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Alpha & Omega Semiconductor Inc. Produtos

Registros 2.091
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AOK20B120E1
Alpha & Omega Semiconductor Inc.

IGBT 1200V 20A TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 333W
  • Switching Energy: 830µJ (off)
  • Input Type: Standard
  • Gate Charge: 60.5nC
  • Td (on/off) @ 25°C: -/134ns
  • Test Condition: 600V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
pacote: TO-247-3
Estoque6.864
AOK20B135D1
Alpha & Omega Semiconductor Inc.

IGBT 1350V 20A 340W TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1350V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
  • Power - Max: 340W
  • Switching Energy: 1.05mJ (off)
  • Input Type: Standard
  • Gate Charge: 66nC
  • Td (on/off) @ 25°C: -/156ns
  • Test Condition: 600V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
pacote: TO-247-3
Estoque7.356
AON7200_101
Alpha & Omega Semiconductor Inc.

MOSFET N-CH DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN-EP (3x3)
  • Package / Case: 8-VDFN Exposed Pad
pacote: 8-VDFN Exposed Pad
Estoque2.464
AOB266L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 18A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 268W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque7.424
AOTF13N50
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 13A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1633pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 510 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3F
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque4.880
hot AOTF7T60P
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 7A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 965pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3F
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque17.364
hot AON6435
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 12A 8DFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 4.1W (Ta), 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
pacote: 8-PowerSMD, Flat Leads
Estoque8.076
AON7262E
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 34A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 34A
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN-EP (3x3)
  • Package / Case: 8-PowerVDFN
pacote: 8-PowerVDFN
Estoque3.584
hot AO4494
Alpha & Omega Semiconductor Inc.

MOSFET N CH 30V 18A 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque4.720
AOK27S60L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 27A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1294pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 13.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque6.192
AOT11S60L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 11A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 178W (Tc)
  • Rds On (Max) @ Id, Vgs: 399 mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque28.050
AON7524
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 28A 8-DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (3x3)
  • Package / Case: 8-PowerSMD, Flat Leads
pacote: 8-PowerSMD, Flat Leads
Estoque46.986
AO9926BL_101
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque7.952
AON6906A
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 9.1A/10A 8DFN

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.1A, 10A
  • Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 9.1A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 15V
  • Power - Max: 1.9W, 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-DFN (5x6)
pacote: 8-PowerVDFN
Estoque5.424
hot AO6804A
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 5A 6TSOP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 10V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
pacote: SC-74, SOT-457
Estoque629.016
hot AO4614B
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 40V 6A/5A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 5A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque372.840
AOZ9252DI
Alpha & Omega Semiconductor Inc.

IC BATT PROTECTION LI-ION 6DFN

  • Function: Battery Protection
  • Battery Chemistry: Lithium-Ion/Polymer
  • Number of Cells: 1
  • Fault Protection: Over Current
  • Interface: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 6-WFDFN Exposed Pad
  • Supplier Device Package: 6-DFN-EP (2x4)
pacote: 6-WFDFN Exposed Pad
Estoque7.312
hot AOZ8914CI
Alpha & Omega Semiconductor Inc.

TVS DIODE

  • Type: -
  • Unidirectional Channels: -
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): -
  • Voltage - Breakdown (Min): -
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: -
  • Applications: -
  • Capacitance @ Frequency: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque69.000
AOZ2264QI-15
Alpha & Omega Semiconductor Inc.

IC REG BUCK SYNC 15A 24V COT

  • Function: -
  • Output Configuration: -
  • Topology: -
  • Output Type: -
  • Number of Outputs: -
  • Voltage - Input (Min): -
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Current - Output: -
  • Frequency - Switching: -
  • Synchronous Rectifier: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque3.104
AOZ1043PI-01
Alpha & Omega Semiconductor Inc.

IC REG BUCK SYNC 8SOIC

  • Function: -
  • Output Configuration: -
  • Topology: -
  • Output Type: -
  • Number of Outputs: -
  • Voltage - Input (Min): -
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Current - Output: -
  • Frequency - Switching: -
  • Synchronous Rectifier: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque7.696
AOD380A60C
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 11A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque15.471
AOZ5316NQI
Alpha & Omega Semiconductor Inc.

25V/55A DRMOS 3.3V/5V PWM IN QFN

  • Output Configuration: Half Bridge
  • Applications: Synchronous Buck Converters
  • Interface: PWM
  • Load Type: Inductive, Capacitive
  • Technology: DrMOS
  • Rds On (Typ): -
  • Current - Output / Channel: 55A
  • Current - Peak Output: 120A
  • Voltage - Supply: 4.5V ~ 5.5V
  • Voltage - Load: 2.5V ~ 25V
  • Operating Temperature: -40°C ~ 150°C (TA)
  • Features: Bootstrap Circuit, Diode Emulation, Status Flag
  • Fault Protection: Over Temperature, Shoot-Through, UVLO
  • Mounting Type: Surface Mount
  • Package / Case: 31-PowerVFQFN Module
  • Supplier Device Package: 31-QFN (5x5)
pacote: -
Request a Quote
AONS36326
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 5X6 DFN

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
AOB2502L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 150V 106A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 277W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacote: -
Request a Quote
AOD380A60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 11A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Request a Quote
AOZ1334ADI-01
Alpha & Omega Semiconductor Inc.

5.5V/10A SINGLE CHANNEL SMART LO

  • Switch Type: -
  • Number of Outputs: -
  • Ratio - Input:Output: -
  • Output Configuration: -
  • Output Type: -
  • Interface: -
  • Voltage - Load: -
  • Voltage - Supply (Vcc/Vdd): -
  • Current - Output (Max): -
  • Rds On (Typ): -
  • Input Type: -
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque15.111
AOK40B120P1
Alpha & Omega Semiconductor Inc.

IGBT 40A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 600 W
  • Switching Energy: 2.5mJ (on), 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 202 nC
  • Td (on/off) @ 25°C: 53ns/210ns
  • Test Condition: 600V, 40A, 7.5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
pacote: -
Request a Quote
AOZ5118QI-01
Alpha & Omega Semiconductor Inc.

25V/65A DRMOS SMOD EN CONTROL QF

  • Output Configuration: Half Bridge
  • Applications: Synchronous Buck Converters
  • Interface: PWM
  • Load Type: Inductive, Capacitive
  • Technology: DrMOS
  • Rds On (Typ): -
  • Current - Output / Channel: 65A
  • Current - Peak Output: 120A
  • Voltage - Supply: 4.5V ~ 5.5V
  • Voltage - Load: 4.5V ~ 25V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Features: Bootstrap Circuit, Diode Emulation
  • Fault Protection: Over Temperature, Shoot-Through, UVLO
  • Mounting Type: Surface Mount
  • Package / Case: 31-PowerVFQFN Module
  • Supplier Device Package: 31-QFN (5x5)
pacote: -
Estoque8.970