Página 73 - Toshiba Semiconductor and Storage Produtos

Nº de peças	Fabricante	Descrição	pacote	Estoque
2SK2035(T5L,F,T)	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 0.1A SSM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V Vgs (Max): 10V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 2.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SSM Package / Case: SC-75, SOT-416	pacote: SC-75, SOT-416	Estoque396.000
TK40P04M1(T6RSS-Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 40A 3DP 2-7K1A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DP Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	pacote: TO-252-3, DPak (2 Leads + Tab), SC-63	Estoque5.024
2SK3466(TE24L,Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 5A SC-97 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TFP (9.2x10.7) Package / Case: SC-97	pacote: SC-97	Estoque5.344
TK5A65W,S5X	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 5.2A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 170µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	pacote: TO-220-3 Full Pack, Isolated Tab	Estoque2.100
TPH1R204PL,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 150A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 1.24 mOhm @ 50A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	pacote: 8-PowerVDFN	Estoque3.440
2SC2229-O(SHP1,F,M	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	pacote: TO-226-3, TO-92-3 Long Body	Estoque6.896
RN4985,LF(CT	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100µA (ICBO) Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	pacote: 6-TSSOP, SC-88, SOT-363	Estoque7.184
DSF01S30SC(TPL3)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 100MA SC2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 9.3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: SC2 Operating Temperature - Junction: 125°C (Max)	pacote: 2-SMD, No Lead	Estoque6.016
CBS10S30,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 1A CST2B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: 135pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: CST2B Operating Temperature - Junction: 125°C (Max)	pacote: 2-SMD, No Lead	Estoque73.692
1SS378(TE85L,F)	Toshiba Semiconductor and Storage	DIODE ARRAY SCHOTTKY 10V USM Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 10V Operating Temperature - Junction: 125°C (Max) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	pacote: SC-70, SOT-323	Estoque21.552
TA76431S(T6NEPP,AF	Toshiba Semiconductor and Storage	IC REG LINEAR 100MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 100mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	pacote: TO-226-3, TO-92-3 Long Body	Estoque7.680
TCR2EE50,LM(T	Toshiba Semiconductor and Storage	IC REG LINEAR 5V 200MA ESV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 60µA PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	pacote: SOT-553	Estoque3.344
TCK207G,LF	Toshiba Semiconductor and Storage	IC LOAD SWITCH X34 2A WCSP4C Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 0.75 V ~ 3.6 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Rds On (Typ): 18.1 mOhm Input Type: Non-Inverting Features: Load Discharge, Slew Rate Controlled Fault Protection: Reverse Current Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 4-XFBGA, CSPBGA Supplier Device Package: 4-WCSP (0.90x0.90)	pacote: 4-XFBGA, CSPBGA	Estoque7.456
TB62747AFNAG,EL	Toshiba Semiconductor and Storage	IC LED DVR 16CH CC 24SSOP Type: Linear Topology: Shift Register Internal Switch(s): Yes Number of Outputs: 16 Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Voltage - Output: 26V Current - Output / Channel: 45mA Frequency: - Dimming: - Applications: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-LSSOP (0.154", 3.90mm Width) Supplier Device Package: 24-SSOP	pacote: 24-LSSOP (0.154", 3.90mm Width)	Estoque7.584
TC74AC32P	Toshiba Semiconductor and Storage	IC GATE OR 4CH 2-INP 14-DIP Logic Type: OR Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 4µA Current - Output High, Low: 24mA, 24mA Logic Level - Low: 0.5 V ~ 1.65 V Logic Level - High: 1.5 V ~ 3.85 V Max Propagation Delay @ V, Max CL: 7.4ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Supplier Device Package: 14-DIP Package / Case: 14-DIP (0.300", 7.62mm)	pacote: 14-DIP (0.300", 7.62mm)	Estoque7.792
TC7SET17F,LJ(CT	Toshiba Semiconductor and Storage	IC BUFFER SCHM TRIG 5-SSOP Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 1 Input Type: Schmitt Trigger Output Type: Push-Pull Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	pacote: SC-74A, SOT-753	Estoque26.250
DF2B7M3SC,L3F	Toshiba Semiconductor and Storage	TVS DIODE 5VWM 13VC SC2 Type: Steering (Rail to Rail) Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5V (Max) Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 13V (Typ) Current - Peak Pulse (10/1000µs): 1A (8/20µs) Power - Peak Pulse: 50W Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 0.1pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: SC2	pacote: 2-SMD, No Lead	Estoque101.496
TLP104(V4-TPL,E	Toshiba Semiconductor and Storage	OPTOISO 3.75KV OPEN COLL SO6 Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 15kV/µs Input Type: DC Output Type: Open Collector Current - Output / Channel: 8mA Data Rate: 1Mbps Propagation Delay tpLH / tpHL (Max): 550ns, 400ns Rise / Fall Time (Typ): - Voltage - Forward (Vf) (Typ): 1.61V Current - DC Forward (If) (Max): 25mA Voltage - Supply: 4.5 V ~ 30 V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads Supplier Device Package: 6-SO, 5 Lead	pacote: 6-SOIC (0.179", 4.55mm Width) 5 Leads	Estoque5.094
TC7MPB9327FT(EL)	Toshiba Semiconductor and Storage	PB-F LOW VOLTAGE/LOW POWER DUAL Type: Bus Switch Circuit: 2 x 1:2 Independent Circuits: 1 Current - Output High, Low: - Voltage Supply Source: Dual Supply Voltage - Supply: 1.65 V ~ 5 V, 2.3 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP	pacote: 14-TSSOP (0.173", 4.40mm Width)	Estoque3.600
74HC86D	Toshiba Semiconductor and Storage	IC GATE XOR 4CH 2-INP 14SOP Logic Type: XOR (Exclusive OR) Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 5.2mA, 5.2mA Logic Level - Low: 0.5 V ~ 1.8 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 14-SOP Package / Case: 14-SOIC (0.154", 3.90mm Width)	pacote: 14-SOIC (0.154", 3.90mm Width)	Estoque17.424
TCR5BM11A,L3F	Toshiba Semiconductor and Storage	IC REG LIN 1.1V 500MA 5DFNB Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.1V Voltage - Output (Max): - Voltage Dropout (Max): 0.14V @ 500mA Current - Output: 500mA Current - Quiescent (Iq): 36µA Current - Supply (Max): - PSRR: 98dB (1kHz) Control Features: Current Limit, Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: 5-DFNB (1.2x1.2)	pacote: 4-XDFN Exposed Pad	Estoque48.468
TPN7R006PL-L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 54A 8TSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 630mW (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.1x3.1) Package / Case: 8-PowerVDFN	pacote: -	Estoque16.596
TK16J60W5-S1VQ	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	pacote: -	Estoque63
TCTH012AE-LF-CT	Toshiba Semiconductor and Storage	CMOS LINEAR IC OVER TEMP DETECTI Type: Thermal Number of Voltages Monitored: 1 Output: Push-Pull, Totem Pole Reset: - Reset Timeout: 17µs Typical Voltage - Threshold: 0.5V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	pacote: -	Estoque24.000
TK49N65W-S1F	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR TO2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 24.6A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	pacote: -	Estoque168
RN1404-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V SMINI Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	pacote: -	Request a Quote
TCR2EN36-LF-SE	Toshiba Semiconductor and Storage	LDO REG VOUT=3.6V IOUT=200MA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.6V Voltage - Output (Max): - Voltage Dropout (Max): 0.18V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 60 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	pacote: -	Estoque30.000
SSM6K406TU-LF	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 4.4A UF6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 2A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UF6 Package / Case: 6-SMD, Flat Leads	pacote: -	Estoque17.595

2SK2035(T5L,F,T)

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 0.1A SSM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Vgs (Max): 10V
FET Feature: -
Power Dissipation (Max): 100mW (Ta)
Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 2.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SSM
Package / Case: SC-75, SOT-416

pacote: SC-75, SOT-416

Estoque396.000

TK40P04M1(T6RSS-Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 40A 3DP 2-7K1A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DP
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacote: TO-252-3, DPak (2 Leads + Tab), SC-63

Estoque5.024

2SK3466(TE24L,Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 5A SC-97

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TFP (9.2x10.7)
Package / Case: SC-97

pacote: SC-97

Estoque5.344

TK5A65W,S5X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 5.2A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.6A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack, Isolated Tab

pacote: TO-220-3 Full Pack, Isolated Tab

Estoque2.100

TPH1R204PL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 150A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.24 mOhm @ 50A, 10V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

pacote: 8-PowerVDFN

Estoque3.440

2SC2229-O(SHP1,F,M

Toshiba Semiconductor and Storage

TRANS NPN 50MA 150V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

pacote: TO-226-3, TO-92-3 Long Body

Estoque6.896

RN4985,LF(CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
Frequency - Transition: 250MHz, 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

pacote: 6-TSSOP, SC-88, SOT-363

Estoque7.184

DSF01S30SC(TPL3)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 100MA SC2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: 9.3pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: SC2
Operating Temperature - Junction: 125°C (Max)

pacote: 2-SMD, No Lead

Estoque6.016

CBS10S30,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 1A CST2B

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: 135pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: CST2B
Operating Temperature - Junction: 125°C (Max)

pacote: 2-SMD, No Lead

Estoque73.692

1SS378(TE85L,F)

Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 10V USM

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 10V
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20µA @ 10V
Operating Temperature - Junction: 125°C (Max)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

pacote: SC-70, SOT-323

Estoque21.552

TA76431S(T6NEPP,AF

Toshiba Semiconductor and Storage

IC REG LINEAR 100MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 100mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

pacote: TO-226-3, TO-92-3 Long Body

Estoque7.680

TCR2EE50,LM(T

Toshiba Semiconductor and Storage

IC REG LINEAR 5V 200MA ESV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 60µA
PSRR: 73dB (1kHz)
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

pacote: SOT-553

Estoque3.344

TCK207G,LF

Toshiba Semiconductor and Storage

IC LOAD SWITCH X34 2A WCSP4C

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 0.75 V ~ 3.6 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Rds On (Typ): 18.1 mOhm
Input Type: Non-Inverting
Features: Load Discharge, Slew Rate Controlled
Fault Protection: Reverse Current
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-WCSP (0.90x0.90)

pacote: 4-XFBGA, CSPBGA

Estoque7.456

TB62747AFNAG,EL

Toshiba Semiconductor and Storage

IC LED DVR 16CH CC 24SSOP

Type: Linear
Topology: Shift Register
Internal Switch(s): Yes
Number of Outputs: 16
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Voltage - Output: 26V
Current - Output / Channel: 45mA
Frequency: -
Dimming: -
Applications: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-LSSOP (0.154", 3.90mm Width)
Supplier Device Package: 24-SSOP

pacote: 24-LSSOP (0.154", 3.90mm Width)

Estoque7.584

TC74AC32P

Toshiba Semiconductor and Storage

IC GATE OR 4CH 2-INP 14-DIP

Logic Type: OR Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 4µA
Current - Output High, Low: 24mA, 24mA
Logic Level - Low: 0.5 V ~ 1.65 V
Logic Level - High: 1.5 V ~ 3.85 V
Max Propagation Delay @ V, Max CL: 7.4ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Supplier Device Package: 14-DIP
Package / Case: 14-DIP (0.300", 7.62mm)

pacote: 14-DIP (0.300", 7.62mm)

Estoque7.792

TC7SET17F,LJ(CT

Toshiba Semiconductor and Storage

IC BUFFER SCHM TRIG 5-SSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Output Type: Push-Pull
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

pacote: SC-74A, SOT-753

Estoque26.250

DF2B7M3SC,L3F

Toshiba Semiconductor and Storage

TVS DIODE 5VWM 13VC SC2

Type: Steering (Rail to Rail)
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5V (Max)
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Power - Peak Pulse: 50W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: SC2

pacote: 2-SMD, No Lead

Estoque101.496

TLP104(V4-TPL,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV OPEN COLL SO6

Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 3750Vrms
Common Mode Transient Immunity (Min): 15kV/µs
Input Type: DC
Output Type: Open Collector
Current - Output / Channel: 8mA
Data Rate: 1Mbps
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Rise / Fall Time (Typ): -
Voltage - Forward (Vf) (Typ): 1.61V
Current - DC Forward (If) (Max): 25mA
Voltage - Supply: 4.5 V ~ 30 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
Supplier Device Package: 6-SO, 5 Lead

pacote: 6-SOIC (0.179", 4.55mm Width) 5 Leads

Estoque5.094

TC7MPB9327FT(EL)

Toshiba Semiconductor and Storage

PB-F LOW VOLTAGE/LOW POWER DUAL

Type: Bus Switch
Circuit: 2 x 1:2
Independent Circuits: 1
Current - Output High, Low: -
Voltage Supply Source: Dual Supply
Voltage - Supply: 1.65 V ~ 5 V, 2.3 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP

pacote: 14-TSSOP (0.173", 4.40mm Width)

Estoque3.600

74HC86D

Toshiba Semiconductor and Storage

IC GATE XOR 4CH 2-INP 14SOP

Logic Type: XOR (Exclusive OR)
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 5.2mA, 5.2mA
Logic Level - Low: 0.5 V ~ 1.8 V
Logic Level - High: 1.5 V ~ 4.2 V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 14-SOP
Package / Case: 14-SOIC (0.154", 3.90mm Width)

pacote: 14-SOIC (0.154", 3.90mm Width)

Estoque17.424

TCR5BM11A,L3F

Toshiba Semiconductor and Storage

IC REG LIN 1.1V 500MA 5DFNB

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.1V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.14V @ 500mA
Current - Output: 500mA
Current - Quiescent (Iq): 36µA
Current - Supply (Max): -
PSRR: 98dB (1kHz)
Control Features: Current Limit, Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XDFN Exposed Pad
Supplier Device Package: 5-DFNB (1.2x1.2)

pacote: 4-XDFN Exposed Pad

Estoque48.468

TPN7R006PL-L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 54A 8TSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Package / Case: 8-PowerVDFN

pacote: -

Estoque16.596

TK16J60W5-S1VQ

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-3P(N)
Package / Case: TO-3P-3, SC-65-3

pacote: -

Estoque63

TCTH012AE-LF-CT

Toshiba Semiconductor and Storage

CMOS LINEAR IC OVER TEMP DETECTI

Type: Thermal
Number of Voltages Monitored: 1
Output: Push-Pull, Totem Pole
Reset: -
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

pacote: -

Estoque24.000

TK49N65W-S1F

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO2

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 24.6A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

pacote: -

Estoque168

RN1404-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

pacote: -

Request a Quote

TCR2EN36-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=3.6V IOUT=200MA

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.6V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.18V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 60 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

pacote: -

Estoque30.000

SSM6K406TU-LF

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 4.4A UF6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 2A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: UF6
Package / Case: 6-SMD, Flat Leads

pacote: -

Estoque17.595