Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.2A
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque54.984 |
|
MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | 17pF @ 10V | ±20V | - | 320mW (Ta) | 3.9 Ohm @ 100mA, 10V | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 15A TO-3PN
|
pacote: TO-3P-3, SC-65-3 |
Estoque23.100 |
|
MOSFET (Metal Oxide) | 600V | 15A (Ta) | 10V | 5V @ 1mA | 17nC @ 10V | 950pF @ 10V | ±30V | - | 170W (Tc) | 300 mOhm @ 7.5A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-220SIS
|
pacote: TO-220-3 Full Pack |
Estoque7.440 |
|
MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 5V @ 1mA | 27nC @ 10V | 1470pF @ 10V | ±30V | - | 45W (Tc) | 190 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-3PN
|
pacote: TO-3P-3, SC-65-3 |
Estoque13.608 |
|
MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 5V @ 1mA | 27nC @ 10V | 1470pF @ 10V | ±30V | - | 190W (Tc) | 190 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 20A 5DFN
|
pacote: 4-VSFN Exposed Pad |
Estoque6.816 |
|
MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | ±30V | Super Junction | 156W (Tc) | 170 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | 5-DFN (8x8) | 4-VSFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO220SIS
|
pacote: TO-220-3 Full Pack, Isolated Tab |
Estoque9.996 |
|
MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | ±30V | - | 45W (Tc) | 155 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque3.984 |
|
MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | ±30V | Super Junction | 130W (Tc) | 190 mOhm @ 7.9A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 12A TO-3PN
|
pacote: TO-3P-3, SC-65-3 |
Estoque13.668 |
|
MOSFET (Metal Oxide) | 600V | 12A (Ta) | 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | ±30V | - | 144W (Tc) | 400 mOhm @ 6A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 150A 8DSOP
|
pacote: 8-PowerWDFN |
Estoque7.360 |
|
MOSFET (Metal Oxide) | 40V | 150A (Tc) | 4.5V, 10V | 2.4V @ 1mA | 103nC @ 10V | 9600pF @ 20V | ±20V | - | 1W (Ta), 170W (Tc) | 0.8 mOhm @ 50A, 10V | 175°C (TJ) | Surface Mount | 8-DSOP Advance | 8-PowerWDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-220
|
pacote: TO-220-3 Full Pack, Isolated Tab |
Estoque6.176 |
|
MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | ±30V | - | 45W (Tc) | 175 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13A TO-220SIS
|
pacote: TO-220-3 Full Pack |
Estoque14.328 |
|
MOSFET (Metal Oxide) | 650V | 13A (Ta) | 10V | 5V @ 1mA | 17nC @ 10V | 950pF @ 10V | ±30V | - | 40W (Tc) | 380 mOhm @ 6.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A TO-220SIS
|
pacote: TO-220-3 Full Pack |
Estoque8.520 |
|
MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | ±30V | Super Junction | 40W (Tc) | 190 mOhm @ 7.9A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 150A 8DSOP
|
pacote: 8-PowerWDFN |
Estoque5.424 |
|
MOSFET (Metal Oxide) | 30V | 150A (Tc) | 4.5V, 10V | 2.3V @ 1mA | 74nC @ 10V | 6900pF @ 15V | ±20V | - | 800mW (Ta), 142W (Tc) | 0.85 mOhm @ 50A, 10V | 150°C (TJ) | Surface Mount | 8-DSOP Advance | 8-PowerWDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A 5DFN
|
pacote: 4-VSFN Exposed Pad |
Estoque20.664 |
|
MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | ±30V | - | 156W (Tc) | 190 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | 5-DFN (8x8) | 4-VSFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 100V 60A SOP ADV
|
pacote: 8-PowerVDFN |
Estoque7.984 |
|
MOSFET (Metal Oxide) | 100V | 60A (Tc) | 10V | 4V @ 1mA | 58nC @ 10V | 5200pF @ 50V | ±20V | - | 1.6W (Ta), 78W (Tc) | 4.5 mOhm @ 30A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 80V 60A SOP ADV
|
pacote: 8-PowerVDFN |
Estoque6.048 |
|
MOSFET (Metal Oxide) | 80V | 60A (Tc) | 10V | 4V @ 1mA | 59nC @ 10V | 5300pF @ 40V | ±20V | - | 1.6W (Ta), 78W (Tc) | 4 mOhm @ 30A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 60V 60A SOP ADV
|
pacote: 8-PowerVDFN |
Estoque46.728 |
|
MOSFET (Metal Oxide) | 60V | 60A (Tc) | 6.5V, 10V | 4V @ 1mA | 72nC @ 10V | 6100pF @ 30V | ±20V | - | 1.6W (Ta), 78W (Tc) | 2.3 mOhm @ 30A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 17.3A TO-220AB
|
pacote: TO-220-3 |
Estoque8.172 |
|
MOSFET (Metal Oxide) | 650V | 17.3A (Ta) | 10V | 3.5V @ 900µA | 45nC @ 10V | 1800pF @ 300V | ±30V | - | 165W (Tc) | 200 mOhm @ 8.7A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
pacote: 8-PowerWDFN |
Estoque7.712 |
|
MOSFET (Metal Oxide) | 45V | 300A (Tc) | 4.5V, 10V | 2.4V @ 1mA | 122nC @ 10V | 9600pF @ 22.5V | ±20V | - | 960mW (Ta), 170W (Tc) | - | 175°C | Surface Mount | 8-DSOP Advance | 8-PowerWDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 26A SOP8
|
pacote: 8-PowerVDFN |
Estoque4.352 |
|
MOSFET (Metal Oxide) | 250V | 26A (Tc) | 10V | 4V @ 1mA | 22nC @ 10V | 2200pF @ 100V | ±20V | - | 78W (Tc) | 52 mOhm @ 13A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A DPAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque14.070 |
|
MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | ±30V | - | 130W (Tc) | 300 mOhm @ 6.9A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque14.532 |
|
MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | ±30V | - | 130W (Tc) | 250 mOhm @ 6.9A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 45V 150A
|
pacote: 8-PowerVDFN |
Estoque6.512 |
|
MOSFET (Metal Oxide) | 45V | 150A (Tc) | 4.5V, 10V | 2.4V @ 1mA | 99nC @ 10V | 9600pF @ 22.5V | ±20V | - | 960mW (Ta), 170W (Tc) | 1.04 mOhm @ 50A, 10V | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 150A 8SOP
|
pacote: 8-PowerVDFN |
Estoque3.568 |
|
MOSFET (Metal Oxide) | 30V | 150A (Tc) | 4.5V, 10V | 2.1V @ 1mA | 110nC @ 10V | 10000pF @ 15V | ±20V | - | 960mW (Ta), 170W (Tc) | 0.65 mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 3A TO-220SIS
|
pacote: TO-220-3 Full Pack |
Estoque19.980 |
|
MOSFET (Metal Oxide) | 900V | 3A (Ta) | 10V | 4V @ 1mA | 17nC @ 10V | 700pF @ 25V | ±30V | - | 40W (Tc) | 4.3 Ohm @ 1.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 5.4A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque2.000 |
|
MOSFET (Metal Oxide) | 600V | 5.4A (Ta) | 10V | 3.7V @ 270µA | 10.5nC @ 10V | 380pF @ 300V | ±30V | Super Junction | 60W (Tc) | 900 mOhm @ 2.7A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 92A 8DSOP
|
pacote: 8-PowerWDFN |
Estoque7.344 |
|
MOSFET (Metal Oxide) | 100V | 92A (Tc) | 10V | 4V @ 1mA | 58nC @ 10V | 5200pF @ 50V | ±20V | - | 800mW (Ta), 142W (Tc) | 4.5 mOhm @ 46A, 10V | 150°C (TJ) | Surface Mount | 8-DSOP Advance | 8-PowerWDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 5.6A 8TSON
|
pacote: 8-PowerVDFN |
Estoque4.816 |
|
MOSFET (Metal Oxide) | 250V | 5.6A (Ta) | 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | ±20V | - | 700mW (Ta), 39W (Tc) | 198 mOhm @ 2.8A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 200V 21A 8-SOP
|
pacote: 8-PowerVDFN |
Estoque4.912 |
|
MOSFET (Metal Oxide) | 200V | 13A (Ta) | 10V | 4V @ 300µA | 11.2nC @ 10V | 1100pF @ 100V | ±20V | - | 1.6W (Ta), 57W (Tc) | 64 mOhm @ 6.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 15A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque6.864 |
|
MOSFET (Metal Oxide) | 40V | 15A (Ta) | 4.5V, 10V | 2.5V @ 100µA | 10nC @ 10V | 610pF @ 10V | ±20V | - | 46W (Tc) | 17.8 mOhm @ 7.5A, 10V | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |