Infineon Technologies

AUTOMOTIVE_COOLMOS PG-TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacote: -

Estoque2.565

MOSFET (Metal Oxide)

650 V

11A (Tc)

10V

4.5V @ 260µA

23 nC @ 10 V

1044 pF @ 400 V

±20V

-

63W (Tc)

230mOhm @ 5.2A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPDQ65R060CFD7XTMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 272W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

pacote: -

Estoque2.235

MOSFET (Metal Oxide)

650 V

45A (Tc)

10V

4.5V @ 820µA

65 nC @ 10 V

3288 pF @ 400 V

±20V

-

272W (Tc)

60mOhm @ 16.4A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-22-1

22-PowerBSOP Module

AUXVNGP4062D-E

Infineon Technologies

IC DISCRETE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

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-

IPLK70R750P7ATMA1

Infineon Technologies

MOSFET N-CH 700V TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

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MOSFET (Metal Oxide)

700 V

-

Surface Mount

PG-TDSON-8

8-PowerTDFN

IQD063N15NM5ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-U04
Package / Case: 8-PowerTDFN

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Estoque15.000

MOSFET (Metal Oxide)

150 V

14.1A (Ta), 148A (Tc)

8V, 10V

4.6V @ 159µA

60 nC @ 10 V

4700 pF @ 75 V

±20V

-

2.5W (Ta), 278W (Tc)

6.32mOhm @ 50A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSON-8-U04

8-PowerTDFN

IPB014N04NF2SATMA1

Infineon Technologies

TRENCH <= 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.4V @ 126µA
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacote: -

Estoque1.848

MOSFET (Metal Oxide)

40 V

38A (Ta), 191A (Tc)

6V, 10V

3.4V @ 126µA

159 nC @ 10 V

7500 pF @ 20 V

±20V

-

3.8W (Ta), 188W (Tc)

1.45mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPDQ65R060CFD7AXTMA1

Infineon Technologies

AUTOMOTIVE_COOLMOS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 272W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

pacote: -

Estoque1.500

MOSFET (Metal Oxide)

650 V

45A (Tc)

10V

4.5V @ 820µA

65 nC @ 10 V

3288 pF @ 400 V

±20V

-

272W (Tc)

60mOhm @ 16.4A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-22-1

22-PowerBSOP Module

BSC018NE2LSIATMA1

Infineon Technologies

MOSFET N-CH 25V 29A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-6
Package / Case: 8-PowerTDFN

pacote: -

Estoque27.750

MOSFET (Metal Oxide)

25 V

29A (Ta), 100A (Tc)

4.5V, 10V

2V @ 250µA

36 nC @ 10 V

2500 pF @ 12 V

±20V

-

2.5W (Ta), 69W (Tc)

1.8mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-6

8-PowerTDFN

IRLMS1503TR

Infineon Technologies

MOSFET N-CH 30V 3.2A 6-TSOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Micro6™(TSOP-6)
Package / Case: SOT-23-6

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MOSFET (Metal Oxide)

30 V

3.2A (Ta)

-

1V @ 250µA

9.6 nC @ 10 V

210 pF @ 25 V

-

100mOhm @ 2.2A, 10V

-

Surface Mount

Micro6™(TSOP-6)

SOT-23-6

IMZ120R140M1HXKSA1

Infineon Technologies

SICFET N-CH 1.2KV 19A TO247-4

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V
Vgs (Max): +23V, -7V
FET Feature: -
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-1
Package / Case: TO-247-4

pacote: -

Estoque696

SiCFET (Silicon Carbide)

1200 V

19A (Tc)

15V, 18V

5.7V @ 2.5mA

13 nC @ 18 V

454 pF @ 800 V

+23V, -7V

-

94W (Tc)

182mOhm @ 6A, 18V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-4-1

TO-247-4

BSC200P03LSG

Infineon Technologies

P-CHANNEL POWER MOSFET

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-6
Package / Case: 8-PowerTDFN

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MOSFET (Metal Oxide)

30 V

9.9A (Ta), 12.5A (Tc)

10V

1V @ 100µA

48.5 nC @ 10 V

2430 pF @ 15 V

±25V

-

2.5W (Ta), 63W (Tc)

20mOhm @ 12.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-6

8-PowerTDFN

BSZ0702LSATMA1

Infineon Technologies

MOSFET N-CH 60V 17A/40A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

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MOSFET (Metal Oxide)

60 V

17A (Ta), 40A (Tc)

4.5V, 10V

2.3V @ 36µA

22 nC @ 4.5 V

3100 pF @ 30 V

±20V

-

2.1W (Ta), 69W (Tc)

4mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8 FL

8-PowerTDFN

IAUC50N08S5N102ATMA1

Infineon Technologies

MOSFET_(75V 120V( PG-TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 24µA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1394 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-33
Package / Case: 8-PowerTDFN

pacote: -

Estoque21.330

MOSFET (Metal Oxide)

80 V

50A (Tj)

6V, 10V

3.8V @ 24µA

21 nC @ 10 V

1394 pF @ 40 V

±20V

-

60W (Tc)

10.2mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-33

8-PowerTDFN

IAUC120N04S6L009ATMA1

Infineon Technologies

MOSFET N-CH 40V 150A TDSON-8-34

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7806 pF @ 25 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 960mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-34
Package / Case: 8-PowerTDFN

pacote: -

Estoque68.232

MOSFET (Metal Oxide)

40 V

150A (Tc)

4.5V, 10V

2V @ 90µA

128 nC @ 10 V

7806 pF @ 25 V

±16V

-

150W (Tc)

960mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-34

8-PowerTDFN

SPD08N50C3BTMA1

Infineon Technologies

MOSFET N-CH 560V 7.6A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 560 V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

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MOSFET (Metal Oxide)

560 V

7.6A (Tc)

10V

3.9V @ 350µA

32 nC @ 10 V

750 pF @ 25 V

±20V

-

83W (Tc)

600mOhm @ 4.6A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3-11

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPP082N10NF2SAKMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 46µA
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

pacote: -

Estoque279

MOSFET (Metal Oxide)

100 V

15A (Ta), 77A (Tc)

6V, 10V

3.8V @ 46µA

42 nC @ 10 V

2000 pF @ 50 V

±20V

-

3.8W (Ta), 100W (Tc)

8.2mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IPDQ60R017S7XTMA1

Infineon Technologies

MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

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MOSFET (Metal Oxide)

600 V

30A (Tc)

12V

4.5V @ 1.89mA

196 nC @ 12 V

7370 pF @ 300 V

±20V

-

500W (Tc)

17mOhm @ 29A, 12V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-22-1

22-PowerBSOP Module

ISZ330N12LM6ATMA1

Infineon Technologies

OPTIMOS 6 POWER-TRANSISTOR,120V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8 FL
Package / Case: 8-PowerTDFN

pacote: -

Estoque15.000

MOSFET (Metal Oxide)

120 V

5.7A (Ta), 24A (Tc)

3.3V, 10V

2.2V @ 11µA

9 nC @ 10 V

650 pF @ 60 V

±20V

-

2.5W (Ta), 43W (Tc)

33mOhm @ 9A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSDSON-8 FL

8-PowerTDFN

IRF8707TRPBF-1

Infineon Technologies

MOSFET N-CH 30V 11A 8SO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)

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MOSFET (Metal Oxide)

30 V

11A (Ta)

4.5V, 10V

2.35V @ 25µA

9.3 nC @ 4.5 V

760 pF @ 15 V

±20V

-

2.5W (Ta)

11.9mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SOIC (0.154", 3.90mm Width)

IPA60R160P7XKSA1

Infineon Technologies

MOSFET N-CH 600V 20A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1317 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220 Full Pack
Package / Case: TO-220-3 Full Pack

pacote: -

Estoque423

MOSFET (Metal Oxide)

600 V

20A (Tc)

10V

4V @ 350µA

31 nC @ 10 V

1317 pF @ 400 V

±20V

-

26W (Tc)

160mOhm @ 6.3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220 Full Pack

TO-220-3 Full Pack

AUIRFS3107-7TRL

Infineon Technologies

MOSFET N-CH 75V 240A D2PAK-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75 V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 160A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (7-Lead)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

pacote: -

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MOSFET (Metal Oxide)

75 V

240A (Tc)

-

4V @ 250µA

240 nC @ 10 V

9200 pF @ 50 V

-

370W (Tc)

2.6mOhm @ 160A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK (7-Lead)

TO-263-7, D2PAK (6 Leads + Tab)

IPA105N15N3GXKSA1

Infineon Technologies

MOSFET N-CH 150V 37A TO220-FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4V @ 160µA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 40.5W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 37A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

pacote: -

Estoque231

MOSFET (Metal Oxide)

150 V

37A (Tc)

8V, 10V

4V @ 160µA

55 nC @ 10 V

4300 pF @ 75 V

±20V

-

40.5W (Tc)

10.5mOhm @ 37A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

ISK018NE1LM7AULA1

Infineon Technologies

ISK018NE1LM7AULA1 MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 15 V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 129A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs(th) (Max) @ Id: 2V @ 106µA
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 7.5 V
Vgs (Max): ±7V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 7V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-6-1
Package / Case: 6-PowerVDFN

pacote: -

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MOSFET (Metal Oxide)

15 V

30A (Ta), 129A (Tc)

4.5V, 7V

2V @ 106µA

13.6 nC @ 7 V

1600 pF @ 7.5 V

±7V

-

2.1W (Ta), 39W (Tc)

1.8mOhm @ 20A, 7V

-55°C ~ 150°C (TJ)

Surface Mount

PG-VSON-6-1

6-PowerVDFN

AUXNS0306RTRL

Infineon Technologies

MOSFET N-CH DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

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MOSFET (Metal Oxide)

-

IPA60R600P6XKSA1

Infineon Technologies

MOSFET N-CH 600V 4.9A TO220-FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

pacote: -

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MOSFET (Metal Oxide)

600 V

4.9A (Tc)

10V

4.5V @ 200µA

12 nC @ 10 V

557 pF @ 100 V

±20V

-

28W (Tc)

600mOhm @ 2.4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

IPP06CN10LG

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

pacote: -

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MOSFET (Metal Oxide)

100 V

100A (Tc)

4.5V, 10V

2.4V @ 180µA

124 nC @ 10 V

11900 pF @ 50 V

±20V

-

214W (Tc)

6.2mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IRF100P218AKMA1

Infineon Technologies

MOSFET N-CH 100V 209A TO247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Gate Charge (Qg) (Max) @ Vgs: 412 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 556W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

pacote: -

Estoque1.215

MOSFET (Metal Oxide)

100 V

209A (Tc)

6V, 10V

3.8V @ 278µA

412 nC @ 10 V

24000 pF @ 50 V

±20V

-

3.8W (Ta), 556W (Tc)

1.28mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

Nº de peças	Fabricante	Descrição	pacote	Estoque	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IGLR60R340D1XUMA1	Infineon Technologies	GAN HV FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 530µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 87.7 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 41.6W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-7 Package / Case: 8-PowerTDFN	pacote: -	Estoque14.742	GaNFET (Gallium Nitride)	600 V	8.2A (Tc)	-	1.6V @ 530µA	-	87.7 pF @ 400 V	-10V	-	41.6W (Tc)	-	-40°C ~ 150°C (TJ)	Surface Mount	PG-TSON-8-7	8-PowerTDFN
IPB65R230CFD7AATMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS PG-TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacote: -	Estoque2.565	MOSFET (Metal Oxide)	650 V	11A (Tc)	10V	4.5V @ 260µA	23 nC @ 10 V	1044 pF @ 400 V	±20V	-	63W (Tc)	230mOhm @ 5.2A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPDQ65R060CFD7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 820µA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 272W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	pacote: -	Estoque2.235	MOSFET (Metal Oxide)	650 V	45A (Tc)	10V	4.5V @ 820µA	65 nC @ 10 V	3288 pF @ 400 V	±20V	-	272W (Tc)	60mOhm @ 16.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
AUXVNGP4062D-E	Infineon Technologies	IC DISCRETE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPLK70R750P7ATMA1	Infineon Technologies	MOSFET N-CH 700V TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	pacote: -	Request a Quote	MOSFET (Metal Oxide)	700 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-TDSON-8	8-PowerTDFN
IQD063N15NM5ATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.6V @ 159µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-U04 Package / Case: 8-PowerTDFN	pacote: -	Estoque15.000	MOSFET (Metal Oxide)	150 V	14.1A (Ta), 148A (Tc)	8V, 10V	4.6V @ 159µA	60 nC @ 10 V	4700 pF @ 75 V	±20V	-	2.5W (Ta), 278W (Tc)	6.32mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSON-8-U04	8-PowerTDFN
IPB014N04NF2SATMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 126µA Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 188W (Tc) Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacote: -	Estoque1.848	MOSFET (Metal Oxide)	40 V	38A (Ta), 191A (Tc)	6V, 10V	3.4V @ 126µA	159 nC @ 10 V	7500 pF @ 20 V	±20V	-	3.8W (Ta), 188W (Tc)	1.45mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPDQ65R060CFD7AXTMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 820µA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 272W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	pacote: -	Estoque1.500	MOSFET (Metal Oxide)	650 V	45A (Tc)	10V	4.5V @ 820µA	65 nC @ 10 V	3288 pF @ 400 V	±20V	-	272W (Tc)	60mOhm @ 16.4A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
BSC018NE2LSIATMA1	Infineon Technologies	MOSFET N-CH 25V 29A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	pacote: -	Estoque27.750	MOSFET (Metal Oxide)	25 V	29A (Ta), 100A (Tc)	4.5V, 10V	2V @ 250µA	36 nC @ 10 V	2500 pF @ 12 V	±20V	-	2.5W (Ta), 69W (Tc)	1.8mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-6	8-PowerTDFN
IRLMS1503TR	Infineon Technologies	MOSFET N-CH 30V 3.2A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Micro6™(TSOP-6) Package / Case: SOT-23-6	pacote: -	Request a Quote	MOSFET (Metal Oxide)	30 V	3.2A (Ta)	-	1V @ 250µA	9.6 nC @ 10 V	210 pF @ 25 V	-	-	-	100mOhm @ 2.2A, 10V	-	Surface Mount	Micro6™(TSOP-6)	SOT-23-6
IMZ120R140M1HXKSA1	Infineon Technologies	SICFET N-CH 1.2KV 19A TO247-4 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 5.7V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V Vgs (Max): +23V, -7V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-1 Package / Case: TO-247-4	pacote: -	Estoque696	SiCFET (Silicon Carbide)	1200 V	19A (Tc)	15V, 18V	5.7V @ 2.5mA	13 nC @ 18 V	454 pF @ 800 V	+23V, -7V	-	94W (Tc)	182mOhm @ 6A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-1	TO-247-4
BSC200P03LSG	Infineon Technologies	P-CHANNEL POWER MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 12.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	pacote: -	Request a Quote	MOSFET (Metal Oxide)	30 V	9.9A (Ta), 12.5A (Tc)	10V	1V @ 100µA	48.5 nC @ 10 V	2430 pF @ 15 V	±25V	-	2.5W (Ta), 63W (Tc)	20mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-6	8-PowerTDFN
BSZ0702LSATMA1	Infineon Technologies	MOSFET N-CH 60V 17A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 36µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	pacote: -	Request a Quote	MOSFET (Metal Oxide)	60 V	17A (Ta), 40A (Tc)	4.5V, 10V	2.3V @ 36µA	22 nC @ 4.5 V	3100 pF @ 30 V	±20V	-	2.1W (Ta), 69W (Tc)	4mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
IAUC50N08S5N102ATMA1	Infineon Technologies	MOSFET_(75V 120V( PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 24µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1394 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-33 Package / Case: 8-PowerTDFN	pacote: -	Estoque21.330	MOSFET (Metal Oxide)	80 V	50A (Tj)	6V, 10V	3.8V @ 24µA	21 nC @ 10 V	1394 pF @ 40 V	±20V	-	60W (Tc)	10.2mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-33	8-PowerTDFN
IAUC120N04S6L009ATMA1	Infineon Technologies	MOSFET N-CH 40V 150A TDSON-8-34 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7806 pF @ 25 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 960mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-34 Package / Case: 8-PowerTDFN	pacote: -	Estoque68.232	MOSFET (Metal Oxide)	40 V	150A (Tc)	4.5V, 10V	2V @ 90µA	128 nC @ 10 V	7806 pF @ 25 V	±16V	-	150W (Tc)	960mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-34	8-PowerTDFN
SPD08N50C3BTMA1	Infineon Technologies	MOSFET N-CH 560V 7.6A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560 V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	pacote: -	Request a Quote	MOSFET (Metal Oxide)	560 V	7.6A (Tc)	10V	3.9V @ 350µA	32 nC @ 10 V	750 pF @ 25 V	±20V	-	83W (Tc)	600mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPP082N10NF2SAKMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 46µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	pacote: -	Estoque279	MOSFET (Metal Oxide)	100 V	15A (Ta), 77A (Tc)	6V, 10V	3.8V @ 46µA	42 nC @ 10 V	2000 pF @ 50 V	±20V	-	3.8W (Ta), 100W (Tc)	8.2mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IPDQ60R017S7XTMA1	Infineon Technologies	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4.5V @ 1.89mA Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	pacote: -	Request a Quote	MOSFET (Metal Oxide)	600 V	30A (Tc)	12V	4.5V @ 1.89mA	196 nC @ 12 V	7370 pF @ 300 V	±20V	-	500W (Tc)	17mOhm @ 29A, 12V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
ISZ330N12LM6ATMA1	Infineon Technologies	OPTIMOS 6 POWER-TRANSISTOR,120V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs(th) (Max) @ Id: 2.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 FL Package / Case: 8-PowerTDFN	pacote: -	Estoque15.000	MOSFET (Metal Oxide)	120 V	5.7A (Ta), 24A (Tc)	3.3V, 10V	2.2V @ 11µA	9 nC @ 10 V	650 pF @ 60 V	±20V	-	2.5W (Ta), 43W (Tc)	33mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSDSON-8 FL	8-PowerTDFN
IRF8707TRPBF-1	Infineon Technologies	MOSFET N-CH 30V 11A 8SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	pacote: -	Request a Quote	MOSFET (Metal Oxide)	30 V	11A (Ta)	4.5V, 10V	2.35V @ 25µA	9.3 nC @ 4.5 V	760 pF @ 15 V	±20V	-	2.5W (Ta)	11.9mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IPA60R160P7XKSA1	Infineon Technologies	MOSFET N-CH 600V 20A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1317 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 6.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	pacote: -	Estoque423	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	4V @ 350µA	31 nC @ 10 V	1317 pF @ 400 V	±20V	-	26W (Tc)	160mOhm @ 6.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
AUIRFS3107-7TRL	Infineon Technologies	MOSFET N-CH 75V 240A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 160A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	pacote: -	Request a Quote	MOSFET (Metal Oxide)	75 V	240A (Tc)	-	4V @ 250µA	240 nC @ 10 V	9200 pF @ 50 V	-	-	370W (Tc)	2.6mOhm @ 160A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2PAK (6 Leads + Tab)
IPA105N15N3GXKSA1	Infineon Technologies	MOSFET N-CH 150V 37A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 160µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40.5W (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 37A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	pacote: -	Estoque231	MOSFET (Metal Oxide)	150 V	37A (Tc)	8V, 10V	4V @ 160µA	55 nC @ 10 V	4300 pF @ 75 V	±20V	-	40.5W (Tc)	10.5mOhm @ 37A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
ISK018NE1LM7AULA1	Infineon Technologies	ISK018NE1LM7AULA1 MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 15 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 129A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs(th) (Max) @ Id: 2V @ 106µA Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 7.5 V Vgs (Max): ±7V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-6-1 Package / Case: 6-PowerVDFN	pacote: -	Request a Quote	MOSFET (Metal Oxide)	15 V	30A (Ta), 129A (Tc)	4.5V, 7V	2V @ 106µA	13.6 nC @ 7 V	1600 pF @ 7.5 V	±7V	-	2.1W (Ta), 39W (Tc)	1.8mOhm @ 20A, 7V	-55°C ~ 150°C (TJ)	Surface Mount	PG-VSON-6-1	6-PowerVDFN
AUXNS0306RTRL	Infineon Technologies	MOSFET N-CH DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Request a Quote	MOSFET (Metal Oxide)	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPA60R600P6XKSA1	Infineon Technologies	MOSFET N-CH 600V 4.9A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	pacote: -	Request a Quote	MOSFET (Metal Oxide)	600 V	4.9A (Tc)	10V	4.5V @ 200µA	12 nC @ 10 V	557 pF @ 100 V	±20V	-	28W (Tc)	600mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPP06CN10LG	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	pacote: -	Request a Quote	MOSFET (Metal Oxide)	100 V	100A (Tc)	4.5V, 10V	2.4V @ 180µA	124 nC @ 10 V	11900 pF @ 50 V	±20V	-	214W (Tc)	6.2mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IRF100P218AKMA1	Infineon Technologies	MOSFET N-CH 100V 209A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 278µA Gate Charge (Qg) (Max) @ Vgs: 412 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 556W (Tc) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	pacote: -	Estoque1.215	MOSFET (Metal Oxide)	100 V	209A (Tc)	6V, 10V	3.8V @ 278µA	412 nC @ 10 V	24000 pF @ 50 V	±20V	-	3.8W (Ta), 556W (Tc)	1.28mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3	TO-247-3