Página 106 - Toshiba Semiconductor and Storage Produtos

Nº de peças	Fabricante	Descrição	pacote	Estoque
TK80S06K3L(T6L1,NQ	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 80A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	pacote: TO-252-3, DPak (2 Leads + Tab), SC-63	Estoque7.856
TK8A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 8A TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	pacote: TO-220-3 Full Pack	Estoque2.480
TK3P50D,RQ(S	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 3A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	pacote: TO-252-3, DPak (2 Leads + Tab), SC-63	Estoque6.336
2SC2859-Y(TE85L,F)	Toshiba Semiconductor and Storage	TRANS NPN 30V 0.5A S-MINI Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Power - Max: 150mW Frequency - Transition: 300MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	pacote: TO-236-3, SC-59, SOT-23-3	Estoque3.616
2SC2714-Y(TE85L,F)	Toshiba Semiconductor and Storage	TRANSISTOR NPN S-MINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.5dB @ 100MHz Gain: 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	pacote: TO-236-3, SC-59, SOT-23-3	Estoque100.962
JDH2S01FSTPL3	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 4V 25MA FSC Diode Type: Schottky - Single Voltage - Peak Reverse (Max): 4V Current - Max: 25mA Capacitance @ Vr, F: 0.6pF @ 0.2V, 1MHz Resistance @ If, F: - Power Dissipation (Max): - Operating Temperature: 125°C (TJ) Package / Case: 2-SMD, Flat Lead Supplier Device Package: fSC	pacote: 2-SMD, Flat Lead	Estoque105.012
TCR3DM33,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 3.3V 300MA 4DFN Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): 65µA ~ 78µA PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-UDFN Exposed Pad Supplier Device Package: 4-DFN (1x1)	pacote: 4-UDFN Exposed Pad	Estoque5.968
TCR5AM095,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 0.95V 500MA 5DFN Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 0.95V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): 55µA ~ 68µA PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: 5-DFNB (1.2x1.2)	pacote: 4-XDFN Exposed Pad	Estoque41.472
TC74LCX373FK(EL,K)	Toshiba Semiconductor and Storage	IC OCTAL D-TYPE LATCH 20VSSOP Logic Type: D-Type Latch Circuit: 8:8 Output Type: Tri-State Voltage - Supply: 1.65 V ~ 3.6 V Independent Circuits: 1 Delay Time - Propagation: 1.5ns Current - Output High, Low: 24mA, 24mA Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 20-VFSOP (0.118", 3.00mm Width) Supplier Device Package: 20-VSSOP	pacote: 20-VFSOP (0.118", 3.00mm Width)	Estoque22.728
TC7SZ02F,LJ(CT	Toshiba Semiconductor and Storage	IC GATE NOR 1CH 2-INP SMV Logic Type: NOR Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 1.8 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 32mA, 32mA Logic Level - Low: - Logic Level - High: - Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: SMV Package / Case: SC-74A, SOT-753	pacote: SC-74A, SOT-753	Estoque22.356
TC74HC173APF	Toshiba Semiconductor and Storage	IC D-TYPE POS TRG SNGL 16DIP Function: Master Reset Type: D-Type Output Type: Tri-State, Non-Inverted Number of Elements: 1 Number of Bits per Element: 4 Clock Frequency: 84MHz Max Propagation Delay @ V, Max CL: 26ns @ 6V, 150pF Trigger Type: Positive Edge Current - Output High, Low: 7.8mA, 7.8mA Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Iq): 4µA Input Capacitance: 5pF Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm)	pacote: 16-DIP (0.300", 7.62mm)	Estoque7.968
TC7W34FK(TE85L)	Toshiba Semiconductor and Storage	IC BUFFER TRIPLE NON-INV US8 Logic Type: Buffer, Non-Inverting Number of Elements: 3 Number of Bits per Element: 1 Input Type: - Output Type: - Current - Output High, Low: 5.2mA, 5.2mA Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Supplier Device Package: 8-SSOP	pacote: 8-VFSOP (0.091", 2.30mm Width)	Estoque4.320
TC7WB67CL8X,LF	Toshiba Semiconductor and Storage	IC USB SWITCH SPST DUAL MP8 Applications: - Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST Number of Channels: 2 On-State Resistance (Max): 10 Ohm Voltage - Supply, Single (V+): 1.65 V ~ 5.5 V Voltage - Supply, Dual (V±): - -3db Bandwidth: - Features: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 8-UFQFN Supplier Device Package: MP8	pacote: 8-UFQFN	Estoque3.504
TMP95C061BFG(Z)	Toshiba Semiconductor and Storage	IC MCU 16BIT ROMLESS 100QFP Core Processor: 900/H Core Size: 16-Bit Speed: 25MHz Connectivity: EBI/EMI, SIO, UART/USART Peripherals: DMA, WDT Number of I/O: 56 Program Memory Size: - Program Memory Type: ROMless EEPROM Size: - RAM Size: - Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V Data Converters: A/D 4x10b Oscillator Type: External Operating Temperature: -20°C ~ 70°C (TA) Mounting Type: - Package / Case: 100-BFQFP Supplier Device Package: 100-QFP (14x14)	pacote: 100-BFQFP	Estoque3.264
TC32306FTG,EL	Toshiba Semiconductor and Storage	IC RF TXRX ISM<1GHZ 36-VFQFN Type: TxRx Only RF Family/Standard: General ISM < 1GHz Protocol: - Modulation: ASK, FSK Frequency: 315MHz, 434MHz, 868MHz, 915MHz Data Rate (Max): - Power - Output: 10dBm Sensitivity: -121dBm Memory Size: - Serial Interfaces: SPI GPIO: - Voltage - Supply: 2 V ~ 3.3 V, 2.4 V ~ 5.5 V Current - Receiving: 9.2mA ~ 11.1mA Current - Transmitting: 4.8mA ~ 12mA Operating Temperature: -40°C ~ 110°C Package / Case: 36-VFQFN Exposed Pad	pacote: 36-VFQFN Exposed Pad	Estoque17.214
TLP4597G(F)	Toshiba Semiconductor and Storage	PHOTORELAY MOSFET OUT 3MA 6-DIP Circuit: SPST-NC (1 Form B) Output Type: AC, DC On-State Resistance (Max): 25 Ohm Load Current: 150mA Voltage - Input: 1.15VDC Voltage - Load: 0 ~ 350 V Mounting Type: Through Hole Termination Style: PC Pin Package / Case: 6-DIP (0.300", 7.62mm) Supplier Device Package: 6-DIP Relay Type: Relay	pacote: 6-DIP (0.300", 7.62mm)	Estoque5.634
TLP168J(TPR,U,C,F)	Toshiba Semiconductor and Storage	OPTOISOLATOR 2.5KV TRIAC 6MFSOP Output Type: Triac Zero Crossing Circuit: Yes Number of Channels: 1 Voltage - Isolation: 2500Vrms Voltage - Off State: 600V Static dV/dt (Min): 200V/µs Current - LED Trigger (Ift) (Max): 3mA Current - On State (It (RMS)) (Max): 70mA Current - Hold (Ih): 600µA (Typ) Turn On Time: - Voltage - Forward (Vf) (Typ): 1.4V Current - DC Forward (If) (Max): 20mA Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.173", 4.40mm Width) 4 Leads Supplier Device Package: 6-MFSOP, 4 Lead Approvals: UR	pacote: 6-SOIC (0.173", 4.40mm Width) 4 Leads	Estoque3.436
TLP185(GR-TPL,SE	Toshiba Semiconductor and Storage	OPTOISO 3.75KV TRANS 6-SO 4 LEAD Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SMD (4 Leads), Gull Wing Supplier Device Package: 6-SO, 4 Lead	pacote: 6-SMD (4 Leads), Gull Wing	Estoque8.820
TLP5752(D4,E	Toshiba Semiconductor and Storage	OPTOISO 5KV GATE DRVR SO6L Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 15ns, 8ns Current - Output High, Low: 2.5A, 2.5A Current - Peak Output: 2.5A Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Supplier Device Package: 6-SO Approvals: CQC, CSA, cUL, UL, VDE	pacote: 6-SOIC (0.295", 7.50mm Width)	Estoque6.282
74HCT4053D	Toshiba Semiconductor and Storage	X34 PB-F 74HC CMOS LOGIC IC SERI Switch Circuit: - Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 3 On-State Resistance (Max): 110 Ohm Channel-to-Channel Matching (ΔRon): 5 Ohm (Typ) Voltage - Supply, Single (V+): 4.5 V ~ 5.5 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 45ns, 59ns -3db Bandwidth: 200MHz Charge Injection: - Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 100nA Crosstalk: -90dB @ 1MHz Operating Temperature: -40°C ~ 85°C Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	pacote: 16-SOIC (0.154", 3.90mm Width)	Estoque42.108
74HC00D	Toshiba Semiconductor and Storage	IC GATE NAND 4CH 2-INP 14SOP Logic Type: NAND Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 5.2mA, 5.2mA Logic Level - Low: 0.5 V ~ 1.8 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 14-SOP Package / Case: 14-SOIC (0.154", 3.90mm Width)	pacote: 14-SOIC (0.154", 3.90mm Width)	Estoque38.484
RN2102MFV-L3XHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	pacote: -	Estoque20.730
TPCA8007-H-TE12L-Q	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 20A 8-SOPA FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Request a Quote
SSM6N7002BFU-T5L-F	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 0.2A US6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	pacote: -	Request a Quote
TDTC124E-LM	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 49 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 320 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	pacote: -	Estoque9.000
TCTH021BE-LF-CT	Toshiba Semiconductor and Storage	OVER TEMP DETECTION IC IPTCO: 10 Type: Thermal Number of Voltages Monitored: 1 Output: Open Drain or Open Collector Reset: - Reset Timeout: 214µs Typical Voltage - Threshold: 0.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	pacote: -	Estoque23.790
TC74LCX257FT-EL	Toshiba Semiconductor and Storage	IC MULTIPLEXER QUAD 2-CH 16TSSOP Type: Multiplexer Circuit: 4 x 2:1 Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Voltage Supply Source: Single Supply Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP	pacote: -	Request a Quote
TPD1052F-LXHF	Toshiba Semiconductor and Storage	IPD IC PS8 V=18 PD=0.7W F=1MHZ Switch Type: Relay, Solenoid Driver Number of Outputs: 1 Ratio - Input:Output: - Output Configuration: High Side Output Type: P-Channel Interface: Logic Voltage - Load: - Voltage - Supply (Vcc/Vdd): 5V ~ 18V Current - Output (Max): - Rds On (Typ): 500mOhm Input Type: Non-Inverting Features: - Fault Protection: Current Limiting (Fixed), Over Temperature, Short Circuit Operating Temperature: -40°C ~ 125°C Package / Case: 8-SMD, Flat Lead Supplier Device Package: PS-8 (2.9x2.4)	pacote: -	Estoque9.000

TK80S06K3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 80A DPAK-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 40A, 10V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacote: TO-252-3, DPak (2 Leads + Tab), SC-63

Estoque7.856

TK8A50D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 8A TO220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

pacote: TO-220-3 Full Pack

Estoque2.480

TK3P50D,RQ(S

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 3A DPAK-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacote: TO-252-3, DPak (2 Leads + Tab), SC-63

Estoque6.336

2SC2859-Y(TE85L,F)

Toshiba Semiconductor and Storage

TRANS NPN 30V 0.5A S-MINI

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Power - Max: 150mW
Frequency - Transition: 300MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

pacote: TO-236-3, SC-59, SOT-23-3

Estoque3.616

2SC2714-Y(TE85L,F)

Toshiba Semiconductor and Storage

TRANSISTOR NPN S-MINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Gain: 23dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

pacote: TO-236-3, SC-59, SOT-23-3

Estoque100.962

JDH2S01FSTPL3

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 4V 25MA FSC

Diode Type: Schottky - Single
Voltage - Peak Reverse (Max): 4V
Current - Max: 25mA
Capacitance @ Vr, F: 0.6pF @ 0.2V, 1MHz
Resistance @ If, F: -
Power Dissipation (Max): -
Operating Temperature: 125°C (TJ)
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: fSC

pacote: 2-SMD, Flat Lead

Estoque105.012

TCR3DM33,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 3.3V 300MA 4DFN

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.3V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): 65µA ~ 78µA
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-UDFN Exposed Pad
Supplier Device Package: 4-DFN (1x1)

pacote: 4-UDFN Exposed Pad

Estoque5.968

TCR5AM095,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 0.95V 500MA 5DFN

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 0.95V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 500mA
Current - Quiescent (Iq): -
Current - Supply (Max): 55µA ~ 68µA
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XDFN Exposed Pad
Supplier Device Package: 5-DFNB (1.2x1.2)

pacote: 4-XDFN Exposed Pad

Estoque41.472

TC74LCX373FK(EL,K)

Toshiba Semiconductor and Storage

IC OCTAL D-TYPE LATCH 20VSSOP

Logic Type: D-Type Latch
Circuit: 8:8
Output Type: Tri-State
Voltage - Supply: 1.65 V ~ 3.6 V
Independent Circuits: 1
Delay Time - Propagation: 1.5ns
Current - Output High, Low: 24mA, 24mA
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Supplier Device Package: 20-VSSOP

pacote: 20-VFSOP (0.118", 3.00mm Width)

Estoque22.728

TC7SZ02F,LJ(CT

Toshiba Semiconductor and Storage

IC GATE NOR 1CH 2-INP SMV

Logic Type: NOR Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 1.8 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 32mA, 32mA
Logic Level - Low: -
Logic Level - High: -
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: SMV
Package / Case: SC-74A, SOT-753

pacote: SC-74A, SOT-753

Estoque22.356

TC74HC173APF

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 16DIP

Function: Master Reset
Type: D-Type
Output Type: Tri-State, Non-Inverted
Number of Elements: 1
Number of Bits per Element: 4
Clock Frequency: 84MHz
Max Propagation Delay @ V, Max CL: 26ns @ 6V, 150pF
Trigger Type: Positive Edge
Current - Output High, Low: 7.8mA, 7.8mA
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Iq): 4µA
Input Capacitance: 5pF
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)

pacote: 16-DIP (0.300", 7.62mm)

Estoque7.968

TC7W34FK(TE85L)

Toshiba Semiconductor and Storage

IC BUFFER TRIPLE NON-INV US8

Logic Type: Buffer, Non-Inverting
Number of Elements: 3
Number of Bits per Element: 1
Input Type: -
Output Type: -
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Supplier Device Package: 8-SSOP

pacote: 8-VFSOP (0.091", 2.30mm Width)

Estoque4.320

TC7WB67CL8X,LF

Toshiba Semiconductor and Storage

IC USB SWITCH SPST DUAL MP8

Applications: -
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Number of Channels: 2
On-State Resistance (Max): 10 Ohm
Voltage - Supply, Single (V+): 1.65 V ~ 5.5 V
Voltage - Supply, Dual (V±): -
-3db Bandwidth: -
Features: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 8-UFQFN
Supplier Device Package: MP8

pacote: 8-UFQFN

Estoque3.504

TMP95C061BFG(Z)

Toshiba Semiconductor and Storage

IC MCU 16BIT ROMLESS 100QFP

Core Processor: 900/H
Core Size: 16-Bit
Speed: 25MHz
Connectivity: EBI/EMI, SIO, UART/USART
Peripherals: DMA, WDT
Number of I/O: 56
Program Memory Size: -
Program Memory Type: ROMless
EEPROM Size: -
RAM Size: -
Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
Data Converters: A/D 4x10b
Oscillator Type: External
Operating Temperature: -20°C ~ 70°C (TA)
Mounting Type: -
Package / Case: 100-BFQFP
Supplier Device Package: 100-QFP (14x14)

pacote: 100-BFQFP

Estoque3.264

TC32306FTG,EL

Toshiba Semiconductor and Storage

IC RF TXRX ISM<1GHZ 36-VFQFN

Type: TxRx Only
RF Family/Standard: General ISM < 1GHz
Protocol: -
Modulation: ASK, FSK
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Data Rate (Max): -
Power - Output: 10dBm
Sensitivity: -121dBm
Memory Size: -
Serial Interfaces: SPI
GPIO: -
Voltage - Supply: 2 V ~ 3.3 V, 2.4 V ~ 5.5 V
Current - Receiving: 9.2mA ~ 11.1mA
Current - Transmitting: 4.8mA ~ 12mA
Operating Temperature: -40°C ~ 110°C
Package / Case: 36-VFQFN Exposed Pad

pacote: 36-VFQFN Exposed Pad

Estoque17.214

TLP4597G(F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUT 3MA 6-DIP

Circuit: SPST-NC (1 Form B)
Output Type: AC, DC
On-State Resistance (Max): 25 Ohm
Load Current: 150mA
Voltage - Input: 1.15VDC
Voltage - Load: 0 ~ 350 V
Mounting Type: Through Hole
Termination Style: PC Pin
Package / Case: 6-DIP (0.300", 7.62mm)
Supplier Device Package: 6-DIP
Relay Type: Relay

pacote: 6-DIP (0.300", 7.62mm)

Estoque5.634

TLP168J(TPR,U,C,F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 2.5KV TRIAC 6MFSOP

Output Type: Triac
Zero Crossing Circuit: Yes
Number of Channels: 1
Voltage - Isolation: 2500Vrms
Voltage - Off State: 600V
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 3mA
Current - On State (It (RMS)) (Max): 70mA
Current - Hold (Ih): 600µA (Typ)
Turn On Time: -
Voltage - Forward (Vf) (Typ): 1.4V
Current - DC Forward (If) (Max): 20mA
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.173", 4.40mm Width) 4 Leads
Supplier Device Package: 6-MFSOP, 4 Lead
Approvals: UR

pacote: 6-SOIC (0.173", 4.40mm Width) 4 Leads

Estoque3.436

TLP185(GR-TPL,SE

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Current Transfer Ratio (Max): 300% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (4 Leads), Gull Wing
Supplier Device Package: 6-SO, 4 Lead

pacote: 6-SMD (4 Leads), Gull Wing

Estoque8.820

TLP5752(D4,E

Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRVR SO6L

Technology: Optical Coupling
Number of Channels: 1
Voltage - Isolation: 5000Vrms
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Rise / Fall Time (Typ): 15ns, 8ns
Current - Output High, Low: 2.5A, 2.5A
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 15 V ~ 30 V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 6-SO
Approvals: CQC, CSA, cUL, UL, VDE

pacote: 6-SOIC (0.295", 7.50mm Width)

Estoque6.282

74HCT4053D

Toshiba Semiconductor and Storage

X34 PB-F 74HC CMOS LOGIC IC SERI

Switch Circuit: -
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 3
On-State Resistance (Max): 110 Ohm
Channel-to-Channel Matching (ΔRon): 5 Ohm (Typ)
Voltage - Supply, Single (V+): 4.5 V ~ 5.5 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 45ns, 59ns
-3db Bandwidth: 200MHz
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Crosstalk: -90dB @ 1MHz
Operating Temperature: -40°C ~ 85°C
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

pacote: 16-SOIC (0.154", 3.90mm Width)

Estoque42.108

74HC00D

Toshiba Semiconductor and Storage

IC GATE NAND 4CH 2-INP 14SOP

Logic Type: NAND Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 5.2mA, 5.2mA
Logic Level - Low: 0.5 V ~ 1.8 V
Logic Level - High: 1.5 V ~ 4.2 V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 14-SOP
Package / Case: 14-SOIC (0.154", 3.90mm Width)

pacote: 14-SOIC (0.154", 3.90mm Width)

Estoque38.484

RN2102MFV-L3XHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

pacote: -

Estoque20.730

TPCA8007-H-TE12L-Q

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 20A 8-SOPA

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

Request a Quote

SSM6N7002BFU-T5L-F

Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.2A US6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

pacote: -

Request a Quote

TDTC124E-LM

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 49 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 320 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

pacote: -

Estoque9.000

TCTH021BE-LF-CT

Toshiba Semiconductor and Storage

OVER TEMP DETECTION IC IPTCO: 10

Type: Thermal
Number of Voltages Monitored: 1
Output: Open Drain or Open Collector
Reset: -
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

pacote: -

Estoque23.790

TC74LCX257FT-EL

Toshiba Semiconductor and Storage

IC MULTIPLEXER QUAD 2-CH 16TSSOP

Type: Multiplexer
Circuit: 4 x 2:1
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP

pacote: -

Request a Quote

TPD1052F-LXHF

Toshiba Semiconductor and Storage

IPD IC PS8 V=18 PD=0.7W F=1MHZ

Switch Type: Relay, Solenoid Driver
Number of Outputs: 1
Ratio - Input:Output: -
Output Configuration: High Side
Output Type: P-Channel
Interface: Logic
Voltage - Load: -
Voltage - Supply (Vcc/Vdd): 5V ~ 18V
Current - Output (Max): -
Rds On (Typ): 500mOhm
Input Type: Non-Inverting
Features: -
Fault Protection: Current Limiting (Fixed), Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 125°C
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: PS-8 (2.9x2.4)

pacote: -

Estoque9.000