Diodes Incorporated Produtos

ZVP4424ASTOB

Diodes Incorporated

MOSFET P-CH 240V 0.2A TO92-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 240V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
• Vgs (Max): ±40V
• FET Feature: -
• Power Dissipation (Max): 750mW (Ta)
• Rds On (Max) @ Id, Vgs: 9 Ohm @ 200mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: E-Line (TO-92 compatible)
• Package / Case: E-Line-3

pacote: E-Line-3

ZXMP10A17GQTC

Diodes Incorporated

MOSFET PCH 100V 1.7A SOT223

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 450 mOhm @ 1.2A, 6V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

pacote: TO-261-4, TO-261AA

DMP2035UFDF-7

Diodes Incorporated

MOSFET BVDSS: 8V 24V U-DFN2020-6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1808pF @ 15V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 2.03W (Ta)
• Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: U-DFN2020-6 (Type F)
• Package / Case: 6-UDFN Exposed Pad

pacote: 6-UDFN Exposed Pad

ZVN4306A

Diodes Incorporated

MOSFET N-CH 60V 1.1A TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 850mW (Ta)
• Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92-3
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)

pacote: TO-226-3, TO-92-3 (TO-226AA)

DMP6050SSD-13

Diodes Incorporated

MOSFET 2P-CH 60V 4.8A 8-SO

• FET Type: 2 P-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4.8A
• Rds On (Max) @ Id, Vgs: 55 mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V
• Power - Max: 1.2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

DMG9933USD-13

Diodes Incorporated

MOSFET 2P-CH 20V 4.6A 8SO

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.6A
• Rds On (Max) @ Id, Vgs: 75 mOhm @ 4.8A, 4.5V
• Vgs(th) (Max) @ Id: 1.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
• Power - Max: 1.15W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

ZTX453STOA

Diodes Incorporated

TRANS NPN 100V 1A E-LINE

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 100V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
• Power - Max: 1W
• Frequency - Transition: 150MHz
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: E-Line-3, Formed Leads
• Supplier Device Package: E-Line (TO-92 compatible)

pacote: E-Line-3, Formed Leads

ZX5T949GTA

Diodes Incorporated

TRANS PNP 30V 5.5A SOT-223

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 5.5A
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 210mV @ 500mA, 5.5A
• Current - Collector Cutoff (Max): 20nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
• Power - Max: 3W
• Frequency - Transition: 110MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

pacote: TO-261-4, TO-261AA

2DA1213Y-13

Diodes Incorporated

TRANS PNP 50V 2A SOT89-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
• Power - Max: 1W
• Frequency - Transition: 160MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

pacote: TO-243AA

DSS5240T-7

Diodes Incorporated

TRANS PNP 40V 2A SOT-23

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V
• Power - Max: 600mW
• Frequency - Transition: 100MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

pacote: TO-236-3, SC-59, SOT-23-3

IMX8-7

Diodes Incorporated

TRANS 2NPN 120V 0.05A SOT26

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
• Power - Max: 300mW
• Frequency - Transition: 140MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-26

pacote: SOT-23-6

BAS116T-7

Diodes Incorporated

DIODE GEN PURP 85V 215MA SOT523

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 85V
• Current - Average Rectified (Io): 215mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 5nA @ 75V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: SOT-523
• Operating Temperature - Junction: -65°C ~ 150°C

pacote: SOT-523

BAT54W-7-F

Diodes Incorporated

DIODE SCHOTTKY 30V 200MA SOT323

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323
• Operating Temperature - Junction: -65°C ~ 125°C

pacote: SC-70, SOT-323

SBR10U40CT

Diodes Incorporated

DIODE ARRAY SBR 40V 5A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 440mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

pacote: TO-220-3

AP7361-33D-13

Diodes Incorporated

IC REG LINEAR 3.3V 1A TO252

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.7V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 90µA
• PSRR: 65dB ~ 45dB (1kHz ~ 10kHz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252

pacote: TO-252-3, DPak (2 Leads + Tab), SC-63

AP3031MTR-G1

Diodes Incorporated

IC LED DRIVER RGLTR DIM

• Type: DC DC Regulator
• Topology: Step-Up (Boost)
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 2.7V
• Voltage - Supply (Max): 16V
• Voltage - Output: -
• Current - Output / Channel: 1.4A (Switch)
• Frequency: 1MHz
• Dimming: PWM
• Applications: Backlight
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacote: 8-SOIC (0.154", 3.90mm Width)

AL3050FDC-7

Diodes Incorporated

IC LED DRVR REG PWM U-DFN2020-6

• Type: DC DC Regulator
• Topology: Step-Up (Boost)
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 2.7V
• Voltage - Supply (Max): 5.5V
• Voltage - Output: 30V
• Current - Output / Channel: 40mA
• Frequency: 750kHz
• Dimming: PWM
• Applications: Backlight
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-UDFN Exposed Pad
• Supplier Device Package: U-DFN2020-6 (Type S)

pacote: 6-UDFN Exposed Pad

AP9214L-AC-HSB-7

Diodes Incorporated

IC BATT PROT LI-ION U-DFN2535

• Function: Battery Protection
• Battery Chemistry: Lithium-Ion/Polymer
• Number of Cells: 1
• Fault Protection: Over Current, Over Voltage, Short Circuit
• Interface: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 6-UDFN Exposed Pad
• Supplier Device Package: U-DFN2535-6

pacote: 6-UDFN Exposed Pad

74LVC1G86W5-7

Diodes Incorporated

IC GATE XOR 1CH 2-INP SOT-25

• Logic Type: XOR (Exclusive OR)
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 200µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: 0.7 V ~ 0.8 V
• Logic Level - High: 1.7 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-25
• Package / Case: SC-74A, SOT-753

pacote: SC-74A, SOT-753

PI5V330QEX

Diodes Incorporated

IC 2:1 MUX/DEMUX QSOP

• Applications: Video
• Multiplexer/Demultiplexer Circuit: 2:1
• Switch Circuit: -
• Number of Channels: 4
• On-State Resistance (Max): 10 Ohm
• Voltage - Supply, Single (V+): 5V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 400MHz
• Features: Bi-Directional, RGB
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SSOP (0.154", 3.90mm Width)
• Supplier Device Package: 16-QSOP

pacote: 16-SSOP (0.154", 3.90mm Width)

PI6C4931504-04LIE

Diodes Incorporated

IC CLOCK BUFFER MUX 2:4 20TSSOP

• Type: Fanout Buffer (Distribution), Multiplexer
• Number of Circuits: 1
• Ratio - Input:Output: 2:4
• Differential - Input:Output: Yes/Yes
• Input: LVCMOS, LVTTL
• Output: HCSL
• Frequency - Max: 250MHz
• Voltage - Supply: 2.375 V ~ 3.63 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

pacote: 20-TSSOP (0.173", 4.40mm Width)

PI6C557-05QLE

Diodes Incorporated

IC CLOCK GENERATOR TSSOP

• PLL: Yes
• Main Purpose: Ethernet, PCI Express (PCIe)
• Input: HCSL, Crystal
• Output: HCSL, LVDS
• Number of Circuits: 1
• Ratio - Input:Output: 1:4
• Differential - Input:Output: No/Yes
• Frequency - Max: 200MHz
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

pacote: 20-TSSOP (0.173", 4.40mm Width)

BZT52C5V1Q-7-F

Diodes Incorporated

ZENER DIODE SOD123 T&R 3K

• Voltage - Zener (Nom) (Vz): 5.1 V
• Tolerance: ±5.88%
• Power - Max: 370 mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 2 µA @ 2 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

pacote: -

AP7375Q-50Y-13

Diodes Incorporated

LDO CMOS LOWCURR SOT89 T&R 2.5K

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 45V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.4V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 8 µA
• Current - Supply (Max): -
• PSRR: 85dB (1kHz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

pacote: -

BZT52C9V1TQ-7-F

Diodes Incorporated

DIODE ZENER 9.1V SOD523 T&R 3K

• Voltage - Zener (Nom) (Vz): 9.1 V
• Tolerance: ±6.04%
• Power - Max: 300 mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 6 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523

pacote: -

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UABF1510-13

Diodes Incorporated

BRIDGE RECT 1P 1KV 1.5A 4SOPA

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 1.5 A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: 4-SOPA

pacote: -

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BZX84C4V7-13-F-79

Diodes Incorporated

DIODE ZENER

• Voltage - Zener (Nom) (Vz): -
• Tolerance: -
• Power - Max: -
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacote: -

Request a Quote

DMTH6010LPSW-13

Diodes Incorporated

MOSFET N-CH 60V 15.5A/80A PWRDI

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.9W (Ta), 75W (Tc)
• Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI5060-8 (Type Q)
• Package / Case: 8-PowerTDFN

pacote: -

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