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Fairchild/ON Semiconductor Produtos - Transistores - FET, MOSFET - Simples

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Página  67/110
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot FQPF7N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 4.8A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 690 mOhm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque6.144
MOSFET (Metal Oxide)
200V
4.8A (Tc)
10V
5V @ 250µA
10nC @ 10V
400pF @ 25V
±30V
-
37W (Tc)
690 mOhm @ 2.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
IRLU110ATU
Fairchild/ON Semiconductor

MOSFET N-CH 100V 4.7A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 22W (Tc)
  • Rds On (Max) @ Id, Vgs: 440 mOhm @ 2.35A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque4.080
MOSFET (Metal Oxide)
100V
4.7A (Tc)
5V
2V @ 250µA
8nC @ 5V
235pF @ 25V
±20V
-
2.5W (Ta), 22W (Tc)
440 mOhm @ 2.35A, 5V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
FQPF9N08L
Fairchild/ON Semiconductor

MOSFET N-CH 80V 7A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 23W (Tc)
  • Rds On (Max) @ Id, Vgs: 210 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque2.752
MOSFET (Metal Oxide)
80V
7A (Tc)
5V, 10V
2V @ 250µA
6.1nC @ 5V
280pF @ 25V
±20V
-
23W (Tc)
210 mOhm @ 3.5A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot IRLR110ATF
Fairchild/ON Semiconductor

MOSFET N-CH 100V 4.7A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 22W (Tc)
  • Rds On (Max) @ Id, Vgs: 440 mOhm @ 2.35A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque28.980
MOSFET (Metal Oxide)
100V
4.7A (Tc)
5V
2V @ 250µA
8nC @ 5V
235pF @ 25V
±20V
-
2.5W (Ta), 22W (Tc)
440 mOhm @ 2.35A, 5V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FQP6N15
Fairchild/ON Semiconductor

MOSFET N-CH 150V 6.4A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.2A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque140.664
MOSFET (Metal Oxide)
150V
6.4A (Tc)
10V
4V @ 250µA
8.5nC @ 10V
270pF @ 25V
±25V
-
63W (Tc)
600 mOhm @ 3.2A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FQD5N15TF
Fairchild/ON Semiconductor

MOSFET N-CH 150V 4.3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque52.812
MOSFET (Metal Oxide)
150V
4.3A (Tc)
10V
4V @ 250µA
7nC @ 10V
230pF @ 25V
±25V
-
2.5W (Ta), 30W (Tc)
800 mOhm @ 2.15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FQP2N40
Fairchild/ON Semiconductor

MOSFET N-CH 400V 1.8A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 Ohm @ 900mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque103.464
MOSFET (Metal Oxide)
400V
1.8A (Tc)
10V
5V @ 250µA
5.5nC @ 10V
150pF @ 25V
±30V
-
40W (Tc)
5.8 Ohm @ 900mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
FQP1N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 1.4A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 Ohm @ 700mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque7.168
MOSFET (Metal Oxide)
500V
1.4A (Tc)
10V
5V @ 250µA
5.5nC @ 10V
150pF @ 25V
±30V
-
40W (Tc)
9 Ohm @ 700mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
IRLR210ATM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 2.7A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 21W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.35A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque3.744
MOSFET (Metal Oxide)
200V
2.7A (Tc)
5V
2V @ 250µA
9nC @ 5V
240pF @ 25V
±20V
-
2.5W (Ta), 21W (Tc)
1.5 Ohm @ 1.35A, 5V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
FQU1N50TU
Fairchild/ON Semiconductor

MOSFET N-CH 500V 1.1A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 Ohm @ 550mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque4.880
MOSFET (Metal Oxide)
500V
1.1A (Tc)
10V
5V @ 250µA
5.5nC @ 10V
150pF @ 25V
±30V
-
2.5W (Ta), 25W (Tc)
9 Ohm @ 550mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
FQU3P20TU
Fairchild/ON Semiconductor

MOSFET P-CH 200V 2.4A IPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque4.048
MOSFET (Metal Oxide)
200V
2.4A (Tc)
10V
5V @ 250µA
8nC @ 10V
250pF @ 25V
±30V
-
2.5W (Ta), 37W (Tc)
2.7 Ohm @ 1.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot FQP2P25
Fairchild/ON Semiconductor

MOSFET P-CH 250V 2.3A TO-220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 1.15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque163.200
MOSFET (Metal Oxide)
250V
2.3A (Tc)
10V
5V @ 250µA
8.5nC @ 10V
250pF @ 25V
±30V
-
52W (Tc)
4 Ohm @ 1.15A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FQP2N30
Fairchild/ON Semiconductor

MOSFET N-CH 300V 2.1A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 1.05A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque103.464
MOSFET (Metal Oxide)
300V
2.1A (Tc)
10V
5V @ 250µA
5nC @ 10V
130pF @ 25V
±30V
-
40W (Tc)
3.7 Ohm @ 1.05A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
FQPF6N15
Fairchild/ON Semiconductor

MOSFET N-CH 150V 5A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque3.840
MOSFET (Metal Oxide)
150V
5A (Tc)
10V
4V @ 250µA
8.5nC @ 10V
270pF @ 25V
±25V
-
38W (Tc)
600 mOhm @ 2.5A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot FQD2N40TM
Fairchild/ON Semiconductor

MOSFET N-CH 400V 1.4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 Ohm @ 700mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque42.000
MOSFET (Metal Oxide)
400V
1.4A (Tc)
10V
5V @ 250µA
5.5nC @ 10V
150pF @ 25V
±30V
-
2.5W (Ta), 25W (Tc)
5.8 Ohm @ 700mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
FQD2N40TF
Fairchild/ON Semiconductor

MOSFET N-CH 400V 1.4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 Ohm @ 700mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque4.144
MOSFET (Metal Oxide)
400V
1.4A (Tc)
10V
5V @ 250µA
5.5nC @ 10V
150pF @ 25V
±30V
-
2.5W (Ta), 25W (Tc)
5.8 Ohm @ 700mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
FQD4N20LTF
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.2A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 1.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque4.432
MOSFET (Metal Oxide)
200V
3.2A (Tc)
5V, 10V
2V @ 250µA
5.2nC @ 5V
310pF @ 25V
±20V
-
2.5W (Ta), 30W (Tc)
1.35 Ohm @ 1.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
FQD4N20LTM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.2A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 1.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque4.464
MOSFET (Metal Oxide)
200V
3.2A (Tc)
5V, 10V
2V @ 250µA
5.2nC @ 5V
310pF @ 25V
±20V
-
2.5W (Ta), 30W (Tc)
1.35 Ohm @ 1.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FQP4N25
Fairchild/ON Semiconductor

MOSFET N-CH 250V 3.6A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque31.800
MOSFET (Metal Oxide)
250V
3.6A (Tc)
10V
5V @ 250µA
5.6nC @ 10V
200pF @ 25V
±30V
-
52W (Tc)
1.75 Ohm @ 1.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FQP5N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 4.5A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque124.464
MOSFET (Metal Oxide)
200V
4.5A (Tc)
10V
5V @ 250µA
7.5nC @ 10V
270pF @ 25V
±30V
-
52W (Tc)
1.2 Ohm @ 2.25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
FQPF4N20L
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 27W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque3.568
MOSFET (Metal Oxide)
200V
3A (Tc)
5V, 10V
2V @ 250µA
5.2nC @ 5V
310pF @ 25V
±20V
-
27W (Tc)
1.35 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
FQPF4N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 2.8A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 27W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque4.944
MOSFET (Metal Oxide)
200V
2.8A (Tc)
10V
5V @ 250µA
6.5nC @ 10V
220pF @ 25V
±30V
-
27W (Tc)
1.4 Ohm @ 1.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
FQU7P06TU
Fairchild/ON Semiconductor

MOSFET P-CH 60V 5.4A IPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 451 mOhm @ 2.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque7.344
MOSFET (Metal Oxide)
60V
5.4A (Tc)
10V
4V @ 250µA
8.2nC @ 10V
295pF @ 25V
±25V
-
2.5W (Ta), 28W (Tc)
451 mOhm @ 2.7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
FQU4N25TU
Fairchild/ON Semiconductor

MOSFET N-CH 250V 3A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque2.976
MOSFET (Metal Oxide)
250V
3A (Tc)
10V
5V @ 250µA
5.6nC @ 10V
200pF @ 25V
±30V
-
2.5W (Ta), 37W (Tc)
1.75 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot FQD4N25TM
Fairchild/ON Semiconductor

MOSFET N-CH 250V 3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque545.280
MOSFET (Metal Oxide)
250V
3A (Tc)
10V
5V @ 250µA
5.6nC @ 10V
200pF @ 25V
±30V
-
2.5W (Ta), 37W (Tc)
1.75 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FQP5N20L
Fairchild/ON Semiconductor

MOSFET N-CH 200V 4.5A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque162.804
MOSFET (Metal Oxide)
200V
4.5A (Tc)
5V, 10V
2V @ 250µA
6.2nC @ 5V
325pF @ 25V
±20V
-
52W (Tc)
1.2 Ohm @ 2.25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FQP7N10L
Fairchild/ON Semiconductor

MOSFET N-CH 100V 7.3A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 3.65A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque103.464
MOSFET (Metal Oxide)
100V
7.3A (Tc)
5V, 10V
2V @ 250µA
6nC @ 5V
290pF @ 25V
±20V
-
40W (Tc)
350 mOhm @ 3.65A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FQP7N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 7.3A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 3.65A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque104.064
MOSFET (Metal Oxide)
100V
7.3A (Tc)
10V
4V @ 250µA
7.5nC @ 10V
250pF @ 25V
±25V
-
40W (Tc)
350 mOhm @ 3.65A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3