Página 41 - Fairchild/ON Semiconductor Produtos - Transistores - FET, MOSFET - Simples | Heisener Electronics
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Fairchild/ON Semiconductor Produtos - Transistores - FET, MOSFET - Simples

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Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot FDPF20N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 20A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 59.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 38.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque12.540
MOSFET (Metal Oxide)
500V
20A (Tc)
10V
5V @ 250µA
59.5nC @ 10V
3120pF @ 25V
±30V
-
38.5W (Tc)
230 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot FDP090N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 75A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8225pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque140.520
MOSFET (Metal Oxide)
100V
75A (Tc)
10V
4.5V @ 250µA
116nC @ 10V
8225pF @ 25V
±20V
-
208W (Tc)
9 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
FQPF8N80CYDTU
Fairchild/ON Semiconductor

MOSFET N-CH 800V 8A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 59W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.55 Ohm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3 (Y-Forming)
  • Package / Case: TO-220-3 Full Pack, Formed Leads
pacote: TO-220-3 Full Pack, Formed Leads
Estoque7.552
MOSFET (Metal Oxide)
800V
8A (Tc)
10V
5V @ 250µA
45nC @ 10V
2050pF @ 25V
±30V
-
59W (Tc)
1.55 Ohm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F-3 (Y-Forming)
TO-220-3 Full Pack, Formed Leads
hot FDP3672
Fairchild/ON Semiconductor

MOSFET N-CH 105V 41A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 105V
  • Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 135W (Tc)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 41A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque104.304
MOSFET (Metal Oxide)
105V
5.9A (Ta), 41A (Tc)
6V, 10V
4V @ 250µA
37nC @ 10V
1670pF @ 25V
±20V
-
135W (Tc)
33 mOhm @ 41A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
FQI13N50CTU
Fairchild/ON Semiconductor

MOSFET N-CH 500V 13A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 195W (Tc)
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA
Estoque20.628
MOSFET (Metal Oxide)
500V
13A (Tc)
10V
4V @ 250µA
56nC @ 10V
2055pF @ 25V
±30V
-
195W (Tc)
480 mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
hot FQP14N30
Fairchild/ON Semiconductor

MOSFET N-CH 300V 14.4A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 14.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 147W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque5.360
MOSFET (Metal Oxide)
300V
14.4A (Tc)
10V
5V @ 250µA
40nC @ 10V
1360pF @ 25V
±30V
-
147W (Tc)
290 mOhm @ 7.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FDPF55N06
Fairchild/ON Semiconductor

MOSFET N-CH 60V 55A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 27.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque5.440
MOSFET (Metal Oxide)
60V
55A (Tc)
10V
4V @ 250µA
37nC @ 10V
1510pF @ 25V
±25V
-
48W (Tc)
22 mOhm @ 27.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot FQP6N40CF
Fairchild/ON Semiconductor

MOSFET N-CH 400V 6A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 73W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque200.280
MOSFET (Metal Oxide)
400V
6A (Tc)
10V
4V @ 250µA
20nC @ 10V
625pF @ 25V
±30V
-
73W (Tc)
1.1 Ohm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FQPF11N40C
Fairchild/ON Semiconductor

MOSFET N-CH 400V 10.5A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 44W (Tc)
  • Rds On (Max) @ Id, Vgs: 530 mOhm @ 5.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque8.316
MOSFET (Metal Oxide)
400V
10.5A (Tc)
10V
4V @ 250µA
35nC @ 10V
1090pF @ 25V
±30V
-
44W (Tc)
530 mOhm @ 5.25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot HUF75639S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 100V 56A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque441.780
MOSFET (Metal Oxide)
100V
56A (Tc)
10V
4V @ 250µA
130nC @ 20V
2000pF @ 25V
±20V
-
200W (Tc)
25 mOhm @ 56A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FQPF16N15
Fairchild/ON Semiconductor

MOSFET N-CH 150V 11.6A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 53W (Tc)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 5.8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque58.812
MOSFET (Metal Oxide)
150V
11.6A (Tc)
10V
4V @ 250µA
30nC @ 10V
910pF @ 25V
±25V
-
53W (Tc)
160 mOhm @ 5.8A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot FQP13N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 12.5A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 430 mOhm @ 6.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque30.288
MOSFET (Metal Oxide)
500V
12.5A (Tc)
10V
5V @ 250µA
60nC @ 10V
2300pF @ 25V
±30V
-
170W (Tc)
430 mOhm @ 6.25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot HUF75345P3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 275nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 325W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque25.224
MOSFET (Metal Oxide)
55V
75A (Tc)
10V
4V @ 250µA
275nC @ 20V
4000pF @ 25V
±20V
-
325W (Tc)
7 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot FCPF400N80Z
Fairchild/ON Semiconductor

MOSFET N-CH 800V 11A ZNR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque4.400
MOSFET (Metal Oxide)
800V
11A (Tc)
10V
4.5V @ 1.1mA
56nC @ 10V
2350pF @ 100V
±20V
-
35.7W (Tc)
400 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F-3
TO-220-3 Full Pack
hot HUF75545P3
Fairchild/ON Semiconductor

MOSFET N-CH 80V 75A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 270W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque15.384
MOSFET (Metal Oxide)
80V
75A (Tc)
10V
4V @ 250µA
235nC @ 20V
3750pF @ 25V
±20V
-
270W (Tc)
10 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
FDP15N40
Fairchild/ON Semiconductor

MOSFET N-CH 400V 15A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque10.056
MOSFET (Metal Oxide)
400V
15A (Tc)
10V
5V @ 250µA
36nC @ 10V
1750pF @ 25V
±30V
-
170W (Tc)
300 mOhm @ 7.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FQA11N90C_F109
Fairchild/ON Semiconductor

MOSFET N-CH 900V 11A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
pacote: TO-3P-3, SC-65-3
Estoque390.000
MOSFET (Metal Oxide)
900V
11A (Tc)
10V
5V @ 250µA
80nC @ 10V
3290pF @ 25V
±30V
-
300W (Tc)
1.1 Ohm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
FQPF85N06
Fairchild/ON Semiconductor

MOSFET N-CH 60V 53A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4120pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 62W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 26.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque6.468
MOSFET (Metal Oxide)
60V
53A (Tc)
10V
4V @ 250µA
112nC @ 10V
4120pF @ 25V
±25V
-
62W (Tc)
10 mOhm @ 26.5A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot FQA40N25
Fairchild/ON Semiconductor

MOSFET N-CH 250V 40A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 280W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
pacote: TO-3P-3, SC-65-3
Estoque5.376
MOSFET (Metal Oxide)
250V
40A (Tc)
10V
5V @ 250µA
110nC @ 10V
4000pF @ 25V
±30V
-
280W (Tc)
70 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
hot FQP85N06
Fairchild/ON Semiconductor

MOSFET N-CH 60V 85A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4120pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 42.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque142.200
MOSFET (Metal Oxide)
60V
85A (Tc)
10V
4V @ 250µA
112nC @ 10V
4120pF @ 25V
±25V
-
160W (Tc)
10 mOhm @ 42.5A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
HUF75542P3
Fairchild/ON Semiconductor

MOSFET N-CH 80V 75A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2750pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque18.768
MOSFET (Metal Oxide)
80V
75A (Tc)
10V
4V @ 250µA
180nC @ 20V
2750pF @ 25V
±20V
-
230W (Tc)
14 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot FQA27N25
Fairchild/ON Semiconductor

MOSFET N-CH 250V 27A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 210W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 13.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
pacote: TO-3P-3, SC-65-3
Estoque115.692
MOSFET (Metal Oxide)
250V
27A (Tc)
10V
5V @ 250µA
65nC @ 10V
2450pF @ 25V
±30V
-
210W (Tc)
110 mOhm @ 13.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
FQPF32N20C
Fairchild/ON Semiconductor

MOSFET N-CH 200V 28A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 82 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque7.776
MOSFET (Metal Oxide)
200V
28A (Tc)
10V
4V @ 250µA
110nC @ 10V
2220pF @ 25V
±30V
-
50W (Tc)
82 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot HUF75344P3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 285W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque50.520
MOSFET (Metal Oxide)
55V
75A (Tc)
10V
4V @ 250µA
210nC @ 20V
3200pF @ 25V
±20V
-
285W (Tc)
8 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot FDP5800
Fairchild/ON Semiconductor

MOSFET N-CH 60V 14A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9160pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 242W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque104.280
MOSFET (Metal Oxide)
60V
14A (Ta), 80A (Tc)
4.5V, 10V
2.5V @ 250µA
145nC @ 10V
9160pF @ 15V
±20V
-
242W (Tc)
6 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FQP70N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 57A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 28.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque310.224
MOSFET (Metal Oxide)
100V
57A (Tc)
10V
4V @ 250µA
110nC @ 10V
3300pF @ 25V
±25V
-
160W (Tc)
23 mOhm @ 28.5A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FQP65N06
Fairchild/ON Semiconductor

MOSFET N-CH 60V 65A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 32.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque587.688
MOSFET (Metal Oxide)
60V
65A (Tc)
10V
4V @ 250µA
65nC @ 10V
2410pF @ 25V
±25V
-
150W (Tc)
16 mOhm @ 32.5A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot HUF75639P3
Fairchild/ON Semiconductor

MOSFET N-CH 100V 56A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque156.684
MOSFET (Metal Oxide)
100V
56A (Tc)
10V
4V @ 250µA
130nC @ 20V
2000pF @ 25V
±20V
-
200W (Tc)
25 mOhm @ 56A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3