Página 9 - Vishay Siliconix Produtos - Transistores - FET, MOSFET - Arranjos

Nº de peças	Fabricante	Descrição	pacote	Estoque	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SI5504BDC-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 4A 1206-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Power - Max: 3.12W, 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	pacote: 8-SMD, Flat Lead	Estoque110.814	Logic Level Gate	30V	4A, 3.7A	65 mOhm @ 3.1A, 10V	3V @ 250µA	7nC @ 10V	220pF @ 15V	3.12W, 3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
SQJ200EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 20V 20A/60A PPAK SO FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 20A, 60A Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V Power - Max: 27W, 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric	pacote: PowerPAK? SO-8 Dual	Estoque28.530	Standard	20V	20A, 60A	8.8 mOhm @ 16A, 10V	2V @ 250µA	18nC @ 10V	975pF @ 10V	27W, 48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual Asymmetric
SIZ342DT-T1-GE3	Vishay Siliconix	MOSFET DL N-CH 30V POWERPAIR3X3 FET Type: 2 N-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V Power - Max: 3.6W, 4.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	pacote: 8-PowerWDFN	Estoque8.592	-	30V	15.7A (Ta), 100A (Tc)	11.5 mOhm @ 14A, 10V	2.4V @ 250µA	20nC @ 10V	650pF @ 15V	3.6W, 4.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
SI4590DY-T1-GE3	Vishay Siliconix	MOSFET N/P CHAN 100V SO8 DUAL FET Type: N and P-Channel FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A Rds On (Max) @ Id, Vgs: 57 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 50V Power - Max: 2.4W, 3.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque24.378	-	100V	3.4A, 2.8A	57 mOhm @ 2A, 10V	2.5V @ 250µA	11.5nC @ 10V	360pF @ 50V	2.4W, 3.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI3590DV-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 2.5A 6-TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	pacote: SOT-23-6 Thin, TSOT-23-6	Estoque653.100	Logic Level Gate	30V	2.5A, 1.7A	77 mOhm @ 3A, 4.5V	1.5V @ 250µA	4.5nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SISB46DN-T1-GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 40V 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 11.71 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V Power - Max: 23W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	pacote: PowerPAK? 1212-8 Dual	Estoque22.164	Standard	40V	34A (Tc)	11.71 mOhm @ 5A, 10V	2.2V @ 250µA	11nC @ 4.5V	1100pF @ 20V	23W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
SI1034CX-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V SC89-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 610mA (Ta) Rds On (Max) @ Id, Vgs: 396 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Power - Max: 220mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	pacote: SOT-563, SOT-666	Estoque1.913.280	Logic Level Gate	20V	610mA (Ta)	396 mOhm @ 500mA, 4.5V	1V @ 250µA	2nC @ 8V	43pF @ 10V	220mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
SIZ790DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 16A 6-POWERPAIR FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A, 35A Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Power - Max: 27W, 48W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair? Supplier Device Package: 6-PowerPair?	pacote: 6-PowerPair?	Estoque29.772	Logic Level Gate	30V	16A, 35A	9.3 mOhm @ 15A, 10V	2.2V @ 250µA	24nC @ 10V	830pF @ 15V	27W, 48W	-55°C ~ 150°C (TJ)	Surface Mount	6-PowerPair?	6-PowerPair?
SI4936ADY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 4.4A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.4A Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque477.192	Logic Level Gate	30V	4.4A	36 mOhm @ 5.9A, 10V	3V @ 250µA	20nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI7922DN-T1-E3	Vishay Siliconix	MOSFET 2N-CH 100V 1.8A 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.8A Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	pacote: PowerPAK? 1212-8 Dual	Estoque406.368	Logic Level Gate	100V	1.8A	195 mOhm @ 2.5A, 10V	3.5V @ 250µA	8nC @ 10V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
SI8902EDB-T2-E1	Vishay Siliconix	MOSFET 2N-CH 20V 3.9A 6-MFP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1V @ 980µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-MICRO FOOT?CSP Supplier Device Package: 6-Micro Foot?	pacote: 6-MICRO FOOT?CSP	Estoque826.728	Logic Level Gate	20V	3.9A	-	1V @ 980µA	-	-	1W	-55°C ~ 150°C (TJ)	Surface Mount	6-MICRO FOOT?CSP	6-Micro Foot?
SI7949DP-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 60V 3.2A PPAK SO-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.2A Rds On (Max) @ Id, Vgs: 64 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	pacote: PowerPAK? SO-8 Dual	Estoque25.356	Logic Level Gate	60V	3.2A	64 mOhm @ 5A, 10V	3V @ 250µA	40nC @ 10V	-	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI7900AEDN-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 6A 1212-8 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 26 mOhm @ 8.5A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	pacote: PowerPAK? 1212-8 Dual	Estoque1.348.440	Logic Level Gate	20V	6A	26 mOhm @ 8.5A, 4.5V	900mV @ 250µA	16nC @ 4.5V	-	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
SI7998DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 25A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A, 30A Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Power - Max: 22W, 40W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	pacote: PowerPAK? SO-8 Dual	Estoque6.108	Logic Level Gate	30V	25A, 30A	9.3 mOhm @ 15A, 10V	2.5V @ 250µA	26nC @ 10V	1100pF @ 15V	22W, 40W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI4618DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A Rds On (Max) @ Id, Vgs: 17 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V Power - Max: 1.98W, 4.16W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque1.490.928	Standard	30V	8A, 15.2A	17 mOhm @ 8A, 10V	2.5V @ 1mA	44nC @ 10V	1535pF @ 15V	1.98W, 4.16W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4830CDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Power - Max: 2.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque19.764	Logic Level Gate	30V	8A	20 mOhm @ 8A, 10V	3V @ 1mA	25nC @ 10V	950pF @ 15V	2.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI7212DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 4.9A 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	pacote: PowerPAK? 1212-8 Dual	Estoque161.460	Logic Level Gate	30V	4.9A	36 mOhm @ 6.8A, 10V	1.6V @ 250µA	11nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
SI7218DN-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 24A 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V Power - Max: 23W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	pacote: PowerPAK? 1212-8 Dual	Estoque2.791.392	Standard	30V	24A	25 mOhm @ 8A, 10V	3V @ 250µA	17nC @ 10V	700pF @ 15V	23W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
SI6954ADQ-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 3.1A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.1A Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	pacote: 8-TSSOP (0.173", 4.40mm Width)	Estoque136.824	Logic Level Gate	30V	3.1A	53 mOhm @ 3.4A, 10V	1V @ 250µA (Min)	16nC @ 10V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI1902DL-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 0.66A SC-70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 660mA Rds On (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	pacote: 6-TSSOP, SC-88, SOT-363	Estoque533.148	Logic Level Gate	20V	660mA	385 mOhm @ 660mA, 4.5V	1.5V @ 250µA	1.2nC @ 4.5V	-	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
SI1965DH-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 1.3A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	pacote: 6-TSSOP, SC-88, SOT-363	Estoque147.012	Logic Level Gate	12V	1.3A	390 mOhm @ 1A, 4.5V	1V @ 250µA	4.2nC @ 8V	120pF @ 6V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
SI1035X-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V SC-89 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 400mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	pacote: SOT-563, SOT-666	Estoque457.200	Logic Level Gate	20V	180mA, 145mA	5 Ohm @ 200mA, 4.5V	400mV @ 250µA (Min)	0.75nC @ 4.5V	-	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
SI7236DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 60A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20.7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V Power - Max: 46W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	pacote: PowerPAK? SO-8 Dual	Estoque17.844	Standard	20V	60A	5.2 mOhm @ 20.7A, 4.5V	1.5V @ 250µA	105nC @ 10V	4000pF @ 10V	46W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI7942DP-T1-E3	Vishay Siliconix	MOSFET 2N-CH 100V 3.8A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 49 mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	pacote: PowerPAK? SO-8 Dual	Estoque146.316	Logic Level Gate	100V	3.8A	49 mOhm @ 5.9A, 10V	4V @ 250µA	24nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI4904DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V Power - Max: 3.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque25.590	Standard	40V	8A	16 mOhm @ 5A, 10V	2V @ 250µA	85nC @ 10V	2390pF @ 20V	3.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4816BDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 5.8A 8-SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W, 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacote: 8-SOIC (0.154", 3.90mm Width)	Estoque55.704	Logic Level Gate	30V	5.8A, 8.2A	18.5 mOhm @ 6.8A, 10V	3V @ 250µA	10nC @ 5V	-	1W, 1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI7923DN-T1-E3	Vishay Siliconix	MOSFET 2P-CH 30V 4.3A 1212-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 47 mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	pacote: PowerPAK? 1212-8 Dual	Estoque67.332	Logic Level Gate	30V	4.3A	47 mOhm @ 6.4A, 10V	3V @ 250µA	21nC @ 10V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
SI5908DC-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 4.4A 1206-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.4A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	pacote: 8-SMD, Flat Lead	Estoque334.068	Logic Level Gate	20V	4.4A	40 mOhm @ 4.4A, 4.5V	1V @ 250µA	7.5nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
SIZ918DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 16A POWERPAIR FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A, 28A Rds On (Max) @ Id, Vgs: 12 mOhm @ 13.8A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V Power - Max: 29W, 100W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair? Supplier Device Package: 6-PowerPair?	pacote: 6-PowerPair?	Estoque24.456	Logic Level Gate	30V	16A, 28A	12 mOhm @ 13.8A, 10V	2.2V @ 250µA	21nC @ 10V	790pF @ 15V	29W, 100W	-55°C ~ 150°C (TJ)	Surface Mount	6-PowerPair?	6-PowerPair?
SI5517DU-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 6A CHIPFET FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 8.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? ChipFET? Dual Supplier Device Package: PowerPAK? ChipFet Dual	pacote: PowerPAK? ChipFET? Dual	Estoque7.704	Logic Level Gate	20V	6A	39 mOhm @ 4.4A, 4.5V	1V @ 250µA	16nC @ 8V	520pF @ 10V	8.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFET? Dual	PowerPAK? ChipFet Dual

SI5504BDC-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V 4A 1206-8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Power - Max: 3.12W, 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

pacote: 8-SMD, Flat Lead

Estoque110.814

Logic Level Gate

30V

4A, 3.7A

65 mOhm @ 3.1A, 10V

3V @ 250µA

7nC @ 10V

220pF @ 15V

3.12W, 3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

SQJ200EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 20V 20A/60A PPAK SO

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric

pacote: PowerPAK? SO-8 Dual

Estoque28.530

Standard

20V

20A, 60A

8.8 mOhm @ 16A, 10V

2V @ 250µA

18nC @ 10V

975pF @ 10V

27W, 48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

PowerPAK? SO-8 Dual Asymmetric

SIZ342DT-T1-GE3

Vishay Siliconix

MOSFET DL N-CH 30V POWERPAIR3X3

FET Type: 2 N-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

pacote: 8-PowerWDFN

Estoque8.592

-

30V

15.7A (Ta), 100A (Tc)

11.5 mOhm @ 14A, 10V

2.4V @ 250µA

20nC @ 10V

650pF @ 15V

3.6W, 4.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

SI4590DY-T1-GE3

Vishay Siliconix

MOSFET N/P CHAN 100V SO8 DUAL

FET Type: N and P-Channel
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Rds On (Max) @ Id, Vgs: 57 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 50V
Power - Max: 2.4W, 3.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque24.378

-

100V

3.4A, 2.8A

57 mOhm @ 2A, 10V

2.5V @ 250µA

11.5nC @ 10V

360pF @ 50V

2.4W, 3.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI3590DV-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V 2.5A 6-TSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

pacote: SOT-23-6 Thin, TSOT-23-6

Estoque653.100

Logic Level Gate

30V

2.5A, 1.7A

77 mOhm @ 3A, 4.5V

1.5V @ 250µA

4.5nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

SISB46DN-T1-GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 40V 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 11.71 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
Power - Max: 23W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

pacote: PowerPAK? 1212-8 Dual

Estoque22.164

Standard

40V

34A (Tc)

11.71 mOhm @ 5A, 10V

2.2V @ 250µA

11nC @ 4.5V

1100pF @ 20V

23W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

SI1034CX-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V SC89-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
Rds On (Max) @ Id, Vgs: 396 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Power - Max: 220mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

pacote: SOT-563, SOT-666

Estoque1.913.280

Logic Level Gate

20V

610mA (Ta)

396 mOhm @ 500mA, 4.5V

1V @ 250µA

2nC @ 8V

43pF @ 10V

220mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

SIZ790DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 16A 6-POWERPAIR

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair?
Supplier Device Package: 6-PowerPair?

pacote: 6-PowerPair?

Estoque29.772

Logic Level Gate

30V

16A, 35A

9.3 mOhm @ 15A, 10V

2.2V @ 250µA

24nC @ 10V

830pF @ 15V

27W, 48W

-55°C ~ 150°C (TJ)

Surface Mount

6-PowerPair?

SI4936ADY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 4.4A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque477.192

Logic Level Gate

30V

4.4A

36 mOhm @ 5.9A, 10V

3V @ 250µA

20nC @ 10V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI7922DN-T1-E3

Vishay Siliconix

MOSFET 2N-CH 100V 1.8A 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

pacote: PowerPAK? 1212-8 Dual

Estoque406.368

Logic Level Gate

100V

1.8A

195 mOhm @ 2.5A, 10V

3.5V @ 250µA

8nC @ 10V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

SI8902EDB-T2-E1

Vishay Siliconix

MOSFET 2N-CH 20V 3.9A 6-MFP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1V @ 980µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-MICRO FOOT?CSP
Supplier Device Package: 6-Micro Foot?

pacote: 6-MICRO FOOT?CSP

Estoque826.728

Logic Level Gate

20V

3.9A

-

1V @ 980µA

-

1W

-55°C ~ 150°C (TJ)

Surface Mount

6-MICRO FOOT?CSP

6-Micro Foot?

SI7949DP-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 60V 3.2A PPAK SO-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Rds On (Max) @ Id, Vgs: 64 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

pacote: PowerPAK? SO-8 Dual

Estoque25.356

Logic Level Gate

60V

3.2A

64 mOhm @ 5A, 10V

3V @ 250µA

40nC @ 10V

-

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SI7900AEDN-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 6A 1212-8

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 26 mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

pacote: PowerPAK? 1212-8 Dual

Estoque1.348.440

Logic Level Gate

20V

6A

26 mOhm @ 8.5A, 4.5V

900mV @ 250µA

16nC @ 4.5V

-

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

SI7998DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 25A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A, 30A
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Power - Max: 22W, 40W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

pacote: PowerPAK? SO-8 Dual

Estoque6.108

Logic Level Gate

30V

25A, 30A

9.3 mOhm @ 15A, 10V

2.5V @ 250µA

26nC @ 10V

1100pF @ 15V

22W, 40W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SI4618DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V
Power - Max: 1.98W, 4.16W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque1.490.928

Standard

30V

8A, 15.2A

17 mOhm @ 8A, 10V

2.5V @ 1mA

44nC @ 10V

1535pF @ 15V

1.98W, 4.16W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4830CDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Power - Max: 2.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque19.764

Logic Level Gate

30V

8A

20 mOhm @ 8A, 10V

3V @ 1mA

25nC @ 10V

950pF @ 15V

2.9W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI7212DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 4.9A 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

pacote: PowerPAK? 1212-8 Dual

Estoque161.460

Logic Level Gate

30V

4.9A

36 mOhm @ 6.8A, 10V

1.6V @ 250µA

11nC @ 4.5V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

SI7218DN-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 24A 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 24A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Power - Max: 23W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

pacote: PowerPAK? 1212-8 Dual

Estoque2.791.392

Standard

30V

24A

25 mOhm @ 8A, 10V

3V @ 250µA

17nC @ 10V

700pF @ 15V

23W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

SI6954ADQ-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 3.1A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

pacote: 8-TSSOP (0.173", 4.40mm Width)

Estoque136.824

Logic Level Gate

30V

3.1A

53 mOhm @ 3.4A, 10V

1V @ 250µA (Min)

16nC @ 10V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI1902DL-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 0.66A SC-70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA
Rds On (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

pacote: 6-TSSOP, SC-88, SOT-363

Estoque533.148

Logic Level Gate

20V

660mA

385 mOhm @ 660mA, 4.5V

1.5V @ 250µA

1.2nC @ 4.5V

-

270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

SI1965DH-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 1.3A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

pacote: 6-TSSOP, SC-88, SOT-363

Estoque147.012

Logic Level Gate

12V

1.3A

390 mOhm @ 1A, 4.5V

1V @ 250µA

4.2nC @ 8V

120pF @ 6V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

SI1035X-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V SC-89

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

pacote: SOT-563, SOT-666

Estoque457.200

Logic Level Gate

20V

180mA, 145mA

5 Ohm @ 200mA, 4.5V

400mV @ 250µA (Min)

0.75nC @ 4.5V

-

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

SI7236DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 60A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20.7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V
Power - Max: 46W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

pacote: PowerPAK? SO-8 Dual

Estoque17.844

Standard

20V

60A

5.2 mOhm @ 20.7A, 4.5V

1.5V @ 250µA

105nC @ 10V

4000pF @ 10V

46W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SI7942DP-T1-E3

Vishay Siliconix

MOSFET 2N-CH 100V 3.8A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Rds On (Max) @ Id, Vgs: 49 mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

pacote: PowerPAK? SO-8 Dual

Estoque146.316

Logic Level Gate

100V

3.8A

49 mOhm @ 5.9A, 10V

4V @ 250µA

24nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SI4904DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 8A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Power - Max: 3.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque25.590

Standard

40V

8A

16 mOhm @ 5A, 10V

2V @ 250µA

85nC @ 10V

2390pF @ 20V

3.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4816BDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 5.8A 8-SOIC

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W, 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

Estoque55.704

Logic Level Gate

30V

5.8A, 8.2A

18.5 mOhm @ 6.8A, 10V

3V @ 250µA

10nC @ 5V

-

1W, 1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI7923DN-T1-E3

Vishay Siliconix

MOSFET 2P-CH 30V 4.3A 1212-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 47 mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

pacote: PowerPAK? 1212-8 Dual

Estoque67.332

Logic Level Gate

30V

4.3A

47 mOhm @ 6.4A, 10V

3V @ 250µA

21nC @ 10V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

SI5908DC-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 4.4A 1206-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

pacote: 8-SMD, Flat Lead

Estoque334.068

Logic Level Gate

20V

4.4A

40 mOhm @ 4.4A, 4.5V

1V @ 250µA

7.5nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

SIZ918DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 16A POWERPAIR

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A, 28A
Rds On (Max) @ Id, Vgs: 12 mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Power - Max: 29W, 100W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair?
Supplier Device Package: 6-PowerPair?

pacote: 6-PowerPair?

Estoque24.456

Logic Level Gate

30V

16A, 28A

12 mOhm @ 13.8A, 10V

2.2V @ 250µA

21nC @ 10V

790pF @ 15V

29W, 100W

-55°C ~ 150°C (TJ)

Surface Mount

6-PowerPair?

SI5517DU-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 6A CHIPFET

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Power - Max: 8.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? ChipFET? Dual
Supplier Device Package: PowerPAK? ChipFet Dual

pacote: PowerPAK? ChipFET? Dual

Estoque7.704

Logic Level Gate

20V

6A

39 mOhm @ 4.4A, 4.5V

1V @ 250µA

16nC @ 8V

520pF @ 10V

8.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? ChipFET? Dual

PowerPAK? ChipFet Dual