Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET P-CH 60V 22A TO252-3
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pacote: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 22A (Tc) | 10V | 4V @ 1.04mA | 39 nC @ 10 V | 1600 pF @ 30 V | ±20V | - | 83W (Tc) | 65mOhm @ 22A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 80V 165A HSOG-8
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pacote: - |
Estoque4.122 |
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MOSFET (Metal Oxide) | 80 V | 165A (Tc) | 6V, 10V | 3.8V @ 108µA | 90 nC @ 10 V | 6370 pF @ 40 V | ±20V | - | 167W (Tc) | 2.9mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK
|
pacote: - |
Request a Quote |
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MOSFET (Metal Oxide) | 55 V | 42A (Tc) | - | 4V @ 250µA | 44 nC @ 10 V | 1380 pF @ 25 V | - | - | - | 14.5mOhm @ 36A, 10V | - | Surface Mount | TO-252AA (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
HIGH POWER_NEW
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pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 19A (Tc) | 10V | 4.5V @ 420µA | 36 nC @ 10 V | 1694 pF @ 400 V | ±20V | - | 98W (Tc) | 125mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
TRENCH 40<-<100V
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pacote: - |
Estoque1.773 |
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MOSFET (Metal Oxide) | 80 V | 35A (Ta), 196A (Tc) | 6V, 10V | 3.8V @ 267µA | 255 nC @ 10 V | 12000 pF @ 40 V | ±20V | - | 3.8W (Ta), 300W (Tc) | 1.6mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET 55V 17A DIE
|
pacote: - |
Request a Quote |
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MOSFET (Metal Oxide) | 55 V | 17A | 10V | - | - | - | - | - | - | 65mOhm @ 17A, 10V | - | Surface Mount | Die | Die |
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Infineon Technologies |
IC DISCRETE
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
POWER FIELD-EFFECT TRANSISTOR, 1
|
pacote: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TO220-3-5 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
AUTOMOTIVE_COOLMOS
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pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET P-CH 60V 1.9A SOT223-4
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pacote: - |
Estoque3.861 |
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MOSFET (Metal Oxide) | 60 V | 1.9A (Ta) | 4.5V, 10V | 2V @ 270µA | 13.9 nC @ 10 V | 420 pF @ 30 V | ±20V | - | 1.8W (Ta), 5W (Tc) | 250mOhm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8-6
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pacote: - |
Estoque14.031 |
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MOSFET (Metal Oxide) | 40 V | 381A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 94 nC @ 4.5 V | 8400 pF @ 20 V | ±20V | - | 188W | 0.7mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
TRENCH <= 40V
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pacote: - |
Estoque29.940 |
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MOSFET (Metal Oxide) | 15 V | 58A (Ta), 379A (Tc) | 4.5V, 7V | 2V @ 432µA | 55 nC @ 7 V | 6240 pF @ 7.5 V | ±7V | - | 2.1W (Ta), 89W (Tc) | 0.45mOhm @ 30A, 7V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TTFN-9-3 | 9-PowerTDFN |
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Infineon Technologies |
OPTIMOS 6 POWER-TRANSISTOR
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pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 42A (Ta), 445A (Tc) | 6V, 10V | 3.3V @ 163µA | 150 nC @ 10 V | 12000 pF @ 30 V | ±20V | - | 3W (Ta), 333W (Tc) | 0.9mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TTFN-9-U02 | 9-PowerTDFN |
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Infineon Technologies |
MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 10V | 4V @ 85µA | 51 nC @ 10 V | 3670 pF @ 25 V | ±20V | - | 58W (Tc) | 12.6mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
SILICON CARBIDE MOSFET
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
HIGH POWER_NEW
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pacote: - |
Estoque8.550 |
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MOSFET (Metal Oxide) | 650 V | 25A (Tc) | 10V | 4.5V @ 630µA | 53 nC @ 10 V | 2513 pF @ 400 V | ±20V | - | 127W (Tc) | 90mOhm @ 12.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET_(20V 40V)
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pacote: - |
Estoque3.300 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
OPTIMOS LOWVOLTAGE POWER MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 21A (Ta), 132A (Tc) | 6V, 10V | 3.3V @ 50µA | 49 nC @ 10 V | 3800 pF @ 30 V | ±20V | - | 2.5W (Ta), 100W (Tc) | 3mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-WHTFN-9-1 | 9-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 30V 10A/35A 8TSDSON
|
pacote: - |
Estoque86.457 |
|
MOSFET (Metal Oxide) | 30 V | 10A (Ta), 35A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 13 nC @ 10 V | 970 pF @ 15 V | ±20V | - | 2.1W (Ta), 25W (Tc) | 13mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 700V 10A SOT223
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pacote: - |
Estoque2.232 |
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MOSFET (Metal Oxide) | 700 V | 10A (Tc) | 10V | 3.5V @ 120µA | 13.1 nC @ 10 V | 424 pF @ 400 V | ±16V | - | 7.1W (Tc) | 450mOhm @ 2.3A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 250V 10.9A TDSON-8-5
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pacote: - |
Estoque20.946 |
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MOSFET (Metal Oxide) | 250 V | 10.9A (Tc) | 10V | 4V @ 32µA | 11.4 nC @ 10 V | 920 pF @ 100 V | ±20V | - | 62.5W (Tc) | 165mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 250V 25A TO220-3
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pacote: - |
Estoque1.902 |
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MOSFET (Metal Oxide) | 250 V | 25A (Tc) | 10V | 4V @ 90µA | 29 nC @ 10 V | 2350 pF @ 100 V | ±20V | - | 136W (Tc) | 60mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 900V 5.7A TO220-FP
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 900 V | 5.7A (Tc) | 10V | 3.5V @ 370µA | 34 nC @ 10 V | 850 pF @ 100 V | ±20V | - | 32W (Tc) | 1Ohm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 55V 31A DPAK
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pacote: - |
Estoque5.199 |
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MOSFET (Metal Oxide) | 55 V | 31A (Tc) | - | 4V @ 250µA | 63 nC @ 10 V | 1200 pF @ 25 V | - | - | - | 65mOhm @ 16A, 10V | - | Surface Mount | TO-252AA (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 250V 25A D2PAK
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pacote: - |
Estoque14.874 |
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MOSFET (Metal Oxide) | 250 V | 25A (Tc) | 10V | 4V @ 90µA | 29 nC @ 10 V | 2350 pF @ 100 V | ±20V | - | 136W (Tc) | 60mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
OPTIMOS 6 POWER-TRANSISTOR
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pacote: - |
Estoque15.000 |
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MOSFET (Metal Oxide) | 100 V | 26A (Ta), 273A (Tc) | 6V, 10V | 3.8V @ 159µA | 134 nC @ 10 V | 9500 pF @ 50 V | ±20V | - | 3W (Ta), 333W (Tc) | 2.05mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TTFN-9-U02 | 9-PowerTDFN |
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Infineon Technologies |
CONSUMER PG-TO252-3
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pacote: - |
Estoque1.284 |
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MOSFET (Metal Oxide) | 600 V | 4.7A (Tc) | 10V | 4.5V @ 50µA | 6 nC @ 10 V | 230 pF @ 400 V | ±20V | - | 26W (Tc) | 1Ohm @ 1A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |