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Fairchild/ON Semiconductor |
MOSFET N-CH 800V 6.6A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 3.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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pacote: TO-220-3 |
Estoque5.968 |
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Fairchild/ON Semiconductor |
MOSFET P-CH 400V 3.5A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.13W (Ta), 85W (Tc)
- Rds On (Max) @ Id, Vgs: 3.1 Ohm @ 1.75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque2.688 |
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Fairchild/ON Semiconductor |
MOSFET P-CH 500V 1.5A TO-220
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Rds On (Max) @ Id, Vgs: 10.5 Ohm @ 750mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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pacote: TO-220-3 |
Estoque2.512 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 300A PSOF8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13650pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 429W (Tj)
- Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PSOF
- Package / Case: 8-PowerSFN
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pacote: 8-PowerSFN |
Estoque7.840 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 80V 50A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W (Tj)
- Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252AA)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque7.008 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 22.5A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 11.3A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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pacote: TO-220-3 Full Pack |
Estoque7.812 |
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Fairchild/ON Semiconductor |
TRANS NPN 60V 3A TO-220F
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 2A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 500mA, 4V
- Power - Max: 2W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F
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pacote: TO-220-3 Full Pack |
Estoque3.552 |
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Fairchild/ON Semiconductor |
TRANS NPN 350V 1A TO-220
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 350V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
- Power - Max: 2W
- Frequency - Transition: 10MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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pacote: TO-220-3 |
Estoque5.264 |
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Fairchild/ON Semiconductor |
TRANS NPN DARL 80V 4A TO126
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
- Power - Max: 40W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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pacote: TO-225AA, TO-126-3 |
Estoque4.464 |
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Fairchild/ON Semiconductor |
TRANS PNP 45V 0.8A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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pacote: TO-226-3, TO-92-3 (TO-226AA) |
Estoque4.624 |
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Fairchild/ON Semiconductor |
TRANS PNP 80V 1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
- Power - Max: 1W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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pacote: TO-226-3, TO-92-3 (TO-226AA) |
Estoque6.120.000 |
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Fairchild/ON Semiconductor |
TRANS NPN 60V 2A SSOT-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
- Power - Max: 500mW
- Frequency - Transition: 75MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-SSOT
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pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque472.140 |
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Fairchild/ON Semiconductor |
TRANS PNP 160V 1A TO-92L
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 200mA, 5V
- Power - Max: 900mW
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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pacote: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Estoque5.152 |
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Fairchild/ON Semiconductor |
TRANS PREBIAS NPN 300MW TO92S
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
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pacote: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Estoque3.008 |
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Fairchild/ON Semiconductor |
MOD SPM 500V 1.1A SPM23-HD
- Type: MOSFET
- Configuration: 3 Phase
- Current: 1.1A
- Voltage: 500V
- Voltage - Isolation: 1500Vrms
- Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
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pacote: 23-PowerDIP Module (0.551", 14.00mm) |
Estoque8.916 |
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Fairchild/ON Semiconductor |
DIODE ZENER 22V 500MW DO35
- Voltage - Zener (Nom) (Vz): 22V
- Tolerance: ±5%
- Power - Max: 500mW
- Impedance (Max) (Zzt): 29 Ohms
- Current - Reverse Leakage @ Vr: 100nA @ 17V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
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pacote: DO-204AH, DO-35, Axial |
Estoque4.896 |
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Fairchild/ON Semiconductor |
DIODE ZENER 6.2V 1W DO41
- Voltage - Zener (Nom) (Vz): 6.2V
- Tolerance: ±5%
- Power - Max: 1W
- Impedance (Max) (Zzt): 2 Ohms
- Current - Reverse Leakage @ Vr: 10µA @ 3V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
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pacote: DO-204AL, DO-41, Axial |
Estoque3.760 |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 70V 200MA SOT23-3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 70V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 100nA @ 50V
- Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Operating Temperature - Junction: -55°C ~ 150°C
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pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque25.392 |
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Fairchild/ON Semiconductor |
IC REG LINEAR 9V 1A TO220F-4L
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 35V
- Voltage - Output (Min/Fixed): 9V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.5V @ 1A
- Current - Output: 1A
- Current - Quiescent (Iq): -
- Current - Supply (Max): 10mA
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
- Operating Temperature: -20°C ~ 80°C
- Mounting Type: Through Hole
- Package / Case: TO-220-4 Full Pack
- Supplier Device Package: TO-220F-4L
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pacote: TO-220-4 Full Pack |
Estoque7.632 |
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Fairchild/ON Semiconductor |
IC REG LINEAR 9V 1A TO220-3
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 35V
- Voltage - Output (Min/Fixed): 9V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 2V @ 1A (Typ)
- Current - Output: 1A
- Current - Quiescent (Iq): -
- Current - Supply (Max): 6mA
- PSRR: 58dB (120Hz)
- Control Features: -
- Protection Features: Over Temperature, Short Circuit
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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pacote: TO-220-3 |
Estoque18.972 |
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Fairchild/ON Semiconductor |
IC LATCH OCTAL 3STATE 20-SOIC
- Logic Type: D-Type Transparent Latch
- Circuit: 8:8
- Output Type: Tri-State
- Voltage - Supply: 2 V ~ 6 V
- Independent Circuits: 1
- Delay Time - Propagation: 5.5ns
- Current - Output High, Low: 24mA, 24mA
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 20-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 20-SOIC
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pacote: 20-SOIC (0.295", 7.50mm Width) |
Estoque9.096 |
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Fairchild/ON Semiconductor |
IC D-TYPE POS TRG SNGL 20DIP
- Function: Standard
- Type: D-Type
- Output Type: Non-Inverted
- Number of Elements: 1
- Number of Bits per Element: 8
- Clock Frequency: 130MHz
- Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
- Trigger Type: Positive Edge
- Current - Output High, Low: 1mA, 20mA
- Voltage - Supply: 4.5 V ~ 5.5 V
- Current - Quiescent (Iq): 48mA
- Input Capacitance: -
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 20-DIP (0.300", 7.62mm)
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pacote: 20-DIP (0.300", 7.62mm) |
Estoque17.484 |
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Fairchild/ON Semiconductor |
LED RED CLEAR 3MM ROUND T/H
- Color: Red
- Configuration: -
- Lens Color: Colorless
- Lens Transparency: Clear
- Millicandela Rating: 375mcd
- Lens Style/Size: Round with Domed Top, 3mm (T-1), 2.90mm
- Voltage - Forward (Vf) (Typ): 2.1V
- Current - Test: 20mA
- Viewing Angle: 60°
- Mounting Type: Through Hole
- Wavelength - Dominant: -
- Wavelength - Peak: 645nm
- Features: -
- Package / Case: Radial
- Supplier Device Package: T-1
- Size / Dimension: -
- Height (Max): 6.30mm
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pacote: Radial |
Estoque2.862 |
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Fairchild/ON Semiconductor |
LED YELLOW DIFF 5MM ROUND T/H
- Color: Yellow
- Configuration: -
- Lens Color: Yellow
- Lens Transparency: Diffused
- Millicandela Rating: 4mcd
- Lens Style/Size: Round with Domed Top, 5mm (T-1 3/4), 4.84mm
- Voltage - Forward (Vf) (Typ): 12V
- Current - Test: 13mA
- Viewing Angle: 60°
- Mounting Type: Through Hole
- Wavelength - Dominant: -
- Wavelength - Peak: 585nm
- Features: -
- Package / Case: Radial
- Supplier Device Package: T-1 3/4
- Size / Dimension: -
- Height (Max): 11.56mm
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pacote: Radial |
Estoque5.850 |
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Fairchild/ON Semiconductor |
PHOTOSENSOR BIPOLAR SIDELOOKER
- Wavelength: 880nm
- Type: Photo Detector, Logic Output
- Output Type: Open Collector
- Package / Case: Side View
- Operating Temperature: -40°C ~ 85°C (TA)
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pacote: Side View |
Estoque6.894 |
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Fairchild/ON Semiconductor |
OPTOISO 5.3KV TRANSISTOR 4DIP
- Number of Channels: 1
- Voltage - Isolation: 5300Vrms
- Current Transfer Ratio (Min): 50% @ 1mA
- Current Transfer Ratio (Max): 150% @ 1mA
- Turn On / Turn Off Time (Typ): -
- Rise / Fall Time (Typ): 2.4µs, 2.4µs
- Input Type: AC, DC
- Output Type: Transistor
- Voltage - Output (Max): 70V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.2V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 200mV
- Operating Temperature: -55°C ~ 100°C
- Mounting Type: Through Hole
- Package / Case: 4-DIP (0.300", 7.62mm)
- Supplier Device Package: 4-DIP
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pacote: 4-DIP (0.300", 7.62mm) |
Estoque3.436 |
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Fairchild/ON Semiconductor |
OPTOISO 7.5KV TRANS W/BASE 6DIP
- Number of Channels: 1
- Voltage - Isolation: 7500Vpk
- Current Transfer Ratio (Min): 20% @ 10mA
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): 2µs, 2µs
- Rise / Fall Time (Typ): -
- Input Type: DC
- Output Type: Transistor with Base
- Voltage - Output (Max): 30V
- Current - Output / Channel: -
- Voltage - Forward (Vf) (Typ): 1.18V
- Current - DC Forward (If) (Max): 60mA
- Vce Saturation (Max): 500mV
- Operating Temperature: -40°C ~ 100°C
- Mounting Type: Through Hole
- Package / Case: 6-DIP (0.400", 10.16mm)
- Supplier Device Package: 6-DIP
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pacote: 6-DIP (0.400", 10.16mm) |
Estoque60.000 |
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Fairchild/ON Semiconductor |
OPTOISO 4.17KV TRANS W/BASE 6SMD
- Number of Channels: 1
- Voltage - Isolation: 4170Vrms
- Current Transfer Ratio (Min): 100% @ 10mA
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): 2µs, 2µs
- Rise / Fall Time (Typ): -
- Input Type: DC
- Output Type: Transistor with Base
- Voltage - Output (Max): 30V
- Current - Output / Channel: -
- Voltage - Forward (Vf) (Typ): 1.18V
- Current - DC Forward (If) (Max): 60mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -40°C ~ 100°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Gull Wing
- Supplier Device Package: 6-SMD
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pacote: 6-SMD, Gull Wing |
Estoque162.180 |
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