Toshiba Semiconductor and Storage Produtos

2SK208-Y(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N-CH 50V S-MINI

• FET Type: N-Channel
• Voltage - Breakdown (V(BR)GSS): -
• Drain to Source Voltage (Vdss): -
• Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
• Current Drain (Id) - Max: -
• Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
• Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
• Resistance - RDS(On): -
• Power - Max: 100mW
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

pacote: TO-236-3, SC-59, SOT-23-3

2SK3844(Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 45A TO220NIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 23A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220NIS
• Package / Case: TO-220-3 Full Pack

pacote: TO-220-3 Full Pack

TPCA8010-H(TE12LQM

Toshiba Semiconductor and Storage

MOSFET N-CH 200V 5.5A SOP-8 ADV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
• Rds On (Max) @ Id, Vgs: 450 mOhm @ 2.7A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

pacote: 8-PowerVDFN

TPCA8008-H(TE12LQM

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 4A SOP-8 ADV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
• Rds On (Max) @ Id, Vgs: 580 mOhm @ 2A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

pacote: 8-PowerVDFN

TPC8033-H(TE12LQM)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 17A SOP8 2-6J1B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3713pF @ 10V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 8.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP (5.5x6.0)
• Package / Case: 8-SOIC (0.173", 4.40mm Width)

pacote: 8-SOIC (0.173", 4.40mm Width)

2SK2916(F)

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 14A TO-3PN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 80W (Tc)
• Rds On (Max) @ Id, Vgs: 400 mOhm @ 7A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P(N)IS
• Package / Case: TO-3P-3, SC-65-3

pacote: TO-3P-3, SC-65-3

TK10A60W,S4X

Toshiba Semiconductor and Storage

MOSFET N CH 600V 9.7A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.7V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3 Full Pack

pacote: TO-220-3 Full Pack

TK42A12N1,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 120V 42A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 120V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 60V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 21A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack, Isolated Tab

pacote: TO-220-3 Full Pack, Isolated Tab

2SA1020-Y,HOF(M

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
• Power - Max: 900mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

pacote: TO-226-3, TO-92-3 Long Body

RN2110CT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.05W CST3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 20V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: -
• Power - Max: 50mW
• Mounting Type: Surface Mount
• Package / Case: SC-101, SOT-883
• Supplier Device Package: CST3

pacote: SC-101, SOT-883

RN1702JE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ESV

• Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

pacote: SOT-553

1SS196(TE85L,F)

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SC59-3

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Capacitance @ Vr, F: 3pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SC-59-3
• Operating Temperature - Junction: 125°C (Max)

pacote: TO-236-3, SC-59, SOT-23-3

TC7SZ17FU,LJ(CT

Toshiba Semiconductor and Storage

IC SCHMITT TRIGGER BUFFER USV

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: Schmitt Trigger
• Output Type: Push-Pull
• Current - Output High, Low: 32mA, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: USV

pacote: 5-TSSOP, SC-70-5, SOT-353

DF2B18FU,H3F

Toshiba Semiconductor and Storage

TVS DIODE 12VWM 33VC

• Type: Steering (Rail to Rail)
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 12V
• Voltage - Breakdown (Min): 16.2V
• Voltage - Clamping (Max) @ Ipp: 33V
• Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
• Power - Peak Pulse: 80W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: 9pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: USC

pacote: SC-76, SOD-323

DF2B6M4CT,L3F

Toshiba Semiconductor and Storage

ESD DIODE BI-DIRECTIONAL

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 5.5V (Max)
• Voltage - Breakdown (Min): 5.6V
• Voltage - Clamping (Max) @ Ipp: 15V
• Current - Peak Pulse (10/1000µs): 2A (8/20µs)
• Power - Peak Pulse: 30W
• Power Line Protection: No
• Applications: -
• Capacitance @ Frequency: 0.2pF @ 1MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: CST2

pacote: SOD-882

TLP2770(D4-TP,E

Toshiba Semiconductor and Storage

OPTOISO 5KV TRI-STATE S06L

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 5000Vrms
• Common Mode Transient Immunity (Min): 20kV/µs
• Input Type: DC
• Output Type: Tri-State
• Current - Output / Channel: 10mA
• Data Rate: 20MBd
• Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
• Rise / Fall Time (Typ): 1.3ns, 1ns
• Voltage - Forward (Vf) (Typ): 1.5V
• Current - DC Forward (If) (Max): 8mA
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC
• Supplier Device Package: 6-SO

pacote: 6-SOIC

TBD62781AFWG,EL

Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: 18-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 18-SOP

pacote: 18-SOIC (0.295", 7.50mm Width)

TW030N120C-S1F

Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247 30MO

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 5V @ 13mA
• Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 249W (Tc)
• Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 18V
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

pacote: -

TMPM3HNFDAFG

Toshiba Semiconductor and Storage

MCU,M3,120MHZ,512KBMEM/66KBRAM,Q

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 120MHz
• Connectivity: I2C, SPI, UART/USART
• Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
• Number of I/O: 93
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• EEPROM Size: 32K x 8
• RAM Size: 64K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 17x12b SAR; D/A 2x8b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

pacote: -

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RN1301-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70

pacote: -

TK4K1A60F-S4X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 190µA
• Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 4.1Ohm @ 1A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

pacote: -

TCR2DG22-LF

Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.2V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.14V @ 100mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 70 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UFBGA, WLCSP
• Supplier Device Package: 4-WCSP (0.79x0.79)

pacote: -

Request a Quote

RN1102MFV-L3XHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

pacote: -

TCK128BG-LF

Toshiba Semiconductor and Storage

LOAD SWITCH IC, V=1.0V-5.5V, IOU

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 1V ~ 5.5V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1A
• Rds On (Typ): 343mOhm
• Input Type: Non-Inverting
• Features: Load Discharge, Slew Rate Controlled
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 4-XFBGA, CSPBGA
• Supplier Device Package: 4-WCSPG (0.65x0.65)

pacote: -

TK14V65W-LQ

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DTM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 690µA
• Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 139W (Tc)
• Rds On (Max) @ Id, Vgs: 280mOhm @ 6.9A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: 4-DFN-EP (8x8)
• Package / Case: 4-VSFN Exposed Pad

pacote: -

TC78B004FTG-EL

Toshiba Semiconductor and Storage

SENSORED BRUSHLESS MOTOR CONTROL

• Motor Type - Stepper: Multiphase
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Controller - Speed
• Output Configuration: Pre-Driver - Half Bridge (3)
• Interface: PWM
• Technology: NMOS
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 100mA
• Voltage - Supply: 10V ~ 28V
• Voltage - Load: -
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 40-WFQFN Exposed Pad
• Supplier Device Package: 40-WQFN (6x6)

pacote: -

XPJ1R004PB-LXHQ

Toshiba Semiconductor and Storage

40V; UMOS9; MOSFET 1MOHM; L-TOGL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 223W (Tc)
• Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: S-TOGL™
• Package / Case: 5-PowerSFN

pacote: -

HN1B01FU-Y-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + NPN TR VCEO:-50

• Transistor Type: 1 NPN, 1 PNP
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
• Power - Max: 200mW
• Frequency - Transition: 120MHz, 150MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

pacote: -