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Vishay Siliconix Produtos - Transistores - FET, MOSFET - Simples

Registros 4.844
Página  5/162
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SQJ174EP-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 60 V (D-S)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 293A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6111 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
pacote: -
Estoque17.829
MOSFET (Metal Oxide)
60 V
293A (Tc)
10V
3.5V @ 250µA
81 nC @ 10 V
6111 pF @ 25 V
±20V
-
500W (Tc)
2.9mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIUD406ED-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 500MA PPAK 0806

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.46Ohm @ 200mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 0806
  • Package / Case: PowerPAK® 0806
pacote: -
Estoque35.280
MOSFET (Metal Oxide)
30 V
500mA (Ta)
1.8V, 4.5V
1.1V @ 250µA
0.6 nC @ 4.5 V
17 pF @ 15 V
±8V
-
1.25W (Ta)
1.46Ohm @ 200mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 0806
PowerPAK® 0806
SIDR622DP-T1-RE3
Vishay Siliconix

N-CHANNEL 150-V (D-S) MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 56.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8DC
  • Package / Case: PowerPAK® SO-8
pacote: -
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MOSFET (Metal Oxide)
150 V
64.6A (Ta), 56.7A (Tc)
7.5V, 10V
4.5V @ 250µA
41 nC @ 10 V
1516 pF @ 75 V
±20V
-
6.25W (Ta), 125W (Tc)
17.7mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8DC
PowerPAK® SO-8
SIR184LDP-T1-RE3
Vishay Siliconix

N-CHANNEL 60 V (D-S) MOSFET POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
pacote: -
Estoque16.749
MOSFET (Metal Oxide)
60 V
21.5A (Ta), 73A (Tc)
4.5V, 10V
3V @ 250µA
41 nC @ 10 V
1950 pF @ 30 V
±20V
-
5W (Ta), 56.8W (Tc)
5.4mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIHH120N60E-T1-GE3
Vishay Siliconix

MOSFET N-CH 600V 24A PPAK 8 X 8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 8 x 8
  • Package / Case: 8-PowerTDFN
pacote: -
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MOSFET (Metal Oxide)
600 V
24A (Tc)
10V
5V @ 250µA
44 nC @ 10 V
1600 pF @ 100 V
±30V
-
156W (Tc)
120mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 8 x 8
8-PowerTDFN
SIR150DP-T1-RE3
Vishay Siliconix

MOSFET N-CH 45V 30.9A/110A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.71mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
pacote: -
Estoque39.033
MOSFET (Metal Oxide)
45 V
30.9A (Ta), 110A (Tc)
4.5V, 10V
2.3V @ 250µA
70 nC @ 10 V
4000 pF @ 20 V
+20V, -16V
-
5.2W (Ta), 65.7W (Tc)
2.71mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SUP60020E-GE3
Vishay Siliconix

MOSFET N-CH 80V 150A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10680 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: -
Estoque339
MOSFET (Metal Oxide)
80 V
150A (Tc)
7.5V, 10V
4V @ 250µA
227 nC @ 10 V
10680 pF @ 40 V
±20V
-
375W (Tc)
2.4mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRFBC30APBF-BE3
Vishay Siliconix

MOSFET N-CH 600V 3.6A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: -
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MOSFET (Metal Oxide)
600 V
3.6A (Tc)
10V
4.5V @ 250µA
23 nC @ 10 V
510 pF @ 25 V
±30V
-
74W (Tc)
2.2Ohm @ 2.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SQA401EEJ-T1_GE3
Vishay Siliconix

MOSFET P-CH 20V 2.68A PPAK SC70

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2.68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 13.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 113mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SC-70-6
  • Package / Case: PowerPAK® SC-70-6
pacote: -
Estoque8.835
MOSFET (Metal Oxide)
20 V
2.68A (Tc)
2.5V, 4.5V
1.5V @ 250µA
5.3 nC @ 4.5 V
375 pF @ 10 V
±8V
-
13.6W (Tc)
113mOhm @ 2A, 4.5V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SC-70-6
PowerPAK® SC-70-6
IRFRC20PBF-BE3
Vishay Siliconix

N-CHANNEL 600V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
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MOSFET (Metal Oxide)
600 V
2A (Tc)
10V
4V @ 250µA
18 nC @ 10 V
350 pF @ 25 V
±20V
-
2.5W (Ta), 42W (Tc)
4.4Ohm @ 1.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SQS840EN-T1_BE3
Vishay Siliconix

N-CHANNEL 40-V (D-S) 175C MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1031 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
pacote: -
Estoque17.904
MOSFET (Metal Oxide)
40 V
12A (Tc)
4.5V, 10V
2.5V @ 250µA
22.5 nC @ 10 V
1031 pF @ 20 V
±20V
-
33W (Tc)
20mOhm @ 7.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SQD25N15-52-T4_GE3
Vishay Siliconix

MOSFET N-CH 150V 25A TO252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
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MOSFET (Metal Oxide)
150 V
25A (Tc)
10V
4V @ 250µA
51 nC @ 10 V
2200 pF @ 25 V
±20V
-
107W (Tc)
52mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHA2N80E-GE3
Vishay Siliconix

MOSFET N-CH 800V 2.8A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 29W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
pacote: -
Estoque45
MOSFET (Metal Oxide)
800 V
2.8A (Tc)
10V
4V @ 250µA
19.6 nC @ 10 V
315 pF @ 100 V
±30V
-
29W (Tc)
2.75Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
SQJQ160E-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 60 V (D-S)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 602A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 16070 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 600W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 8 x 8
  • Package / Case: PowerPAK® 8 x 8
pacote: -
Estoque17.175
MOSFET (Metal Oxide)
60 V
602A (Tc)
10V
3.5V @ 250µA
275 nC @ 10 V
16070 pF @ 25 V
±20V
-
600W (Tc)
0.85mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 8 x 8
PowerPAK® 8 x 8
SQ3469EV-T1_BE3
Vishay Siliconix

P-CHANNEL 20-V (D-S) 175C MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacote: -
Estoque25.956
MOSFET (Metal Oxide)
20 V
8A (Tc)
4.5V, 10V
2.5V @ 25µA
27 nC @ 10 V
1020 pF @ 10 V
±20V
-
5W (Tc)
36mOhm @ 6.7A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
SISS5623DN-T1-GE3
Vishay Siliconix

P-CHANNEL 60 V (D-S) MOSFET POWE

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 36.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8S
  • Package / Case: PowerPAK® 1212-8S
pacote: -
Estoque34.728
MOSFET (Metal Oxide)
60 V
10.5A (Ta), 36.3A (Tc)
4.5V, 10V
2.6V @ 250µA
33 nC @ 10 V
1575 pF @ 30 V
±20V
-
4.8W (Ta), 56.8W (Tc)
24mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
SIHD6N65ET5-GE3
Vishay Siliconix

MOSFET N-CH 650V 7A TO252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
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MOSFET (Metal Oxide)
650 V
7A (Tc)
10V
4V @ 250µA
48 nC @ 10 V
820 pF @ 100 V
±30V
-
78W (Tc)
600mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
IRF530PBF-BE3
Vishay Siliconix

MOSFET N-CH 100V 14A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: -
Estoque2.517
MOSFET (Metal Oxide)
100 V
14A (Tc)
10V
4V @ 250µA
26 nC @ 10 V
670 pF @ 25 V
±20V
-
88W (Tc)
160mOhm @ 8.4A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
V30410-T1-GE3
Vishay Siliconix

MOSFET N-CH SMD

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SI1469DH-T1-BE3
Vishay Siliconix

MOSFET P-CH 20V 3.2A/2.7A SC70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 2.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6
  • Package / Case: 6-TSSOP, SC-88, SOT-363
pacote: -
Estoque1.704
MOSFET (Metal Oxide)
20 V
3.2A (Ta), 2.7A (Tc)
-
1.5V @ 250µA
8.5 nC @ 4.5 V
470 pF @ 10 V
±12V
-
1.5W (Ta), 2.78W (Tc)
80mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-6
6-TSSOP, SC-88, SOT-363
SIR5108DP-T1-RE3
Vishay Siliconix

N-CHANNEL 100 V (D-S) MOSFET POW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 55.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.45mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
pacote: -
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MOSFET (Metal Oxide)
100 V
15.4A (Ta), 55.9A (Tc)
7.5V, 10V
4V @ 250µA
23 nC @ 10 V
1150 pF @ 50 V
±20V
-
5.2W (Ta), 65.7W (Tc)
7.45mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIHF074N65E-GE3
Vishay Siliconix

E SERIES POWER MOSFET TO-220 FUL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2904 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
pacote: -
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MOSFET (Metal Oxide)
650 V
14A (Tc)
10V
5V @ 250µA
80 nC @ 10 V
2904 pF @ 100 V
±30V
-
39W (Tc)
79mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
SISS26LDN-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 23.7A/81.2A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8S
  • Package / Case: PowerPAK® 1212-8S
pacote: -
Estoque3.357
MOSFET (Metal Oxide)
60 V
23.7A (Ta), 81.2A (Tc)
4.5V, 10V
2.5V @ 250µA
48 nC @ 10 V
1980 pF @ 30 V
±20V
-
4.8W (Ta), 57W (Tc)
4.3mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
SIHFR024-GE3
Vishay Siliconix

MOSFET N-CHANNEL 60V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque5.661
MOSFET (Metal Oxide)
60 V
14A (Tc)
10V
4V @ 250µA
25 nC @ 10 V
640 pF @ 25 V
±20V
-
2.5W (Ta), 42W (Tc)
100mOhm @ 8.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SIA430DJT-T4-GE3
Vishay Siliconix

MOSFET N-CH 20V 12A/12A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SC-70-6
  • Package / Case: PowerPAK® SC-70-6
pacote: -
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MOSFET (Metal Oxide)
20 V
12A (Ta), 12A (Tc)
4.5V, 10V
3V @ 250µA
18 nC @ 10 V
800 pF @ 10 V
±20V
-
3.5W (Ta), 19.2W (Tc)
13.5mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6
PowerPAK® SC-70-6
SISH407DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 15.4A/25A PPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 93.8 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8SH
  • Package / Case: PowerPAK® 1212-8SH
pacote: -
Estoque81.474
MOSFET (Metal Oxide)
20 V
15.4A (Ta), 25A (Tc)
1.8V, 4.5V
1V @ 250µA
93.8 nC @ 8 V
2760 pF @ 10 V
±8V
-
3.6W (Ta), 33W (Tc)
9.5mOhm @ 15.3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8SH
PowerPAK® 1212-8SH
SQS140ELNW-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 40 V (D-S)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 153A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4051 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 119W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.53mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerPAK® 1212-8SLW
  • Package / Case: PowerPAK® 1212-8SLW
pacote: -
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MOSFET (Metal Oxide)
40 V
153A (Tc)
4.5V, 10V
2.5V @ 250µA
80 nC @ 10 V
4051 pF @ 25 V
±20V
-
119W (Tc)
2.53mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerPAK® 1212-8SLW
PowerPAK® 1212-8SLW
SI2308CDS-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 2.6A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 144mOhm @ 1.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: -
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MOSFET (Metal Oxide)
60 V
2.6A (Tc)
4.5V, 10V
3V @ 250µA
4 nC @ 10 V
105 pF @ 30 V
±20V
-
1.6W (Tc)
144mOhm @ 1.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SQJ164ELP-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 60 V (D-S)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 187W (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
pacote: -
Estoque17.994
MOSFET (Metal Oxide)
60 V
75A (Tc)
4.5V, 10V
2.5V @ 250µA
57 nC @ 10 V
3100 pF @ 25 V
±20V
-
187W (Tc)
12mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIS106DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 9.8A/16A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
  • Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
pacote: -
Estoque14.670
MOSFET (Metal Oxide)
60 V
9.8A (Ta), 16A (Tc)
7.5V, 10V
4V @ 250µA
13.5 nC @ 10 V
540 pF @ 30 V
±20V
-
3.2W (Ta), 24W (Tc)
18.5mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8