Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
DIODE GEN PURP 1.2KV 15A WAFER
|
pacote: Die |
Estoque2.192 |
|
1200V | 15A (DC) | 1.6V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 30A WAFER
|
pacote: Die |
Estoque7.280 |
|
600V | 30A (DC) | 1.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 20A WAFER
|
pacote: Die |
Estoque4.880 |
|
600V | 20A (DC) | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 20A WAFER
|
pacote: Die |
Estoque4.224 |
|
600V | 20A (DC) | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 20A WAFER
|
pacote: Die |
Estoque6.480 |
|
600V | 20A (DC) | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 30A WAFER
|
pacote: Die |
Estoque7.696 |
|
600V | 30A (DC) | 1.95V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 30A WAFER
|
pacote: Die |
Estoque4.608 |
|
600V | 30A (DC) | 1.95V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 10A WAFER
|
pacote: Die |
Estoque6.864 |
|
1200V | 10A (DC) | 1.6V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 7A WAFER
|
pacote: Die |
Estoque7.920 |
|
1200V | 7A (DC) | 2.1V @ 7A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 22.5A WAFER
|
pacote: Die |
Estoque3.568 |
|
600V | 22.5A (DC) | 1.6V @ 22.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 15A WAFER
|
pacote: Die |
Estoque6.208 |
|
600V | 15A (DC) | 1.25V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 250µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 22.5A WAFER
|
pacote: Die |
Estoque7.856 |
|
600V | 22.5A (DC) | 1.6V @ 22.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 15A WAFER
|
pacote: Die |
Estoque6.336 |
|
600V | 15A (DC) | 1.6V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 10A WAFER
|
pacote: Die |
Estoque7.616 |
|
600V | 10A (DC) | 1.25V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 20A WAFER
|
pacote: Die |
Estoque4.688 |
|
600V | 20A (DC) | 1.95V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 20A WAFER
|
pacote: Die |
Estoque4.544 |
|
600V | 20A (DC) | 1.95V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 7.5A WAFER
|
pacote: Die |
Estoque2.384 |
|
1200V | 7.5A (DC) | 1.6V @ 7.5A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 5A WAFER
|
pacote: Die |
Estoque3.280 |
|
1200V | 5A (DC) | 2.1V @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 5A WAFER
|
pacote: Die |
Estoque2.704 |
|
1200V | 5A (DC) | 1.9V @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 15A WAFER
|
pacote: Die |
Estoque7.952 |
|
600V | 15A (DC) | 1.95V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 9A WAFER
|
pacote: Die |
Estoque2.560 |
|
600V | 9A (DC) | 1.6V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 6A WAFER
|
pacote: Die |
Estoque7.856 |
|
600V | 6A (DC) | 1.6V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 10A WAFER
|
pacote: Die |
Estoque5.072 |
|
600V | 10A (DC) | 1.95V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 3A WAFER
|
pacote: Die |
Estoque7.312 |
|
1200V | 3A (DC) | 1.6V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 2A WAFER
|
pacote: Die |
Estoque5.056 |
|
1200V | 2A (DC) | 2.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 3A WAFER
|
pacote: Die |
Estoque4.640 |
|
600V | 3A (DC) | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 6A WAFER
|
pacote: Die |
Estoque4.656 |
|
600V | 6A (DC) | 1.95V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP WAFER
|
pacote: Die |
Estoque3.456 |
|
- | - | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |