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Alpha & Omega Semiconductor Inc. |
IGBT 650V 10A TO220
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 20A
- Current - Collector Pulsed (Icm): 30A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
- Power - Max: 150W
- Switching Energy: 180µJ (on), 130µJ (off)
- Input Type: Standard
- Gate Charge: 24nC
- Td (on/off) @ 25°C: 12ns/91ns
- Test Condition: 400V, 10A, 30 Ohm, 15V
- Reverse Recovery Time (trr): 262ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
|
pacote: TO-220-3 |
Estoque23.172 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 80V TO-252
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque5.024 |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH TO252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 90W (Tc)
- Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 20A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque6.640 |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 8SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 6V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 11A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque15.276 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque2.864 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 17A TO251A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1229pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251A
- Package / Case: TO-251-3 Stub Leads, IPak
|
pacote: TO-251-3 Stub Leads, IPak |
Estoque3.168 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 70A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
pacote: TO-220-3 |
Estoque62.088 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 500V 22A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3710pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 417W (Tc)
- Rds On (Max) @ Id, Vgs: 260 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
|
pacote: TO-247-3 |
Estoque4.416 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 11A TO262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 178W (Tc)
- Rds On (Max) @ Id, Vgs: 399 mOhm @ 3.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque2.528 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 20V 18A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4630pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 4.5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque124.512 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 18.5A DFN5X6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6370pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
|
pacote: 8-PowerSMD, Flat Leads |
Estoque60.408 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 9A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
- Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque2.864 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 40V 14.5A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 53.5W (Tc)
- Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque226.560 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 80V 5X6DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 40V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
|
pacote: 8-PowerSMD, Flat Leads |
Estoque7.120 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 500V 9A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 178W (Tc)
- Rds On (Max) @ Id, Vgs: 860 mOhm @ 4.5A, 10V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque7.088 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 25A DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.2W (Ta), 27W (Tc)
- Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
|
pacote: 8-PowerSMD, Flat Leads |
Estoque5.904 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 300V 0.9A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 900mA, 10V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (3x3)
- Package / Case: 8-PowerSMD, Flat Leads
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pacote: 8-PowerSMD, Flat Leads |
Estoque47.208 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 7A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 41.5W (Tc)
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
pacote: TO-220-3 |
Estoque14.748 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 2A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 56.8W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque144.612 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 8SOIC
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque2.144 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 6A
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque7.904 |
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Alpha & Omega Semiconductor Inc. |
IC REG BUCK SYNC ADJ 5A 8SOIC
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 4.5V
- Voltage - Input (Max): 18V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 18V
- Current - Output: 5A
- Frequency - Switching: 500kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SO Exposed Pad
|
pacote: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Estoque384.000 |
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Alpha & Omega Semiconductor Inc. |
IC REG BUCK ADJ 1.2A SOT23-6
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 4.5V
- Voltage - Input (Max): 36V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 36V
- Current - Output: 1.2A
- Frequency - Switching: 450kHz
- Synchronous Rectifier: No
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
|
pacote: SOT-23-6 |
Estoque6.176 |
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Alpha & Omega Semiconductor Inc. |
POWER IC EZBUCK
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 6.5V
- Voltage - Input (Max): 24V
- Voltage - Output (Min/Fixed): 0.6V
- Voltage - Output (Max): 1.791V
- Current - Output: 15A
- Frequency - Switching: 400kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 23-PowerTFQFN
- Supplier Device Package: 23-QFNA (4x4)
|
pacote: 23-PowerTFQFN |
Estoque4.640 |
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Alpha & Omega Semiconductor Inc. |
25V/55A DRMOS SMOD EN CONTROL TH
- Output Configuration: Half Bridge
- Applications: Synchronous Buck Converters
- Interface: PWM
- Load Type: Inductive, Capacitive
- Technology: DrMOS
- Rds On (Typ): -
- Current - Output / Channel: 55A
- Current - Peak Output: 120A
- Voltage - Supply: 4.5V ~ 5.5V
- Voltage - Load: 4.5V ~ 25V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: Bootstrap Circuit, Diode Emulation, Status Flag
- Fault Protection: Over Temperature, Shoot-Through, UVLO
- Mounting Type: Surface Mount
- Package / Case: 31-PowerVFQFN Module
- Supplier Device Package: 31-QFN (5x5)
|
pacote: - |
Estoque9.000 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 12A/12A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 20.5W (Tc)
- Rds On (Max) @ Id, Vgs: 9.8mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN-EP (3x3)
- Package / Case: 8-PowerVDFN
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Alpha & Omega Semiconductor Inc. |
N
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
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Alpha & Omega Semiconductor Inc. |
IC POWER STAGE MOD BUCK QFN
- Type: MOSFET
- Configuration: 1 Phase
- Current: 50 A
- Voltage: -
- Voltage - Isolation: -
- Package / Case: 31-PowerVFQFN Module
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